SL3S1203_1213 [NXP]
UCODE G2iL and G2iL+; UCODE G2iL和G2iL +的
| 型号： | SL3S1203_1213 |
| 厂家： | 
NXP |
| 描述： | UCODE G2iL and G2iL+ |
| 文件： | 总22页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SL3S1203_1213
UCODE G2iL and G2iL+
Rev. 3.2 — 9 November 2010
198732
Product short data sheet
PUBLIC
1. General description
NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support
industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and
advanced privacy-protection modes.
Very high chip sensitivity (−18 dBm) enables longer read ranges with simple, single-port
antenna designs. When connected to a power supply, the READ as well as the WRITE
range can be boosted to a sensitivity of −27 dBm. In fashion and retail the UCODE G2iL
series improve read rates and provide for theft deterrence. In the electronic device
market, they’re ideally suited for device configuration, activation, production control, and
PCB tagging. In authentication applications, they protect brands and guard against
counterfeiting. They can also be used to tag containers, electronic vehicles, airline
baggage, and more.
In addition to the EPC specifications the G2iL offers an integrated Product Status Flag
(PSF) feature and read protection of the memory content.
On top of the G2iL features the G2iL+ offers an integrated tag tamper alarm, digital switch,
external supply mode, read range reduction and data transfer mode.
2. Features and benefits
2.1 Key features
UHF RFID Gen2 tag chip according EPCglobal v1.2.0 with 128 bit EPC memory
Memory read protection
Integrated Product Status Flag (PSF)
Tag tamper alarm
Digital switch
Data transfer mode
Real Read Range Reduction (Privacy Mode)
External supply mode
2.1.1 Memory
128-bit of EPC memory
64-bit Tag IDentifier (TID) including 32-bit factory locked unique serial number
32-bit kill password to permanently disable the tag
32-bit access password to allow a transition into the secured state
Data retention: 20 years
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
Broad international operating frequency: from 840 MHz to 960 MHz
Long read/write ranges due to extremely low power design
Reliable operation of multiple tags due to advanced anti-collision
READ protection
WRITE Lock
Wide specified temperature range: −40 °C up to +85 °C
2.2 Key benefits
2.2.1 End user benefit
Prevention of unauthorized memory access through read protection
Indication of tag tampering attempt by use of the tag tamper alarm feature
Electronic device configuration and / or activation by the use of the digital switch / data
transfer mode
Theft deterrence supported by the PSF feature (PSF alarm or EPC code)
Small label sizes, long read ranges due to high chip sensitivity
Product identification through unalterable extended TID range, including a 32-bit serial
number
Reliable operation in dense reader and noisy environments through high interference
suppression
2.2.2 Antenna design benefits
High sensitivity enables small and cost efficient antenna designs
Low Q-Value eases broad band antenna design for global usage
2.2.3 Label manufacturer benefit
Consistent performance on different materials due to low Q-factor
Ease of assembly and high assembly yields through large chip input capacitance
Fast first WRITE of the EPC memory for fast label initialization
2.3 Custom commands
PSF Alarm
Built-in PSF (Product Status Flag), enables the UHF RFID tag to be used as EAS tag
(Electronic Article Surveillance) tag without the need for a back-end data base.
Read Protect
Protects all memory content including CRC16 from unauthorized reading.
ChangeConfig
Configures the additional features of the chip like external supply mode, tamper alarm,
digital switch, read range reduction or data transfer.
The UCODE G2iL is equipped with a number of additional features and custom
commands. Nevertheless, the chip is designed in a way standard EPCglobal
READ/WRITE/ACCESS commands can be used to operate the features. No custom
commands are needed to take advantage of all the features in case of unlocked EPC
memory.
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
2 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
3. Applications
3.1 Markets
Fashion (Apparel and footwear)
Retail
Electronics
Fast Moving Consumer Goods
Asset management
Electronic Vehicle Identification
3.2 Applications
Supply chain management
Item level tagging
Pallet and case tracking
Container identification
Product authentication
PCB tagging
Cost efficient, low level seals
Wireless firmware download
Wireless product activation
4. Quick reference data
Table 1.
