SA572D-T [NXP]

IC SPECIALTY ANALOG CIRCUIT, PDSO16, Analog IC:Other;
SA572D-T
型号: SA572D-T
厂家: NXP    NXP
描述:

IC SPECIALTY ANALOG CIRCUIT, PDSO16, Analog IC:Other

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INTEGRATED CIRCUITS  
SA572  
Programmable analog compandor  
Product specification  
IC17 Data Handbook  
1998 Nov 03  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
DESCRIPTION  
PIN CONFIGURATION  
The SA572 is a dual-channel, high-performance gain control circuit  
in which either channel may be used for dynamic range  
compression or expansion. Each channel has a full-wave rectifier to  
detect the average value of input signal, a linearized,  
temperature-compensated variable gain cell (G) and a dynamic  
time constant buffer. The buffer permits independent control of  
dynamic attack and recovery time with minimum external  
components and improved low frequency gain control ripple  
distortion over previous compandors.  
1
D , N, Packages  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
TRACK TRIM A  
CC  
TRACK TRIM B  
RECOV. CAP A  
RECT. IN A  
RECOV. CAP B  
RECT. IN B  
ATTACK CAP A  
G OUT A  
ATTACK CAP B  
G OUT B  
THD TRIM A  
The SA572 is intended for noise reduction in high-performance  
audio systems. It can also be used in a wide range of  
communication systems and video recording applications.  
G IN A  
THD TRIM B  
G IN B  
GND  
NOTE:  
1. D package released in large SO (SOL) package only.  
FEATURES  
SR00694  
Independent control of attack and recovery time  
Figure 1. Pin Configuration  
Improved low frequency gain control ripple  
Complementary gain compression and expansion with  
external op amp  
APPLICATIONS  
Wide dynamic range—greater than 110dB  
Temperature-compensated gain control  
Low distortion gain cell  
Dynamic noise reduction system  
Voltage control amplifier  
Stereo expandor  
Low noise—6µV typical  
Automatic level control  
High-level limiter  
Wide supply voltage range—6V-22V  
System level adjustable with external components  
Low-level noise gate  
State variable filter  
ORDERING INFORMATION  
DESCRIPTION  
TEMPERATURE RANGE  
–40 to +85°C  
ORDER CODE  
SA572D  
DWG #  
SOT162-1  
SOT38-4  
16-Pin Plastic Small Outline (SOL)  
16-Pin Plastic Dual In-Line Package (DIP)  
–40 to +85°C  
SA572N  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
UNIT  
V
CC  
Supply voltage  
22  
V
DC  
Operating temperature range  
SA572  
T
A
–40 to +85  
500  
°C  
P
Power dissipation  
mW  
D
2
1998 Nov 03  
853-0813 20294  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
BLOCK DIAGRAM  
R1  
(5,11)  
(7,9)  
6.8k  
G  
(6,10)  
500  
GAIN CELL  
(1,15)  
+
+
(3,13)  
10k  
BUFFER  
10k  
270  
RECTIFIER  
(16)  
P.S.  
(8)  
(4,12)  
(2,14)  
SR00695  
Figure 2. Block Diagram  
DC ELECTRICAL CHARACTERISTICS  
Standard test conditions (unless otherwise noted) V =15V, T =25°C; Expandor mode (see Test Circuit).  
CC  
A
Input signals at unity gain level (0dB) = 100mV  
at 1kHz; V = V ; R = 3.3k; R = 17.3k.  
1 2 2 3  
RMS  
SA572  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
Max  
Min  
Typ  
V
Supply voltage  
6
22  
6.3  
2.7  
1.0  
V
DC  
CC  
I
Supply current  
No signal  
mA  
CC  
V
R
Internal voltage reference  
2.3  
2.5  
V
DC  
THD  
THD  
THD  
Total harmonic distortion (untrimmed)  
Total harmonic distortion (trimmed)  
Total harmonic distortion (trimmed)  
1kHz C =1.0µF  
0.2  
%
%
%
A
1kHz C =10µF  
0.05  
0.25  
R
100Hz  
No signal output noise  
DC level shift (untrimmed)  
Unity gain level  
Input to V and V grounded (20–20kHz)  
6
±20  
0
25  
±50  
+1.5  
3
µV  
mV  
dB  
%
1
2
Input change from no signal to 100mV  
RMS  
