TDA1015T [NXP]

0,5 W audio power amplifier; 0,5 2W音频功率放大器
TDA1015T
型号: TDA1015T
厂家: NXP    NXP
描述:

0,5 W audio power amplifier
0,5 2W音频功率放大器

放大器 功率放大器
文件: 总10页 (文件大小:76K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA1015T  
0,5 W audio power amplifier  
March 1986  
Product specification  
File under Integrated Circuits, ICO1  
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
GENERAL DESCRIPTION  
The TDA1015T is a low-cost audio amplifier which can deliver up to 0,5 W output power into a 16 load impedance at  
a supply voltage of 9 V. The amplifier is specially designed for portable applications such as radios and recorders.  
The IC has a very low supply voltage requirement (3,6 V min.).  
Features  
High input impedance  
Separated preamplifier and power amplifier  
Limited noise behaviour at radio frequencies  
Short-circuit protected  
Miniature encapsulation.  
QUICK REFERENCE DATA  
Supply voltage range  
V
3,6 to 12 V  
P
Peak output current  
I
max.  
1 A  
OM  
Output power  
P
typ.  
typ.  
0,5 W  
29 dB  
23 dB  
22 mA  
o
Voltage gain power amplifier  
Voltage gain preamplifier  
Total quiescent current  
Operating ambient temperature range  
Storage temperature range  
G
G
V1  
typ.  
V2  
I
max.  
tot  
T
25 to +150 °C  
55 to + 150 °C  
amb  
stg  
T
PACKAGE OUTLINE  
8-lead mini-pack; plastic (SO8; SOT96A); SOT96-1; 1996 July 23.  
March 1986  
2
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
Fig.1 Block diagram.  
RATINGS  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
Supply voltage  
V
max.  
max.  
12 V  
1 A  
P
Peak output current  
Total power dissipation  
Storage temperature range  
I
OM  
see derating curve Fig.2  
55 to + 150 °C  
t max. 1 hour  
sc  
A.C. short-circuit duration of load during sine-wave drive at V = 9 V  
P
Fig.2 Power derating curve.  
March 1986  
3
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
CHARACTERISTICS  
T
= 25 °C; V = 9 V; R = 16 ; f = 1 kHz; see Fig.3; unless otherwise specified  
P L  
amb  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
V
Supply voltage  
3,6  
9
12  
1
V
P
I
Repetitive peak output current  
Total quiescent current  
A
ORM  
I
12  
22  
mA  
tot  
A.F. output power at d = 10%; note 1  
tot  
P
P
V = 9 V; R = 16 Ω  
0,5  
0,3  
29  
W
o
P
L
V = 6 V; R = 8 Ω  
W
o
P
L
G
G
G
Voltage gain power amplifier  
dB  
dB  
dB  
Hz  
kΩ  
kΩ  
kΩ  
v1  
v2  
tot  
Voltage gain preamplifier (note 2)  
Total voltage gain  
23  
49  
52  
55  
B
Frequency response at 3 dB (note 3)  
Input impedance power amplifier  
Input impedance preamplifier (note 4)  
Output impedance preamplifier  
Output voltage preamplifier (r.m.s. value)  
60 to 15 000 −  
|Z |  
20  
200  
1
i1  
|Z |  
100  
0,5  
i2  
|Z |  
1,5  
o2  
V
d
< 1% (note 2)  
0,7  
V
o2(rms)  
tot  
Noise output voltage (r.m.s. value); note 5  
R = 0 Ω  
V
0,2  
0,5  
mV  
mV  
n(rms)  
S
V
R = 10 kΩ  
n(rms)  
S
Noise output voltage (r.m.s. value)  
V
f = 500 kHz; B = 5 kHz; R = 0 Ω  
8
µV  
n(rms)  
S
Ripple rejection at f = 100 Hz;  
RR  
C2 = 1 µF (note 6)  
38  
dB  
Notes to the characteristics  
1. Output power is measured with an ideal coupling capacitor to the speaker load.  
2. Measured with a load resistance of 20 k.  
3. The frequency response is mainly determined by the capacitors, C1, C3 (low frequency) and C4 (high frequency).  
4. Independent of load impedance of preamplifier.  
5. Effective unweighted r.m.s. noise voltage measured in a bandwidth from 60 Hz to 15 kHz (slopes 12 dB/octave).  
6. Ripple rejection measured with a source impedance between 0 and 2 k(maximum ripple amplitude of 2 V).  
March 1986  
4
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
APPLICATION INFORMATION  
Fig.3 Test circuit.  
______ measured in Fig.3  
− − − − measured with a 1,5 Mresistor  
connected between pins 7 and 2.  
Fig.4 Total quiescent current as a function  
of supply voltage.  
Fig.5 Output power as a function of supply  
voltage; d = 10%; f = 1 kHz.  
tot  
March 1986  
5
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
______ measured in Fig.3  
− − − − measured with a 1,5 Mresistor connected between pins 7 and 2.  
Fig.6 Total distortion as a function of output power; V = 9 V; R = 16 ; f = kHz.  
P
L
Fig.7 Application circuit for power stage only and battery power supply; G = 29 dB; |Z | = 20 k.  
v1  
i1  
March 1986  
6
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
Fig.8 Application circuit for preamplifier and power amplifier stages and battery power supply;  
= 52 dB; |Z | = 200 k.  
G
v tot  
i2  
March 1986  
7
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
PACKAGE OUTLINE  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.050  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-02-04  
97-05-22  
SOT96-1  
076E03S  
MS-012AA  
March 1986  
8
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
SOLDERING  
Introduction  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Repairing soldered joints  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
Reflow soldering  
Reflow soldering techniques are suitable for all SO  
packages.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
Wave soldering  
Wave soldering techniques can be used for all SO  
packages if the following conditions are observed:  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave) soldering  
technique should be used.  
The longitudinal axis of the package footprint must be  
parallel to the solder flow.  
The package footprint must incorporate solder thieves at  
the downstream end.  
March 1986  
9
Philips Semiconductors  
Product specification  
0,5 W audio power amplifier  
TDA1015T  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
March 1986  
10  

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