TDA8543T/N1,118 [NXP]
TDA8543 - 2 W BTL audio amplifier SOP 16-Pin;
| 型号： | TDA8543T/N1,118 |
| 厂家： | 
NXP |
| 描述： | TDA8543 - 2 W BTL audio amplifier SOP 16-Pin 放大器 光电二极管 商用集成电路 |
| 文件： | 总19页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8543
2 W BTL audio amplifier
Product specification
1997 Jun 12
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
FEATURES
GENERAL DESCRIPTION
• Flexibility in use
The TDA8543(T) is a one channel audio power amplifier
for an output power of 2 W with an 8 Ω load at a 7.5 V
supply. The circuit contains a BTL amplifier with
a complementary PNP-NPN output stage and
standby/mute logic. The TDA8543T comes in a 16 pin
SO package and the TDA8543 in a 16 pin DIP package.
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
APPLICATIONS
• No switch-on/switch-off plops
• Portable consumer products
• Personal computers
• Telephony.
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, VCC and across
the load
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP. MAX. UNIT
5
8
−
18
12
10
V
Iq
quiescent current
standby current
output power
VCC = 5 V
−
−
mA
μA
Istb
Po
THD = 10%
RL = 8 Ω; VCC = 5 V
RL = 8 Ω; VCC = 7.5 V
RL = 16 Ω; VCC = 9 V
Po = 0.5 W
1
1.2
2.2
2.0
0.15
−
−
−
−
−
−
W
W
W
%
−
−
THD
total harmonic distortion
−
SVRR
supply voltage ripple rejection
50
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8543T
TDA8543
SO16
plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
SOT38-1
DIP16 plastic dual in-line package; 16 leads (300 mil); long body
1997 Jun 12
2
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
BLOCK DIAGRAM
handbook, halfpage
TDA8543
−
11
6
OUT−
IN−
IN+
−
+
5
R
12
V
R
CC
−
−
+
14
20 kΩ
OUT+
4
3
SVR
20 kΩ
MODE
STANDBY/MUTE LOGIC
13
GND
MGK402
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
1
DESCRIPTION
not connected
not connected
n.c.
n.c.
2
MODE
3
operating mode select (standby,
mute, operating)
handbook, halfpage
n.c.
n.c.
1
2
3
4
5
6
7
8
16
n.c.
15
14
13
12
11
10
9
n.c
SVR
4
half supply voltage, decoupling
ripple rejection
MODE
SVR
IN+
OUT+
GND
IN+
5
6
positive input
TDA8543
IN−
negative input
V
CC
n.c.
7
not connected
IN−
OUT−
n.c.
n.c.
8
not connected
n.c.
n.c.
9
not connected
n.c
n.c.
n.c.
10
11
12
13
14
15
16
not connected
OUT−
VCC
GND
OUT+
n.c.
negative loudspeaker terminal
supply voltage
MGK401
ground
positive loudspeaker terminal
not connected
Fig.2 Pin configuration.
n.c.
not connected
1997 Jun 12
3
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
FUNCTIONAL DESCRIPTION
The voltage loss on the positive supply line is
the saturation voltage of a PNP power transistor,
on the negative side the saturation voltage of an
NPN power transistor.
The TDA8543(T) is a BTL audio power amplifier capable
of delivering an output power between 1 and 2 W,
depending on supply voltage, load resistance
and package. Using the MODE pin the device can
be switched to standby and mute condition. The device
is protected by an internal thermal shutdown protection
mechanism.
Mode select pin
The device is in standby mode (with a very low current
consumption) if the voltage at the MODE
pin is >(VCC − 0.5 V), or if this pin is floating. At a MODE
voltage level of less than 0.5 V the amplifier is fully
operational.
The gain can be set within a range from 6 dB to 30 dB
by external feedback resistors.
Power amplifier
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output, caused by charging of
the input capacitor.
The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.3
MAX.
