SA5222 [NXP]
Low-power FDDI transimpedance amplifier; 低功耗FDDI阻放大器
| 型号： | SA5222 |
| 厂家： | 
NXP |
| 描述： | Low-power FDDI transimpedance amplifier |
| 文件： | 总8页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
DESCRIPTION
PIN DESCRIPTION
The NE/SA5222 is a low-power, wide-band, low noise
transimpedance amplifier with differential outputs, optimized for
signal recovery in FDDI fiber optic receivers. The part is also suited
for many other RF and fiber optic applications as a general purpose
gain block.
D Package
V
V
1
2
3
4
8
7
6
5
CC1
CC2
OUT
OUT
GND
1
FEATURES
IN
Ǹ
2.0pAń Hz
• Extremely low noise:
GND
GND
2
1
• Single 5V supply
SD00360
• Low supply current: 9mA
• Large bandwidth: 165MHz
• Differential outputs
Figure 1. Pin Configuration
APPLICATIONS
• FDDI preamp
• Low output offset
• Current-to-voltage converters
• Wide-band gain block
• Low input/output impedances
• High power-supply-rejection ratio: 55dB
• Tight transresistance control
• High input overload: 115µA
• ESD protected
• Medical and scientific instrumentation
• Sensor preamplifiers
• Single-ended to differential conversion
• Low noise RF amplifiers
• RF signal processing
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
SA5222D
DWG #
-40 to +85°C
8-Pin Plastic Small Outline (SO) package
SOT96-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC1,2
Power supply voltage
6
V
T
Ambient temperature range
Junction temperature range
-40 to +85
-55 to +150
°C
°C
A
T
J
°C
W
T
Storage temperature range
-65 to +150
STG
o
1
P
Power dissipation T = 25 C (still air)
0.78
5
D
A
I
Maximum input current
mA
INMAX
NOTE:
o
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ = 158 C/W. Derate
JA
6.2mW/°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC1,2
Power supply voltage
4.5 to 5.5
V
°C
°C
T
Ambient temperature range: SA grade
Junction temperature range: SA grade
-40 to +85
A
T
-40 to +105
J
1
1995 Apr 26
853-1582 15170
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T = 25°C, and V
= V
= +5V, unless otherwise specified.
A
CC1
CC2
SA5222
Typ
SYMBOL
PARAMETER
Input bias voltage
TEST CONDITIONS
UNIT
Min
Max
V
V
1.3
1.55
1.8
3.5
V
IN
Output bias voltage
Output offset voltage
2.9
3.2
0
V
±
O
V
±100
12
mV
mA
mA
µA
µA
OS
CC
I
Supply current
6
9
2
I
Output sink/source current
1.5
±60
±80
OMAX
I
IN
Input current (2% linearity)
Test circuit 5, Procedure 2
Test circuit 5, Procedure 4
±90
±115
3.6
I
Maximum input current overload threshold
Maximum differential output voltage swing
INMAX
V
OMAX
R = ∞, Test Circuit 5, Procedure 3
V
P-P
L
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T = 25°C and V
= V
=+5V, unless otherwise specified.
A
CC1
CC2
SA5222
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Max
DC tested, R = ∞, Test Circuit 5,
L
R
T
Transresistance (differential output)
13.3
16.6
19.9
kΩ
Procedure 1
Output resistance
(differential output)
R
DC tested
30
60
8.3
30
90
9.95
45
Ω
kΩ
Ω
O
Transresistance
(single-ended output)
R
6.65
DC tested, R = ∞
T
L
Output resistance
(single-ended output)
R
DC tested
15
O
1
f
Bandwidth (-3dB)
Test Circuit 1
110
140
150
1
MHz
3dB
R
C
Input resistance
Ω
IN
IN
2
Input capacitance
pF
∆R/∆V
∆R/∆T
Transresistance power supply sensitivity
V
= V
= 5 ±0.5V
1.0
%/V
CC1
CC2
Transresistance ambient temperature sensi-
tivity
o
∆T = T
- T
A MIN
0.07
2.0
15
%/ C
A
A MAX
RMS noise current spectral density (referred
to input)
Ǹ
I
IN
Test Circuit 2, f = 10MHz
pAń Hz
Integrated RMS noise current over the band-
width (referred to input)
Test circuit 2,
∆f = 50MHz
C
= 0pF
∆f = 100MHz
∆f = 150MHz
∆f = 50MHz
∆f = 100MHz
∆f = 150MHz
25
36
17
35
55
S
I
T
nA
C
= 1pF
S
PSRR
PSRR
Power supply rejection ratio
DC Tested, ∆V = ±0.5V
–55
–34
dB
dB
CC
3
Power supply rejection ratio
f = 1.0MHz, Test Circuit 3
Maximum input amplitude for output duty
cycle of 50 ±5%
I
Test circuit 4
±120
µA
INMAX
4
t , t
Rise and fall times
Group delay
10 – 90%
f = 10MHz
2.2
2.2
ns
ns
r
f
t
D
NOTES:
1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz.
