PESD5V0L5UY [NXP]
Low capacitance 5-fold ESD protection diode arrays in SOT363 package; 在SOT363封装的低电容5倍的ESD保护二极管阵列
| 型号： | PESD5V0L5UY |
| 厂家： | 
NXP |
| 描述： | Low capacitance 5-fold ESD protection diode arrays in SOT363 package |
| 文件： | 总11页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PESD3V3L5UY; PESD5V0L5UY
Low capacitance 5-fold ESD
protection diode arrays in SOT363
package
Product specification
2004 Mar 23
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
FEATURES
QUICK REFERENCE DATA
• Uni-directional ESD protection of up to five lines
• Bi-directional ESD protection of up to four lines
• Low diode capacitance
SYMBOL
PARAMETER
VALUE UNIT
VRWM
reverse standoff voltage
PESD3V3L5UY
3.3
5
V
V
• Maximum peak pulse power: Ppp = 25 W at tp = 8/20 µs
• Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A
• Ultra low leakage current: IRM = 8 nA at VRWM = 5 V
• ESD protection > 20 kV
PESD5V0L5UY
Cd
diode capacitance
PESD3V3L5UY
22
16
pF
pF
PESD5V0L5UY
number of protected lines 5
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
cathode 1
• Cellular handsets and accessories
• Portable electronics
2
common anode
cathode 2
• Computers and peripherals
• Communications systems
• Audio and video equipment.
3
4
cathode 3
5
cathode 4
6
cathode 5
DESCRIPTION
Low capacitance 5-fold ESD protection array in the very
small SOT363 plastic package designed to protect up to
five transmission or data lines from the damage caused by
Electrostatic Discharge (ESD).
6
5
4
1
3
4
5
6
2
MARKING
TYPE NUMBER
PESD3V3L5UY
MARKING CODE(1)
*K3
*K4
PESD5V0L5UY
1
2
3
sym011
001aaa212
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT363) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PESD3V3L5UY
PESD5V0L5UY
−
−
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SOT363
SOT363
2004 Mar 23
2
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ppp
Ipp
peak pulse power
8/20 µs pulse; notes 1 and 2
8/20 µs pulse; notes 1 and 2
−
−
−
25
W
A
peak pulse current
2.5
Tj
junction temperature
operating ambient temperature
storage temperature
150
°C
°C
°C
Tamb
Tstg
−65
−65
+150
+150
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD maximum ratings
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per diode
ESD
electrostatic discharge capability
IEC 61000-4-2 (contact discharge);
notes 1 and 2
20
10
kV
kV
HBM MIL-Std 883
Notes
1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD standards compliance
ESD STANDARD
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
CONDITIONS
> 15 kV (air); > 8 kV (contact)
> 4 kV
2004 Mar 23
3
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
001aaa191
MLE218
I
pp
120
handbook, halfpage
100 %
90 %
I
pp
100 % I ; 8 µs
pp
(%)
80
−t
e
50 % I ; 20 µs
pp
40
10 %
t
0
t = 0.7 to 1 ns
r
0
10
20
30
40
30 ns
t (µs)
60 ns
Fig.2 8/20 µs pulse waveform according to
Fig.3 Electrostatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
IEC 61000-4-5.
2004 Mar 23
4
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VRWM
reverse stand-off voltage
PESD3V3L5UY
−
−
−
−
3.3
V
V
PESD5V0L5UY
5
IRM
reverse leakage current
PESD3V3L5UY
VRWM = 3.3 V
−
−
75
5
300
25
nA
nA
PESD5V0L5UY
VRWM = 5 V
IZ = 1 mA
VBR
breakdown voltage
PESD3V3L5UY
5.3
6.4
5.6
6.8
5.9
7.2
V
V
PESD5V0L5UY
Cd
diode capacitance
PESD3V3L5UY
f = 1 MHz; VR = 0 V;
see Fig.5
−
−
22
16
28
19
pF
pF
PESD5V0L5UY
VCL(R)
clamping voltage
PESD3V3L5UY
notes 1 and 2
Ipp = 1 A
−
−
−
−
−
−
−
−
10
12
10
12
V
V
V
V
Ipp = 2.5 A
Ipp = 1 A
PESD5V0L5UY
Ipp = 2.5 A
IR = 1 mA
rdiff
differential resistance
PESD3V3L5UY
−
−
−
−
200
100
Ω
Ω
PESD5V0L5UY
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
2004 Mar 23
5
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
GRAPHICAL DATA
001aaa208
001aaa209
2
10
P
pp(T )
j
P
pp(T =25°C)
j
1.0
0.8
0.6
0.4
0.2
P
pp
(W)
10
1
0
0
2
3
4
1
10
10
10
10
50
100
150
t
(µs)
T (°C)
j
p
Tamb = 25 °C.
Ipp = 8/20 µs exponentially decaying waveform; see Fig.2.
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
001aaa210
001aaa211
25
10
C
d
I
(pF)
20
R(T )
j
I
R(T =25°C)
j
15
10
5
(1)
(2)
1
−1
0
10
0
1
2
3
4
5
−75
−25
25
75
125
175
T (°C)
V
R
(V)
j
(1) PESD3V3L5UY.
(2) PESD5V0L5UY.
f = 1 MHz; Tamb = 25 °C.
Fig.7 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2004 Mar 23
6
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
note 1
D.U.T.: PESDxL5UY
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
Note 1: Attenuator is only used for open
socket high voltage measurements
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L5UY
GND1
GND
PESD3V3L5UY
GND2
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa218
Fig.8 ESD clamping test set-up and waveforms.
7
2004 Mar 23
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
APPLICATION INFORMATION
The PESDxL5UY is designed for the uni-directional protection of up to five lines or bi-directional protection of four lines
from the damage caused by Electrostatic Discharge (ESD) and surge pulses. The PESDxL5UY may be used on lines
where the signal polarities are above or below ground. PESDxL5UY can withstand and provides protection from a surge
of 25 watts peak pulse power per line for a 8/20 µs waveform.
high speed data lines
high speed data lines
PESDxL5UY
PESDxL5UY
GND
GND
001aaa216
001aaa214
Fig.9 Typical application for uni-directional
protection of five lines.
Fig.10 Typical application for bi-directional
protection of four lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD,
Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
1. The protection device should be placed as closely as
possible to the input terminal or connector.
2. The path length between the protection device and the
protected line should be as short as possible.
3. Parallel signal paths should be kept to a minimum.
4. Running protection conductors in parallel with
unprotected conductor should be avoided.
5. All printed-circuit board conductive loops (including
power and group loops) should be kept to a minimum.
6. The length of the transient return path to ground
should be kept to a minimum.
7. The use of shared transient return paths to a common
ground point should be avoided.
8. Ground planes should be used whenever possible.
9. For multilayer printed-circuit boards, ground vias
should be used.
2004 Mar 23
8
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2004 Mar 23
9
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 23
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp11
Date of release: 2004 Mar 23
Document order number: 9397 750 12255
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