SA5223D-T [NXP]
IC SPECIALTY TELECOM CIRCUIT, PDSO8, 3.90 MM, PLASTIC, MS-012AA, SOT-96-1, SOP-8, Telecom IC:Other;
| 型号： | SA5223D-T |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, PDSO8, 3.90 MM, PLASTIC, MS-012AA, SOT-96-1, SOP-8, Telecom IC:Other 放大器 |
| 文件： | 总12页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5223
Wide dynamic range AGC
transimpedance amplifier (150MHz)
Product specification
IC19 Data Handbook
1995 Oct 24
Philips
Semiconductors
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
DESCRIPTION
PIN DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier
with differential outputs, incorporating AGC and optimized for signal
recovery in wide-dynamic-range fiber optic receivers, such as
SONET. The part is also suited for many other RF and fiber optic
applications as a general purpose gain block.
D Package
GND
3
V
1
2
3
4
8
7
6
5
CC
OUT
OUT
GND
1
The SA5223 is the first AGC amplifier to incorporate internal AGC
loop hold capacitor, therefore, no external components are required.
The internal AGC loop enables the SA5223 to effortlessly handle
bursty data over a range of nA to mA of signal current, positive
direction (sinking) only.
IN
GND
4
GND
2
SD00369
FEATURES
Ǹ
1.17pAHz
• Extremely low noise:
APPLICATIONS
• OC3 SONET preamp (see AN1431 for detailed analysis
• Current-to-voltage converters
• Wide-band gain block
• Single 5V supply
• Low supply current: 22mA
• Large bandwidth: 150MHz
• Differential outputs
• Medical and scientific instrumentation
• Sensor preamplifiers
• Internal hold capacitor
• Single-ended to differential conversion
• Low noise RF amplifiers
• Low input/output impedances
• High power-supply-rejection ratio: 55dB
• Tight transresistance control
• High input overload: 4mA
• 2000V HBM ESD protection
• RF signal processing
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
-40 to +85°C
8-Pin Plastic Small Outline
SA5223D
SOT96-1
For unpackaged die please contact factory.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
6
UNITS
V
CC
Power supply voltage
V
T
Ambient temperature range
Junction temperature range
-40 to +85
°C
°C
A
T
-55 to +150
J
°C
W
T
Storage temperature range
-65 to +150
STG
o
1
P
Power dissipation T = 25 C (still air)
0.78
5
D
A
I
Maximum input current
mA
INMAX
NOTE:
o
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ = 158 C/W. Derate
JA
6.2mW/°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Power supply voltage
4.5 to 5.5
V
°C
°C
T
Ambient temperature range: SA grade
Junction temperature range: SA grade
-40 to +85
A
T
-40 to +105
J
2
1995 Oct 24
853-1816 15939
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T = 25°C, and V = +5V, unless otherwise specified.
A
CC
SA5223
SYMBOL
PARAMETER
Input bias voltage
TEST CONDITIONS
UNIT
Max
Min
1.3
2.9
-200
15
Typ
1.55
3.2
80
V
V
1.8
3.5
V
IN
Output bias voltage
Output offset voltage (V
Supply current
V
±
O
V
- V
)
+200
29
mV
mA
mA
OS
CC
PIN6
PIN7
I
22
I
Output sink/source current
1.5
2
OMAX
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T = 25°C and V = +5V, unless otherwise specified.
A
CC
SA5223
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Max
R
Transresistance (differential output)
90
125
160
kΩ
kΩ
DC tested, R = ∞, I = 0-1µA
T
L
IN
Transresistance
(single-ended output)
R
T
45
62.5
140
70
80
DC tested, R = ∞, I = 0-1µA
L
IN
Output resistance
(differential output)
R
R
DC tested
Ω
Ω
O
O
Output resistance
(single-ended output)
DC tested
f
Bandwidth (-3dB)
Input resistance
Test Circuit 1
DC tested
110
150
250
0.7
MHz
Ω
3dB
R
IN
1
C
Input capacitance
pF
IN
Input capacitance including Miller multiplied
capacitance
C
4.0
3
pF
INT
∆R/∆V
Transresistance power supply sensitivity
V
CC1
= V
= 5 ±0.5V
CC2
%/V
Transresistance ambient temperature sensi-
tivity
o
∆R/∆T
∆T = T
- T
A MIN
0.09
%/ C
A
A MAX
RMS noise current spectral density (referred
to input)
Ǹ
I
Test Circuit 2, f = 10MHz
1.17
7
IN
pAń Hz
2
Test circuit 2,
∆f = 50MHz
Integrated RMS noise current over the band-
width (referred to input)
∆f = 100MHz
∆f = 150MHz
∆f = 50MHz
∆f = 100MHz
∆f = 150MHz
12
16
S
I
nA
T
8
C
= 0.4pF
13
S
18
PSRR
PSRR
Power supply rejection ratio (change in V
)
DC Tested, ∆V = ±0.5V
–55
–20
800
dB
dB
OS
CC
3
Power supply rejection ratio
f = 1.0MHz, Test Circuit 3
V
Maximum differential output AC voltage
I = 0–2mA peak AC
i
mV
OLMAX
dRT
dt
4
AGC loop time constant parameter
10µA to 20µA steps
1
dB/ms
mA
Maximum input amplitude for output duty
cycle of 50 ±5%
I
Test circuit 4
+2
INMAX
t , t
Output rise and fall times
Group delay
10 – 90%
f = 10MHz
2.2
2.2
ns
ns
r
f
t
D
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V line.
