TDA8591 [NXP]
4 X 44 W into 4 or 4 X 75 W into 2 quad BTL car radio power amplifier; 4× 44 W功率4或4× 75瓦到2个四BTL汽车收音机功率放大器
| 型号： | TDA8591 |
| 厂家： | 
NXP |
| 描述： | 4 X 44 W into 4 or 4 X 75 W into 2 quad BTL car radio power amplifier |
| 文件： | 总36页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8591J
4 × 44 W into 4 Ω or 4 × 75 W
into 2 Ω quad BTL car radio power
amplifier
Preliminary specification
2002 Jan 14
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
CONTENTS
15
PACKAGE OUTLINE
16
SOLDERING
1
2
3
4
5
6
7
FEATURES
16.1
Introduction to soldering through-hole mount
packages
Soldering by dipping or by solder wave
Manual soldering
Suitability of through-hole mount IC packages
for dipping and wave soldering methods
GENERAL DESCRIPTION
ORDERING INFORMATION
QUICK REFERENCE DATA
BLOCK DIAGRAM
16.2
16.3
16.4
PINNING
17
18
19
DATA SHEET STATUS
DEFINITIONS
FUNCTIONAL DESCRIPTION
7.1
7.2
7.3
7.4
Diagnostic facility
DISCLAIMERS
Diagnostic output (DIAG)
Mute timer and single-pin mute control
Output power
8
LIMITING VALUES
9
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
DC CHARACTERISTICS
AC CHARACTERISTICS
Performance curves
10
11
12
12.1
13
13.1
14
TEST INFORMATION
Protection circuit testing
APPLICATION INFORMATION
14.1
14.2
14.3
14.4
14.5
14.6
14.7
14.8
Special attention for SMD input capacitors
Capacitors on outputs
EMC precautions
Offset detection
Channel selection
Detection of short-circuits
PCB layout
PCB design advice
2002 Jan 14
2
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
1
FEATURES
• All outputs can withstand short-circuits to ground, to the
positive supply voltage and across the load
• Low quiescent current
• Pin CP can withstand short-circuits to its adjacent pins,
all other pins can withstand short-circuits to ground and
to the positive supply voltage
• Low distortion
• Low output offset voltage
• Soft thermal clipping to prevent audio holes
• ESD protection on all pins
• External mute timer for low start-up plop (also allows a
fast mute function)
• Thermal protection against junction temperatures
exceeding 150 °C
• High output power
• Load dump protection
• Operating, mute and standby mode selection by two-pin
or single-pin operation
• Protected against open ground pins (loss of ground) and
outputs short-circuited to supply ground
• Diagnostic information available:
– Dynamic Distortion Detection (DDD)
– High temperature detection
– Short-circuit detection
• All negative outputs are protected against open supply
voltage and output short-circuited to supply voltage
• Reverse-polarity safe.
2
GENERAL DESCRIPTION
– Detection of output offset due to leakage current at
the input
The TDA8591J is a quad BTL audio power amplifier
comprising four independent amplifiers in Bridge Tied
Load (BTL) configuration. Each amplifier has a gain of
26 dB and supplies an output power of 75 W (EIAJ) into a
2 Ω load. The TDA8591J has low quiescent current and is
primarily developed for car audio applications.
• No switch-on/switch-off plops when switching between
standby and mute modes or between mute and
operating modes
• Fast mute with supply voltage drops
• Package with flexible leads
3
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8591J
DBS27P
plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm)
SOT521-1
2002 Jan 14
3
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
4
QUICK REFERENCE DATA
SYMBOL
VP
PARAMETER
CONDITIONS
MIN.
8.0
TYP.
14.4
MAX.
18.0
UNIT
supply voltage
V
Iq(tot)
Istb
Zi
total quiescent current
standby supply current
input impedance
output power
120
−
200
2
290
50
−
mA
µA
kΩ
−
70
Po
THD + N = 0.5%
RL = 4 Ω
19
22
34
−
−
W
W
RL = 2 Ω
−
THD + N = 10%
RL = 4 Ω
27
28
47
−
−
W
W
RL = 2 Ω
−
EAIJ values
RL = 4 Ω
41.5
−
44
75
−
−
W
RL = 2 Ω
−
W
VOO
output offset voltage
voltage gain
mute mode
−
30
60
27
0.1
mV
mV
dB
%
DC operating mode
Vi = 40 mV (RMS)
Po = 1 W; f = 1 kHz; RL = 4 Ω
−
−
Gv
25
−
26
0.03
THD + N
total harmonic distortion
plus noise
αcs
channel separation
noise output voltage
Vi = 40 mV (RMS); Rs = 0 Ω
Rs = 0 Ω; see Fig.29
56
−
68
70
68
−
−
−
dB
µV
dB
Vn(o)
SVRR
supply voltage ripple
rejection
Vripple = 2 V (p-p); mute or
54
operating mode; Rs = 0 Ω;
see Fig.29
2002 Jan 14
4
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
5
BLOCK DIAGRAM
V
P
V
1
V
V
P1
P2
13
P3
15
10
3
5
IN1
OUT1−
26 dB
OUT1+
9
OUT2+
OUT2−
26 dB
11
12
IN2
V
P
14
CHARGE
PUMP
CP
TDA8591J
22
CIN
2
SGND
IN3
16
19
17
OUT3+
OUT3−
26 dB
25
23
OUT4−
OUT4+
26 dB
18
20
8
IN4
STBY
INTERFACE
MUTE/ON
6
OFFSET
DETECTION
DIAGNOSTIC
27
DIAG
26
OFFCAP
4
7
21
24
MGW449
PGND1 PGND2 PGND3 PGND4 GNDHS
Fig.1 Block diagram.
