PHX18NQ20T [NXP]
N-channel enhancement mode field-effect transistor; N沟道增强模式音响场效晶体管![PHX18NQ20T](http://pdffile.icpdf.com/pdf1/p00042/img/icpdf/PHX18NQ20T_221549_icpdf.jpg)
型号: | PHX18NQ20T |
厂家: | ![]() |
描述: | N-channel enhancement mode field-effect transistor |
文件: | 总15页 (文件大小:274K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
Product specification
M3D308
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHX18NQ20T in SOT186A.
2. Features
■ TrenchMOS™ technology
■ Low on-state resistance
■ Fast switching
■ Low thermal resistance
■ Isolated tab.
3. Applications
■ Off-line switched mode power supplies
■ Television and computer monitor power supplies
■ DC to DC converters
c
c
■ Motor control circuits
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
isolated tab
d
2
drain (d)
3
source (s)
isolated
g
Tab
03ab49
03ab30
1 2 3
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
PHX18NQ20T
Philips Semiconductors
N-channel FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
200
8.2
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C
Ths = 25 °C; VGS = 10 V
Ths = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
30
W
−
150
180
450
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 8 A; Tj = 25 oC
130
−
VGS = 10 V; ID = 8 A; Tj = 150 °C
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
200
200
±20
8.2
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
V
−
V
Ths = 25 °C; VGS = 10 V;
−
A
Figure 2 and 3
T
hs = 100 °C; VGS = 10 V; Figure 2
−
−
5.2
33
A
A
IDM
peak drain current
Ths = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Ths = 25 °C; Figure 1
−
30
W
−55
−55
+150
+150
°C
°C
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC)
peak source (diode forward) current
Tamb = 25 °C
−
−
8.2
33
A
A
ISM
Tamb = 25 °C; pulsed; tp ≤ 10 µs
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
2 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03aa11
03aa19
120
120
100
80
60
40
20
0
100
I
P
der
(%)
der
(%)
80
60
40
20
0
0
25
50
75
100
125
150
o
175
0
25
50
75
100 125 150 175
o
( C)
amb
T
( C)
T
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ac74
2
10
R
= V
DS
/ I
DSon
D
I
D
t
= 10µs
p
(A)
10
100µs
1 ms
t
p
P
δ
=
T
1
10 ms
D.C.
100 ms
t
t
p
T
-1
10
3
10
(V)
2
10
V
1
10
DS
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
3 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Rth(j-hs)
Rth(j-a)
Parameter
Conditions
Value
4.17
55
Unit
K/W
K/W
thermal resistance from junction to heatsink
thermal resistance from junction to ambient
vertical in still air;
lead length ≤ 5 mm; Figure 4
7.1 Transient thermal impedance
03ac73
10
Z
th(j-a)
δ = 0.5
(K/W)
0.2
1
0.1
0.05
-1
10
0.02
t
p
P
δ
=
T
single pulse
-2
10
t
t
p
T
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
4 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
200
178
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
2
3
−
−
4
−
6
V
V
V
Tj = 150 °C
Tj = −55 °C
1.2
−
IDSS
drain-source leakage current VDS = 200 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
−
−
−
0.05
−
10
µA
µA
nA
100
100
IGSS
gate-source leakage current VGS = ±10 V; VDS = 0 V
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 8 A;
Figure 7 and 8
Tj = 25 °C
−
−
130
180
450
mΩ
mΩ
Tj = 150 °C
−
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; I = 8 A;
Figure 11
−
15
−
S
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
ton
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
1850
170
91
40
9
−
_
_
−
−
−
_
_
pF
pF
pF
nC
nC
nC
ns
ID = 18 A; VDD = 160 V;
VGS = 10 V; Figure 14
gate-source charge
gate-drain (Miller) charge
turn-on time
22
3
VDD = 100 V; RD = 5.6 Ω;
VGS = 10 V; RG = 5.6 Ω;
Resistive load
toff
turn-off time
92
ns
Source-drain diode
VSD
source-drain (diode forward) IS = 16 A; VGS = 0 V;
−
0.9
1.2
V
voltage
Figure 13
trr
reverse recovery time
recovered charge
IS = 16 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
−
−
130
0.8
−
−
ns
Qr
µC
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
5 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03ac75
03ac82
20
20
18
16
14
12
10
8
V
= 10V
GS
6 V
o
18
16
14
12
10
8
T = 25
C
I
j
D
I
8 V
V
> I X R
D
D
DS
DSon
(A)
(A)
5.5 V
o
150
C
5 V
6
6
4
4
4.5 V
2
2
o
Tj = 25
5
C
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
(V)
2
0
1
2
3
4
6
V
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa31
03ac80
3
a
2.8
2.6
2.4
2.2
2
Ω
4.5 V
5 V
o
T = 25
C
j
1.8
1.6
1.4
1.2
1
5.5 V
6 V
= 10 V
0.8
0.6
0.4
0.2
0
V
GS
-60
-20
20
60
100
140
180
o
T ( C)
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
6 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03aa32
03aa35
5
-1
-2
-3
-4
-5
-6
10
10
10
10
10
10
4.5
I
D
V
GS(th)
(A)
4
(V)
max.
3.5
3
typ.
min
2.5
2
min
typ
max
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ac76
25
03ac78
4
10
o
V
> I X R
D DSon
T = 25
C
DS
C
, C
(pF)
,
j
iss oss
g
C
fs 20
(S)
rss
C
iss
3
10
15
10
5
o
150
C
C
oss
2
10
C
rss
0
10
0
2
4
6
8
10 12 14 16 18 20
(A)
-1
10
2
10
1
10
I
V
(V)
DS
D
Tj = 25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
7 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03ac77
03ac79
20
15
14
13
12
11
10
9
V
= 0 V
18
16
14
12
10
8
GS
V
I
= 18 A
D
GS
(V)
I
S
o
T = 25
C
V
= 40V
j
DD
(A)
o
150
C
V
= 160V
DD
8
7
6
5
6
o
T = 25
C
4
j
4
3
2
2
1
0
0
0
0.2
0.4
0.8
1
0.6
1.2
0
5
10 15 20 25 30 35 40 45 50 55 60
(nC)
V
(V)
Q
SD
G
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9. Isolation characteristics
Table 6: Isolation characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Visol
RMS isolation voltage
f = 50-60 Hz; sinusoidal
−
−
2500
V
from all three terminals waveform; RH ≤ 65%; clean
to external heatsink.
and dust-free.
Cisol
Capacitance from pin 2
(drain) to external
heatsink.
−
10
−
pF
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
8 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
10. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.2
2.7
2.3
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are 2.5 × 0.8 max. depth
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
99-09-13
SOT186A
3-lead TO-220F
Fig 15. SOT186A.
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
9 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
11. Revision history
Table 7: Revision history
Rev Date
CPCN
-
Description
01 20000828
Product specification.
9397 750 07452
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Product specification
Rev. 01 — 28 August 2000
10 of 15
PHX18NQ20T
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N-channel FET
12. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
13. Definitions
14. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07452
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 28 August 2000
11 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
12 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
13 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
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The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07452
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 28 August 2000
14 of 15
PHX18NQ20T
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N-channel FET
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 August 2000
Document order number: 9397 750 07452
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PHX27NQ11T
TRANSISTOR 20.8 A, 110 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220F, FULL PACK-3, FET General Purpose Power
NXP
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