TDA1564TH [NXP]
High efficiency 2 X 25 W/4 stereo car radio power amplifier; 高效率2 X 25W / 4立体声汽车音响功率放大器
| 型号： | TDA1564TH |
| 厂家： | 
NXP |
| 描述： | High efficiency 2 X 25 W/4 stereo car radio power amplifier |
| 文件： | 总30页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1564
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
Preliminary specification
2004 Jan 27
Supersedes data of 2003 Sep 17
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
FEATURES
GENERAL DESCRIPTION
• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode
The TDA1564 is a monolithic power amplifier in a 17-lead
single-in-line (SIL) plastic power package. It contains two
identical 25 W amplifiers. The dissipation is minimized by
switching from SE to BTL mode, only when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.
• Differential inputs with high Common Mode Rejection
Ratio (CMRR)
• Mute/standby/operating (mode select pin)
• Load dump protection circuit
• Short-circuit safe to ground, to supply voltage and
across load
• Loudspeaker protection circuit
• Offset detection for each channel
• Device switches to single-ended operation at excessive
junction temperatures
• Thermal protection at high junction temperature (170°C)
• Clip detection at THD = 2.5 %
• Diagnostic information
(clip/protection/prewarning/offset).
QUICK REFERENCE DATA
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
DC biased
MIN.
6.0
TYP. MAX. UNIT
14.4
−
18
30
45
4
V
non-operating
load dump
−
V
−
−
V
IORM
Iq(tot)
Istb
repetitive peak output current
total quiescent current
standby current
−
−
A
RL = ∞
−
95
1
150
50
150
−
mA
µA
kΩ
W
−
Zi
input impedance
90
−
120
38
25
20
26
80
65
−
Po
output power
RL = 4 Ω; EIAJ
RL = 4 Ω; THD = 10 %
RL = 4 Ω; THD = 2.5 %
Po = 1 W
23
18
25
−
−
W
−
W
Gv
voltage gain
27
−
dB
dB
dB
mV
dB
dB
CMRR
SVRR
∆VO
αcs
common mode rejection ratio
supply voltage ripple rejection
DC output offset voltage
channel separation
f = 1 kHz; Rs = 0 Ω
f = 1 kHz; Rs = 0 Ω
45
−
−
100
−
Rs = 0 Ω; Po = 15 W
40
−
70
−
∆Gv
channel unbalance
1
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA1564TH
TDA1564J
HSOP20
DBS17P
plastic, heatsink small outline package; 20 leads; low stand-off height
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT418-3
SOT243-1
2004 Jan 27
2
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
BLOCK DIAGRAM
V
P1
V
P2
20
11
+
−
TDA1564TH
SLAVE
CONTROL
7
8
−
+
OUT2
OUT2
MUTE
−
+
13
14
−
+
IV
−
IN2
IN2
VI
+
−
+
VI
60
kΩ
60
kΩ
V
P
16
V
ref
CSE
25 kΩ
19
−
+
CIN
60
kΩ
60
kΩ
+
−
VI
18
17
−
+
IN1
+
−
+
−
VI
3
4
IN1
−
+
OUT1
IV
MUTE
1
n.c.
n.c.
−
+
10
OUT1
SLAVE
CONTROL
STANDBY
LOGIC
CLIP/PROTECTION
TEMP PREWARNING
OFFSET
DETECTION
2
15
12
9
5
6
mdb811
MODE
DIAG
OC1 OC2
GND1 GND2
Fig.1 Block diagram (TDA1564TH).
3
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
V
P1
V
P2
5
13
+
−
TDA1564J
SLAVE
CONTROL
10
11
−
+
OUT2
OUT2
MUTE
−
+
16
17
−
+
IV
−
IN2
IN2
VI
+
−
+
VI
60
kΩ
60
kΩ
V
P
4
V
ref
CSE
25 kΩ
3
−
+
CIN
60
kΩ
60
kΩ
+
−
VI
2
1
−
+
IN1
+
−
+
−
VI
7
8
IN1
−
+
OUT1
IV
MUTE
−
+
OUT1
SLAVE
CONTROL
STANDBY
LOGIC
CLIP/PROTECTION
TEMP PREWARNING
OFFSET
DETECTION
6
15
14
12
9
mgw244
MODE
DIAG
OC1 OC2
GND
Fig.2 Block diagram (TDA1564J).
