SA5211 [NXP]
Transimpedance amplifier 180MHz; 跨阻放大器的180MHz
| 型号： | SA5211 |
| 厂家： | 
NXP |
| 描述： | Transimpedance amplifier 180MHz |
| 文件： | 总20页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5211
Transimpedance amplifier (180MHz)
Product specification
1998 Oct 07
Replaces datasheet NE/SA5211 of 1995 Apr 26
IC19 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
DESCRIPTION
PIN CONFIGURATION
The SA5211 is a 28kΩ transimpedance, wide-band, low noise
amplifier with differential outputs, particularly suitable for signal
recovery in fiber optic receivers. The part is ideally suited for many
other RF applications as a general purpose gain block.
D Package
1
2
3
4
5
6
7
14 OUT (–)
GND
GND
2
2
13
12
11
10
9
GND
2
NC
OUT (+)
FEATURES
Ǹ
GND
1
1.8pA ń Hz
• Extremely low noise:
I
IN
NC
GND
1
• Single 5V supply
V
V
• Large bandwidth: 180MHz
• Differential outputs
GND
1
CC1
CC2
8
GND
1
• Low input/output impedances
• High power supply rejection ratio
• 28kΩ differential transresistance
TOP VIEW
SD00318
Figure 1. Pin Configuration
• Medical and scientific Instrumentation
APPLICATIONS
• Sensor preamplifiers
• Fiber optic receivers, analog and digital
• Single-ended to differential conversion
• Low noise RF amplifiers
• RF signal processing
• Current-to-voltage converters
• Wide-band gain block
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
SA5211D
DWG #
14-Pin Plastic Small Outline (SO) Package
-40 to +85°C
SOT108-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
6
UNIT
V
V
CC
Power supply
T
Operating ambient temperature range
Operating junction temperature range
-40 to +85
°C
A
T
-55 to +150
°C
J
T
STG
Storage temperature range
-65 to +150
°C
1
P
Power dissipation, T =25°C (still-air)
1.0
5
W
D MAX
IN MAX
A
2
I
Maximum input current
mA
°C/W
θ
Thermal resistance
125
JA
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
=125°C/W
θ
JA
2. The use of a pull-up resistor to V , for the PIN diode is recommended.
CC
2
1998 Oct 07
853-1799 20142
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNIT
V
V
CC
Supply voltage
T
A
Ambient temperature range
Junction temperature range
°C
T
J
°C
DC ELECTRICAL CHARACTERISTICS
Min and Max limits apply over operating temperature range at V =5V, unless otherwise specified. Typical data apply at V =5V and T =25°C.
CC
CC
A
SYMBOL
PARAMETER
Input bias voltage
TEST CONDITIONS
Min
0.55
2.7
Typ
0.8
3.4
0
Max
1.00
3.7
UNIT
V
V
V
V
IN
Output bias voltage
Output offset voltage
Supply current
V
±
O
130
31
mV
mA
mA
OS
I
I
20
3
26
4
CC
1
Output sink/source current
OMAX
IN
Input current
(2% linearity)
Test Circuit 8,
Procedure 2
I
I
±20
±30
±40
±60
µA
µA
Maximum input current
overload threshold
Test Circuit 8,
Procedure 4
IN MAX
NOTES:
1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.
