TDA1562SD/N3C,112 [NXP]
IC 70 W, 1 CHANNEL, AUDIO AMPLIFIER, PZFM17, POWER, REVERSE BENT, PLASTIC, SOT-668-2, RECTANGULAR-DIL-BENT-SIL, 17 PIN, Audio/Video Amplifier;
| 型号： | TDA1562SD/N3C,112 |
| 厂家： | 
NXP |
| 描述： | IC 70 W, 1 CHANNEL, AUDIO AMPLIFIER, PZFM17, POWER, REVERSE BENT, PLASTIC, SOT-668-2, RECTANGULAR-DIL-BENT-SIL, 17 PIN, Audio/Video Amplifier 局域网 放大器 商用集成电路 |
| 文件： | 总24页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1562Q; TDA1562ST;
TDA1562SD
70 W high efficiency power
amplifier with diagnostic facility
Preliminary specification
2003 Feb 12
Supersedes data of 1998 Apr 07
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
FEATURES
• Fast mute on supply voltage drops
• Quick start option (e.g. car-telephony/navigation)
• Low (delta) offset voltage at the outputs
• Load dump protection
• Very high output power, operating from a single low
supply voltage
• Low power dissipation, when used for music signals
• Switches to low output power at too high case
• Short-circuit safe to ground, supply voltage and across
temperatures
the load
• Few external components
• Low power dissipation in any short-circuit condition
• Protected against electrostatic discharge
• Thermally protected
• Fixed gain
• Differential inputs with high common mode rejection
• Mode select pin (on, mute and standby)
• Status I/O pin (class-H, class-B and fast mute)
• All switching levels with hysteresis
• Diagnostic pin with information about:
– Dynamic Distortion Detector (DDD)
– Any short-circuit at outputs
• Flexible leads.
GENERAL DESCRIPTION
The TDA1562 is a monolithic integrated 70 W/4 Ω
Bridge-Tied Load (BTL) class-H high efficiency power
amplifier in a 17 lead DIL-bent-SIL plastic power package.
The device can be used for car audio systems (e.g.
car radios and boosters) as well as mains fed applications
(e.g. midi/mini audio combinations and TV sound).
– Open load detector
– Temperature protection.
• No switch-on or switch-off plops
QUICK REFERENCE DATA
VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN.
VP supply voltage operating; note 1
TYP.
14.4
MAX.
18
UNIT
8
−
−
−
V
V
V
non-operating
load dump
−
30
−
45
Iq
quiescent current
on and mute; RL = open
circuit
110
150
mA
Istb
standby current
standby
−
−
−
3
50
100
30
27
−
µA
mV
mV
dB
kΩ
W
VOO
∆VOO
Gv
Zi(dif)
Po
output offset voltage
delta output offset voltage
voltage gain
on and mute
on ↔ mute
−
−
25
90
45
60
−
26
150
55
70
0.03
0.06
2.1
differential input impedance
output power
THD = 0.5%
THD = 10%
Po = 1 W
−
−
W
THD
total harmonic distortion
−
%
Po = 20 W
DDD active
−
−
%
−
−
%
2003 Feb 12
2
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
SYMBOL
SVRR
PARAMETER
CONDITIONS
on and mute
MIN.
55
TYP.
63
MAX.
UNIT
dB
supply voltage ripple rejection
common mode rejection ratio
input signal rejection ratio
noise output voltage
−
−
−
CMRR
ISRR
Vn(o)
on
56
80
−
80
dB
dB
µV
mute
on
100
100
150
Note
1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 Ω).
