PHP1035 [NXP]
P-channel enhancement mode MOS transistor; P沟道增强型MOS晶体管
| 型号： | PHP1035 |
| 厂家： | 
NXP |
| 描述： | P-channel enhancement mode MOS transistor |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PHP1035
P-channel enhancement mode
MOS transistor
Preliminary specification
1998 Feb 18
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
FEATURES
PINNING - SOT96-1 (SO8)
• Very low RDSon
PIN
SYMBOL
DESCRIPTION
• High-speed switching
1
2
3
4
5
6
7
8
s
s
s
g
d
d
d
d
source
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
source
source
gate
APPLICATIONS
drain
drain
drain
drain
• Power management
• DC-DC converters
• General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
SOT96-1 (SO8) SMD plastic package.
d
handbook, halfpage
8
5
4
g
CAUTION
1
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
s
MAM398
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−30
UNIT
VDS
VSD
VGSO
VGSth
ID
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
−
−
−
V
V
V
V
A
IS = −1.25 A; VGD = 0
open drain
−1.3
±20
−
ID = −1 mA; VDS = VGS
Ts = 80 °C
−1
−
−8
35
4
RDSon
Ptot
drain-source on-state resistance
total power dissipation
ID = −4 A; VGS = −10 V
Ts = 80 °C
−
mΩ
−
W
1998 Feb 18
2
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage (DC)
CONDITIONS
MIN.
MAX.
−30
UNIT
VDS
VGSO
ID
−
−
−
−
−
−
−
V
V
A
A
gate-source voltage (DC)
drain current (DC)
open drain
±20
−8
Ts = 80 °C; note 1
note 2
IDM
Ptot
peak drain current
−32
4
total power dissipation
Ts = 80 °C
W
W
W
°C
°C
T
amb = 25 °C; note 3
amb = 25 °C; note 4
2.78
1.16
+150
+150
T
Tstg
Tj
storage temperature
−55
−55
operating junction temperature
Source-drain diode
IS
source current (DC)
peak pulsed source current
Ts = 80 °C
−
−
−3
A
A
ISM
note 2
−12
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
17.5
UNIT
thermal resistance from junction to soldering point
K/W
1998 Feb 18
3
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−30
TYP.
MAX. UNIT
V(BR)DSS drain-source breakdown voltage
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −24 V
VGS = ±20 V; VDS = 0
VGS = −4.5 V; ID = 2 A
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
gate leakage current
−1
−
−
−
V
−
−100
±100
50
35
−
nA
nA
mΩ
mΩ
pF
pF
pF
pC
IGSS
−
−
RDSon
drain-source on-state resistance
−
−
V
GS = −10 V; ID = −4 A
−
−
Ciss
Coss
Crss
QG
input capacitance
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
−
tbf
tbf
tbf
tbf
output capacitance
reverse transfer capacitance
total gate charge
−
−
−
−
VGS = −10 V; VDD = −15 V;
ID = −4 A; Tamb = 25 °C
−
−
QGS
QGD
gate-source charge
gate-drain charge
VDD = −15 V; ID = −4 A;
Tamb = 25 °C
−
−
tbf
tbf
−
−
pC
nC
VDD = −15 V; ID = −4 A;
Tamb = 25 °C
Switching times
td(on) turn-on delay time
tf
VGS = 0 to −10 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
−
−
−
−
−
−
tbf
tbf
tbf
tbf
tbf
tbf
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
fall time
ton
turn-on switching time
turn-off delay time
rise time
td(off)
tr
VGS = −10 to 0 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
toff
turn-off switching time
Source-drain diode
VSD
trr
source-drain forward voltage
reverse recovery time
VGD = 0; IS = −1.25 A
−
−
−
−1.3
V
IS = −1.25 A; di/dt = 100 A/µs
tbf
−
ns
1998 Feb 18
4
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1998 Feb 18
5
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 18
6
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
NOTES
1998 Feb 18
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135108/00/01/pp8
Date of release: 1998 Feb 18
Document order number: 9397 750 03221
相关型号：
PHP1035112
TRANSISTOR 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpose Small Signal
NXP
PHP1035118
TRANSISTOR 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpose Small Signal
NXP
PHP109/T3
TRANSISTOR 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
NXP
PHP109T/R
TRANSISTOR 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FET General Purpose Power
NXP
PHP10N10E127
TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
PHP10N40E127
TRANSISTOR 10.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明