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PSMN4R3-30PL [NXP]

N-channel 30 V 4.3 mΩ logic level MOSFET; N沟道30 V 4.3 mΩ的逻辑电平MOSFET
PSMN4R3-30PL
型号： PSMN4R3-30PL
厂家： NXP    NXP
描述：

N-channel 30 V 4.3 mΩ logic level MOSFET
N沟道30 V 4.3 mΩ的逻辑电平MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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PSMN4R3-30PL  
N-channel 30 V 4.3 mΩ logic level MOSFET  
Rev. 01 — 16 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for logic level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC converters  
„ Load switiching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
30  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
[1]  
100  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
103  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 4.5 V; ID = 25 A;  
VDS = 15 V; see Figure 14;  
see Figure 15  
5
nC  
Static characteristics  
RDSon  
drain-source  
VGS = 10 V; ID = 15 A;  
[2]  
-
3.5  
4.3  
mΩ  
on-state resistance  
Tj = 25 °C; see Figure 13  
[1] Continuous current is limited by package.  
[2] Measured 3 mm from package.  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
2. Pinning information  
Table 2.  
Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
G
D
S
D
gate  
mb  
D
2
drain  
source  
3
G
mb  
mounting base; connected to  
drain  
mbb076  
S
1
2 3  
SOT78  
( T O - 2 2 0 A B ; S C - 4 6 )  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PSMN4R3-30PL  
TO-220AB;  
SC-46  
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78  
TO-220AB  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
2 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
30  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ  
-
VDGR  
VGS  
-
30  
V
-20  
20  
V
ID  
VGS = 10 V; Tmb = 100 °C; see Figure 1  
VGS = 10 V; Tmb = 25 °C; see Figure 1  
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3  
[1]  
[1]  
-
80  
A
-
100  
465  
103  
175  
175  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
-
A
total power dissipation Tmb = 25 °C; see Figure 2  
storage temperature  
-
W
°C  
°C  
-55  
-55  
junction temperature  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
[1]  
-
-
100  
465  
A
A
ISM  
tp ≤ 10 µs; pulsed; Tmb = 25 °C  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V;  
-
74  
mJ  
drain-source avalanche RGS = 50 Ω; unclamped  
energy  
[1] Continuous current is limited by package.  
003aad235  
03aa16  
120  
150  
ID  
P
der  
(A)  
(%)  
80  
100  
(1)  
50  
40  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
mb (°C)  
T
mb  
(°C)  
Fig 1. Continuous drain current as a function of  
mounting base temperature  
Fig 2. Normalized total power dissipation as a  
function of mounting base temperature  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
3 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
003aad296  
103  
ID  
Limit RDSon = VDS / ID  
(A)  
10 μs  
102  
(1)  
100 μs  
10  
1 ms  
DC  
10 ms  
100 ms  
1
10-1  
1
10  
102  
VDS (V)  
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from see Figure 4  
junction to mounting  
base  
-
1
1.5  
K/W  
003aad234  
10  
Zth (j-mb)  
(K/W)  
1
δ = 0.5  
0.2  
0.1  
10-1  
10-2  
10-3  
10-4  
0.05  
0.02  
tp  
T
P
δ =  
single shot  
t
tp  
T
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
1
10  
tp (s)  
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
4 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
30  
27  
1.3  
-
-
V
V
V
-
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;  
1.7  
2.15  
voltage  
see Figure 10; see Figure 11  
ID = 1 mA; VDS = VGS; Tj = 175 °C;  
see Figure 11  
0.5  
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;  
see Figure 11  
2.45  
IDSS  
drain leakage current  
gate leakage current  
VDS = 30 V; VGS = 0 V; Tj = 25 °C  
VDS = 30 V; VGS = 0 V; Tj = 125 °C  
VGS = 16 V; VDS = 0 V; Tj = 25 °C  
VGS = -16 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; ID = 15 A; Tj = 25 °C  
-
-
-
-
-
-
-
1
µA  
µA  
nA  
-
40  
100  
100  
6.2  
6
IGSS  
-
-
nA  
RDSon  
drain-source on-state  
resistance  
[2]  
[2]  
4.5  
-
mΩ  
mΩ  
VGS = 10 V; ID = 15 A; Tj = 100 °C;  
see Figure 12; see Figure 13  
VGS = 10 V; ID = 15 A; Tj = 25 °C;  
see Figure 13;  
-
-
3.5  
1
4.3  
-
mΩ  
RG  
gate resistance  
f = 1 MHz  
Ω
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 25 A; VDS = 15 V; VGS = 4.5 V;  
see Figure 14; see Figure 15  
-
-
19  
-
-
nC  
nC  
ID = 25 A; VDS = 15 V; VGS = 10 V;  
see Figure 14; see Figure 15  
41.5  
QGS  
gate-source charge  
ID = 25 A; VDS = 15 V; VGS = 4.5 V;  
see Figure 14; see Figure 15  
-
-
8
4
-
-
nC  
nC  
QGS(th)  
pre-threshold  
gate-source charge  
QGS(th-pl)  
post-threshold  
-
4
-
nC  
gate-source charge  