CC
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
3
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
TEST CIRCUITS
SINGLE-ENDED
R
+ 12.4 @ S
@ R
,
R + 1k ) R
IN
[ 1250W
INSS
21
IN
TSE
SPECTRUM ANALYZER
50Ω
NETWORK ANALYZER
V
CC
S-PARAMETER TEST SET
PORT2
.1µF
1.0µF
PORT1
OUT
Z
= 50Ω
V
Z
= 50Ω
O
O
CC
NE5209
IN DUT
OUT
.1µF
.1uF
500
500
0.1uF
R=1k
GND
1.0µF
50Ω
OUT
GND
GND
C
2
1
S
IN DUT
OUT
.1uF
GND
50
1
2
50
Test Circuit 2: Noise
SD00370
Test Circuit 1: Bandwidth
SD00371
5V
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT2
PORT1
50Ω
TRANSFORMER
CONVERSION
LOSS = 9dB
CAL
0.1uF
V
CC
OUT
.1uF
NHO300HB
IN DUT
OUT
.1uF
NC
GND
50Ω
UNBAL.
100Ω
BAL.
GND
2
1
SD00372
Test Circuit 3: PSRR
5V
50% DUTY CYCLE
PULSE GEN
.1µF
500Ω
OFFSET
0.1uF
OUT
DUT
A
Z
= 50Ω
O
IN
OSCILLOSCOPE
1kΩ
.1µF
500Ω
OUT
B
Z
= 50Ω
O
50Ω
GND
GND
2
1
Meaurement done using
differential wave forms
Test Circuit 4: Duty Cycle Distortion
SD00373
4
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
V
CC
GND
8
1
PAD CENTER LOCATIONS
X(mm)
Y(mm)
NC NC
G1
7
OUT
OUTB
G2
2
GND1
IN
GND2
OUT
OUTB
-0.400
-0.400
+0.400
+0.400
+0.400
+0.400
-0.053
-0.223
-0.342
-0.046
+0.154
+0.380
V
CC
IN
3
DIE SIZE
X(mm)
6
NC
Y(mm)
1.32
1.08
5
GND
4
SD00507
Figure 1. SA5223 Bonding Diagram
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
5
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
SD00521
Figure 2. SONET Test Board — 155Mb/s (1300nm)
6
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
L 2
C 4
C 9
C 8
C 3
R 2
C 1
R 1
C 2
R 1 2
D o u t
D o u t
R 5
R 8
R 7
R 6
C 1 2
1
C 1
R 9
D 1
R 1 0
TOP VIEW
BOTTOM VIEW
SD00522
Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE)
7
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
28.00
26.00
24.00
22.00
20.00
18.00
16.00
100
90
80
70
60
50
40
V
R
= (I = 0) = V
= INFINITY
– V
OUT OUT
IN
OS
L
V
= 5.5V
CC
V
= 5.0V
CC
V
= 5.5V
= 5.0V
CC
V
CC
V
= 4.5V
CC
V
= 4.5V
CC
-50
-25
0
25
50
75
100
SD00530
-50
-25
0
25
50
75
100
SD00527
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 4. SA5223 I vs Temperature
Figure 7. SA5223 Output V vs Temperature
OS
CC
3.500
3.400
3.300
3.200
3.100
3.000
2.900
1.900
1.800
1.700
1.600
1.500
1.400
1.300
1.200
V
OUT
V
V
V
= 5.5V
= 5.0V
= 4.5V
CC
CC
CC
R
= INFINITY
L
V
= 5.0V, Temperature = 25°C
CC
V
OUT
10
8
9
0
1
2
3
4
5
6
7
DC INPUT CURRENT (µA)
-50
-25
0
25
50
75
100
SD00528
SD00531
TEMPERATURE (°C)
Figure 8. SA5223 Output Voltage vs DC Input Current
(for small input current)
Figure 5. SA5223 Input V
vs Temperature
BIAS
4.200
4.000
3.800
R
= INFINITY
= 5.0V, Temperature = 25°C
L
V
3.600
3.400
3.200
3.000
2.800
2.600
CC
V
= 5.5V
3.800
3.600
3.400
3.200
3.000
2.800
2.600
2.400
2.200
2.000
CC
V
OUT
V
V
= 5.0V
= 4.5V
CC
CC
V
OUT
-50
-25
0
25
50
75
100
SD00529
1
10
100
1000
10000
SD00532
TEMPERATURE (°C)
DC INPUT CURRENT (µA LOG)
Figure 6. SA5223 Output V
vs Temperature