Symbol
EEPROM characteristics
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
tret
retention time
Tamb ≤ 55 °C
20
-
-
-
year
Nendu(W)
write endurance
1000
10000[1]
cycle
[1] Tamb ≤ 25 °C
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
SL3S1203FUF
SL3S1213FUF
SL3S1203FTB0
Wafer
bumped G2iL die on sawn 8” wafer
bumped G2iL+ die on sawn 8” wafer
not applicable
not applicable
Wafer
XSON6
G2iL, plastic extremely thin small outline SOT886F1
package; no leads; 6 terminals; body 1 x
1.45 x 0.5 mm
SL3S1213FTB0
XSON6
G2iL+, plastic extremely thin small
outline package; no leads; 6 terminals;
body 1 x 1.45 x 0.5 mm
SOT886F1
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
3 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
6. Marking
Table 3.
Marking codes
Type number
SL3S1203FTB0
SL3S1213FTB0
Marking code
Comment
Version
UN
UQ
UCODE G2iL
UCODE G2iL+
SOT886
SOT886
7. Block diagram
The SL3S12x3 IC consists of three major blocks:
- Analog Interface
- Digital Controller
- EEPROM
The analog part provides stable supply voltage and demodulates data received from the
reader for being processed by the digital part. Further, the modulation transistor of the
analog part transmits data back to the reader.
The digital section includes the state machines, processes the protocol and handles
communication with the EEPROM, which contains the EPC and the user data.
ANALOG
RF INTERFACE
DIGITAL CONTROL
ANTICOLLISION
EEPROM
VREG
PAD
VDD
RECT
DEMOD
MOD
READ/WRITE
CONTROL
data
in
ANTENNA
ACCESS CONTROL
MEMORY
PAD
data
out
R/W
EEPROM INTERFACE
CONTROL
PAD
PAD
VDD
OUT
I/O
CONTROL
RF INTERFACE
CONTROL
I/O CONTROL
SEQUENCER
CHARGE PUMP
001aam226
Fig 1. Block diagram of G2iL IC
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
4 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
8. Pinning information
OUT
RFN
SL3S12x3FTB0
RFP
n.c.
1
2
3
6
5
4
VDD
n.c.
VDD NXP trademark
RFP
RFN
OUT
001aan103
001aam529
Transparent top view
Fig 2. Pinning bare die
Fig 3. Pin configuration for SOT886
8.1 Pin description
Table 4.
Symbol
OUT
Pin description bare die
Description
output pin
RFN
grounded antenna connector
external supply
VDD
RFP
ungrounded antenna connector
Table 5.
Pin description SOT886
Pin
1
Symbol
RFP
n.c.
Description
ungrounded antenna connector
not connected
2
3
RFN
OUT
n.c.
grounded antenna connector
output pin
4
5
not connected
6
VDD
external supply
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
5 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
9. Wafer layout
9.1 Wafer layout
(1)
OUT
Y
RFN
(5)
(4)
(6)
X
(7)
VDD
RFP
(8)
(2)
(3)
not to scale!
001aak871
(1) X-scribe line width: 15 μm
(2) Y-scribe line width: 15 μm
(3) Chip step, x-length: 485 μm
(4) Chip step, y-length: 435 μm
(5) Bump to bump distance X (OUT - RFN): 383 μm
(6) Bump to bump distance Y (RFN - RFP): 333 μm
(7) Distance bump to metal sealring X: 40,3 μm (outer edge - top metal)
(8) Distance bump to metal sealring Y: 40,3 μm
Bump size X × Y: 60 μm × 60 μm
Remark: OUT and VDD are used with G2iL+ only
Fig 4. G2iL wafer layout
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
6 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
10. Mechanical specification
10.1 Wafer specification
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”.
10.1.1 Wafer
Table 6.