–1.5  
Large-signal distortion  
V =V =400mV  
0.7  
1
2
Rectifier input  
V =+6dB V =0dB  
Tracking error  
(measured relative to value at unity  
±0.2  
±0.5  
dB  
dB  
2
1
gain)= [V –V (unity gain)]dB –V dB  
O
O
2
V =–30dB V =0dB  
–2.5, +1.6  
2
1
200mV  
into channel A,  
RMS  
Channel crosstalk  
60  
dB  
dB  
measured output on channel B  
PSRR  
Power supply rejection ratio  
120Hz  
70  
3
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
TEST CIRCUIT  
100Ω  
1µF  
–15V  
22µF  
+
1%  
2.2µF  
R
3
6.8k  
(7,9)  
(5,11)  
G  
V
1
17.3k  
82k  
+
5Ω  
270pF  
(2,14)  
(4,12)  
NE5234  
V
0
2.2k  
= 10µF  
(6,10)  
BUFFER  
1k  
+
2.2µF  
(8)  
(1,15)  
2.2µF  
3.3k (3,13)  
+15V  
V
RECTIFIER  
2
(16)  
+
R
2
1%  
22µF  
.1µF  
SR00696  
Figure 3. Test Circuit  
amp for current-to-voltage conversion, the VCA features low  
distortion, low noise and wide dynamic range.  
AUDIO SIGNAL PROCESSING IC COMBINES VCA  
AND FAST ATTACK/SLOW RECOVERY LEVEL  
The novel level sensor which provides gain control current for the  
VCA gives lower gain control ripple and independent control of fast  
SENSOR  
In high-performance audio gain control applications, it is desirable to  
independently control the attack and recovery time of the gain  
control signal. This is true, for example, in compandor applications  
for noise reduction. In high end systems the input signal is usually  
split into two or more frequency bands to optimize the dynamic  
behavior for each band. This reduces low frequency distortion due  
to control signal ripple, phase distortion, high frequency channel  
overload and noise modulation. Because of the expense in  
hardware, multiple band signal processing up to now was limited to  
professional audio applications.  
attack, slow recovery dynamic response. An attack capacitor C  
A
with an internal 10k resistor R defines the attack time t . The  
A
A
recovery time t of a tone burst is defined by a recovery capacitor  
R
C
and an internal 10k resistor R . Typical attack time of 4ms for  
R
R
the high-frequency spectrum and 40ms for the low frequency band  
can be obtained with 0.1µF and 1.0µF attack capacitors,  
respectively. Recovery time of 200ms can be obtained with a 4.7µF  
recovery capacitor for a 100Hz signal, the third harmonic distortion  
is improved by more than 10dB over the simple RC ripple filter with  
a single 1.0µF attack and recovery capacitor, while the attack time  
remains the same.  
With the introduction of the Signetics SA572 this high-performance  
noise reduction concept becomes feasible for consumer hi fi  
applications. The SA572 is a dual channel gain control IC. Each  
channel has a linearized, temperature-compensated gain cell and an  
improved level sensor. In conjunction with an external low noise op  
The SA572 is assembled in a standard 16-pin dual in-line plastic  
package and in oversized SOL package. It operates over a wide  
supply range from 6V to 22V. Supply current is less than 6mA. The  
SA572 is designed for applications from –40°C to +85°C.  
4
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
SA572 BASIC APPLICATIONS  
I1 ) IIN  
I2 * I1 * IIN  
ǒ Ǔ ǒ  
Ǔ (2)  
VTIn  
* VTIn  
IS  
IS  
Description  
The SA572 consists of two linearized, temperature-compensated  
gain cells (G), each with a full-wave rectifier and a buffer amplifier  
as shown in the block diagram. The two channels share a 2.5V  
common bias reference derived from the power supply but otherwise  
operate independently. Because of inherent low distortion, low noise  
and the capability to linearize large signals, a wide dynamic range  
can be obtained. The buffer amplifiers are provided to permit control  