5
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
6
PINNING
SYMBOL
PIN
DESCRIPTION
handbook, halfpage
VP1
1
2
3
4
5
6
7
8
power supply to channels 1 and 4
signal ground
V
1
2
3
4
5
6
7
8
9
P1
SGND
SGND
OUT1−
OUT1−
PGND1
OUT1+
DIAG
channel 1 negative output
channel 1 power ground
channel 1 positive output
diagnostic output
PGND1
OUT1+
PGND2
MUTE/ON
channel 2 power ground
DIAG
mode select input: mute/amplifier
operating (via mute timer)
PGND2
MUTE/ON
OUT2+
OUT2+
IN1
9
channel 2 positive output
10 channel 1 input
IN1 10
OUT2−
IN2
11 channel 2 negative output
12 channel 2 input
OUT2− 11
VP2
13 channel 2 power supply
14 charge pump capacitor
15 channel 3 power supply
16 channel 3 input
IN2
12
13
CP
V
P2
VP3
CP 14
TDA8591J
IN3
V
15
16
P3
OUT3−
IN4
17 channel 3 negative output
18 channel 4 input
IN3
OUT3− 17
OUT3+
STBY
PGND3
CIN
19 channel 3 positive output
20 standby select input
IN4
OUT3+
STBY
18
19
20
21 channel 3 power ground
22 common input voltage
23 channel 4 positive output
24 channel 4 power ground
25 channel 4 negative output
26 offset detection capacitor
27 ground (heatsink of encapsulation)
OUT4+
PGND4
OUT4−
OFFCAP
GNDHS
PGND3 21
22
CIN
OUT4+ 23
PGND4 24
OUT4− 25
OFFCAP 26
GNDHS 27
MGW450
Fig.2 Pin configuration.
2002 Jan 14
6
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
7
FUNCTIONAL DESCRIPTION
• All outputs protected are against open power supply
pins and outputs short-circuited to power supply voltage
(see Fig.31)
The TDA8591J is an audio power amplifier with four
independent Bridge Tied Load (BTL) amplifiers with high
output power and low distortion. The gain of each amplifier
is fixed at 26 dB. The TDA8591J has two-pin mode control
which allows the amplifiers to be switched to standby (off)
with the STBY pin, and the MUTE/ON pin to be used to
switch between mute mode (input signal suppressed) and
amplifier operating mode.
• With a reversed polarity power supply an external diode
conducts and a fuse blows and therefore the reversed
polarity voltage will not damage the device (see Fig.32).
7.1
Diagnostic facility
A diagnostic facility is available from the status of pin DIAG
for the following conditions:
Special attention is paid to dynamic behaviour:
• In normal operation, the level on the DIAG pin is
continuously HIGH (see Fig.3)
• A fast mute that switches all amplifiers to mute mode at
low supply voltage and suppresses noise during engine
start
• When a temperature pre-warning occurs due to the
junction temperature Tvj reaching 145 °C, the DIAG pin
goes continuously LOW
• No plops when switching between standby and mute
modes
• When there is distortion over 2.5% because of clipping,
the DIAG pin has a pulsed output as shown in Fig.4
• Slow offset change when switching from mute mode to
operating mode (can be adjusted by an external
capacitor)
• When a short-circuit is detected, the short-circuit
protection becomes active and DIAG goes continuously
LOW for the period of the short-circuit (see Figs 5 and 6)
• A fast mute function by discharging the external mute
capacitor quickly
• With an extreme output offset, input leakage current
causes a DC output offset voltage and results in power
dissipation in the loudspeakers. Therefore, if the
DC output offset voltage of a bridge is larger than 2 V,
DIAG is pulled LOW to indicate an error condition.
The following protection circuits are included to prevent
the IC from being damaged:
• Thermal shutdown:
At junction temperature Tvj > 170 °C, all power stages
are switched off to prevent a further increase in
temperature
The DIAG pin has an open-drain output to allow several
devices to be tied together. An external pull-up resistor is
needed.
• Soft thermal clipping:
At junction temperature Tvj > 155 °C, the gain reduces
as temperature increases, resulting in less output power
and decreasing temperature and therefore no thermal
shutdown (no break in the audio)
• Short-circuit protection:
If a short-circuit to ground or supply voltage occurs at
one or more of the output pins, or across the load of one
or more of the channels, the following action occurs to
reduce power dissipation and case temperature
(see Figs 5 and 6):
– All amplifiers switch off for approximately 20 ms
– After 20 ms the amplifiers switch on again
– If the short-circuit persists, the amplifiers switch off for
another 20 ms period and the action repeats
• ESD protection:
– Human body model 2000 V
– Machine model 200 V
• Protection against open ground pins and outputs
short-circuited to supply ground (see Fig.30)
2002 Jan 14
7
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
MGU489
handbook, halfpage
DIAG
MGT605
handbook, halfpage
play normal
operating
active
DDD
normal
normal
DIAG
mute
MUTE/ON
STBY
standby
amplifier
output
amplifier
output
t (ms)
t (ms)
Pull-up resistor = 47 kΩ.
