SA58670BS [NXP]
2.1 W/channel stereo Class D audio amplifier; 2.1W /声道立体声D类音频放大器
| 型号： | SA58670BS |
| 厂家： | 
NXP |
| 描述： | 2.1 W/channel stereo Class D audio amplifier |
| 文件： | 总18页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA58670
2.1 W/channel stereo Class D audio amplifier
Rev. 01 — 22 June 2007
Objective data sheet
1. General description
The SA58670 is a stereo, filter-free Class D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670 features independent shutdown controls for each channel. The gain may be
set at 6 dB, 12 dB, 18 dB or 24 dB utilizing G0 and G1 gain select pins. Improved
immunity to noise and RF rectification is increased by high PSRR and differential circuit
topology. Fast start-up time and small package, makes it an ideal choice for both cellular
handsets and PDAs.
The SA58670 delivers 1.4 W/channel at 5 V and 720 mW/channel at 3.6 V into 8 Ω. It
delivers 2.1 W/channel at 5 V into 4 Ω. The maximum power efficiency is excellent at
70 % to 74 % into 4 Ω and 84 % to 88 % into 8 Ω. The SA58670 provides thermal and
short circuit shutdown protection.
2. Features
Output power
2.1 W/channel into 4 Ω at 5 V
1.4 W/channel into 8 Ω at 5 V
720 mW/channel into 8 Ω at 3.6 V
Power supply range: 2.5 V to 5.5 V
Independent shutdown control for each channel
Selectable gain of 6 dB, 12 dB, 18 dB and 24 dB
High PSSR: 77 dB at 217 Hz
Fast start-up time of 3.5 ms
Low supply current
Low shutdown current
Short-circuit and thermal protection
Space savings with 4 mm × 4 mm HVQFN20 package
Low junction to ambient thermal resistance of 24 K/W with exposed die attach paddle
3. Applications
Wireless and cellular handsets and PDAs
Portable DVD player
USB speakers
Notebook PC
Portable radio and gaming
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
Educational toys
4. Ordering information
Table 1.
Ordering information
Type number Package
Name
Description
Version
SA58670BS
HVQFN20 plastic thermal enhanced very thin quad flat package;
SOT917-1
no leads; 20 terminals; body 4 × 4 × 0.85 mm
5. Block diagram
V
DD
to battery
SA58670
OUTRP
OUTRN
INRP
GAIN
ADJUST
H −
BRIDGE
right input
PWM
INRN
INTERNAL
GND
OSCILLATOR
OUTLP
OUTLN
INLP
INLN
GAIN
ADJUST
H −
BRIDGE
left input
PWM
G0
G1
SDR
300 kΩ
BIAS
CIRCUITRY
SHORT-CIRCUIT
PROTECTION
SDL
300 kΩ
002aac765
Refer to Table 6 for gain selection.
Fig 1. Block diagram
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
2 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
6. Pinning information
6.1 Pinning
terminal 1
index area
1
2
3
4
5
15
14
13
12
11
G1
OUTLP
PVDD
G0
OUTRP
PVDD
PGND
OUTRN
SA58670BS
PGND
OUTLN
(1)
002aac766
Transparent top view
(1) Exposed DAP.
Fig 2. Pin configuration for HVQFN20
6.2 Pin description
Table 2.
Symbol
Pin description
Pin Description
G1
1
gain select (MSB)
OUTLP
PVDD
PGND
OUTLN
n.c.
2
left channel positive output
3, 13
4, 12
5
power supply (level same as AVDD)
power ground
left channel negative output
not connected
6, 10
7
SDL
left channel shutdown (active LOW)
SDR
8
right channel shutdown (active LOW)
analog supply (level same as PVDD)
right channel negative output
right channel positive output
gain select (LSB)
AVDD
OUTRN
OUTRP
G0
9
11
14
15
16
17
18
19
20
(DAP)
INRP
INRN
AGND
INLN
INLP
-
right channel positive input
right channel negative input
analog ground
left channel negative input
left channel positive input
exposed die attach paddle; connect to ground plane heat spreader
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
3 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
7. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
VDD
supply voltage
active mode
shutdown mode
−0.3
−0.3
−0.3
<tbd>
+6.0
+7.0
V
VI
input voltage
VDD + 0.3
<tbd>
V
Ptot
P
total power dissipation
power dissipation
continuous
W
derating factor
41.6 mW/°C
Tamb = 25 °C
Tamb = 75 °C
Tamb = 85 °C
operating in free air
operating
-
5.2
W
W
W
°C
°C
°C
kV
V
-
3.12
2.7
-
Tamb
Tj
ambient temperature
junction temperature
storage temperature
Human body model
Machine model
−40
−40
−65
2
+85
+150
+85
Tstg
ESD
ESD
VSD(max)
200
GND
Shutdown pin voltage
maximum voltage
VDD
V
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
4 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
8. Static characteristics
Table 4.
