TDA8542TD-T [NXP]
IC 1.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16, Audio/Video Amplifier;
| 型号： | TDA8542TD-T |
| 厂家： | 
NXP |
| 描述： | IC 1.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16, Audio/Video Amplifier 消费电路 商用集成电路 音频放大器 视频放大器 光电二极管 |
| 文件： | 总20页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8542
2 × 1 W BTL audio amplifier
1998 Apr 01
Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
FEATURES
APPLICATIONS
• Flexibility in use
• Portable consumer products
• Personal computers
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
• Motor-driver (servo).
GENERAL DESCRIPTION
The TDA8542(T) is a two channel audio power amplifier
for an output power of 2 × 1 W with an 8 Ω load at a 5 V
supply. The circuit contains two BTL amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8542T comes in a 16 pin SO package and
the TDA8542 in a 16 pin DIP package.
• No switch-on/switch-off plops
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, VCC and across the
load
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP. MAX. UNIT
5
18
22
10
−
V
Iq
quiescent current
VCC = 5 V
−
15
−
mA
µA
W
Istb
standby current
−
Po
output power
THD = 10%; RL = 8 Ω; VCC = 5 V
1
1.2
0.15
−
THD
SVRR
total harmonic distortion
supply voltage ripple rejection
Po = 0.5 W
−
−
%
50
−
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8542T
TDA8542
SO16L plastic small outline package; 16 leads; body width 7.5 mm
DIP16 plastic dual in-line package; 16 leads (300 mil); long body
SOT162-1
SOT38-1
1998 Apr 01
2
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
BLOCK DIAGRAM
V
V
CCL CCR
16
9
−
15
14
OUTL−
INL−
−
+
13
INL+
R
V
CCL
R
−
−
+
2
20 kΩ
OUTL+
20 kΩ
STANDBY/MUTE LOGIC
TDA8542
−
10
11
INR−
OUTR−
−
+
12
INR+
R
V
CCR
R
−
−
+
7
20 kΩ
OUTR+
4
SVR
20 kΩ
3
MODE
STANDBY/MUTE LOGIC
5
BTL/SE
1
8
MGB975
LGND RGND
Fig.1 Block diagram.
3
1998 Apr 01
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
PINNING
FUNCTIONAL DESCRIPTION
The TDA8542(T) is a 2 × 1 W BTL audio power amplifier
capable of delivering 2 × 1 W output power to an 8 Ω load
at THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protection mechanism. The gain can be set
within a range from 6 dB to 30 dB by external feedback
resistors.
SYMBOL
LGND
PIN
DESCRIPTION
ground, left channel
1
2
OUTL+
MODE
SVR
positive loudspeaker terminal,
left channel
3
4
5
operating mode select (standby,
mute, operating)
half supply voltage, decoupling
ripple rejection
Power amplifier
BTL/SE
BTL loudspeaker or SE
headphone operation
The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.
n.c.
6
7
not connected
OUTR+
positive loudspeaker terminal,
right channel
RGND
VCCR
8
9
ground, right channel
supply voltage, right channel
OUTR−
10 negative loudspeaker terminal,
right channel
Mode select pin
INR−
INR+
INL+
11 negative input, right channel
12 positive input, right channel
13 positive input, left channel
14 negative input, left channel
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC − 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
INL−
OUTL−
15 negative loudspeaker terminal,
left channel
VCCL
16 supply voltage, left channel
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either on a logic HIGH level or not connected at all.
handbook, halfpage
LGND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CCL
OUTL+
MODE
SVR
OUTL−
INL−
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
not to ground, but to a voltage level of 1⁄2VCC (see Fig.13).
In this case the BTL/SE pin must be either on a logic LOW
level or connected to ground. If the BTL/SE pin is on a
LOW level, the power amplifier for the positive
INL+
TDA8542
BTL/SE
n.c.
INR+
INR−
OUTR+
OUTR−
loudspeaker terminal is always in mute condition.
RGND
V
CCR
MGB974
Fig.2 Pin configuration.
1998 Apr 01
4
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
−0.3
MAX.
UNIT
VCC
VI
+18
VCC + 0.3
1
V
input voltage
−0.3
−
V
IORM
Tstg
Tamb
Vpsc
Ptot
repetitive peak output current
storage temperature
A
non-operating
−55
−40
−
+150
+85
10
°C
°C
V
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
SO16L
DIP16
−
1.2
W
W
−
2.2
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference
Handbook”. The handbook can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air:
TDA8542T (SO16L)
100
55
K/W
K/W
TDA8542 (DIP16)
1998 Apr 01
5
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP.
MAX.
