PSMN057-200B,118 [NXP]
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin;
| 型号： | PSMN057-200B,118 |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K
A
P
2
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
D
15 August 2013
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
•
•
•
3. Applications
DC-to-DC converters
Switched-mode power supplies
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
200
39
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
-
-
-
-
-
-
A
Ptot
total power dissipation
250
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 17 A; Tj = 25 °C
-
-
41
37
57
50
mΩ
nC
VGS = 10 V; ID = 39 A; VDS = 160 V;
Tj = 25 °C
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NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
2
1
3
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN057-200B
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN057-200B
PSMN057-200B
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
200
200
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
Tmb = 100 °C
Tmb = 25 °C
-
27.5
39
A
-
A
IDM
Ptot
Tstg
peak drain current
pulsed; Tmb = 25 °C
Tmb = 25 °C
-
156
250
175
175
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
-55
-55
Tj
PSMN057-200B
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Product data sheet
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2 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
Parameter
Conditions
Min
Max
Unit
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
39
A
A
ISM
pulsed; Tmb = 25 °C
156
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A;
Vsup ≤ 50 V; unclamped; tp = 100 µs;
RGS = 50 Ω
-
-
300
mJ
A
avalanche energy
IAS
non-repetitive avalanche
current
Vsup ≤ 50 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; unclamped
35
003aae646
003aae647
100
100
P
I
der
(%)
80
D
(%)
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Normalized continuous drain current as a
function of mounting base temperature
003aae648
003aae660
3
2
10
10
I
DM
(A)
l
AS
(A)
R
DS(on)
= V / I
DS
D
2
10
tp = 10 µs
100 µs
1 ms
25 °C
10
10
1
D.C.
T prior to avalanche = 150 °C
j
10 ms
100 ms
1
10
2
3
- 3
- 2
- 1
1
10
10
10
10
10
1
10
V
(V)
t
(ms)
AV
DS
Tmb = 25 °C; IDM is single pulse
unclamped inductive load
Fig. 4. Single-shot avalanche rating; avalanche current
as a function of avalanche period
Fig. 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
PSMN057-200B
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Product data sheet
15 August 2013
3 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
-
-
0.6
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
minimum footprint ; FR4 board
-
50
-
K/W
003aae649
1
Z
th(j-mb)
δ = 0.5
0.2
(K/W)
- 1
10
10
10
0.1
0.05
t
p
P
δ =
0.02
T
- 2
- 3
single pulse
t
t
p
T
- 6
- 5
- 4
- 3
- 2
10
- 1
10
10
10
10
10
1
t
(s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
200
-
-
V
178
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C
1
2
-
-
-
V
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C
-
4.4
500
10
100
100
165
57
V
IDSS
drain leakage current
gate leakage current
VDS = 200 V; VGS = 0 V; Tj = 175 °C
VDS = 200 V; VGS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 17 A; Tj = 175 °C
VGS = 10 V; ID = 17 A; Tj = 25 °C
-
-
µA
µA
nA
nA
mΩ
mΩ
-
0.03
2
IGSS
-
-
2
RDSon
drain-source on-state
resistance
-
-
-
41
PSMN057-200B
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© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
4 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RG
internal gate
f = 1 MHz
-
2
4.1
Ω
resistance (AC)
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 39 A; VDS = 160 V; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
96
13
37
135
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
50
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
3750 5036 pF
Coss
Crss
385
180
520
252
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 100 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
-
-
-
-
18
-
-
-
-
-
ns
ns
ns
ns
nH
58
turn-off delay time
fall time
105
78
LD
internal drain
inductance
measured from tab to centre of die ;
Tj = 25 °C
3.5
LS
internal source
inductance
measured from source lead to source
bond pad ; Tj = 25 °C
-
7.5
-
nH
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C
-
-
-
0.85
133
895
1.2
173
-
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 30 V; Tj = 25 °C
recovered charge
Qr
003aae650
003aae651
50
40
30
20
10
0
0.14
l
D
V
(V) = 10
GS
4.2 4.4 4.6
R
(A)
DS(on)
(Ω)
8
6
0.1
0.06
0.02
5.2
5
4.8
4.8
4.6
5
5.2
6
4.4
4.2
V
(V) = 10
GS
0
0.4
0.8
1.2
1.6
V
2
0
10
20
30
40
50
(V)
I (A)
D
DS
Tj = 25 °C
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of drain current; typical values
PSMN057-200B
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Product data sheet
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NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
003aae652
003aae653
40
50
g
fs
(S)
I
D
(A)
40
30
20
10
0
T = 25 °C
j
30
20
10
0
T = 175 °C
j
T = 175 °C
j
T = 25 °C
j
0
2
4
6
0
10
20
30
40
V
(V)
I (A)
D
GS
VDS > ID x RDSon
VDS > ID x RDSon
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 9. Forward transconductance as a function of
drain current; typical values
003aae654
003aae655
2.9
5
V
GS(th)
(V)
a
maximum
4
2.1
typical
3
2
1
0
minimum
1.3
0.5
- 60
20
100
180
- 60
20
100
180
T (°C)
j
T (°C)
j
ID = 1 mA; VDS = VGS
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
003aae656
003aae657
- 1
4
10
10
l
D
(A)
10
C
iss
- 2
- 3
- 4
- 5
- 6
C
(pF)
10
10
10
10
3
10
minimum
typical
maximum
C
oss
C
rss
2
10
- 1
2
0
1
2
3
4
5
10
1
10
10
V
(V)
V
(V)
DS
GS
Tj = 25 °C; VDS = VGS
VGS = 0 V; f = 1 MHz
Fig. 12. Sub-threshold drain current as a function of
gate-source voltage
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN057-200B
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Product data sheet
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6 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
003aae658
003aae659
16
40
V
GS
(V)
I
F
(A)
12
8
30
20
10
0
V
= 40 V
V
= 160 V
DD
DD
T = 25 °C
j
T = 175 °C
j
4
0
0
40
80
120
160
0
0.4
0.8
1.2
Q
G
(nC)
V
(V)
SDS
VGS = 0 V
Tj = 25 °C; ID = 39 A
Fig. 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
PSMN057-200B
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© NXP N.V. 2013. All rights reserved
Product data sheet
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NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
11. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
b
2
e
e
Q
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
b
c
D
D
1
E
e
H
D
L
p
Q
1
2
max 4.5 1.40 0.85 1.45 0.64 11
nom
min 4.1 1.27 0.60 1.05 0.46
1.6 10.3
1.2 9.7
15.8 2.9 2.6
14.8 2.1 2.2
2.54
mm
sot404_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
06-03-16
13-02-25
SOT404
Fig. 16. Package outline D2PAK (SOT404)
PSMN057-200B
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Product data sheet
15 August 2013
8 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PSMN057-200B
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Product data sheet
15 August 2013
9 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN057-200B
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© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
10 / 11
NXP Semiconductors
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................4
Package outline ..................................................... 8
2
3
4
5
6
7
8
9
10
11
12
Legal information ...................................................9
Data sheet status ................................................. 9
Definitions .............................................................9
Disclaimers ...........................................................9
Trademarks ........................................................ 10
12.1
12.2
12.3
12.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 August 2013
PSMN057-200B
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© NXP N.V. 2013. All rights reserved
Product data sheet
15 August 2013
11 / 11
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NXP
PSMN063-150D/T3
TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power
NXP
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