TDA8580 [NXP]
Multi-purpose power amplifier; 多功能电源放大器器
| 型号： | TDA8580 |
| 厂家： | 
NXP |
| 描述： | Multi-purpose power amplifier |
| 文件： | 总20页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8580
Multi-purpose power amplifier
1998 Feb 25
Preliminary specification
Supersedes data of 1996 Jan 4
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
FEATURES
General
GENERAL DESCRIPTION
The TDA8580 is a stereo bridge-tied load (BTL) or a quad
single-ended amplifier that operates over a wide supply
voltage range from 8 to 28 V. This makes it suitable for
many applications, such as car radios, television and
home-sound systems.
• Operating voltage from 8 to 28 V
• Low distortion
• Few external components, fixed gain
• High output power
Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2 × SE application
can also be configured.
• Can be used as a stereo amplifier in bridge-tied load
(BTL) or quad single-ended (SE) amplifiers
• Single-ended mode without loudspeaker capacitor
• Mute and standby mode with one- or two-pin operation
• Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145 °C) and short-circuit
• No switch on/off plops when switching between
‘standby’ to ‘mute’ and from ‘mute’ to ‘on’
• Low offset variation at outputs between ‘mute’ and ‘on’
• Fast mute on supply voltage drops.
Protection
• Reverse polarity safe
• Short-circuit proof to ground, positive supply voltage on
all pins and across load
• ESD protected on all pins
• Thermal protection against temperatures exceeding
150 °C
• Load dump protection
• Protected against open-circuit ground pins and output
short-circuited to supply ground.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8580
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
1998 Feb 25
2
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
QUICK REFERENCE DATA
SYMBOL
VP
Iq(tot)
Istb
PARAMETER
CONDITIONS
MIN.
8.0
TYP.
MAX.
28
UNIT
operating supply voltage
total quiescent current
standby supply current
voltage gain
−
V
VP = 14.4 V
−
120
1
140
50
mA
µA
dB
dB
VP = 14.4 V
−
Gv
single-ended
bridge-tied load
25
31
26
32
27
33
Bridge-tied load application
Po
output power
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
−
−
−
−
−
16
−
W
W
%
THD = 0.5%; VP = 24 V;
RL = 8 Ω
28
−
THD
total harmonic distortion
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4 Ω
0.05
0.05
10
−
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8 Ω
−
%
Voffset(DC)
DC output offset voltage
noise output voltage
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
20
mV
VP = 14.4 V; ‘on’ condition
−
0
100
150
−
mV
µV
dB
Vno
Rs = 1 kΩ; VP = 14.4 V
−
100
−
SVRR
supply voltage ripple rejection fi = 1 kHz; Vripple(p-p) = 2 V;
55
‘on’ or ‘mute’ condition;
Rs = 0 Ω
Single-ended application
Po
output power
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
−
−
−
4.2
13
10
−
W
THD = 0.5%; VP = 24 V;
RL = 4 Ω
−
W
Voffset(DC)
DC output offset voltage
noise output voltage
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
20
mV
VP = 14.4 V; ‘on’ condition
−
0
100
120
−
mV
µV
dB
Vno
Rs = 1 kΩ; VP = 14.4 V
−
80
−
SVRR
supply voltage ripple rejection fi = 1 kHz; Vripple(p-p) = 2 V;
45
‘on’ or ‘mute’ condition;
Rs = 0 Ω
1998 Feb 25
3
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
BLOCK DIAGRAM
V
V
P1
3
P2
15
7
IN1
45 kΩ
−
V/I
60
kΩ
−
1
4
OUT1+
OUT2−
+
OA
+
TDA8580
8
IN2
+
−
+
−
OA
60
kΩ
V/I
45 kΩ
V
V
px
45
px
kΩ
30 kΩ
9
BUFFER
45
kΩ
BUFFER
BUFFER
45 kΩ
−
V/I
60
kΩ
−
14
17
OUT3−
OUT4+
+
OA
+
10
12
IN3
IN5
+
+
−
OA
−
60
kΩ
V/I
11
45 kΩ
IN4
13
5
MUTE
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
2
16
MGE010
PGND1
PGND2
Fig.1 Block diagram.
4
1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PINNING
SYMBOL
PIN
DESCRIPTION
handbook, halfpage
OUT1+
PGND1
VP1
1
2
3
4
5
6
7
8
9
non-inverting output 1
power ground 1
supply voltage 1
inverting output 2
‘standby’/‘mute’/‘on’ selection
diagnostic output
input 1
1
2
OUT1+
PGND1
3
V
P1
OUT2−
STANDBY
DIAG
4
OUT2−
5
STANDBY
DIAG
IN1
IN1
6
IN2
input 2
7
BUFFER
buffer output
(single-ended output buffer)
8
IN2
9
BUFFER
IN3
TDA8580
IN3
10
11
12
13
14
15
16
17
input 3
10
11
12
13
14
15
16
17
IN4
input 4
IN4
IN5
input 5; signal ground capacitor
‘mute’/‘on’ selection
inverting output 3
supply voltage 2
power ground 2
non-inverting output 4
MUTE
OUT3−
VP2
IN5
MUTE
OUT3−
PGND2
OUT4+
V
P2
PGND2
OUT4+
MGE009
Fig.2 Pin configuration.