+18
UNIT
operating
V
VI
input voltage
−0.3
−
VCC + 0.3
1
V
IORM
Tstg
Tamb
Vpsc
Ptot
repetitive peak output current
storage temperature
A
non-operating
−55
−40
−
+150
+85
10
°C
°C
V
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
SO16
DIP16
−
1.2
W
W
−
2.2
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference
Handbook”. The handbook can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
TDA8543T (SO16)
CONDITIONS
in free air
VALUE
UNIT
100
55
K/W
K/W
TDA8543 (DIP16)
1997 Jun 12
4
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
MGK410
2.5
handbook, halfpage
P
(W)
2.0
1.5
1
(1)
(2)
0.5
0
0
40
80
120
T
160
(°C)
amb
(1) DIP16.
(2) SO16.
Fig.3 Power derating curve.
Table 1
CONTINUOUS SINE WAVE DRIVEN
VCC (V)
RL (Ω)
Po (W)(1)
Tamb(max) (°C)
P
max (W)
SO16
DIP16
5
7.5
7.5
9
8
1.2
2.2
1.4
2.0
1.3
0.7
1.6
0.9
1.3
0.9
80
−
112
62
8
16
16
25
60
−
100
78
9
60
100
Note
1. At THD = 10%; BTL.
1997 Jun 12
5
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; G = 20 dB; measured in test circuit Fig.4; unless otherwise specified.
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
2.2
TYP.
MAX.
18
UNIT
5
8
−
V
Iq
quiescent current
standby current
DC output voltage
RL = ∞; note 1
VMODE = VCC
note 2
−
12
10
−
mA
μA
V
Istb
VO
−
−
2.2
−
⎪VOUT+ − VOUT−⎪ differential output voltage offset
−
50
500
0.5
mV
nA
V
IIN+, IIN−
VMODE
input bias current
−
−
input voltage mode select
operating
mute
0
−
1.5
−
VCC − 1.5 V
standby
VCC − 0.5
−
VCC
20
V
IMODE
input current mode select
0 < VMODE < VCC
−
−
μA
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 0.5 × VCC
.
AC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; G = 20 dB; measured in test circuit Fig.4; unless otherwise
specified.
SYMBOL
PARAMETER
output power
CONDITIONS
THD = 10%;
MIN.
TYP.
MAX.
UNIT
Po
VCC = 5 V; RL = 8 Ω
VCC = 7.5 V; RL = 8 Ω
VCC = 9 V; RL = 16 Ω
THD = 0.5%;
1
−
−
1.2
−
−
−
W
2.2
2.0
W
W
VCC = 5 V; RL = 8 Ω
VCC = 7.5 V; RL = 8 Ω
VCC = 9 V; RL = 16 Ω
Po = 0.5 W
0.6
−
0.9
1.7
1.4
0.15
−
−
−
−
W
W
−
W
THD
Gv
total harmonic distortion
closed loop voltage gain
differential input impedance
noise output voltage
−
0.3
30
−
%
note 1
6
dB
kΩ
μV
dB
dB
μV
Zi
−
100
−
Vno
note 2
note 3
note 4
−
100
−
SVRR
supply voltage ripple rejection
50
40
−
−
−
−
Vo
output voltage in mute condition note 5
−
200
1997 Jun 12
6
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
Notes to the AC characteristics
R2
R1
-------
1. Gain of the amplifier is 2 ×
in test circuit of Fig.4.
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with
a source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied
to the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including
noise.
TEST AND APPLICATION INFORMATION
Test conditions
SE application
Tamb = 25 °C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
Because the application can be either Bridge Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The SE application diagram is shown in Fig.14.
The thermal resistance = 55 K/W for the DIP16 envelope;
the maximum sine wave power dissipation
for Tamb = 25 °C is:
The capacitor value of C3 in combination with the load
impedance determines the low frequency behaviour.
The total harmonic distortion as a function of frequency
was measured with low-pass filter of 80 kHz. The value
of capacitor C2 influences the behaviour of the SVRR
at low frequencies, increasing the value of C2 increases
the performance of the SVRR.
