PSS9013H [NXP]
20 V NPN general purpose transistors; 20 V NPN通用晶体管
| 型号： | PSS9013H |
| 厂家： | 
NXP |
| 描述： | 20 V NPN general purpose transistors |
| 文件： | 总9页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
PSS9013 series
20 V NPN general purpose
transistors
Product specification
2004 Aug 10
Supersedes data of 2003 May 15
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
FEATURES
QUICK REFERENCE DATA
• High power dissipation: 710 mW
• Low collector capacitance
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
20
500
1
V
• Low collector-emitter saturation voltage
• High current capability.
mA
A
ICM
APPLICATIONS
PINNING
PIN
• General purpose switching and amplification.
DESCRIPTION
1
2
3
collector
base
DESCRIPTION
NPN general purpose transistor in a SOT54 (TO-92)
leaded plastic package. PNP complement:
PSS9012 series.
emitter
1
handbook, halfpage
1
MARKING
2
3
TYPE NUMBER
PSS9013G
MARKING CODE
S9013G
2
3
MAM279
PSS9013H
S9013H
Fig.1 Simplified outline (SOT54; TO-92) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
20
open collector
5
500
1
mA
A
ICM
IBM
100
710
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
2004 Aug 10
2
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
175
K/W
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 35 V; IE = 0
MIN.
TYP.
MAX.
100
UNIT
ICBO
collector-base cut-off current
−
−
−
−
−
−
−
nA
µA
nA
VCB = 35 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
50
100
−
IEBO
hFE
hFE
emitter-base cut-off current
DC current gain
DC current gain
PSS9013G
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 50 mA
40
112
144
−
−
−
166
202
250
600
1.2
PSS9013H
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 500 mA; IB = 50 mA
60
250
1
mV
mV
V
−
VBEsat
base-emitter saturation
voltage
−
VBEon
Cc
base-emitter turn on voltage
collector capacitance
VCE = 1 V; IC = 100mA
−
−
760
5
1000
mV
pF
VCB = 6 V; IE = Ie = 0; f = 1 MHz
−
2004 Aug 10
3
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
MLE086
MLE087
3
10
30
handbook, halfpage
handbook, halfpage
(1)
(2)
I
C
(mA)
f
T
(MHz)
20
(3)
(4)
(5)
(6)
(7)
2
10
10
10
0
0
2
3
1
10
10
10
4
8
12
16
V
20
(V)
I
(mA)
C
CE
Tamb = 25 °C.
(1) IB = 140 µA.
(2) IB = 120 µA.
(3) IB = 100 µA.
(4) IB = 80 µA.
(5) IB = 60 µA.
(6) IB = 40 µA.
(7) IB = 20 µA.
VCE = 6 V.
Fig.2 Transition frequency as a function of
collector current; typical values.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
MLE088
MLE089
300
300
handbook, halfpage
handbook, halfpage
h
h
FE
FE
(1)
(2)
(1)
(2)
200
100
0
200
(3)
(3)
100
0
10
−1
2
3
−1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 1 V.
VCE = 2 V.
(1) amb = 100 °C.
(1)
Tamb = 100 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 DC current gain as a function of collector
current; typical values.
2004 Aug 10
4
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
MLE090
MLE091
3
3
10
10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
(1)
2
10
2
10
(2)
(3)
(1)
(2)
(3)
10
10
1
10
1
10
−1
2
3
−1
2
3
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 10.
(1) amb = 100 °C.
IC/IB = 20.
T
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
MLE092
MLE093
3
3
10
10
handbook, halfpage
handbook, halfpage
R
R
CEsat
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
(2)
1
1
(1)
(1)
(3)
(3)
(2)
−1
−1
10
10
−1
2
I
3
−1
2
I
3
10
1
10
10
10
10
1
10
10
10
(mA)
(mA)
C
C
IC/IB = 10.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.9 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2004 Aug 10
5
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
MLE094
MLE095
1.4
1.4
handbook, halfpage
handbook, halfpage
V
V
BEsat
BEsat
(V)
(V)
1
1
(1)
(1)
(2)
(3)
(2)
0.6
(3)
0.6
0.2
0.2
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 10.
(1) amb = −55 °C.
IC/IB = 20.
T
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
function of collector current; typical values.
MLE096
MLE097
1.2
1.2
handbook, halfpage
handbook, halfpage
V
V
BE
BE
(V)
(V)
(1)
(2)
(3)
(1)
(2)
(3)
0.8
0.8
0.4
0.4
0
10
0
10
−1
2
3
−1
2
3
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 1 V.
VCE = 2 V.
(1)
Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.12 Base-emitter voltage as a function of
collector current; typical values.
Fig.13 Base-emitter voltage as a function of
collector current; typical values.
2004 Aug 10
6
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-02-28
04-06-28
SOT54
TO-92
SC-43A
2004 Aug 10
7
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Aug 10
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
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Printed in The Netherlands
R75/02/pp9
Date of release: 2004 Aug 10
Document order number: 9397 750 13685
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