首页 |元器件品牌

PESD5V0L1BA,135 [NXP]

PESDxL1BA series - Low capacitance bidirectional ESD protection diodes in SOD323 SOD 2-Pin;
PESD5V0L1BA,135
型号： PESD5V0L1BA,135
厂家： NXP    NXP
描述：

PESDxL1BA series - Low capacitance bidirectional ESD protection diodes in SOD323 SOD 2-Pin

局域网 PC 光电二极管 电视
文件： 总15页 (文件大小：174K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PESDxL1BA series  
Low capacitance bidirectional ESD protection diodes in  
SOD323  
Rev. 02 — 20 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323  
(SC-76) SMD plastic package designed to protect one signal line from the damage  
caused by ESD and other transients.  
1.2 Features  
I Bidirectional ESD protection of one line I ESD protection > 23 kV  
I Max. peak pulse power: Ppp = 500 W  
I Low clamping voltage: V(CL)R = 26 V  
I IEC 61000-4-2, level 4 (ESD)  
I IEC 61000-4-5 (surge); Ipp = 18 A  
I Ultra low leakage current: IRM < 0.09 µA I Very small SMD plastic package  
1.3 Applications  
I Computers and peripherals  
I Data lines  
I Communication systems  
I Audio and video equipment  
I CAN bus protection  
1.4 Quick reference data  
Table 1.  
Symbol  
VRWM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse stand-off voltage  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
diode capacitance  
-
-
-
-
-
-
-
-
-
-
3.3  
5.0  
12  
15  
24  
V
V
V
V
V
Cd  
VR = 0 V;  
f = 1 MHz  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
-
-
-
-
-
101  
75  
19  
16  
11  
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
 
 
 
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode 1  
cathode 2  
Simplified outline  
Symbol  
1
2
2
1
2
sym045  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PESDxL1BA series SC-76  
plastic surface mounted package; 2 leads  
SOD323  
4. Marking  
Table 4.  
Marking codes  
Type number  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
Marking code  
AB  
AC  
AD  
AE  
AF  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
2 of 15  
 
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
[1]  
Ppp  
peak pulse power  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
peak pulse current  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
junction temperature  
ambient temperature  
storage temperature  
8/20 µs  
-
-
-
-
-
500  
500  
200  
200  
200  
W
W
W
W
W
[1]  
Ipp  
8/20 µs  
-
18  
A
-
15  
A
-
5
A
-
5
A
-
3
A
Tj  
-
150  
+150  
+150  
°C  
°C  
°C  
Tamb  
Tstg  
−65  
−65  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.  
Table 6.  
Symbol  
ESD  
ESD maximum ratings  
Parameter  
Conditions  
Min  
Max  
Unit  
[1]  
electrostatic discharge capability IEC 61000-4-2  
(contact discharge)  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
-
-
-
-
-
-
30  
30  
30  
30  
23  
10  
kV  
kV  
kV  
kV  
kV  
kV  
PESDxL1BA series  
HBM MIL-Std 883  
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.  
Table 7.  
ESD standards compliance  
Standard  
Conditions  
IEC 61000-4-2; level 4 (ESD); Figure 2  
HBM MIL-Std 883; class 3  
> 15 kV (air); > 8 kV (contact)  
> 4 kV  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
3 of 15  
 
