TDA8542TS [NXP]
2 x 0.7 W BTL audio amplifier; 2 ×0.7 W¯¯ BTL音频放大器
| 型号： | TDA8542TS |
| 厂家： | 
NXP |
| 描述： | 2 x 0.7 W BTL audio amplifier |
| 文件： | 总20页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8542TS
2 × 0.7 W BTL audio amplifier
1998 Mar 25
Product specification
Supersedes data of 1997 Nov 17
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
FEATURES
GENERAL DESCRIPTION
• Flexibility in use
The TDA8542TS is a two channel audio power amplifier
for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V
supply. At a low supply voltage of 3.3 V an output power of
0.6 W with an 8 Ω load can be obtained. The circuit
contains two Bridge-Tied Load (BTL) amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8542TS is available in a SSOP20 package.
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
• No switch-on/switch-off plops
APPLICATIONS
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Portable consumer products
• Personal computers
• Outputs short-circuit safe to ground, VCC and across the
• Motor-driver (servo).
load
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP.
MAX.
18
UNIT
VCC
Iq
5
V
quiescent current
standby current
output power
VCC = 5 V
−
−
15
22
10
−
mA
µA
W
Istb
Po
−
THD = 10%; RL = 8 Ω; VCC = 3.3 V 0.45
THD = 10%; RL = 16 Ω; VCC = 5 V 0.6
0.55
0.7
0.15
−
−
W
THD
total harmonic distortion
Po = 0.4 W
−
−
%
SVRR
supply voltage ripple rejection
50
−
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8542TS
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1998 Mar 25
2
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
BLOCK DIAGRAM
V
V
CCL CCR
20
11
−
18
17
OUTL−
INL−
−
+
16
INL+
R
V
CCL
R
2
n.c.
n.c.
n.c.
n.c.
n.c.
7
9
−
−
+
12
19
3
20 kΩ
OUTL+
20 kΩ
STANDBY/MUTE LOGIC
TDA8542TS
−
13
14
15
INR−
INR+
OUTR−
−
+
R
V
CCR
R
−
8
20 kΩ
−
+
OUTR+
5
SVR
20 kΩ
4
6
MODE
STANDBY/MUTE LOGIC
BTL/SE
1
10
MBK445
LGND RGND
Fig.1 Block diagram.
3
1998 Mar 25
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
PINNING
SYMBOL
LGND
PIN
DESCRIPTION
ground, left channel
1
2
3
n.c.
not connected
OUTL+
positive loudspeaker terminal,
left channel
MODE
SVR
4
5
6
operating mode select (standby,
mute, operating)
handbook, halfpage
LGND
n.c.
1
2
20
V
CCL
half supply voltage, decoupling
ripple rejection
19 n.c.
BTL/SE
BTL loudspeaker or SE
headphone operation
OUTL+
MODE
SVR
3
18 OUTL−
17 INL−
16 INL+
15 INR+
14 INR−
4
n.c.
7
8
not connected
5
OUTR+
positive loudspeaker terminal,
right channel
TDA8542TS
BTL/SE
n.c.
6
n.c.
9
not connected
7
RGND
VCCR
n.c.
10 ground, right channel
11 supply voltage, right channel
12 not connected
OUTR+
n.c.
OUTR−
8
13
12
11
n.c.
9
RGND
V
10
CCR
OUTR−
13 negative loudspeaker terminal,
right channel
MBK453
INR−
INR+
INL+
14 negative input, right channel
15 positive input, right channel
16 positive input, left channel
17 negative input, left channel
INL−
OUTL−
18 negative loudspeaker terminal,
left channel
n.c.
19 not connected
Fig.2 Pin configuration.
VCCL
20 supply voltage, left channel
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and with a 16 Ω loudspeaker an output
power of 0.7 W can be delivered.
FUNCTIONAL DESCRIPTION
The TDA8542TS is a 2 × 0.7 W BTL audio power amplifier
capable of delivering 2 × 0.7 W output power to a 16 Ω
load at THD = 10% using a 5 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.
