TDA8010MDK-T [NXP]
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| 型号： | TDA8010MDK-T |
| 厂家： | 
NXP |
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INTEGRATED CIRCUITS
DATA SHEET
TDA8010M; TDA8010AM
Low power mixers/oscillators
for satellite tuners
1996 Oct 24
Objective specification
Supersedes data of 1996 Oct 08
File under Integrated Circuits, IC02
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M;
TDA8010AM
FEATURES
GENERAL DESCRIPTION
• Fully balanced mixer with common base input
• Wide input power and frequency range
• One-band 2 pin oscillator
The TDA8010M; TDA8010AM are integrated circuits that
perform the mixer/oscillator function in satellite tuners.
The devices include a gain controlled IF amplifier that can
directly drive two single-ended SAW filters or a differential
SAW filter using a three function switchable output.
They contain an internal LO prescaler and buffer that is
compatible with the input of a terrestrial or satellite
frequency synthesizer. They are also suitable for digital TV
tuners. These devices are available in small outline
packages that give the designer the capability to design an
economical and physically small satellite tuner.
• Local oscillator buffer and prescaler
• SAW filter IF preamplifier with gain control input and
switchable output
• Bandgap voltage stabilizer for oscillator stability
• External IF filter between the mixer output and the IF
amplifier input.
APPLICATIONS
• Down frequency conversion in DBS (Direct
Broadcasting Satellite) satellite receivers.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
4.5
TYP.
5.0
MAX.
5.5
UNIT
V
ICC
supply current
−
70
−
−
mA
MHz
MHz
dB
fRF
RF frequency range
oscillator frequency
mixer noise figure
maximum total gain
minimum total gain
700
1380
−
2150
fosc
−
2650
NFM
Gmax
Gmin
corrected for image
mixer plus IF
10
40
−17
−
−
−
−
dB
mixer plus IF
−
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8010M
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
TDA8010AM
1996 Oct 24
2
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
BLOCK DIAGRAM
(20) 1
SC
20 (1)
LOOUT2
DIVIDE-BY-2
PRE-SCALER
19 (2)
(19) 2
LOOUT1
STABILIZER
V
CCM
LO
BUFFER
18 (3)
(18) 3
(17) 4
(16) 5
(15) 6
(14) 7
LOGND
RFIN1
RFIN2
MGND
MOUT1
MOUT2
RF INPUT
STAGE
17 (4)
16 (5)
OSC2
OSC1
OSCILLATOR
15 (6)
14 (7)
OSCGND
IFOUT2
SWITCH
CONTROL
13 (8)
12 (9)
11 (10)
IF AMP
(13) 8
(12) 9
V
IFIN1
IFIN2
CC
OUTPUT
SWITCH
IFGND
R
TDA8010M
TDA8010AM
AGC
(11) 10
V
AGC
IFOUT1
CC
MGE506
The pin numbers given in parenthesis refer to the TDA8010AM.
Fig.1 Block diagram.
1996 Oct 24
3
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
PINNING
PINS
SYMBOL
DESCRIPTION
TDA8010M TDA8010AM
SC
1
2
20
19
18
17
16
15
14
13
12
11
10
9
IF output switch control
supply voltage for mixer
RF input 1
VCCM
RFIN1
RFIN2
MGND
MOUT1
MOUT2
IFIN1
3
4
RF input 2
5
ground for mixer
6
mixer output 1
7
mixer output 2
8
IF amplifier input 1
IF amplifier input 2
IF amplifier gain control input
IF amplifier output 1
ground for IF amplifier
supply voltage
IFIN2
9
AGC
10
11
12
13
14
15
16
17
18
19
20
IFOUT1
IFGND
VCC
8
IFOUT2
OSCGND
OSC1
7
IF amplifier output 2
ground for oscillator
6
5
oscillator tuning circuit input 1
oscillator tuning circuit input 2
ground for local oscillator buffer
local oscillator output 1
OSC2
4
LOGND
LOOUT1
LOOUT2
3
2
1
local oscillator output 2
handbook, halfpage
handbook, halfpage
SC
20 LOOUT2
LOOUT2
LOOUT1
LOGND
OSC2
20 SC
1
2
1
2
V
19 LOOUT1
18 LOGND
19 V
CCM
CCM
RFIN1
RFIN2
3
3
18 RFIN1
17
17
RFIN2
OSC2
4
4
MGND
MOUT1
MOUT2
IFIN1
16 OSC1
OSC1
16 MGND
15 MOUT1
5
5
TDA8010M
TDA8010AM
6
15 OSCGND
OSCGND
IFOUT2
6
IFOUT2
MOUT2
7
14
13
12
7
14
13 IFIN1
IFIN2
11 AGC
8
V
V
8
CC
CC
IFIN2
IFGND
IFGND
9
9
12
AGC
11 IFOUT1
IFOUT1
10
10
MGE504
MGE505
Fig.2 Pin configuration (TDA8010M).
Fig.3 Pin configuration (TDA8010AM).
1996 Oct 24
4
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
MIN.
−0.3
MAX.
+6.0
UNIT
supply voltage
maximum input voltage on all pins
V
Vi(max)
−0.3
−
VCC
10
V
Isource(max) maximum output source current
mA
s
tsc
maximum short-circuit time on all outputs
storage temperature
−
10
Tstg
Tj
−55
−
+150
150
+80
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
120
K/W
HANDLING
All pins withstand the ESD test in accordance with “UZW-BO/FQ-A302 (human body model)” and with
“UZW-BO/FQ-B302 (machine model)”.
