PMEM4020ND,115_技术文档

DISCRETE SEMICONDUCTORS

DATA SHEET

ok, halfpage

M3D302

PMEM4020ND

NPN transistor/Schottky-diode

module

Product data sheet

2003 Nov 10

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

FEATURES

PINNING

• 600 mW total power dissipation

• High current capability

DESCRIPTION

1

2

3

4

5

6

emitter

• Reduces required PCB area

• Reduced pick and place costs

• Small plastic SMD package.

not connected

cathode

anode

base

Transistor:

collector

• Low collector-emitter saturation voltage.

Diode:

handbook, halfpage

6

1

5

2

4

• Ultra high-speed switching

• Very low forward voltage

• Guard ring protected.

3

6

4

5

1

APPLICATIONS

3

MGU865

• DC-to-DC converters

• Inductive load drivers

• MOSFET drivers.

Marking code: B6.

Fig.1 Simplified outline (SOT457) and symbol.

DESCRIPTION

Combination of an NPN transistor with low V_CEsatand high

current capability and a planar Schottky barrier diode with

an integrated guard ring for stress protection in a SOT457

(SC-74) small plastic package.

PNP complement: PMEM4020PD.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME

DESCRIPTION

plastic surface mounted package; 6 leads

VERSION

SOT457

PMEM4020ND

−

2003 Nov 10

2

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

NPN transistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

open emitter

−

40

V

A

open base

open collector

note 1

40

5

0.95

1.30

1.65

2.0

3

note 2

note 3

T_s≤ 55 °C; note 4

I_CM

I_BM

P_tot

peak collector current

peak base current

1

total power dissipation

T_amb≤ 25 °C; note 1

T_amb≤ 25 °C; note 2

T_amb≤ 25 °C; note 3

T_s≤ 55 °C; note 4

295

400

500

1000

150

mW

°C

T_j

junction temperature

Schottky barrier diode

V_R

I_F

continuous reverse voltage

continuous forward current

non-repetitive peak forward current t = 8.3 ms square wave

−

20

V

1

A

I_FSM

P_tot

5

A

total power dissipation

T_amb≤ 25 °C; note 1

T_amb≤ 25 °C; note 2

T_amb≤ 25 °C; note 3

T_s≤ 55 °C; note 4

note 2

295

400

500

1000

150

mW

°C

T_j

junction temperature

Combined device

P_tot

total power dissipation

T_amb= 25 °C; note 2

−

600

mW

°C

T_stg

T_amb

storage temperature

−65

+150

operating ambient temperature

note 2

°C

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and

cathode both 1 cm².

3. Device mounted on a ceramic printed-circuit board, single-sided copper; tinplated; standard footprint.

4. Solder point of collector or cathode tab.

2003 Nov 10

3

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Single device

R_{th j-s}

thermal resistance from junction to

solder point

in free air; notes 1 and 2

95

K/W

R_{th j-a}

thermal resistance from junction to

ambient

in free air; notes 1 and 3

in free air; notes 1 and 4

in free air; notes 1 and 5

250

315

425

K/W

Combined device

R_{th j-a}

thermal resistance from junction to

ambient

in free air; notes 1 and 3

208

K/W

Notes

1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses

P_Rare a significant part of the total power losses. Nomograms for determination of the reverse power losses P_Rand

I_F(AV) rating will be available on request.

2. Solder point of collector or cathode tab.

3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.

4. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; mounting pad for collector and

cathode 1 cm²/each.

5. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.

2003 Nov 10

4

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

ELECTRICAL CHARACTERISTICS

T_amb= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

NPN transistor

I_CBO

collector-base cut-off current

V_CB= 40 V; I_E= 0

−

100

50

nA

µA

nA

V_CB= 40 V; I_E= 0; T_amb= 150 °C

V_CE= 30 V; I_B= 0

−

I_CEO

I_EBO

h_FE

collector-emitter cut-off current

emitter-base cut-off current

current gain (DC)

