PSMN1R0-40SSH [NEXPERIA]

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 TechnologyProduction;


型号：	PSMN1R0-40SSH
厂家：	Nexperia
描述：	N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 TechnologyProduction
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中文：	中文翻译
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PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level

MOSFET in LFPAK88 using NextPowerS3 Technology

1 May 2019

Product data sheet

1. General description

325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET

in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology

delivers high efficiency and low spiking performance usually associated with MOSFETs with

an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and

also safe and reliable switching at high load-current.

2. Features and benefits

•

325 Amp continuous current capability

•

LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

Copper-clip and solder die attach for low package inductance and resistance, and high I_D(max)

rating

•

Ideal replacement for D2PAK and 10 x 12 mm leadless package types

Qualified to 175 °C

Meets UL2595 requirements for creepage and clearance

Avalanche rated, 100 % tested

Low Q_G, Q_GDand Q_OSSfor high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

•

Unique “SchottkyPlus” technology for Schottky-like switching performance and low I_DSSleakage

Narrow V_GS(th)rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

•

Brushless DC motor control

Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies

Battery protection

eFuse and load switch

Hotswap / in-rush current management

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

325

375

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from Fig. 5

junction to mounting

base

0.35

0.4

K/W

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

0.62

0.88

mΩ

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 25 A; V_DS= 32 V; V_GS= 10 V;

Fig. 13; Fig. 14

137

Source-drain diode

Q_rrecovered charge

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V; [2]

V_DS= 20 V; Fig. 17

[1] 325A. Continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB,

thermal design and operating temperature.

[2] includes capacitive recovery

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

source

mbb076

mounting base; connected to

drain

LFPAK88 (SOT1235)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PSMN1R0-40SSH

LFPAK88

plastic, single-ended surface-mounted package (LFPAK88); 4

leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body

SOT1235

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

25 °C ≤ T_j≤ 175 °C

V_DSM

peak drain-source

voltage

t_p≤ 20 ns; f ≤ 500 kHz; E_DS(AL)≤ 200 nJ;

pulsed

V_DGR

V_GS

P_tot

drain-gate voltage

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

gate-source voltage

total power dissipation

-20

T_mb= 25 °C; Fig. 1

375

PSMN1R0-40SSH

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Product data sheet

1 May 2019

2 / 13

Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

Symbol

Parameter

Conditions

Min

Max

325

293

1659

175

260

Unit

I_D

drain current

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

peak drain current

storage temperature

junction temperature

T_stg

T_j

-55

°C

T_sld(M)

peak soldering

temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

[2]

[3]

350

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

1659

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 120 A; V_sup≤ 40 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 4

437

237

I_AS

non-repetitive avalanche V_sup= 40 V; V_GS= 10 V; T_j(init)= 25 °C;

current

R_GS= 50 Ω

[1] 325A. Continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB,

thermal design and operating temperature.

[2] 350A. Continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB,

thermal design and operating temperature.

[3] Protected by 100% test

03aa16

aaa-029499

120

500

400

300

200

100

(A)

der

(%)

(1)

100

150

200

75 100 125 150 175 200

(°C)

V_GS≥ 10 V

(1) 325A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

PSMN1R0-40SSH

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Product data sheet

1 May 2019

3 / 13

Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

aaa-029486

(A)

Limit R

= V / I

DSon DS D

= 10 µs

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

aaa-028928

(A)

(1)

(2)

(3)

-1

-3

-2

-1

(ms)

(1) T_{j (init)}= 25 °C; (2) T_{j (init)}= 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from Fig. 5

junction to mounting

base

0.35

0.4

K/W

R_th(j-a)

thermal resistance from Fig. 6

K/W

junction to ambient

Fig. 7

PSMN1R0-40SSH

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Product data sheet

1 May 2019

4 / 13

Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

aaa-028930

th(j-mb)

(K/W)

δ = 0.5

-1

0.2

0.1

0.05

0.02

single shot

-2

-3

δ =

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-029383

aaa-029384

Copper square 25.4 mm x 25.4 mm; 70 μm thick on

FR4 board

70 μm thick copper on FR4 board

Fig. 7. PCB layout with minimum footprint for thermal

resistance from junction to ambient

Fig. 6. PCB layout for resistance from junction to

ambient

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

2.4

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

3.6

ΔV_GS(th)/ΔT

gate-source threshold 25 °C ≤ T_j≤ 175 °C

voltage variation with

-7.7

mV/K

temperature

I_DSS

drain leakage current

gate leakage current

V_DS= 32 V; V_GS= 0 V; T_j= 25 °C

V_DS= 32 V; V_GS= 0 V; T_j= 175 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