Specifications
Wafer
Designation
each wafer is scribed with batch number
and wafer number
Diameter
200 mm (8”)
Thickness
75 μm ± 15 μm
Number of pads
Pad location
4
non diagonal/ placed in chip corners
Distance pad to pad RFN-RFP
Distance pad to pad OUT-RFN
Process
333.0 µm
383.0 µm
CMOS 0.14 µm
25 wafers
130.000
Batch size
Potential good dies per wafer
Wafer backside
Material
Si
Treatment
ground and stress release
Ra max. 0.5 μm, Rt max. 5 μm
Roughness
Chip dimensions
Die size including scribe
Scribe line width:
0.485 mm × 0.435 mm = 0.211 mm2
x-dimension = 15 μm
y-dimension = 15 μm
Passivation on front
Type
Sandwich structure
Material
PE-Nitride (on top)
Thickness
1.75 μm total thickness of passivation
Au bump
Bump material
Bump hardness
Bump shear strength
Bump height
> 99.9% pure Au
35 – 80 HV 0.005
> 70 MPa
18 μm
Bump height uniformity
within a die
± 2 μm
± 3 μm
± 4 μm
±1.5 μm
– within a wafer
– wafer to wafer
Bump flatness
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
7 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
Table 6.
Specifications
Bump size
60 × 60 μm
– RFP, RFN
60 × 60 μm
± 5 μm
– OUT, VDD
Bump size variation
10.1.2 Fail die identification
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
10.1.3 Map file distribution
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
8 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
11. Functional description
11.1 Air interface standards
The UCODE G2iL fully supports all parts of the "Specification for RFID Air Interface
EPCglobal, EPCTM Radio-Frequency Identity Protocols, Class-1 Generation-2 UHF
RFID, Protocol for Communications at 860 MHz to 960 MHz, Version 1.2.0".
11.2 Power transfer
The interrogator provides an RF field that powers the tag, equipped with a UCODE G2iL.
The antenna transforms the impedance of free space to the chip input impedance in order
to get the maximum possible power for the G2iL on the tag. The G2iL+ can also be
supplied externally.
The RF field, which is oscillating on the operating frequency provided by the interrogator,
is rectified to provide a smoothed DC voltage to the analog and digital modules of the IC.
The antenna that is attached to the chip may use a DC connection between the two
antenna pads. Therefore the G2iL also enables loop antenna design. Possible examples
of supported antenna structures can be found in the reference antenna design guide.
11.3 Data transfer
11.3.1 Reader to tag Link
An interrogator transmits information to the UCODE G2iL by modulating an UHF RF
signal. The G2iL receives both information and operating energy from this RF signal. Tags
are passive, meaning that they receive all of their operating energy from the interrogator's
RF waveform. In order to further improve the read range the UCODE G2iL can be
externally supplied as well so the energy to operate the chip does not need to be
transmitted by the reader.
An interrogator is using a fixed modulation and data rate for the duration of at least one
inventory round. It communicates to the G2iL by modulating an RF carrier using DSB-ASK
with PIE encoding.
For further details refer to Section 16, Ref. 1. Interrogator-to-tag (R=>T) communications.
11.3.2 Tag to reader Link
An interrogator receives information from a G2iL by transmitting an unmodulated RF
carrier and listening for a backscattered reply. The G2iL backscatters by switching the
reflection coefficient of its antenna between two states in accordance with the data being
sent. For further details refer to Section 16, Ref. 1, chapter 6.3.1.3.
The UCODE G2iL communicates information by backscatter-modulating the amplitude
and/or phase of the RF carrier. Interrogators shall be capable of demodulating either
demodulation type.
The encoding format, selected in response to interrogator commands, is either FM0
baseband or Miller-modulated subcarrier.
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
9 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
11.4 G2iL and G2iL+ differences
The UCODE G2iL is tailored for application where mainly EPC or TID number space is
needed. The G2iL+ in addition provides functionality such as tag tamper alarm, external
supply operation to further boost read/write range (external supply mode), a Privacy mode
reducing the read range or I/O functionality (data transfer to externally connected devices)
required.
The following table provides an overview of G2iL, G2iL+ special features.
Table 7.
Overview of G2iL and G2iL+ features
Features
G2iL
G2iL+
yes
yes
yes
yes
yes
yes
yes
yes
Read protection (bankwise)
PSF (Built-in Product Status Flag)
Backscatter strength reduction
Tag tamper alarm
yes
yes
yes
-
-
-
-
-
Digital switch / Digital input
External supply mode
Data transfer
Real read range reduction
11.5 Supported commands
The G2iL supports all mandatory EPCglobal V1.2.0 commands.