of attack time and recovery time independent of each other.  
Partitioned as shown in the block diagram, the IC allows flexibility in  
the design of system levels that optimize DC shift, ripple distortion,  
tracking accuracy and noise floor for a wide range of application  
requirements.  
VIN  
where IIN  
+
R1  
R = 6.8kΩ  
I = 140µA  
1
1
I = 280µA  
2
I
O
is the differential output current of the gain cell and I is the gain  
G
control current of the gain cell.  
If all transistors Q through Q are of the same size, equation (2)  
1
4
can be simplified to:  
2
I2  
1
I2  
ǒ
Ǔ
IO  
+
@ IIN @ IG  
*
I2 * 2I1 @ IG  
(3)  
Gain Cell  
Figure 4 shows the circuit configuration of the gain cell. Bases of the  
The first term of Equation 3 shows the multiplier relationship of a  
linearized two quadrant transconductance amplifier. The second  
term is the gain control feedthrough due to the mismatch of devices.  
In the design, this has been minimized by large matched devices  
and careful layout. Offset voltage is caused by the device mismatch  
and it leads to even harmonic distortion. The offset voltage can be  
trimmed out by feeding a current source within ±25µA into the THD  
trim pin.  
differential pairs Q -Q and Q -Q are both tied to the output and  
1
2
3
4
inputs of OPA A . The negative feedback through Q holds the V  
1
1
BE  
of Q -Q and the V of Q -Q equal. The following relationship can  
1
2
BE  
3
4
be derived from the transistor model equation in the forward active  
region.  
DVBE  
+ DBE  
Q3Q4  
Q1Q2  
(V = V I IC/IS)  
The residual distortion is third harmonic distortion and is caused by  
gain control ripple. In a compandor system, available control of fast  
attack and slow recovery improve ripple distortion significantly. At  
the unity gain level of 100mV, the gain cell gives THD (total harmonic  
distortion) of 0.17% typ. Output noise with no input signals is only  
BE  
T IN  
1
2
1
2
1
2
1
2
IG  
)
IO  
IG  
*
IO  
V I  
* V I  
n
T
ǒ Ǔ ǒ Ǔ  
n
T
IS  
IS  
6µV in the audio spectrum (10Hz-20kHz). The output current I  
O
must feed the virtual ground input of an operational amplifier with a  
resistor from output to inverting input. The non-inverting input of the  
VIN  
where IIN  
+
R1  
operational amplifier has to be biased at V  
if the output current  
REF  
R = 6.8kΩ  
1
I
O
is DC coupled.  
I = 140µA  
1
I = 280µA  
2
V+  
1
2
1
2
I
)
I
G
O
I
1
140µA  
A1  
I
O
+
Q
Q
Q
1
2
Q
3
4
R1  
6.8k  
I
2
I
G
280µA  
V
REF  
THD  
TRIM  
V
IN  
SR00697  
Figure 4. Basic Gain Cell Schematic  
5
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
Rectifier  
Buffer Amplifier  
The rectifier is a full-wave design as shown in Figure 5. The input  
In audio systems, it is desirable to have fast attack time and slow  
recovery time for a tone burst input. The fast attack time reduces  
transient channel overload but also causes low-frequency ripple  
distortion. The low-frequency ripple distortion can be improved with  
the slow recovery time. If different attack times are implemented in  
corresponding frequency spectrums in a split band audio system,  
high quality performance can be achieved. The buffer amplifier is  
designed to make this feature available with minimum external  
components. Referring to Figure 6, the rectifier output current is  
voltage is converted to current through the input resistor R and  
turns on either Q or Q depending on the signal polarity. Deadband  
of the voltage to current converter is reduced by the loop gain of the  
gain block A . If AC coupling is used, the rectifier error comes only  
from input bias current of gain block A . The input bias current is  