4
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
PINNING
PIN
SYMBOL
DESCRIPTION
TDA1564TH
TDA1564J
n.c.
1
2
−
6
not connected
MODE
OUT1−
OUT1+
GND1
GND
GND2
OUT2−
OUT2+
OC2
mute/standby/operating
inverting output 1
non-inverting output 1
ground 1
3
7
4
8
5
−
−
9
ground
6
−
ground 2
7
10
11
12
−
inverting output 2
non-inverting output 2
offset capacitor 2
not connected
8
9
n.c.
10
11
12
13
14
15
16
17
18
19
20
VP2
13
14
16
17
15
4
supply voltage 2
offset capacitor 1
inverting input 2
non-inverting input 2
diagnostic
OC1
IN2−
IN2+
DIAG
CSE
electrolytic capacitor for single-ended (SE) mode
non-inverting input 1
IN1+
IN1−
CIN
1
2
inverting input 1
3
common input
VP1
5
supply voltage 1
2004 Jan 27
5
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
handbook, halfpage
+
−
1
2
IN1
IN1
3
CIN
4
CSE
V
5
P1
V
20
1
2
3
4
5
6
7
8
9
n.c.
P1
6
MODE
CIN 19
IN1− 18
IN1+ 17
CSE 16
DIAG 15
IN2+ 14
IN2− 13
OC1 12
MODE
OUT1−
OUT1+
GND1
GND2
OUT2−
OUT2+
OC2
−
7
OUT1
+
8
OUT1
TDA1564TH
9
GND
TDA1564J
−
+
10
11
12
13
14
15
16
17
OUT2
OUT2
V
P2
11
10 n.c.
OC2
V
P2
001aaa307
OC1
DIAG
−
+
IN2
IN2
MGW245
Fig.3 Pin configuration (TDA1564TH).
Fig.4 Pin configuration (TDA1564J).
FUNCTIONAL DESCRIPTION
The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 150 °C. In this case, the output power is limited to
5 W per amplifier.
The TDA1564 contains two identical amplifiers with
differential inputs. At low output power [up to output
amplitudes of 3 V (RMS) at VP = 14.4 V], the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.
The gain of each amplifier is internally fixed at 26 dB. The
device can be switched to the following modes via the
MODE pin:
With a sine wave input signal, the dissipation of a
conventional BTL amplifier (up to 2 W output power) is
more than twice the dissipation of the TDA1564 (see
Fig.12).
• Standby with low standby current (< 50 µA)
• Mute condition, DC adjusted
• On, operation.
In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Assuming that a music signal
has a normal (Gaussian) amplitude distribution, the
dissipation of a conventional BTL amplifier with the same
output power is approximately 70 % higher (see Figs 13
and 14.
The device is fully protected against a short-circuit of the
output pins to ground and to the supply voltage. It is also
protected against a short-circuit of the loudspeaker and
against high junction temperatures. In the event of a
permanent short-circuit condition to ground or the supply
voltage, the output stage will be switched off, causing low
dissipation. With a permanent short-circuit of the
2004 Jan 27
6
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
loudspeaker, the output stage will be repeatedly switched
on and off. The duty cycle in the ‘on’ condition is low
enough to prevent excessive dissipation.
– When a short-circuit occurs (for at least 10 ms) at the
outputs to ground or the supply voltage, the output
stages are switched off to prevent excessive
dissipation; the outputs are switched on again
approximately 500 ms after the short-circuit is
removed, during this short-circuit condition the
protection pin is LOW
The device also has two independent DC offset detection
circuits that can detect DC output voltages across the
speakers. With a DC offset greater than 2 V, a warning is
given on the diagnostic pin. There will be no internal
shutdown with DC offsets.