Pull-up resistor = 47 kΩ.
Fig.3 Diagnostic waveforms: standby, mute and
operating mode sequence.
Fig.4 Diagnostic waveforms: dynamic distortion
detection function.
MGT604
handbook, halfpage
MGU498
short-circuit
across load
ndbook, halfpage
DIAG
short to
GND
short to
V
P
DIAG
20 ms
V
P
amplifier
output
20 ms
amplifier
output
20 ms
GND
t (ms)
t (ms)
Pull-up resistor = 47 kΩ.
Pull-up resistor = 47 kΩ.
Fig.5 Diagnostic waveforms: short-circuit across
load.
Fig.6 Diagnostic waveforms: short-circuit to
VP pin or GND.
2002 Jan 14
8
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
7.2
Diagnostic output (DIAG)
With reference to Figs 7 and 8c, the truth table in Table 1
can be made:
The internal circuit of the diagnostic open-drain output is
shown in Fig.7.
Table 1 Truth table.
A pull-up resistor is required if the diagnostic output is
connected to a microcontroller. Figure 8 shows four
possible solutions for fault diagnosis.
HIGH TEMPERATURE
OR SHORT-CIRCUIT OR
DDD
OFFSET
IN1
IN2
Figures 8a and 8b show simple configurations. The output
offset diagnostic cannot trigger the microcontroller
because of the 4-diode stack, only the temperature,
short-circuit and dynamic distortion diagnostic will give an
input LOW level for the microcontroller.
no
no
no
yes
1
0
0
1
1
0
yes
don’t care
In Fig.8c, the diagnostic output is connected to an external
level shifter. Now DIAG pin output can also generate an
input LOW level for the microcontroller.
Assuming that a microcontroller HIGH input level must be
equal to, or greater than 2 V, the following equations are
used to calculate values for resistors R1 and R2:
DIAG
handbook, halfpage
temperature diagnostic
short-circuit diagnostic
≥1
5 V – 4 × Vd
VIN1 > 2 V and VIN1 = 5 V – 4 × Vd – R2 ×
------------------------------
dynamic distortion detection
R1 + R2
where:
output offset diagnostic
5 V is the pull-up supply voltage
Vd is the forward voltage of a diode (0.6 V)
R1 and R2 are the resistors in the level shifter.
PGND
MGT610
2 × R2
5 V – 4 × Vd – 2
Using both equations: R1 >
----------------------------------------
Fig.7 Internal circuit diagnostic output pin DIAG.
thus R1 > 3.3 R2
Therefore, R1 can be 47 kΩ and R2 can be 10 kΩ.
The level shifter shown in Fig.8d is used as a 2-bit
analog-to-digital converter.
2002 Jan 14
9
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
handbook, halfpage
MICRO-
CONTROLLER
V
V
MICRO-
CONTROLLER
R
R
DIAG
DIAG
MGU514
MGU513
a. Internal pull-up.
b. External pull-up.
5 V
5 V
R2
handbook, halfpage
handbook, halfpage
R2
DIAG
DIAG
IN2
MICRO-
CONTROLLER
MICRO-
CONTROLLER
IN1
IN1
R1
R1
MGU515
MGU516
c. Level shifter.
d. Two-pin diagnostics.
Fig.8 Connecting the DIAG output to a microcontroller input.
2002 Jan 14
10
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
7.3
Mute timer and single-pin mute control
The reason for using a square wave input signal for EIAJ
power measurement is illustrated in Fig.9.
The transition time from mute mode to operating mode can
be used to hide plops that occur during switching. This
transition time is determined by the value of the external
capacitor at the MUTE/ON input (see Fig.33). To
guarantee the mute suppression, the resistor value may
not be more than 15 kΩ. The switching can be controlled
by a transistor switch with an open-drain output or a
voltage output with a minimum high level of 5.5 V.
Figure 9a shows a square wave signal with
Vtop
slew rate =
---------
tr
Assuming this square wave is the output signal of an
amplifier, the EIAJ output power is given by
8
3
When controlling with an open-drain output, the high
voltage level also must be at least 5.5 V and should not be
clamped on a lower value by the ESD diode of the
microcontroller. If the minimum high voltage cannot be
guaranteed, an external open-drain transistor or switch to
ground can be used. Charging of the external capacitor at
the MUTE/ON input is done by an internal current source.
1 –
× Vtop × f
2
--
Vtop
P EIAJ
=
×
------------- ------------------------------------------
RL slew rate
where:
RL = load resistor in Ω
Vtop = maximum voltage across the load in V
f = frequency of the square wave in Hz
tr = rise time of the slope in s.
If muting is performed by the microcontroller, the mute
connection to the microcontroller can be omitted. The
mute on and off transitions during start-up and switch-off
are controlled by an internal push-pull current source and
the external capacitor at pin 8 (MUTE/ON).
A sine wave has a lower slew rate than a square wave as
shown in Fig.9b, therefore EIAJ power measurement with
a sine wave will give a lower power value. The maximum
slew rate of a sine wave output signal is given by
Fast mute can be achieved by quickly discharging the
mute capacitor by means of an open-drain transistor
without a series resistor.
