SA605DK,118 [NXP]

SA605 - High performance low power mixer FM IF system SSOP2 20-Pin;
SA605DK,118
型号: SA605DK,118
厂家: NXP    NXP
描述:

SA605 - High performance low power mixer FM IF system SSOP2 20-Pin

光电二极管 商用集成电路
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RF COMMUNICATIONS PRODUCTS  
SA605  
High performance low power mixer FM IF  
system  
Product specification  
Replaces data of November 3, 1992  
1997 Nov 07  
RF Communications Handbook  
Philip s Se m ic ond uc tors  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
DESCRIPTION  
PIN CONFIGURATION  
The SA605 is a high performance monolithic low-power FM IF  
system incorporating a mixer/oscillator, two limiting intermediate  
frequency amplifiers, quadrature detector, muting, logarithmic  
received signal strength indicator (RSSI), and voltage regulator. The  
SA605 combines the functions of Signetics’ SA602 and SA604A, but  
features a higher mixer input intercept point, higher IF bandwidth  
(25MHz) and temperature compensated RSSI and limiters  
permitting higher performance application. The SA605 is available  
in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted  
miniature package) and 20-lead SSOP (shrink small outline  
package).  
N, D and DK Packages  
RF  
1
2
20 MIXER OUT  
IF AMP DECOUPLING  
IN  
19  
RF BYPASS  
18 IF AMP IN  
XTAL OSC  
XTAL OSC  
3
4
5
17 IF AMP DECOUPLING  
16 IF AMP OUT  
15 GND  
MUTE  
V
IN  
6
CC  
14 LIMITER IN  
RSSI  
7
8
OUT  
The SA605 and SA615 are functionally the same device types. The  
difference between the two devices lies in the guaranteed  
13  
MUTED AUDIO OUT  
UNMUTED AUDIO OUT  
QUADRATURE IN  
LIMITER DECOUPLING  
12  
specifications. The SA615 has a higher I , lower input third order  
9
LIMITER DECOUPLING  
CC  
intercept point, lower conversion mixer gain, lower limiter gain, lower  
AM rejection, lower SINAD, higher THD, and higher RSSI error than  
the SA605. Both the SA605 and SA615 devices will meet the EIA  
specifications for AMPS and TACS cellular radio applications.  
11 LIMITER OUT  
10  
SR00335  
Figure 1. Pin Configuration  
For additional technical information please refer to application notes  
AN1994, 1995 and 1996, which include example application  
diagrams, a complete overview of the product, and artwork for  
reference.  
FEATURES  
Low power consumption: 5.7mA typical at 6V  
Mixer input to >500MHz  
Mixer conversion power gain of 13dB at 45MHz  
Mixer noise figure of 4.6dB at 45MHz  
APPLICATIONS  
Cellular radio FM IF  
High performance communications receivers  
Single conversion VHF/UHF receivers  
SCA receivers  
XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local  
oscillator can be injected)  
102dB of IF Amp/Limiter gain  
25MHz limiter small signal bandwidth  
RF level meter  
Temperature compensated logarithmic Received Signal Strength  
Spectrum analyzer  
Indicator (RSSI) with a dynamic range in excess of 90dB  
Instrumentation  
Two audio outputs - muted and unmuted  
FSK and ASK data receivers  
Log amps  
Low external component count; suitable for crystal/ceramic/LC  
filters  
Excellent sensitivity: 0.22µV into 50matching network for 12dB  
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF  
at 45MHz and IF at 455kHz  
Wideband low current amplification  
SA605 meets cellular radio specifications  
ESD hardened  
ORDERING INFORMATION  
DESCRIPTION  
TEMPERATURE RANGE  
–40 to +85°C  
ORDER CODE  
SA605N  
DWG #  
20-Pin Plastic Dual In-Line Package (DIP)  
20-Pin Plastic Small Outline Large (SOL) package  
20-Pin Plastic Shrink Small Outline Package (SSOP)  
SOT146-1  
SOT163-1  
SOT266-1  
–40 to +85°C  
SA605D  
–40 to +85°C  
SA605DK  
2
1997 Nov 07  
853-1401 18663  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
BLOCK DIAGRAM  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
RSSI  
OSCILLATOR  
E
B
1
2
3
4
5
6
7
8
9
10  
SR00336  
Figure 2. Block Diagram  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
UNITS  
V
Single supply voltage  
Storage temperature range  
Operating ambient temperature range SA605  
9
V
CC  
°C  
°C  
T
STG  
-65 to +150  
–40 to +85  
T
A
Thermal impedance  
D package  
N package  
90  
75  
θ
°C/W  
JA  
SSOP package  
117  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
= +6V, T = 25°C; unless otherwise stated.  