Static characteristics
Tamb = 25 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
|VO(offset)
|
output offset voltage
measured differentially; inputs
AC grounded; Gv = 6 dB;
VDD = 2.5 V to 5.5 V
-
5
10
mV
PSRR
Vi(cm)
power supply rejection ratio
common-mode input voltage
common mode rejection ratio
V
DD = 2.5 V to 5.5 V
-
−75
-
−55
dB
V
0.5
-
VDD − 0.8
−50
CMRR
inputs are shorted together;
VDD = 2.5 V to 5.5 V
−69
dB
IIH
IIL
HIGH-level input current
LOW-level input current
supply current
VDD = 5.5 V; VI = VDD
VDD = 5.5 V; VI = 0 V
VDD = 5.5 V; no load
VDD = 3.6 V; no load
VDD = 2.5 V; no load
no input signal, VSD = GND
device ON
-
-
-
-
-
-
50
5
µA
µA
mA
mA
mA
nA
V
-
IDD
6
9
5
7.5
6
4
ISD
shutdown current
10
1000
VSD
shutdown voltage input
VDD/2
device OFF
GND
-
0.4
-
V
RDSon
drain-source on-state resistance
static; VDD = 5.5 V
static; VDD = 3.6 V
static; VDD = 2.5 V
VSDR, VSDL = 0.35 V
VDD = 2.5 V to 5.5 V
G0, G1 = 0.35 V
500
570
700
2
mΩ
mΩ
mΩ
kΩ
kHz
dB
dB
dB
dB
-
-
-
-
Zo(sd)
fsw
shutdown mode output impedance
switching frequency
-
-
250
5.5
11.5
17.5
23.5
300
6
350
6.5
12.5
18.5
24.5
Gv(cl)
closed-loop voltage gain
G0 = VDD; G1 = 0.35 V
G0 = 0.35 V; G1 = VDD
G0 = VDD; G1 = VDD
12
18
24
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
5 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
9. Dynamic characteristics
Table 5.
Dynamic characteristics
Tamb = 25 °C; RL = 8 Ω; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
output power
per channel; f = 1 kHz; THD+N = 10 %
RL = 8 Ω; VDD = 5.0 V
RL = 8 Ω; VDD = 3.6 V
RL = 4 Ω; VDD = 5.0 V
VDD = 5 V; Gv = 6 dB; f = 1 kHz
Po = 1 W
-
-
-
1.4
-
-
-
W
W
W
0.72
2.1
THD+N
SVRR
total harmonic
distortion-plus-noise
-
-
0.14
0.11
-
-
%
%
Po = 0.5 W
supply voltage ripple
rejection
Gv = 6 dB; f = 217 Hz
VDD = 5 V
-
-
-
−77
−73
−69
-
-
-
dB
dB
dB
VDD = 3.6 V
CMRR
Zi
common mode rejection VDD = 5 V; Gv = 6 dB; f = 217 Hz
ratio
input impedance
Gv = 6 dB
-
-
-
-
-
28.1
17.3
9.8
-
-
-
-
-
kΩ
kΩ
kΩ
kΩ
ms
Gv = 12 dB
Gv = 18 dB
Gv = 24 dB
VDD = 3.6 V
5.2
td(sd-startup)
Vn(o)
delay time from
shutdown to start-up
3.5
noise output voltage
VDD = 3.6 V; f = 20 Hz to 20 kHz;
inputs are AC grounded
no weighting
A weighting
-
-
35
27
-
-
µV
µV
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
6 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
10. Typical performance curves
002aac767
002aac768
100
100
THD+N
(%)
THD+N
(%)
(1) (2)
(1) (2)
10
10
1
1
0.1
0.01
0.1
0.01
0.1
1
10
0.1
1
10
P
o
(W)
P (W)
o
(1) VDD = 3.6 V; RL = 4 Ω; f = 1 kHz; Gv = 24 dB
(2) VDD = 5 V; RL = 4 Ω; f = 1 kHz; Gv = 24 dB
(1) VDD = 3.6 V; RL = 8 Ω; f = 1 kHz; Gv = 24 dB
(2) VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 24 dB
b. 8 Ω load
a. 4 Ω load
Fig 3. THD+N versus output power
002aac769
−60
SA58670, ch 1
SA58670, ch 2
crosstalk
(dB)
−80
−100
−120
ch 1
ch 2
2 k
3 k
4 k
5 k
6 k 7 k 8 k 9 k 10 k
20 k
crosstalk (Hz)
Fig 4. Stepped all-to-one crosstalk
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
7 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
002aac770
−30
distortion
product ratio
(dB)
−50
−70
−90
SA58670, ch 1
SA58670, ch2
−110
20 30
50
100
200 300 500
1 k
2 k 3 k
5 k
10 k
f (Hz)
20 k
Fig 5. Stepped distortion product ratio
002aac771
1 m
V
n(o)(RMS)
(V)
100 µ
10 µ
1 µ
(1)
(2)
20 30
50
100
200 300 500
1 k
2 k 3 k
5 k
10 k
20 k
f (Hz)
(1) Left channel.