QGD  
gate-drain charge  
-
-
5
-
-
nC  
V
VGS(pl)  
gate-source plateau  
voltage  
VDS = 15 V; see Figure 14;  
see Figure 15  
2.7  
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VDS = 12 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; see Figure 16  
-
-
-
2400  
500  
-
-
-
pF  
pF  
pF  
reverse transfer  
capacitance  
240  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 20 V; RL = 0.5 Ω; VGS = 10 V;  
RG(ext) = 5.6 Ω  
-
-
-
-
28  
58  
44  
21  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
5 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
Table 6.  
Symbol  
Characteristics …continued  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Source-drain diode  
VSD  
source-drain voltage  
IS = 25 A; VGS = 0 V; Tj = 25 °C;  
see Figure 17  
-
0.81  
1.2  
V
trr  
reverse recovery time  
recovered charge  
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;  
VDS = 30 V  
-
-
35  
30  
-
-
ns  
Qr  
nC  
[1] Tested to JEDEC standards where applicable.  
[2] Measured 3 mm from package.  
003aad244  
003aad241  
120  
80  
40  
0
100  
ID  
(A)  
80  
gfs  
(S)  
Tj = 175 °C  
60  
40  
20  
0
25 °C  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
ID (A)  
VGS (V)  
Fig 6. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 5. Forward transconductance as a function of  
drain current; typical values  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
6 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
003aad240  
003aad238  
5000  
12  
RDSon  
(mΩ)  
C
(pF)  
4000  
3000  
2000  
1000  
0
Ciss  
8
4
0
Crss  
0
3
6
9
12  
0
5
10  
15  
VGS (V)  
V
GS (V)  
Fig 8. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
Fig 7. Input and reverse transfer capacitances as a  
function of gate-source voltage; typical values  
003aad236  
003aab271  
10-1  
100  
10  
5
ID  
ID  
(A)  
(A)  
10-2  
80  
4
3
min  
typ  
max  
3.5  
10-3  
10-4  
10-5  
10-6  
60  
40  
VGS (V) =2.5  
20  
0
0
1
2
V
GS (V)  
3
0
1
2
3
4
5
VDS (V)  
Fig 10. Sub-threshold drain current as a function of  
gate-source voltage  
Fig 9. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
7 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
003aac982  
03aa27  
2
3
a
VGS(th)  
(V)  
max  
1.5  
2
typ  
1
min  
1
0.5  
0
0
-60  
−60  
0
60  
120  
180  
0
60  
120  
180  
T ( C)  
°
j
Tj (°C)  
Fig 11. Gate-source threshold voltage as a function of  
junction temperature  
Fig 12. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
003aad237  
16  
V
DS  
RDSon  
(mΩ)  
I
D
3
12  
V
GS(pl)  
3.5  
V
GS(th)  
8
4.5  
4
V
GS  
Q
GS1  
Q
GS2  
5
4
Q
GS  
Q
GD  
Q
G(tot)  
VGS (V) =10  
003aaa508  
0
Fig 14. Gate charge waveform definitions  
0
20  
40  
60  
80  
100  
ID (A)  
Fig 13. Drain-source on-state resistance as a function  
of drain current; typical values  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
8 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
003aad242  
003aad239  
10  
VGS  
(V)  
104  
C
(pF)  
8
Ciss  
6
VDS = 15V  
103  
4
2
0
Coss  
Crss  
102  
10-1  
0
20  
40  
60  
1
10  
VDS (V) 102  
Q
G (nC)  
Fig 15. Gate-source voltage as a function of gate  
charge; typical values  
Fig 16. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
003aad243  
100  
IS  
(A)  
80  
60  
40  
20  
0
Tj = 175 °C  
25 °C  
0
0.5  
1
1.5  
2
V
SD (V)  
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
9 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
7. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
D
1
base  
D
(1)  
(1)  
L
1
L
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
Fig 18. Package outline SOT78 (TO-220AB)  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
10 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
8. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PSMN4R3-30PL_1  
20090616  
Product data sheet  
-
-
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
11 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
9. Legal information  
9.1 Data sheet status  
Document status [1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Applications — Applications that are described herein for any of these  
9.2 Definitions  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
9.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
9.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
TrenchMOS — is a trademark of NXP B.V.  
10. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PSMN4R3-30PL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 16 June 2009  
12 of 13  
PSMN4R3-30PL  
NXP Semiconductors  
N-channel 30 V 4.3 mΩ logic level MOSFET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 16 June 2009  
Document identifier: PSMN4R3-30PL_1  

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