A
LIMITS  
SA605  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX  
MIN  
4.5  
V
CC  
Power supply voltage range  
DC current drain  
8.0  
V
I
4.55  
5.7  
6.55  
mA  
CC  
Mute switch input threshold  
(ON)  
1.7  
V
V
(OFF)  
1.0  
3
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
AC ELECTRICAL CHARACTERISTICS  
T = 25°C; V = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 5.1k; RF  
A
CC  
level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.  
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.  
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed  
parameters.  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
SA605  
TYP  
UNITS  
MIN  
MAX  
Mixer/Osc section (ext LO = 300mV)  
f
Input signal frequency  
500  
150  
5.0  
-10  
13  
MHz  
MHz  
dB  
IN  
f
Crystal oscillator frequency  
Noise figure at 45MHz  
OSC  
Third-order input intercept point  
Conversion power gain  
f1 = 45.0; f2 = 45.06MHz  
Matched 14.5dBV step-up  
50source  
dBm  
dB  
10  
3.0  
15  
-1.7  
4.7  
3.5  
1.5  
dB  
RF input resistance  
RF input capacitance  
Mixer output resistance  
Single-ended input  
kΩ  
4.0  
pF  
(Pin 20)  
1.25  
kΩ  
IF section  
IF amp gain  
Limiter gain  
50source  
39.7  
62.5  
-113  
34  
dB  
dB  
50source  
Input limiting -3dB, R = 5.1k  
Test at Pin 18  
dBm  
dB  
17  
AM rejection  
80% AM 1kHz  
15nF de-emphasis  
150pF de-emphasis  
RF level -118dB  
29  
80  
43  
Audio level, R = 100k  
150  
480  
16  
260  
mV  
RMS  
10  
Unmuted audio level, R = 100k  
mV  
11  
SINAD sensitivity  
dB  
dB  
dB  
mV  
V
THD  
S/N  
Total harmonic distortion  
-34  
-42  
73  
Signal-to-noise ratio  
No modulation for noise  
IF level = -118dBm  
IF level = -68dBm  
1
IF RSSI output, R = 100kΩ  
0
160  
2.5  
4.8  
90  
650  
3.1  
5.6  
9
1.9  
4.0  
IF level = -18dBm  
V
RSSI range  
R = 100kPin 16  
9
dB  
dB  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
RSSI accuracy  
R = 100kPin 16  
9
+1.5  
1.6  
1.0  
1.6  
58  
IF input impedance  
1.40  
0.85  
1.40  
IF output impedance  
Limiter input impedance  
Unmuted audio output resistance  
Muted audio output resistance  
58  
RF/IF section (int LO)  
Unmuted audio level  
System RSSI output  
4.5V = V , RF level = -27dBm  
450  
4.3  
mV  
RMS  
CC  
4.5V = V , RF level = -27dBm  
V
CC  
NOTE:  
1. The generator source impedance is 50, but the SA605 input impedance at Pin 18 is 1500. As a result, IF level refers to the actual signal  
that enters the SA605 input (Pin 8) which is about 21dB less than the ”available power” at the generator.  
4
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
network does not cause 12dB(v) insertion loss, a fixed or variable  
resistor can be added between the first IF output (Pin 16) and the  
interstage network.  
CIRCUIT DESCRIPTION  
The SA605 is an IF signal processing system suitable for second IF  
or single conversion systems with input frequency as high as 1GHz.  
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of  
gain from a 50source. The bandwidth of the limiter is about  
28MHz with about 62.5dB(v) of gain from a 50source. However,  
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ  
source applications. The overall system is well-suited to battery  
operation as well as high performance and high quality products of  
all types.  
The signal from the second limiting amplifier goes to a Gilbert cell  
quadrature detector. One port of the Gilbert cell is internally driven  
by the IF. The other output of the IF is AC-coupled to a tuned  
quadrature network. This signal, which now has a 90° phase  
relationship to the internal signal, drives the other port of the  
multiplier cell.  