δ U out
δ (A × sin(2πf × t))
------------------------------------------------
δt max
=
= 2 π f × A
-----------------
δt max
7.4
Output power
where:
EIAJ power is a power rating which indicates the maximum
possible output power of a specific application at a nominal
supply voltage. The power losses caused by PCB layout,
copper area, connector block, coil, loudspeaker wires, etc.
depend on the applications.
A = amplitude of the output sinewave in V
f = frequency of the output sinewave in Hz.
For a non-clipping sinewave output with amplitude
A = 13 V and frequency f = 1 kHz, the slew rate is
Therefore, the EIAJ power is defined and measured at the
pins of the IC using the following test conditions:
δUout
= 823 V/s
-----------------
δt max
• The supply voltage is 14.4 V measured on the pins of
the TDA8591J
A faster slew rate can be obtained by increasing the
amplitude: for an amplitude of 28 V, the slew rate will
increase to 1.85 V/s. A supply voltage of VP = 14.4 V will
result in a clipped output with a shape similar to a square
wave but with a slower slew rate.
• All channels are loaded with 4 Ω and are driven
simultaneously
• The input signal is a continuous (no burst) square wave:
V = 1 V (RMS); f = 1 kHz
Figure 9c shows the dependency of PEIAJ on slew rate.
Using a square wave input signal, the EIAJ output power
is determined by the drop voltage and bandwidth of the
output stage.
• RMS output power is measured immediately at the start
(cold heatsink) and after 1 minute of operation. The
mean value is the rated EIAJ power.
To have optimum output power performance, the external
heatsink should be chosen carefully. A small heatsink
causes a high junction temperature, resulting in an
increase of the drain-source on-state resistance (RDSon) of
the power amplifiers and a decrease of the maximum
output power.
2002 Jan 14
11
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
V
top
t
r
a.
MGT612
T = 1/f
handbook, halfpage
V
top
t
r
b.
MGT613
T = 1/f
MGT614
45
handbook, halfpage
(1)
P
EIAJ
(W)
44
43
(2)
42
41
0
2
4
6
8
10
c.
SR (V/µs)
(1) PEIAJ(max) (infinite slew rate).
(2) Maximum slew rate of TDA8591J.
Fig.9 Comparison of sine wave and square wave
RMS powers.
2002 Jan 14
12
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VP supply voltage
MIN.
MAX.
18
UNIT
operating
−
V
not operating
−1
−
+45
45
V
V
V
A
with load dump protection (see Fig.10)
VDIAG
IOSM
voltage on pin DIAG
−
45
non-repetitive peak output
current
−
10
IORM
Vsc
repetitive peak output current
−
−
6
A
V
AC and DC short-circuit voltage short-circuit of output pins across
loads and to ground or supply
18
Vrp
reverse polarity voltage
total power dissipation
virtual junction temperature
storage temperature
t ≤ 1 ms
−
6
V
Ptot
Tvj
Tcase = 70 °C
−
80
150
+150
+85
−
W
°C
°C
°C
V
−
Tstg
Tamb
Vesd
−55
−40
2000
200
ambient temperature
electrostatic handling voltage
note 1
note 2
−
V
Notes
1. Human body model: C = 100 pF; Rs = 1500 Ω; all pins have passed all tests to 2500 V to guarantee 2000 V,
according to “General Quality Specification SNW-FQ-611D”, class II, except pin GND, which passed 2200 V,
class Ia.
2. Machine model: C = 200 pF; Rs = 10 Ω; L = 0.75 mH.
MGT601
handbook, halfpage
45
V
P
(V)
14.4
t
t
t
f
r
>2.5 ms
>47.5 ms
Fig.10 Load dump pulse definition.
2002 Jan 14
13
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
9
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
in free air
see Fig.11
VALUE
UNIT
Rth(j-a)
Rth(j-c)
thermal resistance from junction to ambient
thermal resistance from junction to case
40
1
K/W
K/W
virtual junction
OUT2 OUT3
handbook, halfpage
OUT1
OUT4
2 K/W
2 K/W
2 K/W
2 K/W
0.5 K/W
case
MGT602
Fig.11 Equivalent thermal resistance network.
10 QUALITY SPECIFICATION
Quality according to “SNW-FQ-611E”.