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TDA1562Q
DBS17P
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)
SOT243-1
SOT243-3
SOT577-2
TDA1562Q/S10
TDA1562ST
RDBS17P plastic rectangular-DIL-bent-SIL power package; 17 leads (row
spacing 2.54 mm)
TDA1562SD
RDBS17P plastic rectangular-DIL-bent-SIL (reverse bent) power package;
17 leads (row spacing 2.54 mm)
SOT668-2
2003 Feb 12
3
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
BLOCK DIAGRAM
V
V
C1−
C1+
P1
9
P2
10
3
5
CLASS-B
CLASS-H
FAST MUTE
16
4
LOAD DUMP
PROTECTION
TEMPERATURE
SENSOR
STAT
disable
CURRENT
PROTECTION
STANDBY
MUTE
ON
MODE
LIFT-SUPPLY
V
*
P
TDA1562
1
+
IN+
7
POWER-
STAGE
PREAMP
−
OUT+
75
kΩ
DIAGNOSTIC
INTERFACE
FEEDBACK
CIRCUIT
LOAD
DETECTOR
DYNAMIC
DISTORTION
DETECTOR
8
DIAG
75
kΩ
−
11
POWER-
STAGE
PREAMP
+
OUT−
2
IN−
V
*
P
14
V
ref
TEMPERATURE
PROTECTION
LIFT-SUPPLY
15 kΩ
disable
reference
voltage
17
SGND
MGL264
15
C2−
13
C2+
6
12
PGND2
PGND1
Fig.1 Block diagram.
2003 Feb 12
4
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
PINNING
SYMBOL
PIN
DESCRIPTION
signal input (positive)
handbook, halfpage
IN+
IN−
C1−
1
2
3
IN+
IN−
1
2
signal input (negative)
negative terminal of lift electrolytic
capacitor 1
C1−
3
MODE
C1+
4
MODE
C1+
4
5
mode select input
positive terminal of lift electrolytic
capacitor 1
5
PGND1
OUT+
DIAG
6
PGND1
OUT+
DIAG
VP1
6
7
power ground 1
7
positive output
8
8
diagnostic output (open-collector)
supply voltage 1
TDA1562Q
TDA1562ST
TDA1562SD
V
9
9
P1
VP2
10
11
12
13
supply voltage 2
V
10
P2
OUT−
PGND2
C2+
negative output
OUT− 11
PGND2 12
C2+ 13
power ground 2
positive terminal of lift electrolytic
capacitor 2
V
14
ref
Vref
14
15
internal reference voltage
C2− 15
STAT 16
SGND 17
C2−
negative terminal of lift electrolytic
capacitor 2
STAT
16
17
status I/O
SGND
signal ground
MGL263
Fig.2 Pin configuration.
2003 Feb 12
5
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
FUNCTIONAL DESCRIPTION
Status I/O (pin STAT)
The TDA1562 contains a mono class-H BTL output power
amplifier. At low output power, up to 18 W, the device
operates as a normal BTL amplifier. When a larger output
voltage swing is required, the internal supply voltage is
lifted by means of the external electrolytic capacitors. Due
to this momentarily higher supply voltage the obtainable
output power is 70 W.
INPUT
This input has 3 possibilities:
1. LOW for fast mute: the circuit remains switched on, but
the input signal is suppressed
2. MID for class-B: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
independent of the case temperature
In normal use, when the output is driven with music-like
signals, the high output power is only needed during a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the reduction in dissipation is about 50% when
compared to a class-B output amplifier with the same
output power. The heatsink should be designed for use
with music signals. If the case temperature exceeds
120 °C the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 20 W.
3. HIGH for class-H: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
independent of the case temperature.
When the circuit is switched from fast mute to class-B/H or
vice versa the switching is immediately carried out. When
the circuit is switched from class-B to class-H or vice versa
the actual switching takes place at a zero crossing of the
input signal.
OUTPUT
When the supply voltage drops below the minimum
operating level, the amplifier will be muted immediately.
This output has 3 possibilities:
1. LOW for mute: acknowledge of muted amplifier
Mode select input (pin MODE)
2. MID for class-B: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
caused by the case temperature Tc > 120 °C
This pin has 3 modes:
1. LOW for standby: the complete circuit is switched off,
the supply current is very low
3. HIGH for class-H: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
because the case temperature Tc < 120 °C.
2. MID for mute: the circuit is switched on, but the input
signal is suppressed
When the circuit is switched from class-B to class-H or vice
versa the actual switching takes place at a zero crossing
of the input signal.
3. HIGH for on: normal operation, the input signal is
amplified by 26 dB.