Mode select pin
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC − 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
1998 Mar 25
4
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
not to ground, but to a voltage level of 1⁄2VCC. See Fig.4 for
the application diagram. In this case the BTL/SE pin must
be either at a logic LOW level or connected to ground.
If the BTL/SE pin is at a LOW level, the power amplifier for
the positive loudspeaker terminal is always in mute
condition.
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either at a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
operating
MIN.
−0.3
MAX.
+18
UNIT
VCC
VI
supply voltage
input voltage
V
−0.3
−
VCC + 0.3
1
V
IORM
Tstg
Tamb
Vsc
repetitive peak output current
storage temperature
A
non-operating
−55
−40
−
+150
+85
°C
°C
V
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
10
Ptot
−
1.12
W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
Rth(j-a)
in free air
110(1)
K/W
Note
1. See Section “Thermal design considerations”.
Table 1 Maximum ambient temperature at different conditions
CONTINUOUS SINE WAVE DRIVEN
VCC
(V)
RL
(Ω)
Po
(W)
Pmax
(W)
Tamb(max)
(°C)
3.3
3.3
5
4
8
2 × 0.65
2 × 0.55
2 × 1.2
1.12
0.60
1.33
0.80
27(1)
84
(1)
8
−
5
16
2 × 0.70
62
Note
1. See Section “Thermal design considerations”.
1998 Mar 25
5
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP.
MAX.
18
UNIT
operating
5
V
Iq
quiescent current
standby current
DC output voltage
RL = ∞; note 1
VMODE = VCC
note 2
−
15
−
22
10
−
mA
µA
V
Istb
VO
−
−
2.2
−
V
OUT+ − VOUT− differential output voltage offset
−
50
500
0.5
mV
nA
V
IIN+, IIN−
input bias current
−
−
VMODE
input voltage mode select
operating
mute
0
−
1.5
−
VCC − 1.5 V
standby
V
−
0
2
−
CC − 0.5 −
VCC
20
V
IMODE
input current mode select
input voltage BTL/SE pin
0 < VMODE < VCC
single-ended
BTL
−
−
−
−
µA
V
VBTL/SE
0.6
VCC
100
V
IBTL/SE
input current BTL/SE pin
VBTL/SE = 0
µA
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 1⁄2VCC
.
1998 Mar 25
6
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
AC CHARACTERISTICS
V
CC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Po output power at VCC = 5 V
THD = 10%; RL = 8 Ω
THD = 10%; RL = 16 Ω
THD = 0.5%; RL = 8 Ω
THD = 0.5%; RL = 16 Ω
at VCC = 3.3 V
−
−
−
−
1.2
−
W
0.70
0.9
−
−
−
W
W
W
0.5
THD = 10%; RL = 4 Ω
THD = 10%; RL = 8 Ω
THD = 0.5%; RL = 4 Ω
THD = 0.5%; RL = 8 Ω
Po = 0.4 W
−
−
−
−
−
6
−
−
0.65
0.55
0.45
0.38
0.15
−
−
W
−
W
−
W
−
W
THD
Gv(cl)
Zi(dif)
Vn(o)
total harmonic distortion
closed-loop voltage gain
differential input impedance
noise output voltage
0.3
30
−
%
note 1
dB
kΩ
µV
dB
dB
µV
dB
100
−
note 2
note 3
note 4
note 5
100
−
SVRR
supply voltage ripple rejection
50
40
−
−
−
−
Vo(mute)
output voltage in mute condition
channel separation
−
200
−
αcs
40
−
Notes
R2
R1
1. Gain of the amplifier is 2 ×
in test circuit of Fig.3.
-------
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.
1998 Mar 25
7
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
TEST AND APPLICATION INFORMATION
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The thermal resistance = 110 K/W for the SSOP20; the
maximum sine wave power dissipation for Tamb = 25 °C is:
150 – 25
110
= 1.14 W
----------------------
SE application
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
T
amb = 25°C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
= 0.82 W
----------------------
110
The SE application diagram is illustrated in Fig.14.