150 – 25
= 2.27 W
----------------------
55
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
= 1.63 W
----------------------
55
General remark
The frequency characteristic can be adapted
by connecting a small capacitor across the feedback
resistor. To improve the immunity of HF radiation in radio
circuit applications, a small capacitor can be connected
in parallel with the feedback resistor; this creates a
low-pass filter.
See the power derating curve illustrated in Fig.3.
BTL application
Tamb = 25 °C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is shown in Fig.4.
The quiescent current has been measured without
any load impedance. The total harmonic distortion
as a function of frequency was measured with a low-pass
filter of 80 kHz. The value of capacitor C2 influences
the behaviour of the SVRR at low frequencies, increasing
the value of C2 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels
of the mute and standby respectively depends
on the supply voltage level.
1997 Jun 12
7
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
BTL APPLICATION
V
CC
100 μF
R2
R1
56 kΩ
100 nF
12
C1
−
+
IN
6
5
4
3
−
+
OUT
OUT
11
14
11 kΩ
1 μF
IN
R
V
TDA8543
L
SVR
in
MODE
C2
47 μF
13
GND
MGK403
R2
-------
Gain = 2 ×
R1
Fig.4 BTL application.
MGD876
MGK404
10
15
handbook, halfpage
handbook, halfpage
I
q
THD
(%)
(mA)
(1)
(3) (2)
10
1
−1
5
10
10
−2
0
0
−2
−1
4
8
12
16
20
(V)
10
10
1
10
P
o
(W)
V
CC
f = 1 kHz, Gv = 20 dB.
(1) VCC = 5 V, RL = 8 Ω.
(2) CC = 7.5 V, RL = 8 Ω.
(3) VCC = 9 V, RL = 16 Ω.
V
RL = ∞.
Fig.5 Iq as a function of VCC
.
Fig.6 THD as a function of Po.
1997 Jun 12
8
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
MGD879
MGK409
10
−20
handbook, halfpage
handbook, halfpage
SVRR
(dB)
THD
(%)
−40
−60
1
(1)
(1)
(3)
(2)
(3)
(2)
−1
10
−2
−80
10
2
3
4
5
2
3
5
4
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Po = 0.5 W, Gv = 20 dB.
VCC = 5 V, 8 Ω, Rs = 0 Ω, Vr = 100 mV.
(1) Gv = 30 dB.
(1) VCC = 5 V, RL = 8 Ω.
(2)
VCC = 7.5 V, RL = 8 Ω.
(2) Gv = 20 dB.
(3) VCC = 9 V, RL = 16 Ω.
(3) Gv = 6 dB.
Fig.7 THD as a function of frequency.
Fig.8 SVRR as a function of frequency.
MGK406
MGK405
2
2.5
handbook, halfpage
handbook, halfpage
P
o
P
(W)
2
(W)
1.5
1
(1)
(2)
1.5
1
(1)
(2)
(3)
(3)
0.5
0.5
0
0
0
0
4
8
12
4
8
12
V
(V)
V
(V)
CC
CC
THD = 10%.
(1) RL = 8 Ω.
(2) RL = 16 Ω.
(1) RL = 8 Ω.
(2)
RL = 16 Ω.
(3) RL = 25 Ω.
(3) RL = 25 Ω.
Fig.10 Worst case power dissipation as a function
of VCC
Fig.9 Po as a function of VCC
.
.
1997 Jun 12
9
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
MGK407
MGD883
2
10
o
handbook, halfpage
handbook, halfpage
V
P
(W)
(V)
1
(3)
(1)
1.6
−1
10
1.2
0.8
0.4
0
−2
10
(1)
(2) (3)
−3
10
(2)
−4
10
−5
10
−6
10
−1
2
10
1
10
10
0
0.5
1
1.5
2
2.5
V
(V)
P
(W)
ms
o
Sine wave of 1 kHz.
Band-pass = 22 Hz to 22 kHz.
(1) CC = 3 V.
(1) VCC = 9 V, RL = 16 Ω.
V
(2)
VCC = 5 V, RL = 8 Ω.
(2) VCC = 5 V.