18
UNIT
operating
5
V
Iq
quiescent current
standby current
DC output voltage
RL = ∞; note 1
VMODE = VCC
note 2
−
15
−
22
10
−
mA
µA
V
Istb
VO
−
−
2.2
−
V
OUT+ − VOUT− differential output voltage offset
−
50
500
0.5
mV
nA
V
IIN+, IIN−
input bias current
−
−
VMODE
input voltage mode select
operating
mute
0
−
1.5
−
VCC − 1.5 V
standby
V
−
0
2
−
CC − 0.5 −
VCC
20
V
IMODE
VBS
input current mode select
input voltage BTL/SE pin
0 < VMODE < VCC
single-ended
BTL
−
−
−
−
µA
V
0.6
VCC
100
V
IBS
input current BTL/SE pin
VBS = 0
µA
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 0.5 × VCC
.
1998 Apr 01
6
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
AC CHARACTERISTICS
V
CC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Po output power THD = 10% 1.2
1
−
W
THD = 0.5%
Po = 0.5 W
note 1
0.6
−
0.9
0.15
−
−
W
THD
Gv
total harmonic distortion
closed loop voltage gain
differential input impedance
noise output voltage
0.3
30
−
%
6
dB
kΩ
µV
dB
dB
µV
dB
Zi
−
100
−
Vno
note 2
note 3
note 4
note 5
−
100
−
SVRR
supply voltage ripple rejection
50
40
−
−
−
−
Vo
output voltage in mute condition
channel separation
−
200
−
αcs
40
−
Notes
1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.
1998 Apr 01
7
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
TEST AND APPLICATION INFORMATION
Test conditions
SE application
Tamb = 25°C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The SE application diagram is illustrated in Fig.14.
If the BTL/SE pin (pin 5) is connected to ground, the
positive outputs (pins 2 and 7) will be in mute condition
with a DC level of 1⁄2VCC. When a headphone is used
(RL ≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 2) as
common pin.
The thermal resistance = 55 K/W for the DIP16; the
maximum sine wave power dissipation for Tamb = 25 °C is:
150 – 25
= 2.3 W
----------------------
55
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
= 1.7 W
----------------------
55
Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × Io) at low load
impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
BTL application
Tamb = 25°C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
General remark
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.
1998 Apr 01
8
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
BTL APPLICATION
V
CC
100 µF
R2
R1
50 kΩ
100 nF
1 µF
16
9
−
+
INL
14
13
−
+
OUTL
15
2
10 kΩ
INL
V
iL
C3
47 µF
R
L
OUTL
−
OUTR
50 kΩ
R4
R3
TDA8542
1 µF
−
+
INR
11
12
10 kΩ
−
+
OUTR
INR
10
7
V
iR
SVR
R
L
4
3
5
MODE
OUTR
BTL/SE
1
8
R2
Gain left = 2 × -------
R1
GND
MBH798
R4
R3
Gain right = 2 × -------
Fig.3 BTL application.
MGD891
MGD890
10
30
handbook, halfpage
handbook, halfpage
I
q
THD
(%)
(mA)
(2)
(1)
1
20
−1
10
10
−2
10
0
−2
−1
10
10
1
10
0
4
8
12
16
V
20
(V)
P
(W)
o
CC
f = 1 kHz, Gv = 20 dB.
(1) VCC = 5 V, RL = 8 Ω.
RI = ∞.
(2) VCC = 9 V, RL = 16 Ω.
Fig.4 Iq as a function of VCC
.
Fig.5 THD as a function of Po.
1998 Apr 01
9
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
MGD892
MGD893
10
−60
handbook, halfpage
handbook, halfpage
α
(dB)
cs
THD
(%)
(1)
(2)
−70
1
(1)
(2)
−80
−90
(3)
−1
10
−2
10
−100
2
3
5
4
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VCC = 5 V, Vo = 2 V, RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
Po = 0.5 W, Gv = 20 dB.
(1) CC = 5 V, RL = 8 Ω.
(2) VCC = 9 V, RL = 16 Ω.
(3) Gv = 6 dB.
V
Fig.7 Channel separation as a function of
frequency.
Fig.6 THD as a function of frequency.
MGD895
MGD894
−20
2.5
handbook, halfpage
handbook, halfpage
P
o
SVRR
(dB)
(W)
2
−40
−60
(1)
(2)
1.5
1
(1)
(2)
(3)
0.5
−80
0
0
2
3
4
5
10
10
10
10
10
4
8
12
f (Hz)
V
(V)
CC
VCC = 5 V, Rs = 0 Ω, Vr 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(1) THD = 10%, RL = 8 Ω.
(2) THD = 10%, RL = 16 Ω.
(3) Gv = 6 dB.
Fig.8 SVRR as a function of frequency.
Fig.9 Po as a function of VCC.
1998 Apr 01
10
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
MGD897
MGD896
3
3
handbook, halfpage
handbook, halfpage
(1)
(2)
P
(W)
P
(W)
2
1
2
1
(1)
(2)
0
0
0
0
0.5
1
1.5
2
2.5
4
8
12
V
(V)
P
(W)
CC
o
(1) RL = 8 Ω.
(2) RL = 16 Ω.
Sine wave of 1 kHz.
(1) VCC = 9 V, RL = 16 Ω.