3
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at V =5V and T =25°C
CC
A
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
28
Max
UNIT
kΩ
DC tested R = ∞
L
R
Transresistance (differential output)
Output resistance (differential output)
Transresistance (single-ended output)
Output resistance (single-ended output)
Bandwidth (-3dB)
21
36
T
O
Test Circuit 8, Procedure 1
R
R
R
DC tested
30
Ω
DC tested
R = ∞
L
10.5
14
18.0
kΩ
T
DC tested
15
Ω
O
T = 25°C
A
f
180
MHz
3dB
Test circuit 1
R
C
Input resistance
200
4
Ω
IN
IN
Input capacitance
pF
∆R/∆V
∆R/∆T
Transresistance power supply sensitivity
V
= 5±0.5V
3.7
%/V
%/°C
CC
Transresistance ambient temperature sensitivity
∆T = T
A
-T
0.025
A MAX A MIN
Test Circuit 2
f = 10MHz
T = 25°C
A
RMS noise current spectral density (referred to
input)
I
1.8
pA/√Hz
N
T
T = 25°C
A
Integrated RMS noise current over the bandwidth
(referred to input)
I
Test Circuit 2
∆f = 50MHz
∆f = 100MHz
∆f = 200MHz
∆f = 50MHz
∆f = 100MHz
∆f = 200MHz
13
20
35
13
21
41
1
C =0
S
nA
nA
C =1pF
S
DC tested, ∆V = 0.1V
CC
2
2
Power supply rejection ratio
PSRR
PSRR
Equivalent AC
Test Circuit 3
23
23
45
32
32
65
dB
dB
(V
CC1
= V
)
CC2
DC tested, ∆V = 0.1V
CC
Power supply rejection ratio (V
)
)
Equivalent AC
Test Circuit 4
CC1
CC2
DC tested, ∆V = 0.1V
CC
2
PSRR
PSRR
Power supply rejection ratio (V
Equivalent AC
Test Circuit 5
dB
dB
f = 0.1MHz
Test Circuit 6
2
Power supply rejection ratio (ECL configuration)
23
R = ∞
Test Circuit 8, Procedure 3
L
V
V
Maximum differential output voltage swing
1.7
3.2
V
P-P
OMAX
Maximum input amplitude for output duty cycle of
Test Circuit 7
160
mV
P-P
IN MAX
3
50±5%
4
t
R
Rise time for 50mV output signal
Test Circuit 7
0.8
1.8
ns
NOTES:
1. Package parasitic capacitance amounts to about 0.2pF
2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V lines.
CC
3. Guaranteed by linearity and overload tests.
4. t defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.
R
4
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS
SINGLE-ENDED
DIFFERENTIAL
NETWORK ANALYZER
V
V
OUT
OUT
R
R
[
R
+
2 @ S21 @ R
R
+
T
R + 4 @ S21 @ R
T
V
V
IN
IN
S-PARAMETER TEST SET
1
1
)
*
S22
S22
1 ) S22
Ť
Ť *
Ť
Ť *
[ Z
33
R
+
2Z
O
1
66
O
O
O
* S22
PORT 1
PORT 2
5V
V
V
CC2
CC1
0.1µF
0.1µF
Z
= 50
= 50
33
O
OUT
OUT
0.1µF
R = 1k
Z
= 50
O
IN DUT
33
R
50
L
GND
GND
1
2
Test Circuit 1
SPECTRUM ANALYZER
5V
A
= 60DB
V
V
V
CC2
CC1
0.1µF
0.1µF
Z
= 50
= 50
O
33
OUT
OUT
IN DUT
NC
33
R
L
GND
GND
1
2
Test Circuit 2
SD00319
Figure 2. Test Circuits 1 and 2
5
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V
S-PARAMETER TEST SET
10µF
10µF
0.1µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
0.1µF
16
CAL
V
V
CC1
CC2
0.1µF
0.1µF
33
33
OUT
50
TEST
100
BAL.
IN
TRANSFORMER
NH0300HB
UNBAL.
OUT
GND
GND
2
1
Test Circuit 3
NETWORK ANALYZER
5V
S-PARAMETER TEST SET
10µF
0.1µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
10µF
0.1µF
16
CAL
5V
V
V
CC2
CC1
0.1µF
0.1µF
33
33
OUT
50
0.1µF
IN
TEST
100
BAL.
TRANSFORMER
NH0300HB
UNBAL.
OUT
GND
GND
2
1
Test Circuit 4
SD00320
Figure 3. Test Circuits 3 and 4
6
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V
S-PARAMETER TEST SET
10µF
0.1µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
10µF
0.1µF
16
CAL
5V
V
V
CC1
CC2
0.1µF
0.1µF
33
33
OUT
50
0.1µF
IN
TEST
100
BAL.
TRANSFORMER
NH0300HB
UNBAL.
OUT
GND
GND
2
1
Test Circuit 5
NETWORK ANALYZER
S-PARAMETER TEST SET
GND
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
0.1µF
16
CAL
GND
GND
1
2
0.1µF
0.1µF
33
33
OUT
50
TEST
100
BAL.