In addition the G2iL supports the following optional commands:
• ACCESS
The G2iL features the following custom commands described more in detail later:
• ResetReadProtect
• ReadProtect
• ChangeEAS
• EAS_Alarm
(backward compatible to G2X)
(backward compatible to G2X)
(backward compatible to G2X)
(backward compatible to G2X)
(new with G2iL)
• ChangeConfig
11.6 G2iL, G2iL+ memory
The G2iL, G2iL+ memory is implemented according EPCglobal Class1Gen2 and
organized in three sections:
Table 8.
Name
G2iL memory sections
Size
Bank
00b
01b
01b
10b
Reserved memory (32 bit ACCESS and 32 bit KILL password)
EPC (excluding 16 bit CRC-16 and 16 bit PC)
G2iL Configuration Word
64 bit
128 bit
16 bit
64 bit
TID (including permalocked unique 32 bit serial number)
The logical address of all memory banks begin at zero (00h).
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
10 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
In addition to the three memory banks one configuration word to handle the G2iL specific
features is available at EPC bank 01 address 200h.
Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle
before writing data to it. This approach accelerates initialization of the chip and enables
faster programming of the memory.
12. Limiting values
Table 9.
Limiting values[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to RFN
Symbol
Parameter
Conditions
Min
Max
Unit
Bare die and SOT886 limitations
Tstg
storage temperature
ambient temperature
−55
−40
-
+125
+85
± 2
°C
°C
kV
Tamb
VESD
[3]
electrostatic discharge
voltage
Human body
model
Pad limitations
Vi
input voltage
absolute limits,
VDD-OUT pad
−0.5
−0.5
+2.5
+0.5
V
Io
output current
input power
absolute limits
input/output
current,VDD-OUT
pad
mA
Pi
maximum power
dissipation, RFP
pad
-
100
mW
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any conditions other
than those described in the Operating Conditions and Electrical Characteristics section of this specification
is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the
damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be
taken to avoid applying greater than the rated maxima.
[3] For ESD measurement, the die chip has been mounted into a CDIP20 package.
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
11 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
13. Characteristics
13.1 UCODE G2iL, G2iL+ bare die characteristics
Table 10. G2iL, G2iL+ RF interface characteristics (RFN, RFP)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fi
input frequency
840
-
960
MHz
Normal mode - no external supply, read range reduction OFF
[1][2][7]
Pi(min)
Pi(min)
minimum input power
minimum input power
READ sensitivity
-
-
−18
-
-
dBm
%
WRITE sensitivity,
(write range/read
range - ratio)
30
[3]
[3]
[3]
[3]
[3]
Ci
Q
Z
input capacitance
quality factor
impedance
parallel
-
-
-
-
-
0.77
9.7
-
-
pF
-
915 MHz
866 MHz
915 MHz
953MHz
25 − j237 -
23 − j224 -
21 − j216 -
Ω
Ω
Ω
External supply mode - VDD pad supplied, read range reduction OFF
[1][2]
[2]
Pi(min)
minimum input power
Ext. supplied READ
Ext. supplied WRITE
-
-
-
−27
-
-
-
dBm
dBm
Ω
−27
[3]
Z
impedance
externally supplied,
915 MHz
7 − j230
Read range reduction ON - no external supply
[1][2][4]
[2][4]
[3]
Pi(min)
minimum input power
4R on READ
-
-
-
+12
-
-
-
dBm
dBm
Ω
4R on WRITE
4R on, 915 MHz
+12
Z
impedance
18 − j2
Modulation resistance
[5]
[6]
R
resistance
modulation
resistance, max.
backscatter = off
-
-
170
55
-
-
Ω
Ω
modulation
resistance, max.
backscatter = on
[1] Power to process a Query command.
[2] Measured with a 50 Ω source impedance.
[3] At minimum operating power.
[4] It has to be assured the reader (system) is capable of providing enough field strength to give +12 dBm at the chip otherwise
communication with the chip will not be possible.