2
5
6
2
2
typically about 70nA. Frequency response of the gain block A also  
causes second-order error at high frequency. The collector current  
2
of Q is mirrored and summed at the collector of Q to form the full  
6
5
wave rectified output current I . The rectifier transfer function is  
mirrored into the input and output of the unipolar buffer amplifier A  
3
R
through Q , Q and Q . Diodes D and D improve tracking  
8
9
10  
11  
12  
VIN * VREF  
(4)  
accuracy and provide common-mode bias for A . For a  
3
IR  
+
R2  
positive-going input signal, the buffer amplifier acts like a  
voltage-follower. Therefore, the output impedance of A makes the  
3
If V is AC-coupled, then the equation will be reduced to:  
IN  
contribution of capacitor CR to attack time insignificant. Neglecting  
diode impedance, the gain Ga(t) for G can be expressed as  
follows:  
VIN(AVG)  
IRAC  
+
R2  
*t  
The internal bias scheme limits the maximum output current I to be  
around 300µA. Within a ±1dB error band the input range of the rectifier  
is about 52dB.  
R
t
Ga(t) + (GaINT * GaFNL  
Ga =Initial Gain  
e
) GaFNL  
A
INT  
Ga  
=Final Gain  
FNL  
V
* V  
IN  
REF  
V+  
I
+
R
τ =R CA=10k CA  
A A  
R
2
where τ is the attack time constant and R is a 10k internal  
A
A
resistor. Diode D opens the feedback loop of A for a  
15  
3
negative-going signal if the value of capacitor CR is larger than  
capacitor CA. The recovery time depends only on CR R . If the  
R
diode impedance is assumed negligible, the dynamic gain G (t) for  
G is expressed as follows.  
R
+
V
REF  
A2  
*t  
Q5  
t
GR(t) + (GRINT * GRFNL  
e
) G  
R
RFNL  
G (t)=(G –G ) e +G  
R
R INT  
R FNL  
R FNL  
τR=R CR=10k CR  
R
D7  
where τR is the recovery time constant and R is a 10k internal  
R
resistor. The gain control current is mirrored to the gain cell through  
Q6  
Q
. The low level gain errors due to input bias current of A and A  
2 3  
14  
R2  
can be trimmed through the tracking trim pin into A with a current  
source of ±3µA.  
3
V
IN  
SR00698  
Figure 5. Simplified Rectifier Schematic  
6
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
V+  
Q8  
Q9  
Q10  
I
= 2I  
R2  
Q
Q17  
I
R2  
X2  
Q16  
10k  
V
IN  
I
+
R
R
+
D15  
D13  
A3  
10k  
I
R1  
X2  
Q18  
Q14  
D11  
D12  
CR  
CA  
TRACKING  
TRIM  
SR00699  
Figure 6. Buffer Amplifier Schematic  
error. However, an impedance buffer A may be necessary if the  
input is voltage drive with large source impedance.  
Basic Expandor  
Figure 7 shows an application of the circuit as a simple expandor.  
The gain expression of the system is given by  
1
The gain cell output current feeds the summing node of the external  
OPA A . R and A convert the gain cell output current to the output  
2
3
2
R3 @ VIN(AVG)  
R2 @ R1  
VOUT  
VIN  
2
I1  
(5)  
voltage. In high-performance applications, A has to be low-noise,  
+
@
2
high-speed and wide band so that the high-performance output of  
the gain cell will not be degraded. The non-inverting input of A can  
2
(I =140µA)  
1
be biased at the low noise internal reference Pin 6 or 10. Resistor  
R is used to bias up the output DC level of A for maximum swing.  
Both the resistors R and R are tied to internal summing nodes. R  
1
1
2
4
2
is a 6.8k internal resistor. The maximum input current into the gain  
The output DC level of A is given by  
2
cell can be as large as 140µA. This corresponds to a voltage level of  
140µA 6.8k=952mV peak. The input peak current into the rectifier  
is limited to 300µA by the internal bias system. Note that the value  
R3  
ǒ1 ) Ǔ  
R4  
R3  
(6)  
VODC + VREF  
* VB  
R4  
of R can be increased to accommodate higher input level. R and  