Figure 9. SA5223 Output Voltage vs DC Input Current
(for large input current)
BIAS
8
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
0.350
1000
85°C
R
CC
= INFINITY
L
0.300
V
= 5.0V
25°C
Temperature = -40, 25, 85°C
100
0.250
RT = V
/ I
OD IN
R
= INFINITY
= 5.0V, Temperature = 25°C
L
-40°C
0.200
0.150
0.100
0.050
0.000
V
V
CC
OD
= V
– V
– V
OS
10
1
OUT
OUT
0
1
10
100
DC INPUT CURRENT (µA LOG)
1000
10000
8
9
10
0
1
2
3
4
5
6
7
DC INPUT CURRENT (µA)
SD00533
SD00536
Figure 10. SA5223 Differential Output vs DC I
(for small input current)
Figure 13. SA5223 Differential RT vs DC I
(for large input current)
IN
IN
160
140
120
R
= INFINITY
= 5.0V
L
V
1.800
1.600
1.400
1.200
1.000
0.800
0.600
0.400
0.200
0.000
CC
Temperature = 25°C
RT = V
/ I
OD IN
R
V
= INFINITY
V
= 5.5V
CC
L
= 5.0V, Temperature = 25°C
100
80
CC
OD
V
= V
– V
– V
OUT OS
V
= 5.0V
OUT
CC
V
= 4.5V
CC
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
DC INPUT CURRENT (µA)
1
10
100
1000
10000
SD00534
SD00537
DC INPUT CURRENT (µA, LOG)
Figure 14. SA5223 Differential RT vs DC I
(for small input current)
IN
Figure 11. SA5223 Differential Output vs DC I
IN
1000
100
10
1
160
140
120
85°C
R
V
= INFINITY
= 5.0V
L
CC
R
CC
= INFINITY
L
Temperature = -40, 25, 85°C
V
= 4.5, 5.0, 5.0V
RT = V
/ I
OD IN
Temperature = 25°C
RT = V
25°C
/ I
OD IN
-40°C
100
80
25°C
85°C
60
40
20
0
-40°C
0
1
10
100
DC INPUT CURRENT (µA LOG)
1000
10000
0
1
2
3
4
5
6
7
8
9
10
SD00538
DC INPUT CURRENT (µA)
SD00535
Figure 15. SA5223 Differential RT vs DC I
(for large input current)
IN
Figure 12. SA5223 Differential RT vs DC I
(for small input current)
IN
9
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
9
8
16
14
12
10
8
V
= 5.0V
CC
SINGLE-ENDED OUTPUT
7
6
SINGLE-ENDED OUTPUT
TEMPERATURE = 25°C
VCC = 5.0V
5
6
4
4
3
-40°C
2
2
0°C
25°C
0
1
70°C
85°C
-2
0
-4
1
-1
10
100
300
SD00539
START = 1MHz
STOP = 200MHz
FREQUENCY (MHz)
FREQUENCY (MHz, LINEAR)
SD00541
Figure 16. Insertion Gain vs Frequency
Figure 18. Group Delay vs Frequency
16
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
TEMPERATURE = 25°C
14
12
10
8
SINGLE-ENDED OUTPUT
V
= 5.0V
CC
Temperature = 25°C
C
= 0pF
S
6
4
2
V
V
V
= 5.5V
= 5.0V
= 4.5V
CC
CC
CC
0
-2
-4
1
10
100
300
1
10
100
300
SD00540
FREQUENCY (MHz)
SD00542
FREQUENCY (MHz)
Figure 19. SA5223 Input Current RMS Noise Spectral Density
Figure 17. Insertion Gain vs Frequency
10
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SA5223
SO8: plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
11
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SA5223
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 08-98
Document order number:
9397 750 06831
Philips
Semiconductors
相关型号：
SA5230D-T
IC OP-AMP, 4000 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8, PLASTIC, SO-8, Operational Amplifier
NXP
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