RB521G-30 [SEMTECH]
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE; 硅外延平面肖特基势垒二极管
| 型号： | RB521G-30 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
E
Top View
Marking Code: "E"
Simplified outline SOD-523 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
IO
30
V
mA
A
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
100
IFSM
Tj
1
O
C
125
O
C
Storage Temperature Range
Ts
- 40 to + 125
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
0.35
Unit
V
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 10 V
IR
10
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
RB521G-30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
∠
ALL ROUND
HE
D
A
V
bp
C
D
E
HE
UNIT
mm
A
∠
O
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
0.70
0.60
1.7
1.5
0.1
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
相关型号：
RB521G-30-TP
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
RB521G-30-TP-HF
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明