1
2
V
B
can be tied to a regulated power supply for a dual supply system  
R are external resistors. It is easy to adjust the ratio of R /R for  
3
3
2
and be grounded for a single supply system. CA sets the attack time  
constant and CR sets the recovery time constant. *5COL  
desirable system voltage and current levels. A small R results in  
higher gain control current and smaller static and dynamic tracking  
2
7
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
R4  
R3  
+VB  
17.3k  
C
IN2  
R1  
(5,11)  
A1  
G
C
IN1  
(7,9)  
6.8k  
V
V
+
IN  
A2  
OUT  
(6,10) R6  
2.2µF  
V
REF  
1k  
(2,14)  
C1  
R5  
100k  
(4,12)  
BUFFER  
2.2µF  
C
2.2µF  
IN3  
R2  
3.3k  
CA CR  
1µF 10µF  
(3,13)  
(8)  
(16)  
+V  
CC  
SR00700  
Figure 7. Basic Expandor Schematic  
Basic Compressor  
R4  
RDC1  
9.1k  
RDC2  
9.1k  
Figure 8 shows the hook-up of the circuit as a compressor. The IC is  
put in the feedback loop of the OPA A . The system gain expression  
1
CDC  
is as follows:  
10µF  
C2  
.1µF  
1
2
VOUT  
VIN  
I1  
2
R2 @ R1  
C
IN1  
2.2µF  
(7)  
+
ǒ
@
Ǔ
D1  
D2  
V
R3 @ VIN(AVG)  
IN  
+
V
OUT  
R3  
17.3k  
A1  
R
, R  
, and CDC form a DC feedback for A . The output DC  
DC2 1  
DC1  
level of A is given by  
1
C1  
RDC1 ) RDC2  
1k R5  
(6,10)  
(8)  
ǒ1 )  
Ǔ
VODC + VREF  
R4  
V
REF  
RDC1 ) RDC2  
R1  
6.8k  
(7,9)  
@ ǒ  
Ǔ
* VB  
G
R4  
C
2.2µF  
IN2  
The zener diodes D and D are used for channel overload  
1
2
(5,11)  
protection.  
(2,14)  
(4,12)  
C
2.2µF  
BUFFER  
IN3  
3.3k  
R2  
CR  
10µF  
CA  
1µF  
(3,13)  
(8)  
(16)  
V
CC  
SR00701  
Figure 8. Basic Compressor Schematic  
8
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
bandlimiting, band splitting, pre-emphasis, de-emphasis and  
Basic Compandor System  
equalization are easy to incorporate. The IC is a versatile functional  
block to achieve a high performance audio system. Figure 9 shows  
the system level diagram for reference.  
The above basic compressor and expandor can be applied to  
systems such as tape/disc noise reduction, digital audio, bucket  
brigade delay lines. Additional system design techniques such as  
1
2
2
REL LEVEL ABS LEVEL  
V
RMS  
COMPRESSION  
IN  
EXPANDOR  
OUT  
dB  
dBM  
INPUT TO G  
AND RECT  
3.0V  
+29.54  
+11.76  
547.6MV  
400MV  
+14.77  
+12.0  
–3.00  
–5.78  
100MV  
10MV  
1MV  
0.0  
–17.78  
–37.78  
–20  
–40  
–60  
–57.78  
–77.78  
100µV  
10µV  
–80  
–97.78  
SR00702  
Figure 9. SA572 System Level  
9
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
SO16: plastic small outline package; 16 leads; body width 7.5 mm  
SOT162-1  
10  
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
DIP16: plastic dual in-line package; 16 leads (300 mil)  
SOT38-4  
11  
1998 Nov 03  
Philips Semiconductors  
Product specification  
Programmable analog compandor  
SA572  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make chages at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1998  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Date of release: 11-98  
Document order number:  
9397 750 04749  
Philips  
Semiconductors  

相关型号:

SA572DG

Programmable Analog Compandor
ONSEMI

SA572DR2

Programmable Analog Compandor
ONSEMI

SA572DR2G

Programmable Analog Compandor
ONSEMI

SA572DTB

Programmable Analog Compandor
ONSEMI

SA572DTBG

Programmable Analog Compandor
ONSEMI

SA572DTBR2

Programmable Analog Compandor
ONSEMI

SA572DTBR2G

Programmable Analog Compandor
ONSEMI

SA572F

Programmable analog compandor
NXP

SA572N

Programmable analog compandor
NXP

SA572N

可编程模拟扩展器
ONSEMI

SA572NG

Programmable Analog Compandor
ONSEMI

SA575

Low voltage compandor
NXP