When the circuit is switched from mute to on or vice versa
the actual switching takes place at a zero crossing of the
input signal. The circuit contains a quick start option, i.e.
when it is switched directly from standby to on, the
amplifier is fully operational within 50 ms (important for
applications like car telephony and car navigation).
The status I/O pins of maximum 8 devices may be tied
together for synchronizing purposes.
2003 Feb 12
6
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
on
supply
mute
voltage
0
HIGH
mode select
MID
input
LOW
V
ref
VRT
reference
voltage
0
HIGH
status I/O
input
MID
LOW
HIGH
class-H (T < 120 °C)
status I/O
output
c
MID
class-B (T > 120 °C)
c
LOW
output voltage
across load
0
zero crossing mute
function
zero crossing change
class-B/H operation
fast mute
function
supply mute
function
quick start
mute
MGL272
Fig.3 Switching characteristics.
2003 Feb 12
7
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Diagnostic output (pin DIAG)
TEMPERATURE DETECTION
DYNAMIC DISTORTION DETECTOR (DDD)
Just before the temperature protection becomes active the
diagnostic output becomes continuously LOW.
At the onset of clipping of the output stages, the DDD
becomes active. This information can be used to drive a
sound processor or DC-volume control to attenuate the
input signal and so limit the distortion.
LOAD DETECTION
Directly after the circuit is switched from standby to mute
or on, a built-in detection circuit checks whether a load is
present. The results of this check can be detected at the
diagnostic output, by switching the mode select input in the
mute mode.
SHORT-CIRCUIT PROTECTION
When a short-circuit occurs at the outputs to ground or to
the supply voltage, the output stages are switched off.
They will be switched on again approximately 20 ms after
removing the short-circuit. During this short-circuit
condition the diagnostic output is continuously LOW.
Since the diagnostic output is an open-collector output,
more devices can be connected.
When a short-circuit occurs across the load, the output
stages are switched off during approximately 20 ms. After
that time is checked during approximately 50 µs whether
the short-circuit is still present. During this short-circuit
condition the diagnostic output is LOW for 20 ms and
HIGH for 50 µs. The power dissipation in any short-circuit
condition is very low.
HIGH
mode select
MID
input
LOW
output voltage
across load
0
HIGH
diagnostic
output
no load
LOW
t
short-circuit to
supply or ground
short-circuit
across load
clipping signal
MGL265
Fig.4 Diagnostic information.
8
2003 Feb 12
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
status I/O: high
status I/O: open
class-H
maximum output
voltage swing
class-B
0
HIGH
diagnostic
output
LOW
HIGH
status I/O
MID
output
LOW
100
120
145
150
160
T (°C)
j
MGL266
Fig.5 Behaviour as a function of temperature.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VP supply voltage operating; note 1
MIN.
MAX.
18
UNIT
−
−
−
−
−
−
V
V
V
A
A
V
non-operating
30
45
10
8
load dump; tr > 2.5 ms; t = 50 ms
IOSM
IORM
Vsc
non-repetitive peak output current
repetitive peak output current
short-circuit safe voltage
storage temperature
18
+150
−
Tstg
Tamb
Tj
−55
−40
−
°C
°C
°C
W
ambient temperature
junction temperature
note 2
150
60
Ptot
total power dissipation
−
Notes
1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 Ω).
2. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.
Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1).