(3) VCC = 12 V.
(3) VCC = 7.5 V, RL = 8 Ω.
Fig.11 P as a function of Po.
Fig.12 Vo as a function of Vms.
MGL070
16
handbook, halfpage
V
ms
(V)
12
standby
8
4
mute
operating
12 16
0
0
4
8
V
(V)
P
Fig.13 Vms as a function of VP.
1997 Jun 12
10
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
SE APPLICATION
V
CC
100 μF
R2 110 kΩ
100 nF
C3
12
C1
R1
−
+
IN
6
5
4
3
11 kΩ
1 μF
−
+
OUT
OUT
IN
11
14
V
TDA8543
SVR
470 μF
in
R
L
MODE
C2
47 μF
13
GND
MGK408
R2
-------
Gain =
R1
Fig.14 SE application.
MGD885
MGD884
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
(2)
(3)
−1
−1
10
10
(2)
(3)
−2
−2
10
10
−2
−1
2
3
4
5
10
10
1
10
10
10
10
10
10
f (Hz)
P
(W)
o
f = 1 kHz, Gv = 20 dB.
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.15 THD as a function of Po.
Fig.16 THD as a function of frequency.
1997 Jun 12
11
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
MGD886
MGD887
−20
2
handbook, halfpage
handbook, halfpage
P
o
(W)
1.6
SVRR
(dB)
−40
(3)
(1)
(2)
1.2
0.8
(1)
(2)
−60
(3)
0.4
−80
0
0
2
3
4
5
10
10
10
10
10
4
8
12
16
f (Hz)
V
(V)
CC
VCC = 7.5 V, RL = 4 Ω, Rs = 0 Ω, Vi = 100mV.
(1) Gv = 24 dB.
(1) THD = 10%, RL = 4 Ω.
(2) THD = 10%, RL = 8 Ω.
(3) THD = 10%, RL = 16 Ω.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.17 SVRR as a function of frequency.
Fig.18 Po as a function of VCC.
MGD889
MGD888
1.2
1.6
handbook, halfpage
handbook, halfpage
P
(1)
(2)
P
(W)
(W)
1.2
0.8
0.4
0.8
0.4
(3)
(1)
(2)
(3)
0
0
0
0
0.4
0.8
1.2
1.6
4
8
12
16
P
(W)
V
(V)
o
CC
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) CC = 12 V, RL = 16 Ω.
(3) VCC = 9 V, RL = 8 Ω.
V
(3)
RL = 16 Ω.
Fig.19 Worst case power dissipation as a function
of VCC
Fig.20 P as a function of Po.
.
1997 Jun 12
12
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
a. Top view.
10 kΩ
10 kΩ
MS
16
1
TDA8543
IN
1 μF
11 kΩ
47 μF
+
OUT
8
9
56 kΩ
−
OUT
100 nF
100 μF
+
V
P
MGK411
b. Component side.
Fig.21 Printed-circuit board layout (BTL and SE).
13
1997 Jun 12
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
PACKAGE OUTLINES
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
A
A
2
(1)
(1)
Z
1
w
UNIT
mm
b
b
c
D
E
e
e
L
M
M
1
1
E
H
max.
max.
min.
max.
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.1
7.62
0.3
0.254
0.01
2.2
0.021
0.015
0.013
0.009
0.86
0.84
0.32
0.31
0.055
0.045
0.26
0.24
0.15
0.13
0.37
0.33
inches
0.19
0.02
0.15
0.087
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-13
SOT38-1
050G09
MO-001
SC-503-16
1997 Jun 12
14
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-19
SOT109-1
076E07
MS-012
1997 Jun 12
15
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
SOLDERING
Introduction
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1997 Jun 12
16
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability ⎯ Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
1997 Jun 12
17
NXP Semiconductors
Product specification
2 W BTL audio amplifier
TDA8543
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale ⎯ NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Semiconductors’ product specifications.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
1997 Jun 12
18
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/50/01/pp19
Date of release: 1997 Jun 12
Document order number: 9397 750 02232
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