(2) VCC = 5 V, RL = 8 Ω.
Fig.10 Worst case power dissipation as a function
of VCC
.
Fig.11 Pdis as a function of Po.
MGL070
MGD898
16
10
o
handbook, halfpage
handbook, halfpage
V
V
ms
(V)
1
(V)
12
−1
standby
10
−2
10
8
4
(1)
(2) (3)
−3
10
mute
−4
10
−5
10
operating
12 16
−6
10
0
0
−1
2
10
1
10
10
4
8
V
(V)
V
(V)
ms
P
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig.13 Vms as a function of VP.
Fig.12 Vo as a function of Vms
.
1998 Apr 01
11
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
SE APPLICATION
V
CC
R2
R1
100 kΩ
100 nF
100 µF
1 µF
16
9
−
+
INL
14
13
C4
10 kΩ
−
OUTL
INL
15
2
V
iL
C3
47 µF
470 µF
R
L
−
OUTR
+
−
OUTL
100 kΩ
R4
R3
TDA8542
1 µF
−
+
INR
11
12
4
10 kΩ
INR
C5
V
iR
OUTR
10
7
SVR
470 µF
R
L
+
MODE
OUTR
3
BTL/SE
5
1
8
R2
-------
R1
Gain left =
GND
MBH799
R4
-------
R3
Gain right =
Fig.14 Single-ended application.
MGD900
MGD899
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(2)
(3)
−1
10
(1)
−1
10
(2)
(3)
−2
10
−2
10
2
3
4
5
10
10
10
10
10
−2
−1
10
10
1
10
f (Hz)
P
(W)
o
f = 1 kHz, Gv = 20 dB.
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.15 THD as a function of Po.
Fig.16 THD as a function of frequency.
1998 Apr 01
12
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
MGD901
−20
handbook, halfpage
MGD902
−20
α
cs
handbook, halfpage
(dB)
SVRR
(dB)
−40
(1)
−40
−60
−60
−80
(2)
(3)
(1)
(2)
(4)
(5)
(3)
−100
2
3
4
5
10
10
10
10
10
−80
f (Hz)
2
3
4
5
Vo = 1 V, Gv = 20 dB.
(1) CC = 5 V, RL = 32 Ω, to buffer.
10
10
10
10
10
f (Hz)
V
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
(4) VCC = 12 V, RL = 16 Ω.
(5) VCC = 5 V, RL = 32 Ω.
VCC = 7.5 V, RL = 4 Ω,Rs = 0 Ω, Vr = 100 mV.
(1) Gv = 24 dB.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.17 Channel separation as a function of
frequency.
Fig.18 SVRR as a function of frequency.
MGD903
MGD904
2
handbook, halfpage
3
handbook, halfpage
P
o
(W)
1.6
P
(W)
(1)
(2)
(3)
2
(1)
(2)
(3)
1.2
0.8
1
0.4
0
0
0
0
4
8
12
16
4
8
12
16
V
(V)
CC
V
(V)
CC
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig.20 Worst case power dissipation as a function
of VCC
Fig.19 Po as a function of VCC
.
.
1998 Apr 01
13
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
MGD905
2.4
handbook, halfpage
P
(W)
(1)
1.6
0.8
(2)
(3)
0
0
0.4
0.8
1.2
1.6
P
(W)
o
Sine wave of 1 kHz.
(1) CC = 12 V, RL = 16 Ω.
V
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
Fig.21 Power dissipation as a function of Po.
1998 Apr 01
14
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
a. Top view.
+
V
GND
CC
100 µF
+
−
OUT1
OUT1
12 kΩ
100 nF
12 kΩ
56 kΩ
IN1
1
16
1 µF
1 µF
MODE
B/S
P3
11 kΩ
TDA8542
11 kΩ
56 kΩ
47 µF
8
9
IN2
+
−
OUT2
OUT2
MBH921
b. Component side.
Fig.22 Printed-circuit board layout (BTL and SE).
15
1998 Apr 01
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
PACKAGE OUTLINES
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
D
E
A
X
c
H
v
M
A
E
y
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
detail X
e
w
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
10.5
10.1
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
1.27
0.050
1.4
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.41
0.014 0.009 0.40
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT162-1
075E03
MS-013AA
1998 Apr 01
16
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.
max.
min.
max.
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
2.2
0.021
0.015
0.013
0.009
0.86
0.84
0.32
0.31
0.055
0.045
0.26
0.24
0.15
0.13
0.37
0.33
inches
0.19
0.020
0.15
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-10-02
95-01-19
SOT38-1
050G09
MO-001AE
1998 Apr 01
17
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1998 Apr 01
18
Philips Semiconductors
Product specification
2 × 1 W BTL audio amplifier
TDA8542
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Apr 01
19
Philips Semiconductors – a worldwide company
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Uruguay: see South America
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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/00/05/pp20
Date of release: 1998 Apr 01
Document order number: 9397 750 03353
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