1998 Feb 25
5
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Protections are included to avoid the IC being damaged at:
FUNCTIONAL DESCRIPTION
• Over temperature: T > 150 °C.
The TDA8580 is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current);
• Short-circuit of the output pin(s) to ground or supply rail.
When short-circuited, the power dissipation is limited.
• A missing-current limiter which limits the maximum short
circuit output current to PGND or VP pins to 1 A.
The dissipation and speaker current will be minimized
because the short-circuited amplifier is switched off. The
chip temperature is limited by the temperature
protection.
• Dual bridge-tied load (BTL) amplifiers
• Quad single-ended amplifiers
• Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched on (play or ‘mute’) and off
(‘standby’) by the MUTE and STANDBY pins (for
interfacing directly with a microcontroller). One-pin
operation is also possible by applying a voltage greater
than 8 V to the ‘standby’/’mute’/’on’ selection pin (pin 5) to
switch the amplifier in ‘on’ mode.
• ESD protection (Human Body Model 3000 V, Machine
Model 300 V).
• Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground. No high DC current will flow
from the supply pins of the amplifier.
Special attention is given to the dynamic behaviour as
follows:
Diagnostics are available for the following conditions
(see Figs 4 to 7).
• Noise suppression during engine start.
• Amplifier in ‘mute’
• No plops when switching from ‘standby’ to ‘on’.
• Chip temperature greater than 145 °C
• Distortion over 2% due to clipping
• Short-circuit protection active.
• Slow offset change between ‘mute’ and ‘on’ (controlled
by MUTE and STANDBY pins).
• Low noise levels, which are independent of the supply
voltage.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS
VP supply voltage operating
MIN.
MAX.
28
UNIT
8
V
V
load dump protected;
see Fig.3
−
45
VDIAG
IOSM
IORM
Vrev
voltage on diagnostic pin
−
−
−
−
−
18
6
V
A
A
V
V
non-repetitive peak output current
repetitive peak output current
reverse polarity voltage
4.5
6
Vsc
AC and DC short-circuit voltage of output no external series
pins across loads and to ground or supply resistor in supply line;
24
pins
note 1
Ptot
Tj
total power dissipation
junction temperature
storage temperature
operating ambient temperature
−
−
75
W
150
+150
+150
°C
°C
°C
Tstg
Tamb
−55
−40
Note
1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of
tbf Ω.
1998 Feb 25
6
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
in free air
40
K/W
K/W
1.5
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = ∞; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
operating supply voltage
total quiescent current
standby current
8.0
14.4
28
V
Iq(tot)
Istb
−
120
1
140
50
−
mA
µA
V
−
VO
DC output voltage
VP = 14.4 V
−
7.0
7.0
−
VP(mute)
Vo
low supply voltage mute
6.0
−
8.0
20
V
single-ended and bridge-tied
load output voltage
VP = 14.4 V; ‘mute’ condition;
RL = 4 Ω
mV
VI
DC input voltage
VP = 14.4 V
−
4.0
−
V
STANDBY PIN (see Table 1)
V5(stb)
voltage at STANDBY pin for
‘standby’ condition
0
−
0.8
V
V
Vhys(5)(stb)
hysteresis voltage at
STANDBY pin for ‘standby’
condition
note 1
−
0.2
−
V5(mute)
V5(on)
voltage at STANDBY pin for
‘mute’ condition
V13 < 1 V
2.0
8.0
−
−
5.5
18
V
V
voltage at STANDBY pin for
‘on’ condition
V13 < 1 V; VP > 9 V; note 2
MUTE PIN (see Table 1)
V13(mute) voltage at MUTE pin for
V5 = 5 V
V5 = 5 V
0
−
−
1.0
5.5
V
V
‘mute’ condition
V13(on)
voltage at MUTE pin for
‘on’ condition
3.5
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