2003 Feb 12
9
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
QUALITY SPECIFICATION
Quality in accordance with “SNW-FQ-611D”, if this type is used as an audio amplifier.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to case
thermal resistance from junction to ambient
CONDITIONS
VALUE
1.5
UNIT
K/W
K/W
Rth(j-c)
Rth(j-a)
in free air
40
DC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies VP1 and VP2
VP
supply voltage
8
7
7
−
−
14.4
18
V
V
V
VP(th+)
VP(th−)
VP(H1)
Iq
supply threshold voltage
supply threshold voltage
mute → on
−
9
on → mute
−
9
hysteresis (Vth+ − Vth−
)
200
110
−
mV
mA
quiescent current
on and mute;
150
RL = open circuit
Istb
standby current
standby
−
3
50
µA
Amplifier outputs OUT+ and OUT−
VO
VOO
∆VOO
output voltage
on and mute
on and mute
on ↔ mute
−
−
−
6.5
−
−
V
output offset voltage
delta output offset voltage
100
30
mV
mV
−
Mode select input MODE
VI
input voltage
0
−
1
−
VP
20
2.2
2
V
II
input current
VMODE = 14.4 V
standby → mute
mute → standby
15
−
µA
V
Vth1+
Vth1−
VmsH1
Vth2+
Vth2−
VmsH2
threshold voltage 1+
threshold voltage 1−
hysteresis (Vth1+ − Vth1−
threshold voltage 2+
threshold voltage 2−
hysteresis (Vth2+ − Vth2−
0.9
−
−
V
)
)
200
−
−
mV
V
mute → on
on → mute
3.3
3.3
−
4.2
4
−
V
200
−
mV
Status I/O STAT
PIN STAT AS INPUT
Vst
input voltage
0
−
−
−
−
VP
4.5
−400
2
V
Ist(H)
Ist(L)
Vth1+
Vth1−
VstH1
HIGH-level input current
LOW-level input current
threshold voltage 1+
VSTAT = 14.4 V
VSTAT = 0 V
3.5
−350
−
mA
µA
V
fast mute → class-B
threshold voltage 1−
class-B → fast mute 1
−
−
V
hysteresis (Vth1+ − Vth1−
)
−
200
−
mV
2003 Feb 12
10
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
SYMBOL
PARAMETER
threshold voltage 2+
CONDITIONS
MIN.
TYP.
MAX.
4.2
UNIT
Vth2+
Vth2−
VstH2
class-B → class-H
class-H → class-B
−
−
−
V
V
threshold voltage 2−
3.3
−
−
hysteresis (Vth2+ − Vth1−
)
−
200
mV
PIN STAT AS OUTPUT
Ist(mute)
Vst(mute)
Ist(clB)
mute acknowledge sink current
mute acknowledge output voltage
class-B operation output current
class-B operation output voltage
class-H operation source current
class-H operation output voltage
threshold case temperature sensor
2.2
−
−
mA
V
Ist = 2.2 mA
Ist = 15 µA
−
−
0.5
−
15
−
µA
V
Vst(clB)
Ist(clH)
Vst(clH)
Tc(th)
Diagnostic output DIAG
2.0
−
3.0
−
−140
VP − 2.5
−
−
µA
V
Ist = −140 µA
−
−
120
−
°C
VDIAG
RL
output voltage
active LOW
−
−
0.6
−
V
load resistance for open load detection
threshold junction temperature sensor
100
−
−
Ω
Tj(th)
145
−
°C
on
fast mute
V
V
P
PH1
V
V
th+
th−
MGL267
Fig.6 Supply voltage transfer characteristic.
2003 Feb 12
11
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
on
mute
standby
V
V
msH2
msH1
V
ms
V
V
th2+
V
V
th1+
th2−
th1−
MGL268
Fig.7 Mode select transfer characteristic.
class-H
class-B
fast mute
V
V
stH2
stH1
V
st
V
V
th2+
V
V
th1+
th2−
th1−
MGL269
Fig.8 Status I/O transfer characteristic.
12
2003 Feb 12
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise
specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
class-B; THD = 10%
class-H; THD = 10%
class-H; THD = 0.5%
16
60
45
−
19
70
55
20
−
−
−
−
W
W
W
fro(h)(P)
THD
high frequency power roll-off Po (−1 dB); THD = 0.5%;
kHz
note 1
total harmonic distortion
Po = 1 W
−
0.03
0.06
2.1
26
−
−
−
%
Po = 20 W
DDD active
−
%
−
%
Gv
voltage gain
25
20
90
55
−
27
−
dB
kHz
kΩ
dB
dB
dB
fro(h)(G)
Zi(dif)
SVRR
high frequency gain roll-off
differential input impedance
Gv (−1 dB); note 2
−
150
63
210
−
supply voltage ripple
rejection
on and mute; note 3
standby; note 3
on; note 4
90
−
CMRR
common mode rejection
ratio
56
80
−
ISRR
Vn(o)
input signal rejection ratio
noise output voltage
mute; note 5
80
−
100
100
60
−
dB
µV
µV
on; note 6
150
−
mute; notes 6 and 7
−
Notes
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.