– When a short-circuit occurs across the load (for at
least 10 ms), the output stages are switched off for
approximately 500 ms; after this time, a check is
made to see whether the short-circuit is still present
When the supply voltage drops below 6 V (e.g. engine
start), the circuit mutes immediately, avoiding clicks from
the electronic circuit preceding the power amplifier.
– The power dissipation in any short-circuit condition is
very low.
The voltage of the SE electrolytic capacitor (pin 4) is kept
at 0.5VP by means of a voltage buffer (see Fig.2). The
value of this capacitor has an important influence on the
output power in SE mode, especially at low signal
frequencies. A high value is recommended to minimize
dissipation at low frequencies.
• During start-up/shutdown, when the product is internally
muted
• Temperature prewarning:
– A prewarning (junction temperature > 145 °C)
indicates that the temperature protection will become
active. The prewarning can be used to reduce the
input signal and thus reduce the power dissipation.
The diagnostic output is an open-collector output and
requires a pull-up resistor. It gives the following outputs:
• Clip detection at THD = 2.5 %
• Short-circuit protection:
• Offset detection:
– One of the channels has a DC output voltage greater
than 2 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VP supply voltage operating
MIN.
MAX.
18
UNIT
−
−
−
−
−
−
−
V
V
V
V
V
A
non-operating
30
load dump; tr > 2.5 ms
45
VP(sc)
Vrp
short-circuit safe voltage
reverse polarity voltage
repetitive peak output current
total power dissipation
storage temperature
18
6
IORM
Ptot
4
60
W
Tstg
Tvj
−55
−
+150
150
+85
°C
°C
°C
virtual junction temperature
ambient temperature
Tamb
−40
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-c)
Rth(j-a)
thermal resistance from junction to case
thermal resistance from junction to ambient
note 1
1.3
40
K/W
K/W
in free air
Note
1. The value of Rth(c-h) depends on the application (see Fig.5).
2004 Jan 27
7
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
virtual junction
OUT 1
handbook, halfpage
OUT 1
OUT 2
OUT 2
3.6 K/W
3.6 K/W
3.6 K/W
With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 6.5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 65 °C, Rth(vj-c) = 1.3 K/W and
3.6 K/W
0.6 K/W
0.6 K/W
Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink
150 – 65
2 × 6.5
should be:
– 1.3 – 0.2 = 5 K/W
----------------------
MGC424
0.1 K/W
Compared to a conventional BTL amplifier, the TDA1564
has a higher efficiency. The thermal resistance of the
heatsink should be:
case
145 – 65
2 × 6.5
1.7
– 1.3 – 0.2 = 9 K/W
----------------------
Fig.5 Thermal equivalent resistance network.
2004 Jan 27
8
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.9; unless otherwise specified.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
note 1; Fig.17
6.0
14.4
18.0
V
Iq(tot)
Istb
total quiescent current
standby current
RL = ∞; Fig.16
−
−
−
95
1
150
50
−
mA
µA
V
VCSE
average electrolytic capacitor
voltage at pin 4
7.1
∆VO
DC output offset voltage
on state
−
−
−
−
100
100
mV
mV
mute state
Mode select switch; see Fig.6
VMODE
voltage at mode select pin
standby condition
mute condition
on condition
0
2
4
−
−
1
V
−
3
V
5
VP
40
V
IMODE(sw)
Diagnostic
VDIAG
switch current through pin 6
VMODE = 5 V
25
µA
output voltage at the
diagnostic output pin
IDIAG = 2 mA; during any fault
condition or clip detect
−
−
−
2
0.5
−
V
IDIAG
current through the diagnostic during any fault condition or
pin
2
mA
V
clip detect
VO(DC)
DC output voltage detection
levels
1.4
2.5
Protection
Tpre
prewarning temperature
BTL disable temperature
−
−
145
150
−
−
°C
°C
Tdis(BTL)
note 2
Notes
1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V.
