TDA8571J [NXP]
4 x 40 W BTL quad car radio power amplifier; 4× 40瓦四核BTL汽车收音机功率放大器型号: | TDA8571J |
厂家: | NXP |
描述: | 4 x 40 W BTL quad car radio power amplifier |
文件: | 总20页 (文件大小:259K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8571J
4 x 40 W BTL quad car radio power
amplifier
1998 Mar 13
Preliminary specification
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
FEATURES
GENERAL DESCRIPTION
• Requires very few external components
• High output power
The TDA8571J is a integrated class-B output amplifier
contained in a 23-lead Single-In-Line (SIL) plastic power
package. It contains four amplifiers in a BTL configuration,
each with a gain of 34 dB. The output power is 4 × 40 W
(EIAJ) into a 4 Ω load.
• Low output offset voltage
• Fixed gain
• Diagnostic facility (distortion, short-circuit and
temperature pre-warning)
APPLICATIONS
• Good ripple rejection
• The device is primarily developed for car radio
applications.
• Mode select switch (operating, mute and standby)
• Load dump protection
• Short-circuit safe to ground and to VP and across the
load
• Low power dissipation in any short-circuit condition
• Thermally protected
• Reverse polarity safe
• Electrostatic discharge protection
• No switch-on/switch-off plop
• Flexible leads
• Low thermal resistance
• Pin compatible with the TDA8568Q, except for the gain.
QUICK REFERENCE DATA
SYMBOL
VP
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
operating supply voltage
repetitive peak output current
total quiescent current
standby current
6
14.4
−
18
7.5
−
V
IORM
Iq(tot)
Istb
−
A
−
200
0.2
−
mA
µA
µA
kΩ
W
−
100
80
−
Isw
switch-on current
−
Zi
input impedance
25
−
30
40
50
50
34
−
Po(max)
SVRR
αcs
maximum output power
supply voltage ripple rejection
channel separation
THD = maximum
−
Rs = 0 Ω
−
−
dB
dB
dB
µV
mV
mV
Rs = 10 kΩ
−
−
Gv(cl)
Vn(o)
VOS
∆VOS
closed-loop voltage gain
noise output voltage
33
−
35
170
80
80
Rs = 0 Ω
MUTE
DC output offset voltage
delta DC output offset voltage
−
−
ON ↔ MUTE
−
−
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8571J
DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
1998 Mar 13
2
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
BLOCK DIAGRAM
V
V
V
V
MODE
15
P1
1
P2
8
P3
16
P4
23
10
IN1
+
−
2
4
OUT1+
OUT1−
30 kΩ
+
−
V
ref
11
IN2
+
−
7
OUT2+
OUT2−
30 kΩ
+
−
5
9
12
13
SGND
IN3
V
TDA8571J
30 kΩ
DIAGNOSTIC
DIAG
+
−
17
OUT3+
+
−
19
OUT3−
V
ref
14
IN4
+
−
22
20
OUT4+
OUT4−
30 kΩ
+
−
3
6
18
21
MGM562
PGND1 PGND2 PGND3 PGND4
Fig.1 Block diagram.
3
1998 Mar 13
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
PINNING
SYMBOL
VP1
PIN
DESCRIPTION
supply voltage 1
1
2
handbook, halfpage
V
1
2
3
4
5
6
7
8
9
P1
OUT1+
PGND1
OUT1−
OUT2−
PGND2
OUT2+
VP2
output 1+
OUT1+
PGND1
OUT1−
OUT2−
PGND2
OUT2+
3
power ground 1
output 1−
4
5
output 2−
6
power ground 2
output 2+
7
8
supply voltage 2
diagnostic output
input 1
VDIAG
IN1
9
V
P2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V
IN2
input 2
DIAG
SGND
IN3
signal ground
input 3
IN1 10
IN2 11
IN4
input 4
TDA8571J
SGND 12
IN3 13
MODE
VP3
mode select switch input
supply voltage 3
output 3+
IN4 14
OUT3+
PGND3
OUT3−
OUT4−
PGND4
OUT4+
VP4
MODE 15
power ground 3
output 3−
V
16
P3
output 4−
OUT3+ 17
PGND3 18
OUT3− 19
OUT4− 20
PGND4 21
OUT4+ 22
power ground 4
output 4+
supply voltage 4
V
23
P4
MGM563
Fig.2 Pin configuration.