VOL
ILI
low level output voltage
leakage current
clip detector
Isink = 1 mA
−
0.2
−
0.8
1
V
VDIAG = 14.4 V
−
µA
%
CD
V
DIAG < 0.8 V
tbf
−
2
tbf
−
Tj(diag)
junction temperature for high
temperature warning
VDIAG < 0.8 V
145
°C
1998 Feb 25
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
SYMBOL
Stereo BTL application (see Fig.8)
THD total harmonic distortion
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
fi = 1 kHz; Po = 1 W; RL = 4 Ω
−
−
0.05
0.1
%
fi = 10 kHz; Po = 1 W;
RL = 4 Ω;
0.2
−
%
Filter: 22 Hz < f < 30 kHz
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4 Ω
−
−
0.05
0.05
16
−
−
−
−
−
−
%
%
W
W
W
W
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8 Ω
Po
output power
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
15
25
18
−
THD = 0.5%; VP = 24 V;
RL = 8 Ω
28
THD = 10%; VP = 14.4 V;
RL = 4 Ω
20
THD = 10%; VP = 24 V;
35
RL = 8 Ω
Gv
voltage gain
Vo(rms) = 3 V
31
32
55
−
33
−
dB
dB
dB
mV
mV
αcs
channel separation
channel unbalance
DC output offset voltage
Po = 2 W; fi = 1 kHz; RL = 4 Ω 40
∆Gv
−
1
Voffset(DC)
VP = 14.4 V; ‘on’ condition
−
−
0
100
20
VP = 14.4 V; ‘mute’ condition;
10
RL = 4 Ω
Vno
noise output voltage
noise output voltage mute
output voltage mute
Rs = 1 kΩ; VP = 14.4 V; note 3
note 3
−
100
0
150
20
µV
µV
µV
dB
Vno(mute)
Vo(mute)
SVRR
−
Vi(rms) = 1 V
−
3
500
−
supply voltage ripple rejection Rs = 0 Ω; fi = 1 kHz;
Vripple(p-p) = 2 V; ‘on’ or ‘mute’
condition
55
−
Zi
input impedance
23
30
60
37
kΩ
CMRR
common mode rejection ratio Rs = 0 Ω; Vi(rms) = 0.5 V;
−
−
dB
fi = 1 kHz
Quad SE application (see Fig.9)
THD
total harmonic distortion
fi = 1 kHz; Po = 1 W; RL = 4 Ω
−
−
0.05
0.2
0.1
%
%
fi = 10 kHz; Po = 1 W;
RL = 4 Ω;
−
Filter: 22 Hz < f < 30 kHz
1998 Feb 25
8
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
SYMBOL
Po
PARAMETER
output power
CONDITIONS
MIN.
TYP.
4.2
MAX.
UNIT
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
4
−
−
−
−
W
THD = 0.5%; VP = 24 V;
RL = 4 Ω
11.5
−
13
5.5
16
W
W
W
THD = 10%; VP = 14.4 V;
RL = 4 Ω
THD = 10%; VP = 24 V;
RL = 4 Ω
14
25
Gv
voltage gain
Vo(rms) = 3 V
26
46
−
27
−
dB
dB
dB
mV
mV
αcs
channel separation
channel unbalance
DC output offset voltage
Po = 2 W; fi = 1 kHz; RL = 4 Ω 40
∆Gv
−
1
Voffset(DC)
VP = 14.4 V; ‘on’ condition
−
−
0
100
20
VP = 14.4 V; ‘mute’ condition;
10
RL = 4 Ω
Vno
noise output voltage
noise output voltage mute
output voltage mute
Rs = 1 kΩ; VP = 14.4 V; note 3
note 3
−
−
−
80
0
120
20
µV
µV
µV
dB
Vno(mute)
Vo(mute)
SVRR
Vi(rms) = 1 V
3
500
−
supply voltage ripple rejection fi = 1 kHz; Vripple(p-p) = 2 V, ‘on’ 45
−
or ‘mute’ condition; Rs = 0 Ω
Zi
input impedance
46
60
60
74
kΩ
CMRR
common mode rejection ratio Vi(rms) = 0.5 V; fi = 1 kHz;
−
−
dB
Rs = 0 Ω
Notes to the characteristics
1. Hysteresis between rise and fall voltage when MSB pin is controlled with real voltage source (the hysteresis depends
on resistor connected to MSB pin).
2. At lower VP the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an
‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1 Selection of ‘standby’, ‘mute’ and ‘on’.
VOLTAGE AT PIN 5
VOLTAGE AT PIN 13
FUNCTION
V5 < 0.8 V
2 V < V5 < 5.3 V
2 V < V5 < 5.3 V
V5 ≥ 8.0 V
don’t care
V13 < 1 V
‘standby’ (off)
‘mute’ (DC settled)
‘on’ (AC operating)
‘on’ (AC operating)
3.5 V < V13 < 5.3 V
don’t care
1998 Feb 25
9
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
play
normal
handbook, halfpage
DIAG
MGL404
handbook, halfpage
45 V
amplifier
in mute
on
mute
STANDBY
V
P
amplifier
output
14.4 V
t (ms)
MGE019
t
t
f
r
Fig.3 Load dump voltage waveform.