2. If the junction temperature exceeds 150 °C, the output power is limited to 5 W per channel.
2004 Jan 27
9
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
V
18
MODE
handbook, halfpage
(V)
Operating
4
3
2
1
0
Mute
Standby
MGR176
Fig.6 Switching levels of the mode select pin.
2004 Jan 27
10
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; CCSE = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.9; unless otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
THD = 0.5 %; Fig.18
MIN.
TYP.
19
MAX. UNIT
Po
15
23
−
−
−
−
−
−
−
W
W
W
W
W
%
W
Hz
THD = 10 %; Fig.18
EIAJ
25
38
16
20
0.1
VP = 13.2 V; THD = 0.5 %
VP = 13.2 V; THD = 10 %
Po = 1 W; note 1; Fig.19
−
−
THD
P
total harmonic distortion
power dissipation
−
see Figs 12 and 13
Bp
power bandwidth
THD = 1 %; Po = −1 dB with
−
20 to
−
respect to 15 W
15000
fro(l)
low frequency roll-off
−1 dB; note 2
−
25
−
−
Hz
fro(h)
Gv
high frequency roll-off
−1 dB
130
25
−
kHz
dB
closed-loop voltage gain
supply voltage ripple rejection
Po = 1 W; Fig.21
Rs = 0 Ω; Vripple = 2 V (p-p); Fig.22
on/mute
26
27
SVRR
45
45
70
90
−
65
−
−
dB
dB
dB
kΩ
%
standby; f = 100 Hz to 10 kHz
Rs = 0 Ω
−
CMRR
Zi
common mode rejection ratio
input impedance
90
120
1
−
150
−
∆Zi
mismatch in input impedance
SE to BTL switch voltage level
output voltage mute (RMS value)
noise output voltage
VSE-BTL
Vout
note 3
−
3
−
V
Vi = 1 V (RMS)
−
100
100
105
100
70
−
150
150
−
µV
µV
µV
µV
dB
dB
Vn(o)
on; Rs = 0 Ω; note 4
on; Rs = 10 kΩ; note 4
mute; note 5
−
−
−
150
−
αcs
channel separation
channel unbalance
Rs = 0 Ω; Po = 15 W; Fig.23
40
−
∆Gv
1
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine the low frequency roll-off).
3. The SE to BTL switch voltage level depends on the value of VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs.
2004 Jan 27
11
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
handbook, halfpage
I
o
10 µs
max
MGR177
handbook, halfpage
V
o
t
0
short-circuit
removed
max
short-circuit
to ground
DIAG
CLIP
0
t
500
ms
500
ms
500
ms
0
t
maximum current
short-circuit to supply pins
MGW246
Fig.7 Clip detection waveforms.
Fig.8 Protection waveforms.
2004 Jan 27
12
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
TEST AND APPLICATION INFORMATION
V
220 nF
2200 µF
P
V
5
V
P1
P2
13
TDA1564J
−
+
100 nF
3.9 Ω
OUT2−
10
0.5R
s
IN2− 16
100 nF
220 nF
4 Ω
11 OUT2+
3.9 Ω
−
+
0.5R
s
IN2+ 17
220 nF
60
60
kΩ
kΩ
V
ref
25 kΩ
4
CIN
3
2
CSE
1000 µF
10 µF
60
kΩ
60
kΩ
0.5R
0.5R
s
IN1−
+
−
7
8
OUT1−
220 nF
3.9 Ω
4 Ω
OUT1+
s
IN1+
1
100 nF
100 nF
3.9 Ω
+
−
220 nF
CLIP AND
DIAGNOSTIC
STANDBY
LOGIC
signal ground
power ground
6
12
14
15
9
MODE
OC2 OC1 DIAG
GND
22
µF
22
µF
V
R
ms
pu
V
logic
MGW247
Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection.