IN
TRANSFORMER
NH0300HB
UNBAL.
OUT
V
V
CC1
CC2
5.2V
10µF
0.1µF
Test Circuit 6
SD00321
Figure 4. Test Circuits 5 and 6
7
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
PULSE GEN.
V
V
CC2
CC1
0.1µF
0.1µF
33
33
OUT
OUT
A
B
Z
= 50Ω
0.1µF
IN
O
1k
DUT
OSCILLOSCOPE
= 50Ω
Z
O
50
Measurement done using
differential wave forms
GND
GND
2
1
Test Circuit 7
SD00322
Figure 5. Test Circuit 7
8
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
Typical Differential Output Voltage
vs Current Input
5V
+
–
OUT +
V
(V)
OUT
IN
DUT
OUT –
I
(µA)
IN
GND
GND
2
1
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–100
–80
–60
–40
–20
0
20
40
60
80
100
CURRENT INPUT (µA)
NE5211 TEST CONDITIONS
Procedure 1
R
R
measured at 15µA
T
T
= (V
O1
– V )/(+15µA – (–15µA))
O2
Where: V
Measured at I = +15µA
O1
IN
V
Measured at I = –15µA
O2
IN
Procedure 2
Linearity = 1 – ABS((V
– V
OB
) / (V
O3
– V ))
O4
OA
Where: V
Measured at I = +30µA
O3
IN
V
Measured at I = –30µA
O4
IN
V
+ R @ () 30mA) ) V
OA
T
OB
V
+ R @ (* 30mA) ) V
OB
= V
T
OB
Procedure 3
Procedure 4
V
– V
OMAX
Where: V
O7
O8
Measured at I = +65µA
O7
IN
V
Measured at I = –65µA
O8
IN
I
Test Pass Conditions:
IN
V
– V
O5
> 20mV and V – V > 50mV
06 O5
O7
Where: V
Measured at I = +40µA
O5
IN
V
Measured at I = –400µA
O6
O7
O8
IN
V
Measured at I = +65µA
IN
V
Measured at I = –65µA
IN
SD00331
Test Circuit 8
Figure 6. Test Circuit 8
9
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS
NE5211 Supply Current
vs Temperature
NE5211 Output Bias Voltage
NE5211 Output Voltage
vs Temperature
vs Input Current
2.0
3.50
3.45
3.40
3.35
3.30
3.25
30
28
26
24
22
20
18
+125°C
–55°C
+85°C
V
= 5.0V
CC
5.5V
+25°C
PIN 14
PIN 12
5.0V
4.5V
0
–55°C
+25°C
+85°C
+125°C
–2.0
–100.0
–60–40 –20
0
20 40 60 80 100 120 140
–60–40 –20
0
20 40 60 80 100 120 140
0
+100.0
AMBIENT TEMPERATURE (°C)
INPUT CURRENT (µA)
AMBIENT TEMPERATURE (°C)
NE5211 Input Bias Voltage
vs Temperature
NE5211 Output Bias Voltage
vs Temperature
NE5211 Differential Output Voltage
vs Input Current
4.1
3.9
3.7
3.5
3.3
3.1
2.9
2.7
2.0
950
5.0V
5.5V
4.5V
PIN 14
5.5V
900
850
800
750
700
650
5.5V
5.0V
4.5V
0
4.5V
4.5V
5.0V
0
5.5V
–2.0
–100.0
+100.0
–60–40 –20
0
20 40 60 80 100 120 140
–60–40 –20
0
20 40 60 80 100 120 140
INPUT CURRENT (µA)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
NE5211 Output Voltage
vs Input Current
NE5211 Differential Output Swing
vs Temperature
NE5211 Output Offset Voltage
vs Temperature
40
4.0
3.8
+125°C
4.5
+125°C
+25°C
+85°C
+25°C
V
= V
OUT12
– V
OUT14
DC TESTED
OS
20
0
+85°C
–55°C
R
= ∞
L
3.6
–55°C
4.5V
5.0V
5.5V
5.5V
3.4
3.2
–20
–40
–60
–80
–100
–120
–140
5.0V
3.0
2.8
2.6
+125°C
+85°C
4.5V
2.4
2.2
+25°C
+100.0
–55°C
2.5
–100.0
0
–60–40 –20
0
20 40 60 80 100 120 140
–60–40 –20
0
20 40 60 80 100 120 140
INPUT CURRENT (µA)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
SD00332
Figure 7. Typical Performance Characteristics