(2) Right channel.
Fig 6. Noise output voltage
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
8 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
11. Application information
11.1 Power supply decoupling considerations
The SA58670 is a stereo Class D audio amplifier that requires proper power supply
decoupling to ensure the rated performance for THD+N and power efficiency. To decouple
high frequency transients, power supply spikes and digital noise on the power bus line, a
low Equivalent Series Resistance (ESR) capacitor, of typically 1 µF is placed as close as
possible to the PVDD terminals of the device. It is important to place the decoupling
capacitor at the power pins of the device because any resistance or inductance in the
PCB trace between the device and the capacitor can cause a loss in efficiency. Additional
decoupling using a larger capacitor, 4.7 µF or greater may be done on the power supply
connection on the PCB to filter low frequency signals. Usually this is not required due to
high PSRR of the device.
11.2 Input capacitor selection
The SA58670 does not require input coupling capacitors when used with a differential
audio source that is biased from 0.5 V to VDD − 0.8 V. In other words, the input signal must
be biased within the common-mode input voltage range. If high pass filtering is required or
if it is driven using a single-ended source, input coupling capacitors are required.
The high pass corner frequency created by the input coupling capacitor and the input
resistors (see Table 6) is calculated by Equation 1:
1
fC
=
(1)
-----------------------------
2π × Ri × Ci
Table 6.
Gain selection
G1
0
G0
0
Gain (V/V)
Gain (dB)
Input impedance (kΩ)
2
6
28.1
17.3
9.8
0
1
4
12
18
24
1
0
8
1
1
16
5.2
Since the value of the input decoupling capacitor and the input resistance determined by
the gain setting affects the low frequency performance of the audio amplifier, it is
important to consider in the system design. Small speakers in wireless and cellular
phones usually do not respond well to low frequency signals, so the high pass corner
frequency may be increased to block the low frequency signals to the speakers. Not using
input coupling capacitors may increase the output offset voltage.
Equation 1 is solved for Ci:
1
Ci =
(2)
----------------------------
2π × Ri × fC
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
9 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
11.3 PCB layout considerations
Component location is very important for performance of the SA58670. Place all external
components very close to the device. Placing decoupling capacitors directly at the power
supply pins increases efficiency because the resistance and inductance in the trace
between the device power supply pins and the decoupling capacitor causes a loss in
power efficiency.
The trace width and routing are also very important for power output and noise
considerations.
For high current terminals (PVDD, PGND and audio output), the trace widths should be
maximized to ensure proper performance and output power. Use at least 500 µm wide
traces.
For the input pins (INRP/INRN and INLP/INLN), the traces must be symmetrical and run
side-by-side to maximize common-mode cancellation.
11.4 Filter-free operation and ferrite bead filters
A ferrite bead low-pass filter can be used to reduce radio frequency emissions in
applications that have circuits sensitive to greater than 1 MHz. A ferrite bead low-pass
filter functions well for amplifiers that must pass FCC unintentional radiation requirements
at greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very
low-impedance at low frequencies. In order to prevent distortion of the output signal,
select a ferrite bead with adequate current rating.
