PSMN165-200K [NXP]
N-channel enhancement mode field-effect transistor; N沟道增强模式音响场效晶体管
| 型号： | PSMN165-200K |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode field-effect transistor |
| 文件： | 总13页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN165-200K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001
Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN165-200K in SOT96-1 (SO8).
2. Features
■ Very low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertor
■ Computer motherboards
■ Switch mode power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin
Description
source (s)
gate (g)
Simplified outline
Symbol
1,2,3
4
d
s
8
5
5,6,7,8
drain (d)
g
1
4
MBB076
Top view
MBK187
SOT96-1 (SO8)
1. SiliconMAX is a trademark of Royal Philips Electronics.
2. TrenchMOS is a trademark of Royal Philips Electronics.
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Tj = 25 to 150 °C
Tsp = 80 °C
Typ
−
Max
200
2.9
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
−
A
Ptot
Tj
total power dissipation
junction temperature
Tsp = 80 °C
−
3.5
W
−
150
165
°C
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.5 A; Tj = 25 °C
130
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
200
±20
2.9
Unit
V
VDS
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
gate-source voltage (DC)
drain current (DC)
−
V
Tsp = 80 °C; Figure 2 and 3
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Tsp = 80 °C; Figure 1
−
A
IDM
Ptot
Tstg
Tj
peak drain current
−
20
A
total power dissipation
storage temperature
−
3.5
W
°C
°C
−55
−55
+150
+150
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 80 °C
−
−
3.1
20
A
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
2 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa25
03aa17
120
120
P
I
der
(%)
100
der
(%)
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
sp
T
( C)
sp
V
GS ≥ 5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ae06
2
10
RDSon = VDS/ ID
ID
(A)
10
tp = 10 µs
100 µs
1 ms
1
10 ms
t
p
P
δ =
T
D.C.
100 ms
-1
10
t
t
p
T
-2
10
2
3
10
1
10
10
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
3 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
mounted on a metal clad substrate; Figure 4
Value Unit
20 K/W
Rth(j-sp) thermal resistance from junction to solder
point
7.1 Transient thermal impedance
03ae05
2
10
Zth(j-sp)
(K/W)
δ = 0.5
10
0.2
0.1
0.05
1
0.02
t
p
P
δ =
T
-1
10
t
t
single pulse
p
T
-2
10
-4
-3
10
-2
10
-1
10
2
10
tp (s)
10
1
10
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
4 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
200 240
−
V
VGS(th)
gate-source threshold voltage
2
−
−
−
−
−
−
4
V
Tj = 150 °C
1.2
−
−
V
Tj = −55 °C
6
V
IDSS
drain-source leakage current
VDS = 160 V; VGS = 0 V; Tj = 25 °C
VDS = 200 V; VGS = 0 V; Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 2.5 A; Figure 7 and 8
Tj = 25 °C
−
1
µA
mA
−
0.5
IGSS
gate-source leakage current
−
100 nA
RDSon
drain-source on-state resistance
−
−
130 165 mΩ
325 413 mΩ
Tj = 150 °C
Dynamic characteristics
gfs
forward transconductance
VDS = 15 V; ID = 2.9 A; Figure 11
−
−
−
−
−
−
−
−
−
−
−
10
40
4.5
12
−
−
−
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 3 A; VDD = 100 V; VGS = 10 V; Figure 14
nC
nC
16.5 nC
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
1330 −
pF
pF
pF
ns
ns
ns
ns
140
70
12
11
50
25
−
−
VDD = 100 V; RD = 100 Ω;
VGS = 10 V; RG = 6 Ω
25
25
80
40
td(off)
tf
turn-off delay time
fall time
Source-drain (reverse) diode
VSD
trr
source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13
−
−
−
0.7
1.1
−
V
reverse recovery time
recovery charge
IS = 2.9 A; dIS/dt = −100 A/µs; VGS = 0 V
105
0.45
ns
µC
Qr
−
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
5 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ae07
03ae09
20
20
ID
5 V
VGS = 10 V
VDS > ID X RDSon
ID
(A)
(A)
15
15
4.5 V
10
5
10
5
4 V
Tj = 150 ºC
25 ºC
3.5 V
0
0
0
1
2
3
4
5
VGS (V)
5
VDS (V)
0
1
2
3
4
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa31
3
a
03ae08
0.3
2.8
2.6
2.4
2.2
2
4.5 V
VGS = 4 V
Tj = 25 ºC
RDSon
(Ω)
0.25
0.2
1.8
1.6
1.4
1.2
1
5 V
10 V
0.8
0.6
0.4
0.2
0
0.15
0.1
-60
-20
20
60
100
140
180
o
T ( C)
0
5
10
15
20
ID (A)
j
Tj = 25 °C
RDSon
a =
---------------------------
R
°
DSon(25 C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
6 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa32
03aa35
5
-1
10
4.5
I
D
V
GS(th)
(A)
-2
4
10
(V)
max.
3.5
3
-3
10
typ.
min
2.5
2
min
typ
max
-4
-5
-6
10
10
10
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae10
03ae12
4
30
gfs
10
VDS > ID X RDSon
Ciss
,
(S)
25
Coss
,
Tj = 25 ºC
Crss
(pF)
Ciss
3
20
15
10
5
10
150 ºC
Coss
Crss
2
10
0
10
-1
2
10
0
5
10
15
20
10
1
10
ID (A)
VDS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
7 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ae11
03ae13
20
10
VGS = 0 V
IS
ID = 3 A
VGS
Tj = 25 ºC
(V)
8
(A)
VDD = 40 V 100 V 160 V
15
6
4
2
0
10
5
Tj = 150 ºC
25 ºC
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
QG (nC)
30
0
15
45
Tj = 25 °C and 150 °C; VGS = 0 V
ID = 3 A; VDD = 40 V, 100 V and 160 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
8 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
p
b
5 mm
2.5
0
scale
DIMENSIONS (inchdimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(2)
w
b
p
UNIT
A
A
A
c
D
E
e
H
L
L
p
Q
v
y
Z
θ
1
2
3
E
1.45
0.49 0.25 5.0
4.0
6.2
1.0
0.1
0.25
0.10
0.7
0.6
0.7
0.3
1.27
mm
1.05
0.25
0.25
1.75
0.25
8o
0o
1.25
0.36 0.19 4.8
3.8
5.8
0.4
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.050
0.01
0.041
0.01
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
076E03
JEDEC
MS-012
EIAJ
97-05-22
99-12-27
SOT96-1
Fig 15. SOT96-1 (SO8).
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
9 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
Product specification; initial version
01 20010116
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
10 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07896
© Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 01 — 16 January 2001
11 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
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For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA71)
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 16 January 2001
12 of 13
PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 January 2001
Document order number: 9397 750 07896
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