Fig.9 Application diagram (TDA1564J).
13
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
TDA1564J
TDA1565J
In1
RL
In2
2000
sgnd
sgnd
diag
GND
Mute
On
Out1
Out2
Off
V
P
MGW248
Dimensions in mm.
Fig.10 PCB layout (component side) for the application of Fig.9.
14
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
100 nF 100 nF
High efficiency
3.9 Ω
3.9 Ω
Cool
Power
In2
In1
220 nF
220 nF
17
1
220 nF
Continuous offset detection
GND
2.7 kΩ
4.7 kΩ 24 kΩ
3.9 Ω
100 nF
100 nF
Out2
Out1
V
P
MGW249
Dimensions in mm.
Fig.11 PCB layout (soldering side) for the application of Fig.9.
15
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
MGW250
MGW251
25
25
handbook, halfpage
handbook, halfpage
(1)
P
P
(W)
(W)
20
20
15
10
5
(1)
(2)
(2)
15
10
5
0
0
0
0
4
8
12
16
20
2
4
6
8
10
P
(W)
P
(W)
o
o
Input signal 1 kHz, sinusoidal; VP = 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1564.
(1) For a conventional BTL amplifier.
(2) For TDA1564.
Fig.12 Power dissipation as a function of output
power; sine wave driven.
Fig.13 Power dissipation as a function of output
power; pink noise through IEC-60268 filter.
2.2 µF
2.2 µF
470 nF
430 Ω
330 Ω
91
nF
68
nF
3.3
kΩ
3.3
kΩ
10
kΩ
input
output
MGC428
Fig.14 IEC-60268 filter.
2004 Jan 27
16
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
V
220 nF
2200 µF
P
V
5
V
P1
P2
13
TDA1564J
−
+
100 nF
3.9 Ω
OUT2−
10
IN2− 16
220 nF
100 nF
4 Ω
11 OUT2+
3.9 Ω
−
+
IN2+ 17
220 nF
60
60
kΩ
kΩ
V
ref
25 kΩ
4
CIN
3
2
CSE
1000 µF
10 µF
IEC-60268
FILTER
60
kΩ
60
kΩ
IN1−
220 nF
+
−
7
8
OUT1−
pink
noise
3.9 Ω
4 Ω
IN1+
220 nF
1
100 nF
100 nF
3.9 Ω
+
−
OUT1+
INTERFACE
OFFSET DIAG
signal ground
power ground
MS
6
12
14
15
9
MODE
OC2
OC1 DIAG
GND
22
µF
22
µF
R
V
pu
ms
V
logic
MGW252
Fig.15 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
2004 Jan 27
17
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
MGW253
MGW254
150
200
handbook, halfpage
handbook, halfpage
I
P
I
P
(mA)
(mA)
150
100
3
100
50
50
2
1
0
0
0
1
2
3
4
V
5
(V)
0
5
10
15
20
25
V
(V)
MODE
P
VP = 14.4 V
(1) Standby.
(2) Mute.
VMODE = 5 V; RI = ∞.
(3) Operating.
Fig.16 Quiescent current as a function of supply
voltage.
Fig.17 Supply current as a function of VMODE
.
MGW255
MGW256
2
40
10
handbook, halfpage
handbook, halfpage
P
o
THD + N
(W)
(1)
(2)
(%)
10
30
(3)
1
20
10
0
(1)
(2)
(3)
−1
10
−2
10
−2
−1
2
8
10
12
14
16
18
10
10
1
10
10
P
(W)
o
V
(V)
P
(1) TDH + N = 10 %.
(2) TDH + N = 2.5 %.
(3) TDH + N = 0.5 %.
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 kHz.
Fig.18 Output power as a function of supply
voltage.
Fig.19 THD + noise as a function of output power.
2004 Jan 27
18
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
MGW257
MGW258
10
28
handbook, halfpage
handbook, halfpage
G
v
(dB)
THD + N
(%)
26
(1)
1
24
22
(2)
−1
10
−2
10
20
10
2
3
4
5
2
3
4
5
6
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Po = 10 W.