10
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
NE5211 Differential Transresistance
vs Temperature
NE5211 Gain vs Frequency
NE5211 Gain vs Frequency
17
16
15
14
13
12
11
10
9
17
16
15
14
13
12
11
10
9
33
5.5V
5.5V
DC TESTED
= ∞
32
31
30
29
28
27
R
L
5.0V
5.0V
4.5V
PIN 14
= 25°C
PIN 12
T
R
T
R
= 25°C
= 50Ω
A
A
L
= 50Ω
4.5V
L
5.5V
8
0.1
8
0.1
5.0V
4.5V
1
10
100
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
NE5211 Typical
Bandwidth Distribution
(70 Parts from 3 Wafer Lots)
NE5211 Gain vs Frequency
NE5211 Gain vs Frequency
17
16
15
14
13
12
11
10
9
17
60
50
40
30
20
PIN 12
SINGLE-ENDED
–55°C
–55°C
V
T
= 5.0V
16
15
14
13
12
11
10
9
CC
= 25°C
A
R
= 50Ω
L
125°C
125°C
PIN 12
= 5V
PIN 14
V = 5V
CC
85°C
25°C
85°C
25°C
V
CC
10
0
8
0.1
8
0.1
1
10
100
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
143
155
167
179
191
203
FREQUENCY (MHz)
NE5211 Bandwidth
vs Temperature
NE5211 Gain and Phase
Shift vs Frequency
NE5211 Gain and Phase
Shift vs Frequency
17
16
15
14
13
12
11
10
9
17
16
15
14
13
12
11
10
9
120
220
PIN 12
SINGLE-ENDED
60
5.5V
200
180
160
140
120
100
R
= 50Ω
L
5.0V
4.5V
120
0
PIN 14
PIN 12
V
T
= 5V
–60
–120
CC
V
T
= 5V
270
= 25°C
CC
A
= 25°C
A
8
0.1
8
0.1
1
10
100
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
SD00333
Figure 8. Typical Performance Characteristics (cont.)
11
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
NE5211 Output Resistance
vs Temperature
NE5211 Output Resistance
vs Temperature
NE5211 Output Resistance
vs Temperature
18
17
16
15
14
13
18
17
16
15
14
13
19
18
17
16
15
14
V
= 5.0V
PIN 12
DC TESTED
PIN 14
DC TESTED
CC
DC TESTED
PIN 14
4.5V
5.0V
4.5V
PIN 12
5.0V
5.5V
5.5V
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
NE5211 Output Resistance
vs Frequency
NE5211 Output Resistance
vs Frequency
NE5211 Output Resistance
vs Frequency
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
PIN 12
V
= 5.0V
CC
V
= 5.0V
T
= 25°C
CC
A
+125°C
+85°C
PIN 12
PIN 14
4.5V
5.0V
+25°C
–55°C
5.5V
0
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
NE5211 Power Supply Rejection Ratio
vs Temperature
NE5211 Group Delay
vs Frequency
10
40
8
6
4
2
0
V
= V = 5.0V
CC2
CC1
∆V
38
36
34
32
30
28
= ±0.1V
CC
DC TESTED
OUTPUT REFERRED
0.1 20 40 60 80 100 120 140 160 180 200
FREQUENCY (MHz)
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
SD00335
Figure 9. Typical Performance Characteristics (cont.)
12
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Output Step Response
V
T
= 5V
CC
= 25°C
A
20mV/Div
0
2
4
6
8
10
(ns)
12
14
16
18
20
SD00334
Figure 10. Typical Performance Characteristics (cont.)
– Q are bonded to an external pin, V , in order to reduce
CC2
Q
THEORY OF OPERATION
11
12
the feedback to the input stage. The output impedance is about 17Ω
single-ended. For ease of performance evaluation, a 33Ω resistor is
used in series with each output to match to a 50Ω test system.
