RB521G-30G [SEMTECH]
Silicon Epitaxial Planar Schottky Barrier Diode; 硅外延平面肖特基势垒二极管型号: | RB521G-30G |
厂家: | SEMTECH CORPORATION |
描述: | Silicon Epitaxial Planar Schottky Barrier Diode |
文件: | 总2页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB521G-30G
Silicon Epitaxial Planar Schottky Barrier Diode
for rectifying small power application
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
E
Top View
Marking Code: "E"
Simplified outline SOD-723 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
IO
30
V
mA
A
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
100
IFSM
Tj
1
O
C
125
O
C
Storage Temperature Range
Tstg
- 40 to + 125
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
0.35
Unit
V
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 10 V
IR
10
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 28/07/2010 Rev:01
RB521G-30G
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-723
0.2±0.05
1.4±0.1
1±0.1
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 28/07/2010 Rev:01
相关型号:
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