(2) Po = 1 W.
Fig.20 THD + noise as a function of frequency.
Fig.21 Voltage gain as a function of frequency.
MGW259
MGW260
−20
−20
handbook, halfpage
handbook, halfpage
α
SVRR
(dB)
cs
(dB)
(1)
−40
−40
(1)
(2)
−60
−80
−60
−80
(2)
−100
−120
−100
−120
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Po2 = 10 W.
(2) Po2 = 1 W.
(1) On/Mute.
(2) Standby.
Fig.23 Channel separation as a function of
frequency.
Fig.22 SVRR as a function of frequency.
2004 Jan 27
19
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
MBH691
V
P
V
load
0
−V
P
V
P
V
master
1/2 V
P
0
V
P
V
slave
1/2 V
P
0
0
1
2
t (ms)
3
See Fig.9
Vload = V7 − V8 or V11 − V10
.
Vmaster = V7 or V11
.
Vslave = V8 or V10
.
Fig.24 Output waveforms.
20
2004 Jan 27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
APPLICATION NOTES
Advantages of high efficiency
1. Power conversion improvement (power supply):
Usually, the fact that the reduction of dissipation is
directly related to supply current reduction, is
neglected. One advantage is less voltage drop in the
whole supply chain. Another advantage is less stress
for the coil in the supply line. Even the adapter or
supply circuit remains cooler than before due to the
reduced heat dissipation in the whole chain because
more supply current will be converted into output
power.
V
= 14.4 V
handbook, halfpage
P
Power
dissipation
reduction of 40%
Supply
current
at P = 1.6 W
o
reduction of
32%
Same junction
temperature
Same heatsink
size
choice
2. Power dissipation reduction: This is the best known
advantage of high efficiency amplifiers.
3. Heatsink size reduction: The heatsink size of a
conventional amplifier may be reduced with
approximately 50 % at Vp = 14.4 V when the TDA1564
will be used. In that case, the maximum heatsink
temperature will remain the same.
Heatsink
size
reduction of
50%
Heatsink
temperature
reduction of
40%
MGS824
4. Heatsink temperature reduction: The power
dissipation and the thermal resistance of the heatsink
determine the heatsink temperature rise.
Fig.25 Heatsink design.
When the same heatsink size is used from a conventional
amplifier, the maximum heatsink temperature decreases
and also the maximum junction temperature, which
extends the life of this semiconductor device. The
maximum dissipation with music-like input signals
decreases by 40 %.
Advantage of the concept used by TDA1564
The TDA1564 is highly efficient under all conditions,
because it uses a single-ended capacitor to create a
non-dissipating half supply voltage. Other concepts rely on
the fact that both input signals are the same in amplitude
and phase. With the concept of a SE capacitor it means
that it doesn’t matter what kind of signal processing is done
on the input signals. For example, amplitude difference,
phase shift or delays between both input signals, or other
DSP processing, have no impact on the efficiency.
It is clear that the use of the TDA1564 saves a significant
amount of energy. The maximum supply current
decreases by approximately 32 %, that reduces the
dissipation in the amplifier as well as in the whole supply
chain. The TDA1564 allows a heatsink size reduction of
approximately 50 % or the heatsink temperature
decreases by 40 % when the heatsink size hasn’t been
changed.