1998 Mar 13
4
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
FUNCTIONAL DESCRIPTION
SHORT-CIRCUIT DIAGNOSTIC
The TDA8571J contains four identical amplifiers which can
be used for bridge applications. The gain of each amplifier
is fixed at 34 dB.
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
10 ms after removal of the short-circuit. During this
short-circuit condition, pin 9 is continuously LOW.
Mode select switch (pin 15)
• Standby: low supply current (<100 µA)
• Mute: input signal suppressed
When a short-circuit occurs across the load of one or more
channels, the output stages are switched off during
approximately 10 ms. After that time it is checked during
approximately 50 µs to determine whether the short-circuit
is still present.
• Operating: normal on condition.
Since this pin has a low input current (<80 µA), a low cost
supply switch can be applied.
Due to this duty cycle of 50 µs/10 ms the average current
consumption during this short-circuit condition is very low.
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥150 ms (charging of the input
capacitors at pins 10, 11, 13 and 14). When switching
from standby to mute, the slope should be at least 18 V/s.
During this short-circuit condition, pin 9 is LOW for 10 ms
and HIGH for 50 µs (see Fig.5). The protection circuits of
all channels are coupled. This means that if a short-circuit
condition occurs in one of the channels, all channels are
switched off. Consequently, the power dissipation in any
short-circuit condition is very low.
This can be realized by:
• Microprocessor control
• External timing circuit (see Fig.3).
TEMPERATURE PRE-WARNING
Diagnostic output (pin 9)
When the virtual junction temperature Tvj reaches 145 °C,
pin 9 goes LOW.
DYNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 9
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and so limit the distortion. The output level of pin 9
is independent of the number of channels that are clipping
(see Fig.4).
OPEN COLLECTOR OUTPUTS
The diagnostic pin has an open collector output, so more
devices can be tied together. An external pull-up resistor is
needed.
MGG155
handbook, halfpage
V
o
+V
P
handbook, halfpage
0
10 kΩ
MODE
47 µF
V
9
BZX79C/3.9V
V
P
MGD959
0
t
Fig.3 Mode select switch circuitry.
Fig.4 Distortion detector waveform.
1998 Mar 13
5
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
short
circuit
MGG156
current
t
short-circuit over the load
V
9
10 ms
V
P
t
50 µs
Fig.5 Short-circuit waveform.
1998 Mar 13
6
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
MAX.
UNIT
−
−
−
18
30
45
V
V
V
non-operating
load dump protection;
during 50 ms; tr ≥ 2.5 ms
Vsc(safe)
Vrp
short-circuit safe voltage
reverse polarity voltage
−
−
−
−
−
18
6
V
V
IOSM
IORM
Ptot
non-repetitive peak output current
repetitive peak output current
total power dissipation
10
A
7.5
A
60
W
°C
°C
°C
Tstg
storage temperature
−55
−40
−
+150
+85
150
Tamb
Tvj
operating ambient temperature
virtual junction temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
K/W
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case (see Fig.6)
40
1
virtual junction
OUT2 OUT3
handbook, halfpage
OUT1
OUT4
3.2 K/W
3.2 K/W
3.2 K/W
3.2 K/W
0.2 K/W
case
MGG157
Fig.6 Equivalent thermal resistance network.
1998 Mar 13
7
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
QUALITY SPECIFICATION
In accordance with “SNW-FQ-0611E”. The number of the quality specification can be found in the “Quality Reference
Handbook”. The handbook can be ordered using the code 9397 750 00192.