11 DC CHARACTERISTICS
Tamb = 25 °C; RL = ∞; VP = VP1 = VP2 = VP3 = 14.4 V; measured in the circuit of Fig.29; unless otherwise specified.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
8.0
14.4
18.0
V
Iq(tot)
Istb
total quiescent current
standby current
120
−
200
2
290
50
−
mA
µA
V
VO
DC output voltage
−
7.2
7.0
7.0
0.4
VP(mute)
low supply voltage mute
operating to mute mode
mute to operating mode
6.0
6.3
−
8.0
8.5
−
V
V
VP(mute)(hys)
VOO
low supply voltage mute
hysteresis
V
output offset voltage
mute mode; VMUTE/ON = 0 V
−
0
0
30
60
mV
mV
operating mode; VMUTE/ON = 5 V −
2002 Jan 14
14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
STBY and MUTE/ON inputs (see Table 2)
VSTBY
control voltage on pin STBY standby mode
0
−
0.8
V
VSTBY(hys)
voltage hysteresis on
pin STBY
−
0.2
−
V
VMUTE/ON
voltage on pin MUTE/ON
mute mode; VSTBY > 2.5 V
−
−
−
0.8
VP
V
V
operating mode; VSTBY > 2.5 V; 5.5
note 1
ISTBY
STBY pin current
VSTBY = 5 V
−
−
−
80
µA
µA
IMUTE/ON
MUTE/ON pin current
VMUTE/ON = 5.5 V
25
−
DIAG output (see Figs 3 to 6)
VDIAG
diagnostic output voltage
IDIAG(sink) = 250 µA
DDD, protection circuits and
temperature pre-warning
active
−
0.3
0.8
V
offset diagnostic active
VDIAG = 14.4 V
2.0
−
2.8
−
3.2
1
V
IL
leakage current
µA
%
THD
total harmonic distortion at VDIAG < 0.8 V
clip detection
−
1.5
−
VOO(det)
Tvj
output offset voltage
detection; note 2
2.0 < VDIAG < 3.2 V
2.5
135
−
4.5
6.5
−
V
virtual junction temperature temperature pre-warning;
145
155
170
°C
°C
°C
VDIAG < 0.8 V
soft thermal clipping;
Gv = −3 to −23 dB
−
temperature shut-down
−
−
Notes
1. With open MUTE/ON pin, the TDA8591J will switch to operating mode (see Section 7.3)
2. VOO(det) is the offset voltage across the load. Pin OFFCAP should never be left open-circuit. If pin OFFCAP is
connected to one of the PGND pins, the offset detection is switched off (see Section 14.4).
Table 2 Mode selection
STBY
MUTE/ON
AMPLIFIER MODE
standby (off)
0
1
1
don’t care
0
1
mute (DC settled)
operating
2002 Jan 14
15
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
12 AC CHARACTERISTICS
VP = VP1 = VP2 = VP3 = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 oC; measured in the circuit of Fig.29; unless otherwise
specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
THD + N = 0.5 %
MIN.
TYP.
MAX.
UNIT
RL = 4 Ω
20
22
−
W
RL = 2 Ω
−
−
34
35
−
−
W
W
THD + N = 1 %; RL = 2 Ω
THD + N = 10 %
RL = 4 Ω
27
28
47
−
−
W
W
RL = 2 Ω
−
EIAJ values
RL = 4 Ω
41.5
−
44
75
26
0.03
0.2
68
−
W
RL = 2 Ω
−
W
Gv
voltage gain
Vi = 40 mV (RMS)
Po = 1 W; f = 1 kHz
Po = 10 W; f = 10 kHz
25
−
27
0.1
−
dB
%
THD + N
total harmonic distortion plus
noise
−
%
αcs
channel separation
channel unbalance
noise output voltage
Vi = 40 mV (RMS); Rs = 0 Ω 56
−
dB
dB
∆Gv
Vn(o)
−
1
Rs = 0 Ω; note 1
operating mode
mute mode
−
70
16
16
68
110
−
µV
µV
µV
dB
−
Vo(mute)
SVRR
output voltage in mute mode
supply voltage ripple rejection
mute mode; Vi = 1 V (RMS)
−
30
−
V
ripple = 2 V (p-p); mute or
54
operating mode; Rs = 0 Ω
Zi
input impedance
Vi ≤ 3 V (RMS)
60
70
70
−
−
kΩ
CMRR
common mode rejection ratio
Rs = 0 Ω;
−
dB
Vcm = 0.35 V (RMS)
BP
power bandwidth
THD + N = 0.5%; Po = −1 dB
−
20 to
−
Hz
with respect to 17 W
20000
fro(l)
low frequency roll-off
high frequency roll-off
at −1 dB; note 2
at −1 dB
−
25
−
−
Hz
fro(h)
150
300
kHz
Notes
1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
2. The frequency response is fixed with external components.
2002 Jan 14
16
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
12.1 Performance curves
Conditions for Figs 12 to 28 unless otherwise specified are: VP = 14.4 V; RL = 4 Ω: f = 1 kHz; 80 kHz filter.
MGW458
MGW457
30
300
handbook, halfpage
handbook, halfpage
G
v
(dB)
28
I
P
(mA)
200
26
24
22
100
20
10
0
0
2
3
4
5
6
10
10
10
10
10
10
20
30
V
(V)
f (Hz)
P
RL = ∞.
Vi = 10 mV.
Fig.12 Supply current as a function of supply
voltage.
Fig.13 Voltage gain as a function of frequency.
MGW459
MGW460
80
120
handbook, halfpage
handbook, halfpage
P
o
P
o
(W)
(W)
100
80
60
40
20
0
60
(1)
(1)
40
(2)
(3)
(2)
20
(3)
0
9
10 11 12 13 14 15 16 17 18
(V)
9
10 11 12 13 14 15 16 17 18
V
V (V)
P
P
One channel driven.
(1) EIAJ values.
One channel driven.
(1) EIAJ values.
(2) THD + N = 10%.
(3) THD + N = 1%.
(2) THD + N = 10%.
(3) THD + N = 1%.
Fig.14 Output power as a function of supply
Fig.15 Output power as a function of supply
voltage; RL = 4 Ω.
voltage; RL = 2 Ω.