Fig.4 Diagnostic waveform: normal play.
short-circuit
overload
handbook, halfpage
handbook, halfpage
play
DIAG
normal
DDD
normal
DIAG
amplifier
output
amplifier
output
MGE020
MGE021
Fig.5 Diagnostic waveform: short-circuit overload.
Fig.6 Diagnostic waveform: DDD play.
1998 Feb 25
10
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
short-circuit to
handbook, halfpage
V
PGND
P
DIAG
amplifier
output
MGE022
Fig.7 Diagnostic waveform: short-circuit to GND and VP.
1998 Feb 25
11
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
APPLICATION INFORMATION
V
P
1000 µF
16/40 V
100 nF
V
3
V
P1
P2
15
220 nF
7
8
IN1
IN2
45 kΩ
−
V/I
60
kΩ
−
1
4
OUT1+
OUT2−
V
inL
+
OA
+
TDA8580
+
−
4 or 8 Ω
+
−
+
−
OA
60
kΩ
V/I
45 kΩ
V
V
px
45
px
kΩ
30 kΩ
9
BUFFER
45
kΩ
BUFFER
BUFFER
100 µF
10 V
45 kΩ
IN5 12
−
60
kΩ
−
OA
V/I
14
17
OUT3−
OUT4+
+
10
IN3
+
+
−
4 or 8 Ω
+
OA
−
+
−
60
V/I
kΩ
220 nF
IN4 11
45 kΩ
+5 V
10
kΩ
MUTE
13
5
V
inR
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
2
16
PGND2
MGE011
PGND1
Fig.8 Stereo bridge-tied load application.
12
1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
V
P
1000 µF
16/40 V
100 nF
V
3
V
P1
P2
15
220 nF
IN1
IN2
7
8
45 kΩ
−
V/I
V
60
kΩ
inR
−
OUT1+
1
4
+
OA
+
TDA8580
+
4 or 8 Ω
FRONT
220 nF
−
+
−
OUT2−
+
−
OA
60
kΩ
V
inL
V/I
45 kΩ
−
+
V
V
4 or 8 Ω
px
45
px
kΩ
30 kΩ
9
BUFFER
45
kΩ
BUFFER
BUFFER
+
−
100 µF
10 V
4 or 8 Ω
45 kΩ
IN5 12
−
60
kΩ
−
OA
V/I
14
17
OUT3−
220 nF
+
10
IN3
+
−
V
inR
4 or 8 Ω
+
+
OA
−
OUT4+
+
−
60
kΩ
V/I
REAR
220 nF
IN4 11
45 kΩ
+5 V
V
inL
10
kΩ
MUTE
13
5
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
2
16
PGND2
MGE013
PGND1
Fig.9 Quad single-ended application.
13
1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
V
P
1000 µF
16/40 V
100 nF
V
3
V
P1
P2
15
220 nF
IN1
IN2
7
8
45 kΩ
−
V/I
60
kΩ
V
inR
−
1
OUT1+
+
OA
+
TDA8580
+
4 or 8 Ω
−
+
−
4
OUT2−
+
−
OA
60
kΩ
V/I
45 kΩ
V
V
px
px
45
kΩ
30 kΩ
BUFFER
9
45
kΩ
BUFFER
BUFFER
+
−
100 µF
10 V
4 or 8 Ω
45 kΩ
IN5 12
−
60
kΩ
−
OA
V/I
OUT3−
14
17
220 nF
+
10
IN3
+
−
V
4 or 8 Ω
inR
+
+
OA
−
OUT4+
+
−
60
kΩ
V/I
220 nF
IN4 11
45 kΩ
+5 V
V
inL
10
kΩ
MUTE 13
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
5
2
16
PGND2
MGE012
PGND1
Fig.10 Dual single-ended and one bridge-tied load application.
14
1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
INTERNAL PIN CONFIGURATION
PIN
NAME
EQUIVALENT CIRCUIT
7, 8, 10,
11 and 12
inputs
V
P
handbook, halfpage
IN
MGE014
1, 4,
14 and 17
outputs
handbook, halfpage
V
P
OUT
0.5 V
MGE015
P
5 and 13
mode select
V
handbook, halfpage
P
MGE016
1998 Feb 25
15
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.8
4.3
0.4 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-03-11
97-12-16
SOT243-1
1998 Feb 25
16
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 25
17
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
1998 Feb 25
18
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
1998 Feb 25
19
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© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/02/pp20
Date of release: 1998 Feb 25
Document order number: 9397 750 02237
相关型号：
TDA8588BJ/N3,112
IC SPECIALTY CONSUMER CIRCUIT, PZFM37, PLASTIC, SOT725-1, 37 PIN, Consumer IC:Other
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TDA8588J/N3,112
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