µA

mΩ

134

I_GSS

100

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

0.62

0.88

PSMN1R0-40SSH

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Product data sheet

1 May 2019

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

Fig. 12

1.2

1.8

2.2

mΩ

R_G

gate resistance

f = 1 MHz; T_j= 25 °C

0.4

0.9

2.3

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 32 V; V_GS= 10 V;

Fig. 13; Fig. 14

137

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

Q_GS

gate-source charge

I_D= 25 A; V_DS= 32 V; V_GS= 10 V;

Fig. 13; Fig. 14

Q_GS(th)

pre-threshold gate-

source charge

Q_GS(th-pl)

post-threshold gate-

source charge

Q_GD

gate-drain charge

V_GS(pl)

gate-source plateau

voltage

I_D= 25 A; V_DS= 32 V; Fig. 13; Fig. 14

4.1

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 15

7373 10322 pF

1578 2209 pF

reverse transfer

capacitance

295

649

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 10 V;

R_G(ext)= 5 Ω

turn-off delay time

fall time

Q_oss

output charge

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C

Source-drain diode

V_SD

t_rr

source-drain voltage

V_GS= 0 V; T_j= 25 °C; Fig. 16

0.76

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; Fig. 17

Q_r

t_a

recovered charge

[1]

reverse recovery rise

time

t_b

reverse recovery fall

time

[1] includes capacitive recovery

PSMN1R0-40SSH

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Product data sheet

1 May 2019

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

aaa-028931

aaa-028932

400

320

240

160

DSon

(mΩ)

= 5.5 V

5 V

(A)

10 V

7 V

4.5 V

6 V

4 V

V (V)

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig. 8. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-028933

aaa-028934

400

DSon

(mΩ)

4.5 V

(A)

320

240

160

3.2

5 V

2.4

1.6

0.8

6 V 7 V

5.5 V

175°C

25°C

T = -55°C

= 10 V

160

240

320

(A)

400

(V)

V_DS= 8 V

T_j= 25 °C

Fig. 10. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values

PSMN1R0-40SSH

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Product data sheet

1 May 2019

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

aaa-026897

aaa-028935

2.4

(V)

1.6

1.2

0.8

0.4

32 V

= 14 V

-60 -30

90 120 150 180

100

Q (nC)

120

T (°C)

T_j= 25 °C; I_D= 25 A

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

aaa-028936

(pF)

GS(pl)

iss

GS(th)

oss

rss

GS2

GS1

G(tot)

003aaa508

Fig. 14. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN1R0-40SSH

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Product data sheet

1 May 2019

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

003aal160

aaa-028937

400

320

240

160

(A)

175°C

0.25 I

T = 25°C

t (s)

0.2

0.4

0.6

0.8

(V)

1.2

Fig. 17. Reverse recovery timing definition

V_GS= 0 V

Fig. 16. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

PSMN1R0-40SSH

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Product data sheet

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

10. Package outline

Plastic single-ended surface-mounted package (LFPAK88); 4 leads

SOT1235

detail X

mounting

base

(4x)

8 mm

scale

Dimensions (mm are the original dimensions)

(1)

Unit

max 0.15 1.7

nom

1.1

7.3 0.24 0.55 6.3

7.1 0.18 0.45 6.1

5.1

4.9

8.1

7.9

6.9

6.7

8.1

7.8

0.8

1.3

0.9

0.25

2.0

0.25 0.10

0.00 1.5

0.9

0.6

min

Note

1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

sot1235_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

17-08-02

17-08-07

SOT1235

Fig. 18. Package outline LFPAK88 (SOT1235)

PSMN1R0-40SSH

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Product data sheet

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

11. Soldering

Footprint information for reflow soldering of LFPAK88 package

SOT1235

9.2

8.8

8.6

0.3

0.2

1.85

2.05

1.7

2.1

0.2

1.2

0.7

0.1

0.2

1.25

1.76

4.275

2.925

5.7

1.15

7.8

3.74

9.4

0.2

1.225

1.9

1.6 1.4 1.3

1.6

6.55

6.8

1.2

1.4

1.1

7.8

recommended stencil thickness: 0.125 mm

solder resist

occupied area

solder land

solder paste

Dimensions in mm

18-12-12

18-12-13

Issue date

sot1235_fr

Fig. 19. Reflow soldering footprint for LFPAK88 (SOT1235)

PSMN1R0-40SSH

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Product data sheet

1 May 2019

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

12. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

Data sheet status

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

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[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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PSMN1R0-40SSH

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Product data sheet

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Nexperia

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3

Technology

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 2

8. Thermal characteristics............................................... 4

9. Characteristics..............................................................5

10. Package outline........................................................ 10

11. Soldering................................................................... 11

12. Legal information......................................................12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 1 May 2019

PSMN1R0-40SSH

All information provided in this document is subject to legal disclaimers.

Product data sheet

1 May 2019

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PSMN1R0-40SSH [NEXPERIA]

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