Transimpedance amplifiers have been widely used as the
preamplifier in fiber-optic receivers. The SA5211 is a wide bandwidth
(typically 180MHz) transimpedance amplifier designed primarily for
input currents requiring a large dynamic range, such as those
produced by a laser diode. The maximum input current before
output stage clipping occurs at typically 50µA. The SA5211 is a
bipolar transimpedance amplifier which is current driven at the input
and generates a differential voltage signal at the outputs. The
forward transfer function is therefore a ratio of the differential output
voltage to a given input current with the dimensions of ohms. The
main feature of this amplifier is a wideband, low-noise input stage
which is desensitized to photodiode capacitance variations. When
connected to a photodiode of a few picoFarads, the frequency
response will not be degraded significantly. Except for the input
stage, the entire signal path is differential to provide improved
power-supply rejection and ease of interface to ECL type circuitry. A
block diagram of the circuit is shown in Figure 11. The input stage
(A1) employs shunt-series feedback to stabilize the current gain of
the amplifier. The transresistance of the amplifier from the current
BANDWIDTH CALCULATIONS
The input stage, shown in Figure 13, employs shunt-series feedback
to stabilize the current gain of the amplifier. A simplified analysis can
determine the performance of the amplifier. The equivalent input
capacitance, C , in parallel with the source, I , is approximately
IN
S
7.5pF, assuming that C =0 where C is the external source
S
S
capacitance.
Since the input is driven by a current source the input must have a
low input resistance. The input resistance, R , is the ratio of the
IN
incremental input voltage, V , to the corresponding input current, I
IN
IN
and can be calculated as:
VIN
IIN
RF
14.4K
71
RIN
+
+
+
+ 203W
1 ) AVOL
source to the emitter of Q is approximately the value of the
3
More exact calculations would yield a higher value of 200Ω.
feedback resistor, R =14.4kΩ. The gain from the second stage (A2)
F
Thus C and R will form the dominant pole of the entire amplifier;
IN
IN
and emitter followers (A3 and A4) is about two. Therefore, the
differential transresistance of the entire amplifier, R is
T
1
f*3dB
+
2p RIN CIN
VOUT(diff)
RT
+
+ 2RF + 2(14.4K) + 28.8kW
Assuming typical values for R = 14.4kΩ, R = 200Ω, C = 4pF
IIN
F
IN
IN
1
The single-ended transresistance of the amplifier is typically 14.4kΩ.
f*3dB
+
+ 200MHz
2p 4pF 200W
The simplified schematic in Figure 12 shows how an input current is
converted to a differential output voltage. The amplifier has a
The operating point of Q1, Figure 12, has been optimized for the
lowest current noise without introducing a second dominant pole in
the pass-band. All poles associated with subsequent stages have
been kept at sufficiently high enough frequencies to yield an overall
single pole response. Although wider bandwidths have been
achieved by using a cascade input stage configuration, the present
solution has the advantage of a very uniform, highly desensitized
frequency response because the Miller effect dominates over the
external photodiode and stray capacitances. For example, assuming
single input for current which is referenced to Ground 1. An input
current from a laser diode, for example, will be converted into a
voltage by the feedback resistor R . The transistor Q1 provides most
F
of the open loop gain of the circuit, A
≈70. The emitter follower Q
2
VOL
minimizes loading on Q . The transistor Q , resistor R , and V
B1
1
4
7
provide level shifting and interface with the Q – Q differential
15
16
pair of the second stage which is biased with an internal reference,
. The differential outputs are derived from emitter followers Q
a source capacitance of 1pF, input stage voltage gain of 70, R
=
V
B2
–
11
IN
Q
which are biased by constant current sources. The collectors of
12
13
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
60Ω then the total input capacitance, C = 4 pF which will lead to
only a 12% bandwidth reduction.