2. Does not include Miller-multiplied capacitance of input device.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V line.
CC
4. Monitored in production via linearity and over load tests.
2
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
TEST CIRCUITS
SINGLE-ENDED
DIFFERENTIAL
V
V
OUT
OUT
R
R
2
S
R
R
R
4
S
21
R
T
21
T
V
V
IN
IN
SPECTRUM ANALYZER
1 + S22
1 + S22
-20
-40
R
= Z
O
R
= 2Z
O
50Ω
O
O
1 - S22
1 - S22
NETWORK ANALYZER
V
CC
S-PARAMETER TEST SET
.1µF
20
10µF
10µF
PORT1
PORT2
OUT
Z
= 50Ω
V
Z
= 50Ω
NE5209
IN DUT
OUT
O
CC
O
.1µF
20
.1uF
.1uF
20
20
0.1uF
R=1k
GND
GND
GND
OUT
C
2
1
S
50Ω
IN DUT
OUT
GND
50
1
2
50
SD00361
SD00362
Test Circuit 1: Bandwidth
Figure 2. Test Circuit1
Test Circuit 2: Noise
Figure 3. Test Circuit2
TEST CIRCUITS (continued)
5V
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT2
PORT1
50Ω
TRANSFORMER
CONVERSION
LOSS = 9dB
CAL
0.1uF
V
CC
OUT
.1uF
20Ω
20Ω
NHO300HB
IN DUT
OUT
.1uF
NC
GND
50Ω
UNBAL.
GND
100Ω
BAL.
2
1
Test Circuit 3: PSRR
SD00363
Figure 4. Test Circuit4
3
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
TEST CIRCUITS (continued)
5V
PULSE GEN
.1µF
.1µF
1kΩ
1kΩ
OFFSET
0.1uF
OUT
OUT
A
Z
= 50Ω
O
DUT
IN
1
OSCILLOSCOPE
1kΩ
B
Z
= 50Ω
O
50Ω
GND
GND
2
Meaurement done using
differential wave forms
Test Circuit 4: Duty Cycle Distortion
Figure 5. Test Circuit4
SD00364
TEST CIRCUITS (continued)
5V
+
OUT +
OUT –
V
(VOLTS)
O
–
I
µ
IN ( A)
GND
GND
2
1
Typical V (Differential) vs I
O
IN
2.25
1.80
V
O
7
V
O
1.35
5
V
3
O
0.90
V
O1
0.45
V
O
0.00
S
V
O2
–0.45
–0.90
–1.35
–1.80
–2.25
V
O4
V
O6
V
O8
–200
–160
–120
–80
–40
0
40
80
120
160
200
CURRENT INPUT (µA)
SA5222 TEST CONDITIONS
Procedure 1
Procedure 3
Procedure 2
R
R
measured at 30µA
Linearity = 1 - ABS((V
- V
OA OB
/ (V - V ))
O3 O4
IN
IN
T
T
= (V
- V ) / (+30µA - (-30µA)
Where:
V
V
V
V
Measured at I = +60µA
O1 O2
O3
O4
OA
OB
Where:
V
Measure at I = +30µA
Measured at I = -60µA
O1
IN
IN
V
Measured at I = -30µA
= R x (+60µA) + V
O2
T
T
OS
OS
= R x (-60µA) + V
Procedure 4
V
= V
- V
I
Test Pass Conditions:
OMAX
O7 O8
INMAX
Where:
V
V
Measured at I = +130µA
V
- V
O7 O5
> 50mV and V
- V
< 50mV
O7
O8
IN
O6 O8
Measured at I = -130µA
Where:
V
V
V
V
Measured at I = +80µA
IN
O5
O6
O7
OB
IN
IN
IN
IN
Measured at I = -80µA
Measured at I = +130µA
Measured at I = -130µA
SD00365
Test Circuit 5: DC Tests
Figure 6. Test Circuit5
4
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
5
4
3
2
1
0
10
OUT
OUT
25°C
9
85°C
–40°C
8
7
6
T
= +25°C
A
V
= 5V
CC
4.5
5
5.5
SD00366
–200
–100
0
100
200
SD00548
SUPPLY VOLTAGE (V)
INPUT CURRENT (µA)
Figure 10. Differential Output Voltages vs. Input Current
Figure 7. I vs. V and Temperature
CC
CC
2.5
1.8
1.7
1.6
1.5
1.4
1.3
1.2
–40°C
1.5
0.5
25°C
85°C
–0.5
–1.5
–2.5
4.5V
5.5V
T
= +25°C
A
–200
–100
0
100
200
SD00549
4.5
5
5.5
INPUT CURRENT (µA)
SUPPLY VOLTAGE (V)
SD00546
Figure 11. Differential Output Voltage vs Input Current and V
CC
Figure 8. Input Voltage vs. V and Temperature
CC
2.5
3.8
3.6
1.5
85°C
3.4
–40°C
85°C
3.2
25°C
0.5
3
–40°C
2.8
–0.5
–1.5
2.6
2.4
2.2
V
= 5V
CC
PIN 6 OUTPUT
–2.5
2
–200
–100
0
100
200
SD00550
4.5
5
5.5
INPUT CURRENT (µA)
SUPPLY VOLTAGE (V)
SD00547
Figure 12. Diff. Output Voltage vs. Input Current and Temp.