Overall, the IF section has a gain of 90dB. For operation at  
intermediate frequencies greater than 455kHz, special care must be  
given to layout, termination, and interstage loss to avoid instability.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer  
characteristics include a noise figure of 5dB, conversion gain of  
13dB, and input third-order intercept of -10dBm. The oscillator will  
operate in excess of 1GHz in L/C tank configurations. Hartley or  
Colpitts circuits can be used up to 100MHz for xtal configurations.  
Butler oscillators are recommended for xtal configurations up to  
150MHz.  
The demodulated output of the quadrature detector is available at  
two pins, one continuous and one with a mute switch. Signal  
attenuation with the mute activated is greater than 60dB. The mute  
input is very high impedance and is compatible with CMOS or TTL  
levels.  
The output of the mixer is internally loaded with a 1.5kresistor  
permitting direct connection to a 455kHz ceramic filter. The input  
resistance of the limiting IF amplifiers is also 1.5k. With most  
455kHz ceramic filters and many crystal filters, no impedance  
matching network is necessary. To achieve optimum linearity of the  
log signal strength indicator, there must be a 12dB(v) insertion loss  
between the first and second IF stages. If the IF filter or interstage  
A log signal strength completes the circuitry. The output range is  
greater than 90dB and is temperature compensated. This log signal  
strength indicator exceeds the criteria for AMPs or TACs cellular  
telephone.  
NOTE: dB(v) = 20log V  
/V  
OUT IN  
5
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
-25dB,  
-10dB,  
-29dB,  
929/50PAD  
-10.6dB,  
50/50PAD  
-36dB,  
156k/50PAD  
1500/50PAD 50/50PAD  
51.5  
C20  
96.5  
51.7  
96.5  
32.6  
50.5  
71.5  
32.8  
2430  
C24  
71.5  
C22  
1.3k  
3880  
R17  
5.1k  
C15  
C19  
C16  
SW9  
FLT1 SW8  
C23  
SW7  
SW6  
FLT2  
SW5  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF AMP  
700  
LIMITER  
RSSI  
MIXER  
QUAD  
DETECTOR  
OSCILLATOR  
MUTE  
SWITCH  
EMITTER  
BASE  
1
2
3
4
5
6
7
8
9
10  
C9  
R9  
R10  
R11  
SW1  
SW3  
C8  
SW4  
C1  
C2  
L1  
C7  
L2  
C10  
C11  
C12  
C13  
C5  
R4  
51.1  
IFT1  
SW2  
X1  
R1  
C6  
C26  
C4  
C3  
R2  
EXT.  
LOC  
OSC  
R7  
30.5  
”C” WEIGHTED  
AUDIO  
R3  
45MHZ  
MEASUREMENT  
CIRCUIT  
C14  
44.545  
R8  
39.2  
R6  
178  
45.06  
MHZ  
MUTE  
RSSI  
OUTPUT  
AUDIO UNMUTED  
AUDIO  
V
CC  
MINI–CIRCUIT ZSC2–1B  
Automatic Test Circuit Component List  
C1 47pF NPO Ceramic  
C2 180pF NPO Ceramic  
C21  
C23  
C25  
C26  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
390pF +10% Monolithic Ceramic  
C5  
100nF +10% Monolithic Ceramic  
C6 22pF NPO Ceramic  
C7 1nF Ceramic  
C8 10.0pF NPO Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
IFT 1  
L1  
L2  
455kHz 270µH TOKO #303LN-1129  
C9  
C10  
C11  
C12  
C13  
C14  
100nF +10% Monolithic Ceramic  
6.8µF Tantalum (minimum) *  
100nF +10% Monolithic Ceramic  
15nF +10% Ceramic  
150pF +2% N1500 Ceramic  
100nF +10% Monolithic Ceramic  
300nH TOKO #5CB-1055Z  
0.8µH TOKO 292CNS–T1038Z  
X1 44.545MHz Crystal ICM4712701  
R9  
R17  
R10  
R11  
100k +1% 1/4W Metal Film  
5.1k +5% 1/4W Carbon Composition  
100k +1% 1/4W Metal Film (optional)  
100k +1% 1/4W Metal Film (optional)  
C15 10pF NPO Ceramic  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
* NOTE: This value can be reduced when a battery is the power source.  