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VP
supply voltage
quiescent current
note 1
6
14.4
200
18
V
Iq(tot)
RL = ∞
−
360
mA
Operating condition
V15
I15
mode select switch level
8.5
−
−
Vp
80
−
V
mode select switch current
output voltage
V15 = 14.4 V
note 2
30
7.0
µA
V
VO
−
Mute condition
V15
mode select switch level
output voltage
3.3
−
−
6.4
−
V
VO
note 2
7.0
−
V
VOS
∆VOS
DC output offset voltage
delta DC output offset voltage
MUTE
−
80
80
mV
mV
ON ↔ MUTE
−
−
Standby condition
V15
Istb
mode select switch level
0
−
2
V
standby current
−
0.2
100
µA
Diagnostic
V9
Tvj
diagnostic output voltage
temperature pre-warning
during any fault condition
V9 = 0.6 V
−
−
−
0.6
V
145
−
°C
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤ 1⁄2VP.
1998 Mar 13
8
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
THD = 0.5%
MIN.
16
TYP.
19
MAX.
UNIT
−
W
THD = 10%
21
−
26
−
−
−
−
W
W
W
W
VP = 13.7 V; THD = 0.5%
VP = 13.7 V; THD = 10%
17.5
23
−
Po(max)
THD
maximum output power
total harmonic distortion
THD = maximum;Vi = 2 V (p-p) 34
square wave
40
Po = 1 W
−
−
−
0.1
10
−
−
−
%
V9 = 0.6 V; note 1
%
Bp
power bandwidth
THD = 0.5%; Po = −1 dB
20 to
Hz
with respect to 16 W
20000
fro(l)
low frequency roll-off
high frequency roll-off
closed-loop voltage gain
at −1 dB; note 2
at −1 dB
−
25
−
−
Hz
fro(h)
20
33
40
−
kHz
dB
Gv(cl)
SVRR
34
−
35
−
supply voltage ripple rejection on; Rs = 0 Ω;
Vripple = Vripple(max) = 2 V (p-p)
dB
mute; Rs = 0 Ω;
Vripple = Vripple(max) = 2 V (p-p)
50
80
−
−
−
−
dB
dB
standby; Rs = 0 Ω;
Vripple = Vripple(max) = 2 V (p-p)
Zi
input impedance
25
30
38
kΩ
µV
Vn(o)
noise output voltage
on; Rs = 0 Ω;
−
125
170
B = 20 Hz to 20 kHz
on; Rs = 10 kΩ;
B = 20 Hz to 20 kHz
−
−
150
100
−
−
µV
µV
mute; B = 20 Hz to 20 kHz;
independent of Rs
αcs
∆Gv
Vo
channel separation
channel unbalance
output signal in mute
Po = 16 W; Rs = 10 kΩ
45
−
−
−
−
−
1
2
dB
dB
mV
Vi = Vi(max) = 1 V (RMS)
−
Notes
1. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0.
2. Frequency response externally fixed.
1998 Mar 13
9
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
TEST AND APPLICATION INFORMATION
V
MODE
P
+14.4 V
2200 µF
100 nF
V
1
V
8
V
V
P1
P2
P3
16
P4
23
15
10
IN1
input 1
input 2
input 3
input 4
+
−
2
4
OUT1+
OUT1−
470 nF
30 kΩ
R
L
= 4 Ω
+
−
V
ref
11
IN2
+
−
7
OUT2+
OUT2−
470 nF
30 kΩ
R
= 4 Ω
+V
L
+
−
5
9
10 kΩ
P
12
13
SGND
IN3
V
DIAG
diagnostic
output
TDA8571J
DIAGNOSTIC
+
−
17
OUT3+
OUT3−
470 nF
30 kΩ
R
L
= 4 Ω
+
−
19
V
ref
14
IN4
+
−
22
20
OUT4+
OUT4−
470 nF
30 kΩ
R
L
= 4 Ω
+
−
3
6
18
21
PGND1 PGND2 PGND3 PGND4
MGM564
power ground (substrate)
Special care must be taken in the PCB-layout to separate pin 9 from the pins 10, 11 13 and 14 to minimize the crosstalk between the clip output and
the inputs.