2002 Jan 14
17
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
MGW461
MGW462
0
0
handboαok, halfpage
handboαok, halfpage
cs
cs
(dB)
(dB)
−20
−20
−40
−40
−60
−80
(1)
(1)
(2)
−60
(3)
(2)
(3)
−80
−100
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Po = 1 W.
Po = 1 W.
(1) Separation between channels 1 and 3.
(2) Separation between channels 1 and 4.
(3) Separation between channels 1 and 2.
(1) Separation between channels 2 and 1.
(2) Separation between channels 2 and 3.
(3) Separation between channels 2 and 4.
Fig.16 Channel separation as a function of
frequency; channel 1 driven.
Fig.17 Channel separation as a function of
frequency; channel 2 driven.
MGW463
MGW464
0
0
handboαok, halfpage
handboαok, halfpage
cs
cs
(dB)
(dB)
−20
−20
(1) (2)
(3)
−40
−60
−80
−40
−60
−80
(1)
(2)
(3)
−100
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Po = 1 W.
Po = 1 W.
(1) Separation between channels 3 and 1.
(2) Separation between channels 3 and 2.
(3) Separation between channels 3 and 4.
(1) Separation between channels 4 and 1.
(2) Separation between channels 4 and 2.
(3) Separation between channels 4 and 3.
Fig.18 Channel separation as a function of
frequency; channel 3 driven.
Fig.19 Channel separation as a function of
frequency; channel 4 driven.
2002 Jan 14
18
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
MGW465
MGW467
2
2
10
10
handbook, halfpage
handbook, halfpage
THD + N
THD + N
(%)
(%)
10
10
1
1
(1)
(1)
−1
−1
10
10
(2)
(3)
(2)
(3)
−2
−2
10
10
−2
−1
2
−2
−1
2
10
10
1
10
10
10
10
1
10
10
P
(W)
P
(W)
o
o
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig.20 Total harmonic distortion plus noise as a
Fig.21 Total harmonic distortion plus noise as a
function of output power; RL = 4 Ω.
function of output power; RL = 2 Ω.
MGW468
MGW466
2
2
10
10
handbook, halfpage
handbook, halfpage
THD + N
THD + N
(%)
(%)
10
1
10
1
−1
−1
10
10
10
(1)
(1)
(2)
(2)
2
−2
−2
10
2
3
4
5
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Po = 1 W.
(2) Po = 10 W.
(1) Po = 1 W.
(2) Po = 10 W.
Fig.22 Total harmonic distortion plus noise as a
Fig.23 Total harmonic distortion plus noise as a
function of frequency; RL = 4 Ω.
function of frequency; RL = 2 Ω.
2002 Jan 14
19
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
MGW469
MGW470
15
30
handbook, halfpage
handbook, halfpage
P
P
(W)
(W)
10
20
10
0
5
0
10
−3
−2
−1
2
−3
−2
−1
2
10
10
1
10
(W)
10
10
10
10
1
10
P (W)
o
10
P
o
Sine wave input; one channel driven.
Sine wave input; one channel driven.
Fig.24 Power dissipation as a function of output
Fig.25 Power dissipation as a function of output
power; RL = 4 Ω.
power; RL = 2 Ω.
MGW471
MGW472
15
30
handbook, halfpage
handbook, halfpage
P
P
(W)
(W)
10
20
10
0
5
0
10
−3
−2
−1
2
−3
−2
−1
2
10
10
1
10
(W)
10
10
10
10
1
10
P (W)
o
10
P
o
IEC60268 filtered noise; one channel driven.
IEC60268 filtered noise; one channel driven.
Fig.26 Power dissipation as a function of output
Fig.27 Power dissipation as a function of output
power; RL = 4 Ω.
power; RL = 2 Ω.
2002 Jan 14
20
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
MGW473
0
handbook, halfpage
SVRR
(dB)
−20
−40
−60
−80
2
3
4
5
10
10
10
10
10
f (Hz)
Vripple = 2 V (p-p).
Fig.28 Supply voltage ripple rejection as a function
of frequency.
2002 Jan 14
21
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
13 TEST INFORMATION
V
P
100
nF
V
cm
2200 µF
(16 V)
V
1
V
V
P1
P2
13
P3
15
220 nF
R
s
IN1 10
22 nF
OUT1−
OUT1+
3
4 Ω
26 dB
V
in1
5
22 nF
22 nF
OUT2+
OUT2−
9
4 Ω
26 dB
220 nF
R
s
11
IN2 12
22 nF
V
P
V
in2
14 CP
CHARGE
PUMP
TDA8591J
220 nF
CIN 22
100 µF
(6.3 V)
SGND
2
220 nF
R
s
IN3 16
22 nF
OUT3+
19
17
4 Ω
26 dB
V
in3
OUT3−
22 nF
22 nF
OUT4−
OUT4+
25
23
4 Ω
26 dB
220 nF
R
s
IN4
18
20
8
22 nF
STBY
V
in4
INTERFACE
MUTE/ON
+5 V
10 kΩ
6
OFFSET
DETECTION
DIAGNOSTIC
27
DIAG
26 OFFCAP
4
7
21
24
PGND1 PGND2 PGND3 PGND4 GNDHS
MGW451
Fig.29 Test circuit.