Thermal design considerations
If the BTL/SE pin (pin 6) is connected to ground, the
positive outputs (pins 3 and 8) will be in mute condition
with a DC level of 1⁄2VCC. When a headphone is used
(RL ≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 3) as
common pin. The channel separation will be less in
comparison with the application using a coupling capacitor
connected to ground.
The ‘measured’ thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. Data may not be comparable between
different semiconductor manufacturers because the
application boards and test methods are not (yet)
standardized. Also, the thermal performance of packages
for a specific application may be different than presented
here, because the configuration of the application boards
(copper area) may be different. Philips Semiconductors
uses FR-4 type application boards with 1 oz copper traces
with solder coating.
Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × Io) at low load
impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The SSOP package has improved thermal conductivity
which reduces the thermal resistance. Using a practical
PCB layout (see Fig.22) with wider copper tracks to the
corner pins and just under the IC, the thermal resistance
from junction to ambient can be reduced to approximately
80 K/W. For Tamb = 60 °C the maximum total power
150 – 60
dissipation for this PCB layout is:
= 1.12 W
----------------------
80
General remark
BTL application
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.
Tamb = 25°C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
1998 Mar 25
8
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
BTL APPLICATION
V
CC
R2
R1
50 kΩ
100 nF
100 µF
1 µF
20
11
−
+
INL
17
16
−
+
OUTL
18
3
10 kΩ
INL
V
iL
C3
47 µF
R
L
OUTL
−
OUTR
50 kΩ
R4
R3
TDA8542TS
1 µF
−
+
INR
14
15
10 kΩ
−
+
OUTR
INR
13
8
V
iR
SVR
R
L
5
4
6
MODE
OUTR
R2
Gain left = 2 × -------
R1
BTL/SE
1
10
R4
Gain right = 2 × -------
R3
GND
MBK443
Pins 2, 7, 9, 12 and 19 are not connected.
Fig.3 BTL application.
MGD890
MBK446
30
10
handbook, halfpage
handbook, halfpage
I
q
THD
(%)
(mA)
1
20
−1
10
10
−2
10
0
−2
−1
10
10
1
10
0
4
8
12
16
V
20
(V)
P
(W)
o
CC
RL = ∞.
f = 1 kHz; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.
Fig.4 Iq as a function of VCC
.
Fig.5 THD as a function of Po.
1998 Mar 25
9
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MBK447
MGD893
10
−60
handbook, halfpage
handbook, halfpage
α
(dB)
cs
THD
(%)
(1)
(2)
−70
1
−80
−90
(3)
−1
10
−2
10
−100
2
3
5
4
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VCC = 5 V, Vo = 2 V, RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Po = 0.5 W; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.
Fig.7 Channel separation as a function of
frequency.
Fig.6 THD as a function of frequency.
MBK448
MGD894
2.5
−20
handbook, halfpage
handbook, halfpage
P
o
SVRR
(dB)
(W)
2
−40
−60
1.5
1
(1)
(2)
(3)
(1)
(2)
0.5
−80
0
0
2
3
4
5
10
10
10
10
10
4
8
12
f (Hz)
V
(V)
CC
VCC = 5 V, Rs = 0 Ω, Vr = 100 mV.
(1) Gv = 30 dB.
THD = 10%.
(2) Gv = 20 dB.
(1) RL = 8 Ω.
(2) RL = 16 Ω.
(3) Gv = 6 dB.
Fig.8 SVRR as a function of frequency.
Fig.9 Po as a function of VCC.
1998 Mar 25
10
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MBK450
MBK449
3
3
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
2
1
2
(2)
(1)
1
0
0
0
0.5
1
1.5
2
2.5
0
4
8
12
V
(V)
P
(W)
CC
o
(1) RL = 8 Ω.
(2) RL = 16 Ω.
Sine wave of 1 kHz; VCC = 5 V; RL = 8 Ω.
Fig.10 Worst case power dissipation as a function
of VCC
.
Fig.11 P as a function of Po.
MGL210
MGD898
10
o
(V)
1
16
handbook, halfpage
handbook, halfpage
V
V
MODE
(V)
12
−1
standby
10
−2
10
8
4
(1)
(2) (3)
−3
10
mute
−4
10
−5
10
operating
12 16
−6
10
0
0
−1
2
10
1
10
10
4
8
V
(V)
ms
V
(V)
P
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig.12 Vo as a function of Vms
.