To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥ 150 ms (charging the input capacitors at pins
10, 11, 13 and 14).
Fig.7 Application circuit diagram.
1998 Mar 13
10
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
Test information
Figures 8 to 13 have the following conditions: VP = 14.4 V; RL = 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise
specified.
MGM566
MGM567
300
80
handbook, halfpage
handbook, halfpage
P
o
(W)
I
P
(mA)
60
200
40
20
(1)
100
(2)
(3)
0
0
0
8
4
8
12
16
20
10
12
14
16
18
V
(V)
V
(V)
P
P
(1) EIAJ; 100 Hz.
(2) THD + N = 10%.
(3) THD + N = 0.5%.
Fig.8 IP as a function of VP.
Fig.9 Po as a function of VP.
MGM568
MGM569
10
10
handbook, halfpage
handbook, halfpage
THD + N
(%)
THD + N
(%)
1
1
(1)
(2)
(1)
−1
10
−1
10
(2)
(3)
−2
10
−2
10
−2
−1
2
10
10
1
10
10
2
3
4
5
10
10
10
10
10
P
(W)
f (Hz)
o
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(1) Po = 1 W.
(2) Po = 10 W.
Fig.10 THD + N as a function of Po.
Fig.11 THD + N as a function of frequency.
1998 Mar 13
11
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
MGM570
MGM565
−20
−30
handbook, halfpage
handbook, halfpage
α
cs
SVRR
(dB)
(dB)
(1)
−40
−50
(2)
−60
−80
−70
−90
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Between channels 1 and 2 or between channels 3 and 4.
(2) Between channels 1 or 2 and channels 3 or 4.
Fig.13 Channel separation as a function of
frequency.
Fig.12 SVRR as a function of frequency.
1998 Mar 13
12
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
PCB layout
111.76
78.74
Pgnd
100 nF
2200 µF
V
P
−
−
out1
−
out 4
+
+
470 nF
470 nF
−
−
out 3
+
out2
+
diag
in
sgnd
in
mode
10 kΩ
1
2
3
4
MGK079
Dimensions in mm.
Fig.14 PCB layout (component side).
13
1998 Mar 13
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
111.76
78.74
Pgnd
100nF
2200 µF
V
P
−
−
−
out1
out 4
+
+
470 nF
470 nF
−
out 3
+
−
out2
+
mode
in
sgnd
in
diag
10 kΩ
4
3
2
1
MGK080
Dimensions in mm.
Fig.15 PCB layout (soldering side).
14
1998 Mar 13
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
PACKAGE OUTLINE
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
β
A
A
5
4
E
2
B
j
E
E
1
L
2
L
L
3
1
1
23
L
c
2
Q
v M
e
w
M
1
Z
b
p
e
m
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT A
A
A
b
c
D
d
D
E
e
e
e
E
E
E
j
L
L
L
L
3
m
Q
v
w
x
β
Z
2
4
5
p
h
1
2
h
1
2
1
2
4.6 1.15 1.65 0.75 0.55 30.4 28.0
4.3 0.85 1.35 0.60 0.35 29.9 27.5
12.2
11.8
10.15 6.2 1.85 3.6 14.0 10.7 2.4
9.85 5.8 1.65 2.8 13.0 9.9 1.6
1.43
0.78
2.1
1.8
6
mm
12
2.54 1.27 5.08
4.3
0.6 0.25 0.03 45°
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
96-10-11
98-02-20
SOT411-1
1998 Mar 13
15
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 13
16
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
NOTES
1998 Mar 13
17
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
NOTES
1998 Mar 13
18
Philips Semiconductors
Preliminary specification
4 x 40 W BTL quad car radio power
amplifier
TDA8571J
NOTES
1998 Mar 13
19
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Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/01/pp20
Date of release: 1998 Mar 13
Document order number: 9397 750 03261
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