22
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
13.1 Protection circuit testing
>
100 µH
V
P
(1)
TDA8591J
OUT−
OUT+
IN
4700 µF
STBY
−
+
14.4 V
battery
GND
MGW453
One channel output shown.
At the start of the test, the 4700 µF capacitor should be discharged.
The amplifier is in standby during test.
(1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.30 Open ground pin test set-up.
>
100 µH
V
P
TDA8591J
(1)
OUT−
OUT+
IN
4700 µF
STBY
−
+
14.4 V
battery
GND
MGW454
One channel output shown.
At the start of the test, the 4700 µF capacitor should be discharged.
The amplifier is in standby during test.
(1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.31 Open power supply (pin VP) test set-up.
23
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
>
100 µH
V
P
fuse
(1)
TDA8591J
OUT−
OUT+
IN
e.g.BZW03C18
4700 µF
−
+
14.4 V
battery
GND
MGW455
(1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.32 Reversed polarity power supply test set-up.
2002 Jan 14
24
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
14 APPLICATION INFORMATION
V
P
2200 µF
(16 V)
100 nF
V
1
V
V
P1
P2
13
P3
15
220 nF
R
s
IN1 10
22 nF
OUT1−
3
2 or 4 Ω
26 dB
V
in1
OUT1+
5
22 nF
22 nF
OUT2+
OUT2−
9
2 or 4 Ω
26 dB
220 nF
R
s
11
IN2 12
22 nF
V
P
V
in2
14 CP
CHARGE
PUMP
TDA8591J
220 nF
CIN 22
100 µF
(6.3 V)
SGND
2
220 nF
R
s
IN3 16
22 nF
OUT3+
19
17
2 or 4 Ω
26 dB
V
in3
OUT3−
22 nF
22 nF
OUT4−
OUT4+
25
23
2 or 4 Ω
26 dB
220 nF
R
s
IN4
18
20
8
22 nF
STBY
V
in4
INTERFACE
MUTE/ON
standby
mute
DIAG
6
OFFSET
DETECTION
to microcontroller
DIAGNOSTIC
27
from
microcontroller
26 OFFCAP
(1)
fast mute
2.2
µF
(10 V)
4
7
21
24
PGND1 PGND2 PGND3 PGND4 GNDHS
MGW452
(1) Not needed with single-pin mute control.
Fig.33 Quad BTL application without offset detection circuit.
25
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
V
P
2200 µF
100 nF
(16 V)
V
1
V
V
P1
P2
13
P3
15
220 nF
R
s
IN1 10
22 nF
OUT1−
OUT1+
3
2 or 4 Ω
26 dB
V
in1
5
22 nF
22 nF
220 kΩ
220 kΩ
OUT2+
OUT2−
9
2 or 4 Ω
22 nF
26 dB
220 nF
R
s
11
IN2 12
V
P
V
in2
14 CP
CHARGE
PUMP
TDA8591J
220 nF
CIN 22
100 µF
(6.3 V)
SGND
2
220 nF
R
s
IN3 16
22 nF
OUT3+
19
17
2 or 4 Ω
26 dB
V
in3
OUT3−
22 nF
22 nF
220 kΩ
220 kΩ
OUT4−
OUT4+
25
23
2 or 4 Ω
22 nF
26 dB
220 nF
R
s
IN4
18
20
8
STBY
V
in4
INTERFACE
2 kΩ
2 kΩ
MUTE/ON
standby
mute
DIAG
6
OFFSET
DETECTION
to microcontroller
DIAGNOSTIC
27
from
microcontroller
1 µF
26 OFFCAP
(1)
fast mute
2.2
µF
(10 V)
MGW476
4
7
21
24
PGND1 PGND2 PGND3 PGND4 GNDHS
(1) Not needed with single-pin mute control.
Fig.34 Quad BTL application with offset detection circuit.
26
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
14.1 Special attention for SMD input capacitors
The loop area of the capacitor connected to pins CP and
PGND2 should be kept as small as possible. For optimum
performance the capacitor used should have a good
frequency performance, for example an SMD ceramic
capacitor. See Figs 35 and 36 for a good PCB layout.
When SMD capacitors are used as input capacitors, low
frequency noise can occur due to stress on the PCB. The
SMD capacitors can operate like small microphones with
sensitivity of 1⁄f. Special attention should be paid to this
issue when selecting SMD capacitors at the four inputs
(MKT capacitors are recommended).
14.4 Offset detection
As shown in Fig.34, to obtain the DC offset information, an
output from each bridge is summed and filtered through
external 220 kΩ resistors and a 1 µF capacitor at
pin OFFCAP. The low frequency roll-off can be chosen
with the resistor/capacitor combination. Because of the
random phase of the DC offset voltage, the capacitor on
pin OFFCAP should not be a conventional electrolytic
capacitor as leakage current in this capacitor would cause
a shift in low frequency roll-off because of no pre-biasing.
14.2 Capacitors on outputs
The TDA8591J is optimized for a capacitor of 22 nF from
each output to ground for RF immunity and ESD. These
capacitors can be replaced by the capacitors on the
connector block.
14.3 EMC precautions
The TDA8591J has an all N-type DMOS output stage. The
main advantage of having the same type of power
transistors in the output stage is symmetrical behaviour for
positive and negative signals (sound quality).