For applications in which there are circuits that are EMI sensitive to low frequency
(<1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC
output filter.
11.5 Efficiency and thermal considerations
The maximum ambient operating temperature depends on the heat transferring ability of
the heat spreader on the PCB layout. In Table 3 “Limiting values”, power dissipation, the
power derating factor is given as 41.6 mW/°C. The device thermal resistance, Rth(j-a) is the
reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by the
following equation:
1
1
Rth(j-a)
=
=
= 24 °C/W
(3)
----------------------------------------
---------------
derating factor
0.0413
For a maximum allowable junction temperature, Tj = 150 °C and Rth(j-a) = 24 °C/W and a
maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel
output power, 4 Ω load, 5 V supply, the maximum ambient temperature is calculated using
Equation 4:
Tamb(max) = Tj(max) – (Rth(j-a) × PD(max)) = 150 – (24 × 1.5) = 114 °C
(4)
The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V
supply and 4 Ω load. If the junction temperature of the SA58670 rises above 150 °C, the
thermal protection circuitry turns the device off; this prevents damage to IC. Using
speakers greater than 4 Ω further enhances thermal performance and battery lifetime by
reducing the output load current and increasing amplifier efficiency.
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
10 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
11.6 Additional thermal information
The SA58670 HVQFN20 package incorporates an exposed die attach paddle (DAP) that
is designed to solder mount directly to the PCB heat spreader. By the use of thermal vias,
the DAP may be soldered directly to a ground plane or special heat sinking layer designed
into the PCB. The thickness and area of the heat spreader may be maximized to optimize
heat transfer and achieve lowest package thermal resistance.
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
11 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
12. Package outline
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 x 4 x 0.85 mm
SOT917-1
B
A
E
D
terminal 1
index area
A
A
1
c
detail X
C
e
1
y
y
v
M
M
C
C
A
B
C
1
e
b
w
6
10
L
11
15
5
1
e
e
E
2
h
terminal 1
index area
20
16
D
h
X
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
(1)
A
max.
(1)
(1)
UNIT
A
1
b
c
E
h
e
e
e
y
D
D
E
L
v
w
y
1
2
h
1
0.05 0.30
0.00 0.18
4.1
3.9
2.45 4.1
2.15 3.9
2.45
2.15
0.6
0.4
mm
0.05
0.1
1
0.2
0.5
2
2
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
05-10-08
05-10-31
SOT917 -1
- - -
MO-220
- - -
Fig 7. Package outline SOT917-1 (HVQFN20)
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
12 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
13. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus PbSn soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
13 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
13.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 8) than a PbSn process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 7 and 8
Table 7.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
220
< 2.5
235
220
≥ 2.5
220
Table 8.
Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 8.
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
14 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 8. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
14. Abbreviations
Table 9.
Abbreviations
Description
Acronym
DAP
DVD
EMI
Die Attach Paddle
Digital Video Disc
ElectroMagnetic Interference
Equivalent Series Resistance
Federal Communications Commission
inductor-capacitor filter
Least Significant Bit
ESR
FCC
LC
LSB
MSB
PC
Most Significant Bit
Personal Computer
PCB
PDA
PWM
USB
Printed-Circuit Board
Personal Digital Assistant
Pulse Width Modulator
Universal Serial Bus
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
15 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
15. Revision history
Table 10. Revision history
Document ID
Release date
20070622
Data sheet status
Change notice
Supersedes
SA58670_1
Objective data sheet
-
-
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
16 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
16.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
17. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
SA58670_1
© NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2007
17 of 18
SA58670
NXP Semiconductors
2.1 W/channel stereo Class D audio amplifier
18. Contents
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Typical performance curves . . . . . . . . . . . . . . . 7
8
9
10
11
Application information. . . . . . . . . . . . . . . . . . . 9
Power supply decoupling considerations . . . . . 9
Input capacitor selection. . . . . . . . . . . . . . . . . . 9
PCB layout considerations . . . . . . . . . . . . . . . 10
Filter-free operation and ferrite bead filters. . . 10
Efficiency and thermal considerations . . . . . . 10
Additional thermal information . . . . . . . . . . . . 11
11.1
11.2
11.3
11.4
11.5
11.6
12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Introduction to soldering . . . . . . . . . . . . . . . . . 13
Wave and reflow soldering . . . . . . . . . . . . . . . 13
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 13
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 June 2007
Document identifier: SA58670_1
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