SR00337  
Figure 3. SA605 45MHz Test Circuit (Relays as shown)  
6
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
R17  
5.1k  
C15  
FLT1  
C23  
FLT2  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF AMP  
700  
LIMITER  
RSSI  
MIXER  
QUAD  
DETECTOR  
OSCILLATOR  
MUTE  
SWITCH  
1
2
3
4
5
6
7
8
9
10  
C9  
R9  
R10  
R11  
C1  
C2  
C8  
L1  
C7  
R5  
C5  
C10  
C25  
C11  
C12  
C13  
IFT1  
L2  
45MHz  
INPUT  
X1  
C26  
C6  
C14  
MUTE  
RSSI  
OUTPUT  
AUDIO UNMUTED  
AUDIO  
V
CC  
Application Component List  
C1 47pF NPO Ceramic  
C2 180pF NPO Ceramic  
C5  
C6 22pF NPO Ceramic  
C7 1nF Ceramic  
C21  
C23  
C25  
C26  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
390pF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
C8 10.0pF NPO Ceramic  
IFT 1  
L1  
L2  
455kHz 270µH TOKO #303LN-1129  
C9  
C10  
C11  
C12  
C13  
C14  
100nF +10% Monolithic Ceramic  
6.8µF Tantalum (minimum)  
100nF +10% Monolithic Ceramic  
15nF +10% Ceramic  
150pF +2% N1500 Ceramic  
100nF +10% Monolithic Ceramic  
300nH TOKO #5CB-1055Z  
0.8µH TOKO 292CNS–T1038Z  
X1 44.545MHz Crystal ICM4712701  
R9  
R17  
R10  
R11  
100k +1% 1/4W Metal Film  
5.1k +5% 1/4W Carbon Composition  
100k +1% 1/4W Metal Film (optional)  
100k +1% 1/4W Metal Film (optional)  
C15 10pF NPO Ceramic  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
* NOTE: This value can be reduced when a battery is the power source.  
SR00338  
Figure 4. SA605 45MHz Application Circuit  
7
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
RF GENERATOR  
NE605 DEMO BOARD  
45MHz  
RSSI  
AUDIO  
DATA  
V
CC  
(+6)  
C–MESSAGE  
DC VOLTMETER  
HP339A DISTORTION  
ANALYZER  
SCOPE  
SR00339  
Figure 5. SA605 Application Circuit Test Set Up  
NOTES:  
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be af-  
fected by the noise of the scope and HP339 analyzer.  
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or  
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.  
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or  
8kHz if you use 30kHz filters.  
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or -120dBm at the RF input.  
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.  
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and  
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity  
will be worse than expected.  
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum  
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in pro-  
duction. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.  
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22k, but should not  
be below 10k.  
8
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
20  
RF = 45MHz  
IF = 455kHz  
V
= 6V  
CC  
AUDIO REF = 174mV  
RMS  
RSSI  
0
–20  
–40  
5
4
3
(Volts)  
THD NOISE  
AM (80%)  
–60  
–80  
2
1
0
NOISE  
RSSI  
(Volts)  
–100  
–130  
–110  
–90  
–70  
–50  
–30  
–10  
10  
RF INPUT LEVEL (dBm)  
SR00340  
Figure 6. SA605 Application Board at 25°C  
9
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
DIP20: plastic dual in-line package; 20 leads (300 mil)  
SOT146-1  
10  
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
SO20: plastic small outline package; 20 leads; body width 7.5 mm  
SOT163-1  
11  
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
12  
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA605  
DEFINITIONS  
Data Sheet Identification  
Product Status  
Definition  
This data sheet contains the design target or goal specifications for product development. Specifications  
may change in any manner without notice.  
Objective Specification  
Formative or in Design  
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to make changes at any time without notice in order to improve design  
and supply the best possible product.  
Preliminary Specification  
Product Specification  
Preproduction Product  
Full Production  
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes  
at any time without notice, in order to improve design and supply the best possible product.  
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,  
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,  
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes  
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting  
or modification.  
LIFE SUPPORT APPLICATIONS  
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,  
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected  
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips  
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully  
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1997  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Philips  
Semiconductors  

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Low-voltage high performance mixer FM IF system
NXP

SA606DK,118

SA606 - Low-voltage high performance mixer FM IF system SSOP2 20-Pin
NXP