2004 Jan 27
21
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
INTERNAL PIN CONFIGURATIONS
PIN
NAME
EQUIVALENT CIRCUIT
TDA1564TH
17, 18, 13, 14 1, 2, 16, 17
and 19 and 3
TDA1564J
IN1+, IN1−, IN2−,
IN2+ and CIN
V
V
P1, P2
V
V
P1, P2
17, 18, 13, 14
1, 2, 16, 17
J
19
3
MGR182
16
4
CSE
V
P2
16
4
TH
J
MGW261
2
6
MODE
TH
J
2
6
MGW262
2004 Jan 27
22
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
PIN
NAME
EQUIVALENT CIRCUIT
TDA1564TH
TDA1564J
7, 11
3, 8
OUT1−, OUT2+
V
V
P1, P2
3, 8 TH
7, 11
J
16 TH
4
J
MGR185
4, 7
8, 10
OUT1+, OUT2−
V
V
P1, P2
4, 7 TH
8, 10
J
16 TH
4
J
MGR186
9, 12
12, 14
OC1, OC2
V
P2
TH 9, 12
12, 14
J
MGW263
15
15
DIAG
V
P2
15
MGW264
2004 Jan 27
23
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
PACKAGE OUTLINES
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-3
E
A
D
x
X
c
y
E
H
2
v
M
A
E
D
1
D
2
10
1
pin 1 index
Q
A
A
2
(A )
3
E
1
A
4
θ
L
p
detail X
20
11
w
M
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
(1)
(2)
(2)
A
A
A
b
c
D
D
D
E
E
1
E
e
H
E
L
p
Q
v
w
x
y
Z
θ
UNIT
2
3
4
p
1
2
2
8°
0°
+0.08 0.53 0.32
−0.04 0.40 0.23
16.0 13.0 1.1 11.1 6.2
15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1
13.9 0.8
1.7
1.5
2.5
2.0
3.5
3.2
mm
1.27
3.5
0.35
0.25 0.25 0.03 0.07
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-02-12
03-07-23
SOT418-3
2004 Jan 27
24
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
h
x
D
E
h
view B: mounting base side
A
2
d
B
j
E
A
L
3
L
Q
c
2
v
M
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.8
4.3
0.4 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-17
03-03-12
SOT243-1
2004 Jan 27
25
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
SOLDERING
Introduction
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• below 225 °C (SnPb process) or below 245 °C (Pb-free
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended. Driven by legislation and environmental
forces the worldwide use of lead-free solder pastes is
increasing.
process)
– for all the BGA, HTSSON..T and SSOP-T packages
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a
volume ≥ 350 mm3 so called thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.
Through-hole mount packages
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
SOLDERING BY DIPPING OR BY SOLDER WAVE
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
MANUAL SOLDERING
• For packages with leads on two sides and a pitch (e):
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
The footprint must incorporate solder thieves at the
downstream end.
REFLOW SOLDERING
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
2004 Jan 27
26
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material
applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
MANUAL SOLDERING
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron
applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated
tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
MOUNTING
PACKAGE(1)
WAVE
REFLOW(2) DIPPING
Through-hole mount CPGA, HCPGA
suitable
−
suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL
PMFP(4)
suitable(3)
−
−
−
Through-hole-
surface mount
not suitable
not suitable
Surface mount
BGA, HTSSON..T(5), LBGA, LFBGA, SQFP,
SSOP-T(5), TFBGA, USON, VFBGA
not suitable
suitable
suitable
−
−
DHVQFN, HBCC, HBGA, HLQFP, HSO,
HSOP, HSQFP, HSSON, HTQFP, HTSSOP,
HVQFN, HVSON, SMS
not suitable(6)
PLCC(7), SO, SOJ
suitable
suitable
−
−
−
−
LQFP, QFP, TQFP
not recommended(7)(8) suitable
not recommended(9)
SSOP, TSSOP, VSO, VSSOP
CWQCCN..L(11), PMFP(10), WQCCN32L(11)
suitable
not suitable
not suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
4. Hot bar soldering or manual soldering is suitable for PMFP packages.
5. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
6. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
7. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
2004 Jan 27
27
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
8. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
10. Hot bar or manual soldering is suitable for PMFP packages.
11. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
2004 Jan 27
28
Philips Semiconductors
Preliminary specification
High efficiency 2 × 25 W/4 Ω
stereo car radio power amplifier
TDA1564
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jan 27
29
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R32/04/pp30
Date of release: 2004 Jan 27
Document order number: 9397 750 12613
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