−

100

−

V_EB= 5 V; I_C= 0

−

V_CE= 5 V; I_C= 1 mA

V_CE= 5 V; I_C= 500 mA

V_CE= 5 V; I_C= 1 A

300

200

75

−

900

−

V_CE= 5 V; I_C= 2 A; note 1

−

V_CEsat

collector-emitter saturation voltage I_C= 100 mA; I_B= 1 mA

I_C= 500 mA; I_B= 50 mA

−

75

mV

V

−

100

190

400

1.2

190

1.1

−

I_C= 1 A; I_B= 100 mA

−

I_C= 2 A; I_B= 200 mA

−

V_BEsat

R_CEsat

V_BEon

f_T

base-emitter saturation voltage

equivalent on-resistance

base-emitter turn-on voltage

transition frequency

I_C= 1 A; I_B= 100 mA

I_C= 1 A; I_B= 100 mA; note 1

V_CE= 5 V; I_C= 1 A

−

150

−

mΩ

V

−

I_C= 50 mA; V_CE= 10 V;

f = 100 MHz

150

−

MHz

C_c

collector capacitance

V_CB= 10 V; I_E= 0; i_e= 0;

f = 1 MHz

−

10

pF

Schottky barrier diode

V_Fcontinuous forward voltage

see Fig.2; note 1

I_F= 10 mA

−

240

300

480

270

350

550

mV

I_F= 100 mA

I_F= 1000 mA

see Fig.3; note 1

V_R= 5 V

I_R

reverse current

−

5

10

20

50

25

µA

pF

V_R= 8 V

7

V_R= 15 V

10

19

C_d

diode capacitance

V_R= 5 V; f = 1 MHz; see Fig.4

Note

1. Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

2003 Nov 10

5

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

GRAPHICAL DATA

MLE230

MHC312

5

3

10

handbook, halfpage

I

R

(µA)

I

F

(1)

(mA)

4

10

2

10

(2)

(3)

3

10

2

10

(1)

(2)

(3)

10

1

0

100

200

300

400

V

500

(mV)

5

10

15

20

25

V

(V)

F

R

Schottky barrier diode.

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

Schottky barrier diode.

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3)

T_amb= 25 °C.

(3)

T_amb= 25 °C.

Fig.2 Forward current as a function of forward

voltage; typical values.

Fig.3 Reverse current as a function of reverse

voltage; typical values.

MHC077

1000

handbook, halfpage

MHC313

h

FE

80

handbook, halfpage

(1)

C

d

800

(pF)

60

600

(2)

400

40

20

0

(3)

200

0

10

−1

2

3

I

4

1

10

(mA)

C

0

5

10

15

20

V

(V)

R

NPN transistor; V_CE= 5 V.

(1) _amb= 150 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

Schottky barrier diode; f = 1 MHz; T_amb= 25 °C.

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Fig.5 DC current gain as a function of collector

current; typical values.

2003 Nov 10

6

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

MHC078

MHC079

3

10

handbook, halfpage

V

CEsat

V

BE

(mV)

(V)

2

10

(1)

1

(1)

(2)

(3)

(2)

10

(3)

−1

10

1

−1

2

3

I

4

2

3

4

1

10

(mA)

10

I

(mA)

C

NPN transistor; V_CE= 5 V.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

NPN transistor; I_C/I_B= 10.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

(3) T_amb= −55 °C.

Fig.6 Base-emitter voltage as a function of

collector current; typical values.

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

MHC080

MHC081

2

10

400

handbook, halfpage

f

T

R

CEsat

(Ω)

(MHz)

300

10

200

1

100

0

(1)

(2)

(3)

−1

10

−1

2

3

I

4

1

10

(mA)

0

200

400

600

800

I

1000

(mA)

C

NPN transistor; I_C/I_B= 10.

(1) _amb= 150 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

NPN transistor; V_CE= 10 V.

Fig.8 Equivalent on-resistance as a function of

collector current; typical values.

Fig.9 Transition frequency as a function of

collector current.

2003 Nov 10

7

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

APPLICATION INFORMATION

V

handbook, halfpage

CC

V

OUT

handbook, halfpage

IN

CONTROLLER

R

load

IN

MLE231

MDB577

Fig.11 Inductive load driver (relays, motors,

buzzers) with free-wheeling diode.

Fig.10 DC-to-DC converter.

2003 Nov 10

8

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads

SOT457

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

c

1

2

3

L

p

e

b

p

w

M B

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

1

b

c

D

E

e

H

L

Q

v

w

y

p

E

0.1

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

mm

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

01-05-04

SOT457

SC-74

2003 Nov 10

9

NXP Semiconductors

Product data sheet

NPN transistor/Schottky-diode module

PMEM4020ND

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

2003 Nov 10

10

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R76/01/pp11

Date of release: 2003 Nov 10

Document order number: 9397 750 11906


型号：	PMEM4020ND,115
厂家：	NXP
描述：	TRANSISTOR 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal 开关光电二极管晶体管
文件：	总11页 (文件大小：106K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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