1996 Oct 24
5
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP.
MAX.
UNIT
Supplies
VCC
ICC
supply voltage
4.75
5.0
5.25
V
supply current
60
70
80
mA
Mixer
fRF
NF
RF frequency range
700
−
−
2150
10
15
−
MHz
dB
dB
dB
dB
dB
dB
total noise figure (mixer plus IF); VAGC = 0.9VCC; fi = 920 MHz
not corrected for image
8
VAGC = 0.9VCC; fi = 2150 MHz
−
13
10
40
38
−30
GM
available power gain for mixer
RL = 2.2 kΩ
−
Gmax1
maximum total gain
(mixer + IFOUT1)
fi = 920 MHz; notes 1 and 2
fi = 2150 MHz; notes 1 and 2
notes 1 and 2
37
36
−
−
−
Gmin1
Gmax2
minimum total gain
(mixer + IFOUT1)
−14
maximum total gain
(mixer + IFOUT2)
fi = 920 MHz; notes 1 and 2
fi = 2150 MHz; notes 1 and 2
notes 1 and 2
36
35
−
39
−
dB
dB
dB
37
−
Gmin2
ZI(RF)
minimum total gain
(mixer + IFOUT2)
−30
−15
input impedance (Rs + Ls)
from 920 to 2150 MHz
fIF = 480 MHz
20
5
30
40
10
16
650
−
Ω
7.5
12
nH
kΩ
fF
ZO(RF)
output impedance (Rp//Cp)
(open collector)
8
450
−2
10
550
+2
IP3
IP2
third-order interception point
see Fig.4
dBm
dBm
second-order interception point see Fig.5
25
−
Local oscillator output
VLO
output voltage
RL = 50 Ω
87
90
93
dBµV
SRF
spurious signal on LO output
RL = 50 Ω; note 3
−
−35
−10
dB
with respect to LO output signal
LOleak
local oscillator leakage
RF input
−
−
−50
−35
−
−
dBm
dBm
IF output (mixer)
Oscillator
fosc
oscillator frequency range
VCC = 4.5 to 5.5 V;
1380
−
2650
MHz
Tamb = −20 to +80 °C
fosc(max)
fshift
maximum oscillator frequency
oscillator frequency shift
−
−
2700
−
MHz
kHz
VCC = 4.75 to 5.25 V;
at 2550 MHz
±350
±500
VCC = 4.75 to 5.25 V;
at 2650 MHz
−
±400
±600
kHz
fdrift
oscillator frequency drift
∆T = 25 °C; at 2550 MHz
∆T = 25 °C; at 2650 MHz
−
−
−8
−8
−15
−16
MHz
MHz
1996 Oct 24
6
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
SYMBOL
PARAMETER
CONDITIONS
at 100 kHz
MIN.
88
TYP.
92
MAX.
UNIT
dBc
ΦN
oscillator phase noise
−
−
at 10 kHz
62
69
dBc
IF amplifier
fIF
IF frequency range
maximum voltage gain
minimum voltage gain
IF noise figure
60
−
625
MHz
dB
dB
dB
dBµV
Ω
Gv(max)
Gv(min)
NFIF
VoIF
note 1
note 2
note 4
−
40
−30
8
−
−
−
−
−
output voltage level
output impedance
−
−
85
ZO(IF)
ZI(IF)
single-ended
−
50
33
7
−
input impedance (Rp//Lp)
30
36
Ω
5
9
nH
dB
V
SWiso
VSW
switch isolation
note 5
33
36
−
−
switch control voltage
IF1 on; IF2 off
IF1 off; IF2 on
differential output
see Fig.6
0.8VCC
VCC
0.2VCC
−
0.6VCC
0.07VCC
−
V
0
−
V
RI(AGC)
AGC input resistance
−
4
kΩ
Notes
1. Maximum gain: VAGC = 0.9VCC; fIF = 480 MHz; IF output single-ended.
2. Minimum gain: VAGC = 0.1VCC; fIF = 480 MHz; IF output single-ended.
3. RF input power range = −70 to −20 dBm.
4. VAGC = 0.9VCC; fIF = 480 MHz; Rsource = 100 Ω.
5. Switch isolation is defined at an IF output level of 77 dBµV; fIF = 480 MHz.
handbook, halfpage
REF
handbook, halfpage
IM2
IM3
LO − F1 LO − F2
(F1 + F2) − LO
2F1 − F2
390
F1
420
F2
450
2F2 − F1
480 (MHz)
FI
RF
478
964
480
962
484 (MHz)
1926 (MHz)
MGE507
MGE508
REF is the level if F1 or F2 were at 480 MHz.
IP3 = IM3/2 + input level.
IP2 = IM2 + input level.
Input level: 2 × −23 dBm.
Input level: 2 × −23 dBm.
Output level: 2 × 74 dBµV.
Output level: 2 × 74 dBµV.
Fig.4 IP3 measurement method.
Fig.5 IP2 measurement method.
1996 Oct 24
7
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
APPLICATION INFORMATION
GM5E09
b
1996 Oct 24
8
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.65
1.0
0.2
0.25
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1996 Oct 24
9
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1996 Oct 24
10
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 24
11
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