RB521CS30L,315 [NXP]
RB521CS30L - 100 mA low V_F MEGA Schottky barrier rectifier DFN 2-Pin;型号: | RB521CS30L,315 |
厂家: | NXP |
描述: | RB521CS30L - 100 mA low V_F MEGA Schottky barrier rectifier DFN 2-Pin PC 功效 测试 二极管 |
文件: | 总13页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 100 mA
Reverse voltage: VR ≤ 30 V
Low forward voltage: VF ≤ 350 mV
Low reverse current: IR ≤ 10 μA
AEC-Q101 qualified
Leadless ultra small SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
average forward current
square wave;
δ = 0.5; f = 20 kHz
[1]
[2]
Tamb ≤ 135 °C
Tsp ≤ 145 °C
VR = 10 V
-
-
-
-
-
-
100
100
10
mA
mA
μA
V
-
IR
reverse current
reverse voltage
forward voltage
2
VR
VF
-
30
IF = 10 mA
280
350
mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
1
2
2
anode
1
2
sym001
Transparent
top view
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
RB521CS30L
leadless ultra small plastic package; 2 terminal;
SOD882
body 1.0 × 0.6 × 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
RB521CS30L
Marking code
AR
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
average forward current
-
30
V
IF(AV)
square wave; δ = 0.5;
f = 20 kHz
[1]
[2]
Tamb ≤ 135 °C
Tsp ≤ 145 °C
-
-
-
100
100
3
mA
mA
A
IFSM
non-repetitive peak forward half sine wave;
current tp ≤ 8.3 ms
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
2 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
315
Unit
mW
mW
°C
[4][3]
[4][1]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
565
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
395
220
70
K/W
K/W
K/W
[4]
[5]
Rth(j-sp)
thermal resistance from
junction to solder point
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Soldering point of cathode tab.
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
3 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
006aac500
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac501
3
10
Z
th(j-a)
duty cycle =
1
(K/W)
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0
0.05
10
0.02
0.01
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
4 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
-
-
-
-
-
-
145
210
280
405
2
-
mV
mV
mV
mV
μA
-
IF = 10 mA
350
IF = 100 mA
VR = 10 V
-
IR
reverse current
10
-
Cd
diode capacitance
VR = 1 V; f = 1 MHz
8
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
006aac502
006aac503
−2
1
10
R
I
I
(A)
F
(1)
(2)
−3
−4
−5
−6
−7
−8
−9
10
(A)
−1
10
(1)
(2)
10
10
10
10
10
10
(3) (4) (5)
(3)
(4)
−2
−3
−4
10
10
10
0.0
0.2
0.4
0.6
0.8
0
10
20
30
V
F
(V)
V (V)
R
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 3. Forward current as a function of forward
voltage; typical values
Fig 4. Reverse current as a function of reverse
voltage; typical values
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
5 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
006aac504
15
C
d
(pF)
10
5
0
0
10
20
30
V
R
(V)
f = 1 MHz; Tamb = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
006aac505
006aac506
0.06
0.10
(4)
P
R(AV)
(W)
P
F(AV)
(W)
(3)
0.08
0.06
0.04
0.02
0.00
(2)
0.04
0.02
0.00
(1)
(1)
(2)
(3)
(4)
0.00
0.05
0.10
0.15
0
10
20
30
I
(A)
V (V)
R
F(AV)
Tj = 150 °C
Tj = 125 °C
(1) δ = 1; DC
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(2) δ = 0.9; f = 20 kHz
(3) δ = 0.8; f = 20 kHz
(4) δ = 0.5; f = 20 kHz
Fig 6. Average forward power dissipation as a
function of average forward current; typical
values
Fig 7. Average reverse power dissipation as a
function of reverse voltage; typical values
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
6 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
006aac507
006aac508
0.15
0.15
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
0.10
0.05
0.00
0.10
(3)
(4)
(3)
(4)
0.05
0.00
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
amb
175
T
amb
FR4 PCB, standard footprint
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
ambient temperature; typical values
Fig 9. Average forward current as a function of
ambient temperature; typical values
006aac509
0.15
(1)
I
F(AV)
(A)
(2)
0.10
0.05
0.00
(3)
(4)
0
25
50
75
100
125
150
(°C)
175
T
sp
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of solder point temperature; typical values
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
7 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 11. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM
× δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.50
0.46
0.62
0.55
2
1
0.30
0.22
1.02
0.95
0.65
0.30
0.22
0.55
0.47
cathode marking on top side
Dimensions in mm
03-04-17
Fig 12. Package outline SOD882
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
8 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing
quantity
10000
RB521CS30L
SOD882
2 mm pitch, 8 mm tape and reel
-315
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
1.3
0.7
R0.05 (8×)
solder lands
solder resist
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
sod882_fr
(2×)
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint SOD882
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
9 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
RB521CS30L v.1
20110124
Product data sheet
-
-
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
10 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
11 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
RB521CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
12 of 13
RB521CS30L
NXP Semiconductors
100 mA low VF MEGA Schottky barrier rectifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 January 2011
Document identifier: RB521CS30L
相关型号:
RB521ES-30T15R
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, SMD0603, DSN0603-2, 2 PIN
ROHM
RB521G-30-TP
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
RB521G-30-TP-HF
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明