Figure 9. Output Voltage vs. V and Temperature
CC
5
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
18
15
10
5
85°C
17
PIN 6
25°C
16
–40°C
15
14
PIN 7
0
13
V
T
= 5V
CC
= +25°C
∆Iin = ±20µA
A
12
–5
1
10
FREQUENCY (MHz)
100
300
SD00553
4.5
5
5.5
SD00367
SUPPLY VOLTAGE (V)
Figure 16. Insertion Gain vs. Frequency
Figure 13. Differential Transresistance vs. V and
CC
Temperature
15
50
5.5V
4.5V
–40°C
10
5
40
25°C
30
20
10
85°C
0
PIN 6 OUTPUT
T
= +25°C
A
–5
1
10
FREQUENCY (MHz)
100
300
0
SD00554
4.5
5
5.5
SUPPLY VOLTAGE (V)
SD00551
Figure 17. Insertion Gain vs. Frequency and V
CC
Figure 14. Output Resistance vs. V and Temperature
CC
15
50
+85°C
45
85°C
10
–40°C
40
35
25°C
30
25
20
5
0
15
PIN 6 OUTPUT
–40°C
+85°C
10
5
V
= 5V
CC
–5
1
10
FREQUENCY (MHz)
100
300
0
SD00555
4.5
5
5.5
SUPPLY VOLTAGE (V)
SD00552
Figure 18. Insertion Gain vs. Frequency and Temperature
Figure 15. Output Offset Voltage vs. V and Temperature
CC
6
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
200
50
45
40
35
30
25
20
15
10
5
PIN 7 OUTPUT
V
= 5V
CC
Ω
300 PARTS FROM
3 WAFERS
50 Load
= 25°C
100
T
A
0
PIN 6 OUTPUT
–100
V
= 5V
CC
= +25°C
T
A
0
–200
110
140
BANDWIDTH (MHz)
170
1
10
FREQUENCY (MHz)
100
300
SD00368
SD00558
Figure 22. –3dB Bandwidth Distribution
Figure 19. Phase vs. Frequency
8
DIFFERENTIAL OUTPUT
0.1µF COUPLING CAP’s
7
6
5
4
3
2
1
0
0
–20
PIN 6 OUTPUT
–4
0
V
= 5V
CC
= +25°C
V
T
= 5V
= +25°C
CC
A
T
A
–60
0.1
1
10
FREQUENCY (MHz)
100
300
1
10
FREQUENCY (MHz)
100
300
SD00556
SD00559
Figure 23. Power–Supply Rejection Ratio vs. Frequency
Figure 20. Group Delay vs. Frequency
8
115
95
75
55
35
15
–5
OUTPUT NOISE DIVIDED BY 10MHz GAIN
7
V
T
= 5V
= +25°C
CC
A
6
5
4
PIN 6
C
= 1pF
S
PIN 7
3
2
1
C
= 0pF
S
V
= 5V
CC
= +25°C
T
A
0
1
10
FREQUENCY (MHz)
100
300
SD00560
1
10
FREQUENCY (MHz)
100
300
SD00557
Figure 24. Input Noise Spectral Density vs. Frequency
Figure 21. Output Impedancevs. Frequency
7
1995 Apr 26
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
VCC2
VCC1
1
2
8
7
OUT
GND 1
OUT
6
5
3
4
IN
GND 2
GND 1
SD00505
Figure 25. SA5222 Bonding Diagram
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
8
1995 Apr 26
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