PMEG2010BELD [NXP]
20 V, 1 A low VF MEGA Schottky barrier rectifier; 20 V ，1 A的低VF MEGA肖特基势垒整流器
| 型号： | PMEG2010BELD |
| 厂家： | 
NXP |
| 描述： | 20 V, 1 A low VF MEGA Schottky barrier rectifier |
| 文件： | 总14页 (文件大小：956K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEG2010BELD
SOD882D
20 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 18 April 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a leadless ultra small
DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 20 V
Low forward voltage VF ≤ 490 mV
AEC-Q101 qualified
Ultra small and leadless SMD plastic
package
Solderable side pads
Package height typ. 0.37 mm
1.3 Applications
Low voltage rectification
Low power consumption applications
Ultra high-speed switching
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
LED backlight for mobile application
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
[1]
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
square wave
-
-
1
A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C;
-
-
1
A
square wave
VR
VF
reverse voltage
forward voltage
Tj = 25 °C
-
-
-
20
V
IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;
428
490
mV
Tj = 25 °C
IR
trr
reverse current
VR = 10 V; Tj = 25 °C
-
-
28
50
-
µA
ns
reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
1.6
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
K
A
cathode[1]
1
2
2
anode
1
2
sym001
Transparent
top view
DFN1006D-2
(SOD882D)
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMEG2010BELD
4. Marking
DFN1006D-2 Leadless ultra small plastic package; 2 terminals
SOD882D
Table 4.
Marking codes
Type number
PMEG2010BELD
Marking code
0000 1001
CATHODE BAR
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac927
Fig 1. DFN1006D-2 (SOD882D) binary marking code description
PMEG2010BELD
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 18 April 2012
2 of 14
PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
20
1
Unit
V
reverse voltage
forward current
average forward current
Tj = 25 °C
-
-
-
IF
Tsp ≤ 130 °C
A
[1]
IF(AV)
δ = 0.5 ; f = 20 kHz; square wave;
1
A
T
amb ≤ 80 °C
δ = 0.5 ; f = 20 kHz; square wave;
Tsp ≤ 130 °C
-
1
A
IFRM
IFSM
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
-
-
3
6
A
A
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
[2][3]
[4][3]
[1][3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
370
735
1135
150
150
150
mW
mW
mW
°C
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
340
170
110
25
Unit
K/W
K/W
K/W
K/W
[1][2][3]
[1][4][3]
[1][5][3]
[6]
thermal resistance
from junction to
ambient
in free air
-
-
-
-
-
-
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
PMEG2010BELD
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 18 April 2012
3 of 14
PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
006aac928
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.5
0.25
0.1
0.33
0.2
2
10
0.05
0
0.02
0.01
10
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac929
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
0.75
2
10
0.5
0.1
0.33
0.2
0.25
0.05
0.02
0.01
0
10
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2010BELD
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 18 April 2012
4 of 14
PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
006aac930
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
1
10
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
VF
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tj = 25 °C
-
266
310
mV
IF = 500 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tj = 25 °C
-
-
353
428
390
490
mV
mV
IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IR
reverse current
VR = 10 V; Tj = 25 °C
-
-
-
-
28
87
31
1.6
50
200
40
-
µA
µA
pF
ns
VR = 20 V; Tj = 25 °C
Cd
trr
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
VFRM
forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
-
565
-
mV
PMEG2010BELD
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 18 April 2012
5 of 14
PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
006aad057
006aac932
-1
10
10
I
R
I
F
(A)
10
(1)
(2)
(A)
-2
-3
-4
-5
-6
-7
-8
1
(1)
(2)
10
10
10
10
10
10
-1
10
(3)
(3) (4)
(5)
-2
-3
-4
10
10
10
(4)
10
0
0.1
0.2
0.3
0.4
0.5
0.6
(V)
0.7
0
5
15
20
V
F
V (V)
R
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 5. Forward current as a function of forward
voltage; typical values
Fig 6. Reverse current as a function of reverse
voltage; typical values
006aac933
006aad058
70
0.8
C
d
P
(pF)
F(AV)
60
(W)
(4)
0.6
0.4
0.2
0
(3)
50
40
30
20
10
0
(2)
(1)
0
5
10
15
20
0
0.5
1.0
1.5
V
(V)
I
(A)
R
F(AV)
f = 1 MHz; Tamb = 25 °C
Tj = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 7. Diode capacitance as a function of reverse
voltage; typical values
Fig 8. Average forward power dissipation as a
function of average forward current; typical
values
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Product data sheet
Rev. 1 — 18 April 2012
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PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
006aac935
006aad059
1.2
1.5
P
R(AV)
(W)
I
F(AV)
(A)
(1)
(2)
0.8
0.4
0.0
1.0
(1)
(2)
(3)
(3)
(4)
0.5
0
(4)
0
5
10
15
20
0
25
50
75
100
125
150
T (°C)
amb
175
V
(V)
R
Tj = 125 °C
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1 (DC)
(2) δ = 0.9; f = 20 kHz
(3) δ = 0.8; f = 20 kHz
(4) δ = 0.5; f = 20 kHz
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig 9. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
006aad060
0006aad061
1.5
1.5
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
1.0
1.0
(2)
(2)
(3)
(4)
(3)
(4)
0.5
0
0.5
0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
amb
175
T
amb
FR4 PCB, mounting pad for cathode 1 cm2
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
ambient temperature; typical values
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Product data sheet
Rev. 1 — 18 April 2012
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PMEG2010BELD
NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
006aad062
1.5
(1)
(2)
I
F(AV)
(A)
1.0
(3)
(4)
0.5
0
0
25
50
75
100
125
150
(°C)
175
T
sp
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig 13. Average forward current as a function of solder point temperature; typical values
8. Test information
I
F
I
R(meas)
time
I
R
006aad022
t
rr
Fig 14. Reverse recovery definition
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Product data sheet
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8 of 14
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NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
I
F
time
V
F
V
FRM
V
F
time
001aab912
Fig 15. Forward recovery definition
t
p
P
duty cycle δ =
t
cy
t
cy
t
p
t
006aac658
Fig 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG2010BELD
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Product data sheet
Rev. 1 — 18 April 2012
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NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
9. Package outline
0.65
0.55
0.4
max
2
0.30
0.22
1.05
0.95
0.65
1
0.30
0.22
0.55
0.45
cathode marking on top side
Dimensions in mm
10-08-06
Fig 17. Package outline DFN1006D-2 (SOD882D)
10. Soldering
1.4
0.2
solder lands
solder resist
solder paste
0.8
(2×)
0.6 0.7
(2×) (2×)
Dimensions in mm
0.3
0.4
1
1.3
sod882d_fr
Fig 18. Reflow soldering footprint for DFN1006D-2 (SOD882D)
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 18 April 2012
10 of 14
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20 V, 1 A low VF MEGA Schottky barrier rectifier
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG2010BELD v.1
20120418
Product data sheet
-
-
PMEG2010BELD
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Product data sheet
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20 V, 1 A low VF MEGA Schottky barrier rectifier
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMEG2010BELD
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Product data sheet
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NXP Semiconductors
20 V, 1 A low VF MEGA Schottky barrier rectifier
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
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Product data sheet
Rev. 1 — 18 April 2012
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20 V, 1 A low VF MEGA Schottky barrier rectifier
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .8
Quality information . . . . . . . . . . . . . . . . . . . . . . .9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 April 2012
Document identifier: PMEG2010BELD
相关型号：
PMEG2010BEV,115
PMEGXX10BEA; PMEGXX10BEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin
NXP
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