3. Supply voltage ripple rejection is measured across RL; ripple voltage Vripple(max) = 2 V (p-p).
4. Common mode rejection ratio is measured across RL; common mode voltage Vcm(max) = 2 V (p-p).
CMMR (dB) = differential gain (Gv) + common mode attenuation (αcm). Test set-up according to Fig.10; mismatch of
input coupling capacitors excluded.
5. Input signal rejection ratio is measured across RL; input voltage Vi(max) = 2 V (p-p). ISSR (dB) = different gain
(Gv) + mute attenuation (αm).
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage is independent of source impedance Rs.
2003 Feb 12
13
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
TEST AND APPLICATION INFORMATION
+ V
P
2200
100
nF
4700 µF
µF
V
V
C1−
C1+
P1
P2
10
3
5
9
CLASS-B
CLASS-H
FAST MUTE
16
4
LOAD DUMP
PROTECTION
TEMPERATURE
SENSOR
STAT
disable
CURRENT
PROTECTION
STANDBY
MUTE
ON
MODE
LIFT-SUPPLY
V
*
P
TDA1562
100 nF
1
+
7
PRE-
AMP
IN+
POWER-
STAGE
OUT+
−
+ V
1/2*R
s
75
kΩ
P
DIAGNOSTIC
INTERFACE
10
kΩ
R
=
audio
source
FEEDBACK
CIRCUIT
LOAD
DETECTOR
L
DYNAMIC
DISTORTION
DETECTOR
8
4 Ω
DIAG
75
kΩ
1/2*R
s
−
11
PRE-
POWER-
STAGE
100 nF
2
AMP
OUT−
+
IN−
V
*
10 µF
P
14
V
TEMPERATURE
PROTECTION
ref
LIFT-SUPPLY
15 kΩ
disable
reference
voltage
17
SGND
15
13
C2+
6
12
PGND2
C2−
PGND1
4700 µF
GND
MGL271
bnok,lfuapgedwith
Fig.9 Test and application circuit.
14
2003 Feb 12
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
+ V
P
9
10
supply
C
i
1
7
R
TDA1562
L
C
i
11
2
14
V
CM
SGND
17
PGND1 PGND2
12
6
GND
MGL270
Fig.10 CMRR test set-up.
2003 Feb 12
15
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
PACKAGE OUTLINES
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.8
4.3
0.4 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-12-16
99-12-17
SOT243-1
2003 Feb 12
16
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)
SOT577-2
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
Q
c
e
2
1
Z
17
w
e
M
1
M
v
L
1
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
1
e
E
h
j
L
L
1
Q
v
w
x
Z
2
p
h
2
4.6 0.75 0.48 24.0 20.0
4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 3.75 3.75
3.1 3.15 3.15
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 2.54
13.5
0.6
0.4
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
SOT577-2
01-01-05
2003 Feb 12
17
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)
SOT577-2
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
Q
c
e
2
1
Z
17
w
e
M
1
M
v
L
1
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
1
e
E
h
j
L
L
1
Q
v
w
x
Z
2
p
h
2
4.6 0.75 0.48 24.0 20.0
4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 3.75 3.75
3.1 3.15 3.15
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 2.54
13.5
0.6
0.4
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
SOT577-2
01-01-05
2003 Feb 12
18
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads
(row spacing 2.54 mm)
SOT668-2
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
Q
L
c
e
2
1
17
w
e
M
1
Z
L
1
v
M
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
Q
v
w
x
Z
2
p
h
1
2
h
1
4.6 0.75 0.48 24.0 20.0
4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 3.75 3.75
3.1 3.15 3.15
2.00
1.45
2.1
1.9
6
mm
10
2.54 1.27 2.54
13.5
0.6
0.4
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
SOT668-2
01-01-05
2003 Feb 12
19
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2003 Feb 12
20
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 12
21
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
2003 Feb 12
22
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
2003 Feb 12
23
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/02/pp24
Date of release: 2003 Feb 12
Document order number: 9397 750 09939
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