[5] Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4.
[6] Will result in up to 10 dB higher tag backscatter power at high field strength.
[7] Results in approx. −18.5 dBm tag sensitivity on a 2 dBi gain antenna.
SL3S1203_1213_SDS
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© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
Table 11. VDD pin characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
[1][3][4]
Minimum supply voltage/current - without assisted EEPROM WRITE
VDD
IDD
input voltage
minimum voltage
-
-
-
-
1.8
7
V
supply current
minimum current,
Iout = 0 μA
μA
Iout = 100 μA
-
-
-
110
μA
[2][3][4]
Minimum supply voltage/current - assisted EEPROM READ and WRITE
VDD
input voltage
minimum voltage,
out = 0 μA
1.8
1.85
V
I
Iout = 100 μA
-
-
-
-
1.95
125
V
IDD
supply current
minimum current,
Iout = 0 μA
μA
Iout = 100 μA
-
-
265
μA
[3][5]
Maximum supply voltage/current
VDD
input voltage
absolute maximum
voltage
2.2
-
-
-
-
V
Ii(max)
maximum input current
absolute maximum
current
280
μA
[1] Activates Digital Output (OUT pin), increases read range (external supplied).
[2] Activates Digital Output (OUT pin), increases read and write range (external supplied).
[3] Operating the chip outside the specified voltage range may lead to undefined behaviour.1925.
[4] Either the voltage or the current needs to be above given values to guarantee specified functionality.
[5] No proper operation is guaranteed if both, voltage and current, limits are exceeded.
Table 12. G2iL, G2iL+ VDD and OUT pin characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
OUT pin characteristics
VOL
VOH
Low-level output voltage
HIGH-level output voltage
Isink = 1mA
-
-
-
100
-
mV
V
VDD = 1.8 V; Isource
1.5
= −100µA
VDD/OUT pin characteristics
[1]
[2]
CL
Vo
load capacitance
output voltage
VDD - OUT pin max.
-
-
-
-
5
pF
maximum RF peak
voltage on VDD-OUT
pins
500
mV
[3]
[4]
[5]
VDD/OUT pin tamper alarm characteristics
RL(max)
RL(min)
maximum load resistance
minimum load resistance
resistance range high
resistance range low
-
-
-
<2
-
MΩ
MΩ
>20
[1] Is the sum of the allowed capacitance of the VDD and OUT pin referenced to RFN.
[2] Is the maximum allowed RF input voltage coupling to the VDD/OUT pin to guarantee undisturbed chip functionality.
[3] Resistance between VDD and OUT pin in checked during power up only.
[4] Resistance range to achieve tamper alarm flag = 1.
[5] Resistance range to achieve tamper alarm flag = 0:
SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
13 of 22
SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
For further reading we recommend application note “FAQ UCODE G2iL+“ (Ref. 22)
describing the output characteristics more in detail. An example schematic is available in
application note “UCODE G2iL+ Demoboard Manual“ (Ref. 23). The documents are
available at NXP Document Control or at the website www.nxp.com.
Table 13. G2iL, G2iL+ memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
EEPROM characteristics
tret
retention time
Tamb ≤ 55 °C
20
-
-
-
year
Nendu(W)
write endurance
1000 10000[1]
cycle
[1] Tamb ≤ 25 °C
13.2 UCODE G2iL, G2iL+ SOT886 characteristics
Table 14. G2iL, G2iL+ RF interface characteristics (RFN, RFP)
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Normal mode - no external supply, read range reduction OFF
[1][2]
Pi(min)
minimum input power
READ
sensitivity
-
-
−17.6
-
-
dB
m
[3]
Z
impedance
915 MHz
21 -j199
Ω
[1] Power to process a Query command.
[2] Measured with a 50 Ω source impedance.
[3] At minimum operating power.
Remark: For DC and memory characteristics refer to Table 11, Table 12 and Table 13.
14. Packing information
14.1 Wafer
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
14.2 SOT886
Part orientation T1. For details please refer to
http://www.standardics.nxp.com/packaging/packing/pdf/sot886.t1.t4.pdf.