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
001aaa631  
I
PP  
001aaa630  
120  
100 %  
90 %  
100 % I ; 8 µs  
PP  
I
PP  
(%)  
80  
−t  
e
50 % I ; 20 µs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (µs)  
Fig 1. 8/20 µs pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
4 of 15  
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
6. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse stand-off voltage  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
reverse leakage current  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
breakdown voltage  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
diode capacitance  
-
-
-
-
-
-
-
-
-
-
3.3  
5.0  
12  
15  
24  
V
V
V
V
V
IRM  
see Figure 7  
VRWM = 3.3 V  
VRWM = 5.0 V  
VRWM = 12 V  
VRWM = 15 V  
VRWM = 24 V  
IR = 5 mA  
-
-
-
-
-
0.09  
0.01  
< 1  
2
µA  
µA  
nA  
nA  
nA  
1
50  
50  
50  
< 1  
< 1  
V(BR)  
5.8  
6.4  
6.9  
V
V
V
V
V
7.0  
7.6  
8.2  
14.2  
17.1  
25.4  
15.9  
18.9  
27.8  
16.7  
20.3  
30.3  
Cd  
VR = 0 V; f = 1 MHz;  
see Figure 5 and 6  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
clamping voltage  
PESD3V3L1BA  
-
-
-
-
-
101  
75  
19  
16  
11  
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
[1]  
V(CL)R  
Ipp = 1 A  
Ipp = 18 A  
Ipp = 1 A  
Ipp = 15 A  
Ipp = 1 A  
Ipp = 5A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
V
V
V
V
V
V
V
V
V
V
26  
10  
33  
20  
37  
25  
44  
40  
70  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
Ipp = 1 A  
Ipp = 5 A  
Ipp = 1 A  
Ipp = 3 A  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
5 of 15  
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
Table 8.  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
rdif  
differential resistance  
PESD3V3L1BA  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
IR = 1 mA  
-
-
-
-
-
-
-
-
-
-
400  
80  
Ω
Ω
Ω
Ω
Ω
200  
225  
300  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
6 of 15  
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
006aaa066  
001aaa193  
4
10  
1.2  
P
PP  
P
PP  
(W)  
P
PP(25°C)  
3
10  
0.8  
(1)  
(2)  
2
10  
0.4  
10  
0
2
3
4
1
10  
10  
10  
10  
0
50  
100  
150  
200  
t
(µs)  
T (°C)  
j
p
Tamb = 25 °C  
tp = 8/20 µs exponential decay waveform; see Figure 1  
(1) PESD3V3L1BA and PESD5V0L1BA  
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA  
Fig 3. Peak pulse power dissipation as a function of  
pulse time; typical values  
Fig 4. Relative variation of peak pulse power as a  
function of junction temperature; typical  
values  
006aaa067  
006aaa068  
110  
20  
C
d
C
d
(pF)  
100  
(pF)  
16  
90  
80  
70  
60  
50  
(1)  
12  
8
(1)  
(2)  
(3)  
(2)  
4
0
0
1
2
3
4
5
0
5
10  
15  
20  
25  
V
(V)  
V
(V)  
R
R
Tamb = 25 °C; f = 1 MHz  
Tamb = 25 °C; f = 1 MHz  
(1) PESD3V3L1BA  
(2) PESD5V0L1BA  
(1) PESD12VL1BA  
(2) PESD15VL1BA  
(3) PESD24VL1BA  
Fig 5. Diode capacitance as a function of reverse  
voltage; typical values  
Fig 6. Diode capacitance as a function of reverse  
voltage; typical values  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
7 of 15  
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
006aaa069  
(1)  
10  
I
RM  
I
RM(25°C)  
1
−1  
10  
−100  
−50  
0
50  
100  
150  
T (°C)  
j
(1) PESD3V3L1BA; PESD5V0L1BA  
For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C  
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
8 of 15  
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
ESD TESTER  
4 GHz DIGITAL  
OSCILLOSCOPE  
RG 223/U  
50 Ω coax  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
50 Ω  
Z
1
2
DUT: PESDxL1BA  
IEC 61000-4-2 network  
= 150 pF; R = 330 Ω  
C
Z
Z
vertical scale = 20 V/div; horizontal scale = 50 ns/div  
PESD24VL1BA  
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
GND  
GND  
GND  
GND  
GND  
PESD15VL1BA  
PESD12VL1BA  
PESD5V0L1BA  
PESD3V3L1BA  
GND  
unclamped +1 kV ESD voltage waveform  
clamped +1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
(IEC 61000-4-2 network)  
vertical scale = 20 V/div; horizontal scale = 50 ns/div  
PESD3V3L1BA  
GND  
GND  
GND  
GND  
GND  
GND  
PESD5V0L1BA  
PESD12VL1BA  
PESD15VL1BA  
PESD24VL1BA  
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
unclamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
clamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
006aaa070  
Fig 8. ESD clamping test setup and waveforms  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
9 of 15  
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
7. Application information  
The PESDxL1BA series is designed for bidirectional protection of one signal line from the  
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA  
series may be used on lines where the signal polarity is above and below ground. The  
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs  
waveform.  
line to be protected  
PESDxL1BA  
006aaa071  
ground  
Fig 9. Typical application: Bidirectional protection of one signal line  
Circuit board layout and protection device placement  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the protection device as close to the input terminal or connector as possible.  
2. The path length between the protection device and the protected line should be  
minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductor.  
5. Minimize all printed-circuit board conductive loops including power and ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer printed-circuit  
boards, use ground vias.  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
10 of 15  
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
8. Package outline  
Plastic surface-mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
03-12-17  
06-03-16  
SOD323  
SC-76  
Fig 10. Package outline SOD323 (SC-76)  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
11 of 15  
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
PESDxL1BA series  
SOD323  
4 mm pitch, 8 mm tape and reel  
-115  
-135  
[1] For further information and the availability of packing methods, see Section 12.  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
12 of 15  
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
10. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20090820  
Data sheet status  
Change notice  
Supersedes  
PESDXL1BA_SER_2  
Modifications:  
Product data sheet  
-
PESDXL1BA_SER_1  
• This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
• Figure 10 “Package outline SOD323 (SC-76)”: updated  
PESDXL1BA_SER_1  
20041004  
Product data sheet  
-
-
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
13 of 15  
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PESDXL1BA_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 20 August 2009  
14 of 15  
 
 
 
 
 
 
PESDxL1BA series  
NXP Semiconductors  
Low capacitance bidirectional ESD protection diodes in SOD323  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Application information. . . . . . . . . . . . . . . . . . 10  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Packing information. . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 20 August 2009  
Document identifier: PESDXL1BA_SER_2  
 

相关型号：

PESD5V0L1BA-Q

 Low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1BSF

 Ultra low profile bidirectional low capacitance
NXP

PESD5V0L1BSF

 Ultra low profile bidirectional low capacitance ESD protection diodeProduction
NEXPERIA

PESD5V0L1BSF-315

 DIODE 35 W, BIDIRECTIONAL, SILICON, TVS DIODE, 0.60 X 0.30 MM, 0.30 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, ULTRA SMALL PACKAGE-2, Transient Suppressor
NXP

PESD5V0L1BSL

 ESD protection deviceProduction
NEXPERIA

PESD5V0L1UA

 Low capacitance unidirectional ESD protection diodes
NXP

PESD5V0L1UA

 Low capacitance unidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1UA,115

 PESD5V0L1UA; PESD5V0L1UB; PESD5V0L1UL - Low capacitance unidirectional ESD protection diodes SOD 2-Pin
NXP

PESD5V0L1UA-Q

 Low capacitance unidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1UB

 Low capacitance unidirectional ESD protection diodes
NXP

PESD5V0L1UB

 Low capacitance unidirectional ESD protection diodesProduction
NEXPERIA

PESD5V0L1UB,115

 PESD5V0L1UA; PESD5V0L1UB; PESD5V0L1UL - Low capacitance unidirectional ESD protection diodes SOD 2-Pin
NXP
©2020 ICPDF网 联系我们和版权申明