Assuming a data rate of 400 Mbaud (Bandwidth, B=200MHz), the
noise parameter Z may be calculated as:
IN
1
IEQ
41 @ 10*9
Z +
+
+ 1281
(1.6 @ 10*19)(200 @ 106)
qB
NOISE
Most of the currently installed fiber-optic systems use non-coherent
transmission and detect incident optical power. Therefore, receiver
noise performance becomes very important. The input stage
achieves a low input referred noise current (spectral density) of
2.9pA/√Hz. The transresistance configuration assures that the
external high value bias resistors often required for photodiode
biasing will not contribute to the total noise system noise. The
where Z is the ratio of
noise output to the peak response to a
RMS
single hole-electron pair. Assuming 100% photodetector quantum
efficiency, half mark/half space digital transmission, 850nm
lightwave and using Gaussian approximation, the minimum required
-9
optical power to achieve 10 BER is:
hc
PavMIN + 12 B Z + 12 @ 2.3 @ 10*19
l
equivalent input
noise current is strongly determined by the
RMS
200 @ 106 (1281) + 719nW + * 31.5dBm
+ 1139nW + * 29.4dBm
quiescent current of Q , the feedback resistor R , and the
1
F
bandwidth; however, it is not dependent upon the internal
Miller-capacitance. The measured wideband noise was 41nA RMS
in a 200MHz bandwidth.
where h is Planck’s Constant, c is the speed of light, λ is the
wavelength. The minimum input current to the SA5211, at this input
power is:
DYNAMIC RANGE CALCULATIONS
The electrical dynamic range can be defined as the ratio of
maximum input current to the peak noise current:
Joule
@ q + I
sec
l
1
IavMIN + qP
@
avMIN hc
Joule
Electrical dynamic range, D , in a 200MHz bandwidth assuming
E
I
= 60µA and a wideband noise of I =41nA
for an
INMAX
EQ
RMS
707 @ 10*9 @ 1.6 @ 10*19
2.3 @ 10*19
external source capacitance of C = 1pF.
S
+
(Max. input current)
(Peak noise current)
DE
+
= 500nA
Choosing the maximum peak overload current of I
maximum mean optical power is:
=60µA, the
avMAX
(60 @ 10*6
)
DE(dB) + 20log
DE(dB) + 20log
Ǹ
( 2 41 10*9
)
hcIavMAX
2.3 @ 10*19
PavMAX
+
+
60 @ 10mA
1.6 @ 10*19
(60mA)
(58nA)
lq
+ 60dB
+ 86mW or * 10.6dBm (optical)
Thus the optical dynamic range, D is:
In order to calculate the optical dynamic range the incident optical
power must be considered.
O
For a given wavelength λ;
D
= P
- P
= -4.6 -(-29.4) = 24.8dB.
O
avMAX
avMIN
DO + PavMAX * PavMIN + * 31.5 * (* 10.6)
+ 20.8dB
hc
l
Energy of one Photon =
watt sec (Joule)
-34
Where h=Planck’s Constant = 6.6 × 10 Joule sec.
1. S.D. Personick, Optical Fiber Transmission Systems,
Plenum Press, NY, 1981, Chapter 3.
8
c = speed of light = 3 × 10 m/sec
c / λ = optical frequency
P
hs
No. of incident photons/sec=
where P=optical incident power
P
OUTPUT +
l
A3
hs
l
No. of generated electrons/sec =
h @
INPUT
A1
A2
where η = quantum efficiency
no. of generated electron hole paris
no. of incident photons
+
R
P
F
A4
hs
l
OUTPUT –
NI + h @
@ e Amps (Coulombsńsec.)
SD00327
-19
Figure 11. SA5211 – Block Diagram
where e = electron charge = 1.6 × 10 Coulombs
h@e
hs
Responsivity R =
Amp/watt
This represents the maximum limit attainable with the SA5211
operating at 200MHz bandwidth, with a half mark/half space digital
transmission at 850nm wavelength.