SL3S1203_1213_SDS
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Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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SL3S1203_1213
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UCODE G2iL and G2iL+
15. Abbreviations
Table 15. Abbreviations
Acronym
CRC
Description
Cyclic Redundancy Check
Direct Current
DC
EAS
Electronic Article Surveillance
EEPROM
EPC
Electrically Erasable Programmable Read Only Memory
Electronic Product Code (containing Header, Domain Manager, Object Class
and Serial Number)
FM0
G2
Bi phase space modulation
Generation 2
IC
Integrated Circuit
Product Status Flag
Radio Frequency
Ultra High Frequency
Tag IDentifier
PSF
RF
UHF
TID
SL3S1203_1213_SDS
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UCODE G2iL and G2iL+
16. References
[1] EPCglobal: EPC Radio-Frequency Identity Protocols Class-1 Generation-2 UHF
RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.1.0
(December 17, 2005)
[2] EPCglobal: EPC Tag Data Standards
[3] EPCglobal (2004): FMCG RFID Physical Requirements Document (draft)
[4] EPCglobal (2004): Class-1 Generation-2 UHF RFID Implementation Reference
(draft)
[5] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 1 – Technical characteristics and test methods
[6] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 2 – Harmonized EN under article 3.2 of the R&TTE directive
[7] [CEPT1]: CEPT REC 70-03 Annex 1
[8] [ETSI1]: ETSI EN 330 220-1, 2
[9] [ETSI3]: ETSI EN 302 208-1, 2 V<1.1.1> (2004-09-Electromagnetic compatibility
And Radio spectrum Matters (ERM) Radio Frequency Identification Equipment
operating in the band 865 - MHz to 868 MHz with power levels up to 2 W Part 1:
Technical characteristics and test methods.
[10] [FCC1]: FCC 47 Part 15 Section 247
[11] ISO/IEC Directives, Part 2: Rules for the structure and drafting of International
Standards
[12] ISO/IEC 3309: Information technology – Telecommunications and information
exchange between systems – High-level data link control (HDLC) procedures –
Frame structure
[13] ISO/IEC 15961: Information technology, Automatic identification and data capture –
Radio frequency identification (RFID) for item management – Data protocol:
application interface
[14] ISO/IEC 15962: Information technology, Automatic identification and data capture
techniques – Radio frequency identification (RFID) for item management – Data
protocol: data encoding rules and logical memory functions
[15] ISO/IEC 15963: Information technology — Radio frequency identification for item
management — Unique identification for RF tags
[16] ISO/IEC 18000-1: Information technology — Radio frequency identification for item
management — Part 1: Reference architecture and definition of parameters to be
standardized
[17] ISO/IEC 18000-6: Information technology automatic identification and data capture
techniques — Radio frequency identification for item management air interface —
Part 6: Parameters for air interface communications at 860–960 MHz
[18] ISO/IEC 19762: Information technology AIDC techniques – Harmonized vocabulary
– Part 3: radio-frequency identification (RFID)
SL3S1203_1213_SDS
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Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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NXP Semiconductors
UCODE G2iL and G2iL+
[19] U.S. Code of Federal Regulations (CFR), Title 47, Chapter I, Part 15:
Radio-frequency devices, U.S. Federal Communications Commission.