If the offset detection is not used, pin OFFCAP can be
connected to ground, the external components (resistors
of 220 kΩ and 2 kΩ and the capacitor of 1µF) are not
needed and the circuit is as shown in Fig.33.
A charge pump (DC to DC converter with capacitors only)
is used to generate a voltage above the battery voltage to
drive the high-side power. The clock frequency of the
charge pump (2.9 MHz) is chosen above the AM
frequency band. To prevent possible crosstalk in the FM
frequency band, a SIL pad can be used between the rear
of the TDA8591J and the heatsink. This SIL pad is an
electrical isolator and thermal conductor. It is advisable to
connect the power supply lines of the TDA8591J directly to
the power supply on the printed circuit board of the radio,
so that a one-point earth bonding with the tuner supply is
achieved.
14.5 Channel selection
The following recommendation for a four channel
application is given on the basis of the results of the
channel separation measurements and the dissipation
spread within the package:
Front-left = OUT1
Rear-left = OUT2
Rear-right = OUT3
Front-right = OUT4.
The external capacitor of the charge pump (connected to
pin CP) filters and buffers the voltage generated internally.
14.6 Detection of short-circuits
Table 3 Detection of short-circuits in standby, mute and operating modes.
SHORT-CIRCUIT TO SUPPLY
OR GROUND
AMPLIFIER MODE
Standby
SHORT-CIRCUIT ACROSS LOAD
no diagnosis
no diagnosis
Mute (no output signal)
the value of short-circuit that activates no diagnosis and no active protection if
diagnosis and protection depends on
the output offset voltage
short-circuit >100 Ω
Operating (output signal present)
diagnosis and active protection if
no diagnosis and no active protection if
short-circuit <0.4 Ω
short-circuit >100 Ω
2002 Jan 14
27
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
14.7 PCB layout
85.1
39.4
GND
8-18V
V
2.2 µF
P
Out1
float
Out2
Out3
Out4
diag
gnd
On
Mute
TDA8591J
In1 In2
In3 In4
Off
gnd
MGW474
Dimensions in mm.
Fig.35 PCB layout (component side).
28
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
85.1
39.4
220 nF
220 nF
22 nF 22 nF 22 nF 22 nF
47 kΩ
27
GND
22 nF 22 nF 22 nF 22 nF
V
P
1 µF
220 kΩ
2 kΩ 2 kΩ
220 kΩ
220 kΩ
220 kΩ
15 kΩ 47 kΩ
MGW475
Dimensions in mm.
Fig.36 PCB layout (soldering side).
29
2002 Jan 14
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
14.8 PCB design advice
V
P
GND
8 to 18 V
2200 µF
(16 V)
(1)
(2)
220 nF
220 nF
15
kΩ
2.2 µF
(6.3 V)
47
kΩ
47
kΩ
(4)
(3)
1
13 15
14
7
4 21 24 27
3.3
nF
(5)
20
6
8
3
5
DIAG
(6)
OUT1−
(8)
22 nF
OUT1+
22 nF
(7)
2
100 µF
PCB SGND
22
9
OUT2+
(6.3 V)
22 nF
OUT2−
22 nF
TDA8591J
11
220 nF
IN1
10
12
16
18
220 nF
220 nF
220 nF
19
17
OUT3+
IN2
IN3
IN4
22 nF
OUT3−
22 nF
25
23
OUT4+
22 nF
OUT4−
26
2
2
R
R
R
R
22 nF
kΩ kΩ
MGW456
(9)
0.22
R
C =
(1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended.
(2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7.
(3) Switch closed is the mute mode.
(4) Switch open is the standby mode.
(5) A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic.
(6) Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated.
(7) Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together.
(8) The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and
ESD suppression.
(9) Offset detection: if R = 100 kΩ then C = 2.2 nF; if R = 220 kΩ then C = 1 µF. An electrolytic capacitor is not allowed because of the random phase
of the DC offset.
Fig.37 PCB design advice.
2002 Jan 14
30
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
15 PACKAGE OUTLINE
DBS27P: plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm)
SOT521-1
non-concave
x
D
h
D
E
h
view B: mounting base side
A
2
d
A
A
5
4
β
B
j
E
E
1
A
L
3
L
Q
c
2
v
M
1
27
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
A
A
b
c
D
d
D
E
e
e
e
E
E
j
L
L
m
Q
v
w
x
β
Z
2
4
5
p
h
1
2
h
1
3
17.0 4.6 1.15 1.65 0.60 0.5 30.4 28.0
15.5 4.3 0.85 1.35 0.45 0.3 29.9 27.5
12.2
11.8
10.15 1.85 8.4 2.4
9.85 1.65 7.0 1.6
2.4
1.8
2.1
1.8
6
mm
12
2.0 1.0 4.0
4.3
0.6 0.25 0.03 45°
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
SOT521-1
99-01-05
2002 Jan 14
31
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
16 SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
16.1 Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
16.3 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
16.2 Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
300 and 400 °C, contact may be up to 5 seconds.
16.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2002 Jan 14
32
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
17 DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
18 DEFINITIONS
19 DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jan 14
33
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
NOTES
2002 Jan 14
34
Philips Semiconductors
Preliminary specification
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
NOTES
2002 Jan 14
35
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/01/pp36
Date of release: 2002 Jan 14
Document order number: 9397 750 08682
©2020 ICPDF网 联系我们和版权申明