l
I + P @ R
14
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
V
CC1
R
V
CC2
R
R
R
13
1
3
12
Q
Q
Q
11
2
4
INPUT
+
Q
Q
12
3
Q
1
Q
Q
OUT–
OUT+
15
R
16
R
2
R
14
15
GND
1
R
+
7
PHOTODIODE
VB2
R
5
R
4
GND
2
SD00328
Figure 12. Transimpedance Amplifier
Pins 8–11, and Ground 2, Pins 1 and 2 on opposite ends of the
SO14 package. This ground-plane stripe also provides isolation
V
CC
I
C1
between the output return currents flowing to either V
or Ground
R3
CC2
R1
2 and the input photodiode currents to flowing to Ground 1. Without
this ground-plane stripe and with large lead inductances on the
board, the part may be unstable and oscillate near 800MHz. The
easiest way to realize that the part is not functioning normally is to
measure the DC voltages at the outputs. If they are not close to their
quiescent values of 3.3V (for a 5V supply), then the circuit may be
oscillating. Input pin layout necessitates that the photodiode be
physically very close to the input and Ground 1. Connecting Pins 3
and 5 to Ground 1 will tend to shield the input but it will also tend to
increase the capacitance on the input and slightly reduce the
bandwidth.
INPUT
Q2
I
B
I
Q3
IN
Q1
R2
I
V
F
EQ3
V
IN
R
F
R4
As with any high-frequency device, some precautions must be
observed in order to enjoy reliable performance. The first of these is
the use of a well-regulated power supply. The supply must be
capable of providing varying amounts of current without significantly
changing the voltage level. Proper supply bypassing requires that a
good quality 0.1µF high-frequency capacitor be inserted between
SD00329
Figure 13. Shunt-Series Input Stage
V
and V
, preferably a chip capacitor, as close to the package
CC2
CC1
APPLICATION INFORMATION
pins as possible. Also, the parallel combination of 0.1µF capacitors
with 10µF tantalum capacitors from each supply, V and V , to
Package parasitics, particularly ground lead inductances and
parasitic capacitances, can significantly degrade the frequency
response. Since the SA5211 has differential outputs which can feed
back signals to the input by parasitic package or board layout
capacitances, both peaking and attenuating type frequency
response shaping is possible. Constructing the board layout so that
Ground 1 and Ground 2 have very low impedance paths has
produced the best results. This was accomplished by adding a
ground-plane stripe underneath the device connecting Ground 1,
CC1
CC2
the ground plane should provide adequate decoupling. Some
applications may require an RF choke in series with the power
supply line. Separate analog and digital ground leads must be
maintained and printed circuit board ground plane should be
employed whenever possible.
Figure 14 depicts a 50Mb/s TTL fiber-optic receiver using the
BPF31, 850nm LED, the SA5211 and the SA5214 post amplifier.
15
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
+V
CC
GND
47µF
C1
C2
.01µF
L1
10µH
C5
R1
100
1.0µF
D1
LED
R2
220
C7
LED
C
GND
1
20
19
V
V
IN
8
9
7
6
CC
1B
1A
100pF
C9
C3
10µF
.01µF
C4
.01µF
2
PKDET
GND
GND
GND
IN
CC
NC
100pF
C8
THRESH
3
18
10
11
5
4
C
C
C6
AZP
GND
A
I
IN
4
5
17
16
0.1µF
AZN
BPF31
OPTICAL
INPUT
R3
47k
FLAG
JAM
NC
OUT
OUT
12
13
3
2
1B
L2
10µH
6
7
15
14
GND
GND
GND
OUT
IN
8B
V
CCD
OUT
14
1
1A
C11
C10
V
CCA
8
13
12
10µF
.01µF
IN
R
8A
GND
D
9
HYST
R
TTL
10
11
C12
10µF
PKDET
OUT
L3
10µH
C13
.01µF
R4
4k
V
(TTL)
OUT
NOTE:
The NE5210/NE5217 combination can operate at data rates in excess of 100Mb/s NRZ
The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC–50MHz band, but does create extra high frequency noise
on the NE5210 V pin(s).
CC
SD00330
Figure 14. A 50Mb/s Fiber Optic Receiver
16
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
1
14
OUT (–)
GND 2
2
13
GND 2
GND 2
12
3
OUT (+)
NC
GND 1
11
4
INPUT
NC
10
GND 1
5
GND 1
VCC1
9
6
ECN No.: 06027
1992 Mar 13
GND 1
7
8
VCC 2
SD00488
Figure 15. SA5211 Bonding Diagram
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
17
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
18
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
NOTES
19
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 10-98
Document order number:
9397 750 04624
Philips
Semiconductors
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