PSMN4R6-60PS,127 [NXP]
PSMN4R6-60PS - N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 TO-220 3-Pin;型号: | PSMN4R6-60PS,127 |
厂家: | NXP |
描述: | PSMN4R6-60PS - N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 TO-220 3-Pin 局域网 开关 脉冲 晶体管 |
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PSMN4R6-60PS
O-220AB
T
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Rev. 3 — 18 April 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for standard level gate drive
and conduction losses
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; see Figure 1
-
-
-
-
-
[1]
ID
-
100
211
175
A
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
-
-
8.05
3.5
10.6
4.6
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
-
-
14.8
70.8
-
-
nC
nC
QG(tot)
Avalanche ruggedness
EDS(AL)S non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
-
266
mJ
drain-source
Vsup ≤ 60 V; RGS = 50 Ω; unclamped
avalanche energy
[1] Continuous current is limited by package.
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
S
2
drain
source
3
G
mb
mounting base;
connected to drain
mbb076
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN4R6-60PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
4. Marking
Table 4.
Marking codes
Type number
PSMN4R6-60PS
Marking code
PSMN4R6-60PS
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
2 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
60
V
-20
20
V
[1]
[1]
ID
Tmb = 100 °C; see Figure 1
Tmb = 25 °C; see Figure 1
-
-
-
99.7
100
565
A
A
IDM
peak drain current
pulsed; tp = 10 µs; Tmb = 25 °C;
see Figure 3
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; see Figure 2
-
211
175
175
W
-55
-55
°C
°C
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C
-
-
100
565
A
A
ISM
pulsed; tp = 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 60 V; RGS = 50 Ω; unclamped
-
266
mJ
[1] Continuous current is limited by package.
03aa16
003aad760
120
150
I
D
P
der
(A)
(%)
(1)
80
100
50
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R6-60PS
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
3 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
003aad761
3
10
I
D
t =10
s
μ
(A)
p
Limit R
= V / I
DS
DSon
D
2
10
100 μs
DC
10
1
1 ms
10 ms
100 ms
−1
10
−1
2
10
1
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
see Figure 4
-
0.38
0.71
K/W
003aad762
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
0.1
−1
10
0.05
0.02
t
p
single shot
P
δ =
−2
10
T
t
t
p
T
−3
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(S)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values.
PSMN4R6-60PS
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
4 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
54
60
2
-
-
V
V
V
-
-
VGS(th)
VGSth
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage see Figure 10; see Figure 11
3
4
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
-
-
-
4.6
-
V
V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
1
IDSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.05
-
10
µA
µA
nA
nA
mΩ
200
100
100
10.6
IGSS
10
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
8.05
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
-
-
-
-
7.4
4.6
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 25 °C;
3.5
0.79
see Figure 13
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 14
-
63
-
nC
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
-
-
-
70.8
19.5
13.5
-
-
-
nC
nC
nC
QGS
gate-source charge
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 14
QGS(th-pl)
QGD
post-threshold
gate-source charge
-
-
-
6
-
-
-
nC
nC
V
gate-drain charge
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
14.8
4.3
VGS(pl)
gate-source plateau
voltage
VDS = 30 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
-
4426
567
-
-
-
pF
pF
pF
reverse transfer
capacitance
293
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
26
24
58
22
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
5 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Table 7.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
0.81
1.1
V
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
45
64
-
-
ns
VDS = 30 V
Qr
recovered charge
nC
003aad763
003aad769
100
D
(A)
100
6
5.5
g
fs
15
8
I
5
(S)
80
80
60
40
20
0
60
40
20
0
4.5
V
(V) = 4
GS
0
0.5
1
1.5
2
0
20
40
60
80
100
V
(V)
I
D
(A)
DS
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
003aad765
003aad764
100
8000
I
D
C
(pF)
C
iss
(A)
80
60
40
20
0
6000
C
rss
4000
2000
0
T = 175 °C
j
T = 25 °C
j
0
2
4
6
0
4
8
12
V
GS
(V)
V
GS
(V)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN4R6-60PS
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
6 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
03aa35
003aad766
−1
10
20
I
D
R
DSon
(A)
(mΩ)
min
typ
max
−2
−3
−4
−5
−6
10
15
10
5
10
10
10
10
0
4
8
12
16
20
0
2
4
6
V
(V)
GS
V
(V)
GS
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad280
003aad696
5
2.4
V
a
GS(th)
(V)
2
4
3
2
1
0
max
1.6
1.2
0.8
0.4
0
typ
min
−60
0
60
120
180
-60
0
60
120
180
T ( C)
°
T (°C)
j
j
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature.
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
7 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
003aad767
16
R
DSon
5
V
= 4.5 V
GS
(mΩ)
V
DS
12
I
D
V
GS(pl)
8
4
0
5.5
6
V
GS(th)
GS
8
V
10
15
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
0
20
40
60
80
100
I
D
(A)
003aaa508
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
003aad771
003aad768
4
10
10
V
GS
C
(pF)
(V)
C
iss
8
6
4
2
0
V
(V) = 30
12
DS
48
3
10
C
oss
C
rss
2
10
−1
2
0
20
40
60
80
10
1
10
10
V
(V)
Q
(nC)
DS
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
8 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
003aad770
100
I
S
(A)
80
60
40
20
0
T = 175 °C
j
T = 25 °C
j
0
0.3
0.6
0.9
1.2
V
(V)
SD
Fig 17. Source current as a function of source-drain voltage; typical values
PSMN4R6-60PS
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
9 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 18. Package outline SOT78 (TO-220AB)
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
10 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN4R6-60PS v.3
Modifications:
20120418
Product data sheet
-
PSMN4R6-60PS v.2
• Various changes to content.
20101101 Product data sheet
PSMN4R6-60PS v.2
-
PSMN4R6-60PS v.1
PSMN4R6-60PS
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
11 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
10. Legal information
10.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
10.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
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applications and therefore such inclusion and/or use is at the customer’s own
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modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
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damage, costs or problem which is based on any weakness or default in the
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Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
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contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
12 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
11. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PSMN4R6-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 April 2012
13 of 14
PSMN4R6-60PS
NXP Semiconductors
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10.1
10.2
10.3
10.4
11
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 April 2012
Document identifier: PSMN4R6-60PS
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