[20] Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**1
[21] Data sheet - Flip chip strap - FCS2, General packing specification, BU-ID document
number: 1738**
[22] Application note - FAQ UCODE G2iL+, BU-ID document number: 1925**
[23] Application note - UCODE G2iL+ Demoboard Manual, BU-ID document number:
1915**
[24] Data sheet - SL3S1203_1213, UCODE G2iL and G2iL+, BU-ID document number:
1788**
1. ** ... document version number
SL3S1203_1213_SDS
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Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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NXP Semiconductors
UCODE G2iL and G2iL+
17. Revision history
Table 16. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
- SL3S1203_1213_SDS v.3.1
SL3S1203_1213_SDS v.3.2 20101109
Product short data sheet
Modifications:
• Version SOT886F1 added
• Section 6 “Marking” and Section 14 “Packing information”: added
SL3S1203_1213_SDS v.3.1 20101006
Product short data sheet
-
-
SL3S1203_1213_SDS
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Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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NXP Semiconductors
UCODE G2iL and G2iL+
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
18.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
18.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
SL3S1203_1213_SDS
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© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
18.4 Trademarks
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
UCODE — is a trademark of NXP B.V.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SL3S1203_1213_SDS
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Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
20. Tables
Table 1. Quick reference data . . . . . . . . . . . . . . . . . . . . .3
Table 2. Ordering information. . . . . . . . . . . . . . . . . . . . . .3
Table 3. Marking codes . . . . . . . . . . . . . . . . . . . . . . . . . .4
Table 4. Pin description bare die . . . . . . . . . . . . . . . . . . .5
Table 5. Pin description SOT886 . . . . . . . . . . . . . . . . . . .5
Table 6. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Table 7. Overview of G2iL and G2iL+ features . . . . . . .10
Table 8. G2iL memory sections . . . . . . . . . . . . . . . . . . .10
Table 9. Limiting values[1][2] . . . . . . . . . . . . . . . . . . . . . .11
Table 10. G2iL, G2iL+ RF interface characteristics
(RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 11. VDD pin characteristics . . . . . . . . . . . . . . . . . . 13
Table 12. G2iL, G2iL+ VDD and OUT pin
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 13. G2iL, G2iL+ memory characteristics . . . . . . . . 14
Table 14. G2iL, G2iL+ RF interface characteristics
(RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 15. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 16. Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18
21. Figures
Fig 1. Block diagram of G2iL IC . . . . . . . . . . . . . . . . . . .4
Fig 2. Pinning bare die. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Fig 3. Pin configuration for SOT886 . . . . . . . . . . . . . . . .5
Fig 4. G2iL wafer layout. . . . . . . . . . . . . . . . . . . . . . . . . .6
SL3S1203_1213_SDS
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© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
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SL3S1203_1213
NXP Semiconductors
UCODE G2iL and G2iL+
22. Contents
1
General description. . . . . . . . . . . . . . . . . . . . . . 1
17
Revision history . . . . . . . . . . . . . . . . . . . . . . . 18
2
2.1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Key benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
End user benefit . . . . . . . . . . . . . . . . . . . . . . . . 2
Antenna design benefits . . . . . . . . . . . . . . . . . . 2
Label manufacturer benefit. . . . . . . . . . . . . . . . 2
Custom commands. . . . . . . . . . . . . . . . . . . . . . 2
18
Legal information . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 20
18.1
18.2
18.3
18.4
2.1.1
2.2
2.2.1
2.2.2
2.2.3
2.3
19
20
21
22
Contact information . . . . . . . . . . . . . . . . . . . . 20
Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3
3.1
3.2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Markets. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4
Quick reference data . . . . . . . . . . . . . . . . . . . . . 3
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pinning information. . . . . . . . . . . . . . . . . . . . . . 5
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
6
7
8
8.1
9
9.1
10
10.1
10.1.1
10.1.2
10.1.3
Mechanical specification . . . . . . . . . . . . . . . . . 7
Wafer specification . . . . . . . . . . . . . . . . . . . . . . 7
Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Fail die identification . . . . . . . . . . . . . . . . . . . . 8
Map file distribution. . . . . . . . . . . . . . . . . . . . . . 8
11
Functional description . . . . . . . . . . . . . . . . . . . 9
Air interface standards . . . . . . . . . . . . . . . . . . . 9
Power transfer . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data transfer. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reader to tag Link . . . . . . . . . . . . . . . . . . . . . . 9
Tag to reader Link. . . . . . . . . . . . . . . . . . . . . . . 9
G2iL and G2iL+ differences . . . . . . . . . . . . . . 10
Supported commands . . . . . . . . . . . . . . . . . . 10
G2iL, G2iL+ memory . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.3.1
11.3.2
11.4
11.5
11.6
12
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11
13
13.1
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 12
UCODE G2iL, G2iL+ bare die
characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 12
UCODE G2iL, G2iL+ SOT886
13.2
characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 14
14
14.1
14.2
Packing information . . . . . . . . . . . . . . . . . . . . 14
Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
SOT886 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15
16
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 November 2010
198732
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