Fig.13 VMODE as a function of VP.
1998 Mar 25
11
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
SE APPLICATION
V
CC
100 µF
R2
R1
100 kΩ
100 nF
1 µF
20
11
−
+
INL
17
16
C4
10 kΩ
−
OUTL
INL
18
3
V
iL
C3
47 µF
470 µF
R
L
= 8 Ω
−
OUTR
+
−
OUTL
100 kΩ
R4
R3
TDA8542TS
1 µF
−
+
INR
14
15
5
10 kΩ
INR
C5
V
iR
OUTR
13
8
SVR
470 µF
R
L
= 8 Ω
+
MODE
OUTR
4
BTL/SE
6
1
10
R2
-------
R1
Gain left =
R4
-------
R3
GND
MBK444
Gain right =
Pins 2, 7, 9, 12 and 19 are not connected.
Fig.14 Single-ended application.
MGD900
MGD899
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(2)
−1
−1
(3)
10
10
(1)
(2)
(3)
−2
−2
10
10
2
3
4
5
−2
−1
10
10
10
10
10
10
10
1
10
f (Hz)
P
(W)
o
f = 1 kHz, Gv = 20 dB.
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.15 THD as a function of Po.
Fig.16 THD as a function of frequency.
1998 Mar 25
12
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MGD901
−20
handbook, halfpage
MGD902
α
(dB)
cs
−20
handbook, halfpage
−40
SVRR
(dB)
(1)
−40
−60
−60
(2)
(1)
(2)
(3)
(4)
(5)
−80
(3)
−100
2
3
4
5
10
10
10
10
10
f (Hz)
−80
2
3
4
5
10
10
10
10
10
Vo = 1 V, Gv = 20 dB.
(1) CC = 5 V, RL = 32 Ω, to buffer.
f (Hz)
V
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
(4) VCC = 12 V, RL = 16 Ω.
(5) VCC = 5 V, RL = 32 Ω.
RS = 0 Ω, Vripple = 100 mV.
(1) Gv = 24 dB.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.17 Channel separation as a function of
frequency.
Fig.18 SVRR as a function of frequency.
MBK451
MBK452
2
3
handbook, halfpage
handbook, halfpage
P
o
(W)
1.6
P
(W)
(1)
2
1
(2)
(3)
(2)
(1)
1.2
0.8
(3)
0.4
0
0
0
0
4
8
12
16
4
8
12
16
V
(V)
V
(V)
CC
CC
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig.20 Worst case power dissipation as a function
of VCC
Fig.19 Po as a function of VCC
.
.
1998 Mar 25
13
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MGD905
2.4
handbook, halfpage
P
(W)
(1)
1.6
(2)
(3)
0.8
0
0
0.4
0.8
1.2
1.6
P
(W)
o
f = 1 kHz.
(1)
VCC = 12 V, RL = 16 Ω.
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
Fig.21 P as a function of Po.
1998 Mar 25
14
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
a. Top view copper layout.
+V
GND
CC
TDA
8542TS
8547TS
−OUT1
+OUT1
100 µF
10 kΩ
100 nF
56 kΩ
10 kΩ
IN1
1 µF
MODE
20
1
11 kΩ
11 kΩ
47 µF
11
10
TDA
8542/47TS
SELECT
IN2
56 kΩ
CIC
Nijmegen
1 µF
−OUT2
+OUT2
MGK997
b. Top view components layout.
Fig.22 Printed-circuit board layout (BTL).
15
1998 Mar 25
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.25
0.65
1.0
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1998 Mar 25
16
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1998 Mar 25
17
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.8
1998 Mar 25
18
Philips Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
NOTES
1998 Mar 25
19
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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
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Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/25/02/pp20
Date of release: 1998 Mar 25
Document order number: 9397 750 03351
相关型号：
TDA8547TS-T
IC 1.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO20, 4.40 MM, PLASTIC, MO-152, SOT266-1, SSOP-20, Audio/Video Amplifier
NXP
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