TEA1064A [NXP]
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting; 与拨号接口和传输级动态限流低压多功能电话传输电路
| 型号： | TEA1064A |
| 厂家： | 
NXP |
| 描述： | Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting |
| 文件： | 总36页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1064A
Low voltage versatile telephone
transmission circuit with dialler
interface and transmit level
dynamic limiting
March 1994
Product specification
File under Integrated Circuits, IC03A
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
GENERAL DESCRIPTION
PACKAGE OUTLINES
TEA1064A :20-lead DIL; plastic (SOT146).(1)
The TEA1064A is a bipolar integrated circuit that performs
all the speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech and has a powerful DC
supply for peripheral circuits. The IC operates at line
voltages down to 1.8 V DC (with reduced performance) to
facilitate the use of more telephone sets connected in
parallel. The transmit signal on the line is dynamically
limited (speech-controlled) to prevent distortion at high
transmit levels of both the sending signal and the sidetone.
TEA1064AT:20-lead mini-pack; plastic (SO20;
SOT163A).(2)
Notes
1. SOT146-1; 1998 Jun 18.
2. SOT163-1; 1998 Jun 18.
FEATURES
• Low DC line voltage; operates down to 1.8 V (excluding
polarity guard)
• Voltage regulator with low voltage drop and adjustable
static resistance
• DC line voltage adjustment facility
• Provides a supply for external circuits in two options:
unregulated supply, regulated line voltage;
stabilized supply, line voltage varies with supply
current
• Dynamic limiting (speech-controlled) in transmit
direction prevents distortion of line signal and sidetone
• Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezo-electric microphones
• Asymmetrical high-impedance input (32 kΩ) for electret
microphones
• DTMF signal input
• Confidence tone in the earpiece during DTMF dialling
• Mute input for disabling speech during pulse or DTMF
dialling
• Power-down input for improved performance during
pulse dial or register recall (flash)
• Receiving amplifier for magnetic, dynamic or
piezo-electric earpieces
• Large amplification setting ranges on microphone and
earpiece amplifiers
• Line loss compensation (line current dependent) for
microphone and earpiece amplifiers (not used for DTMF
amplifier)
• Gain control curve adaptable to exchange supply
• Automatic disabling of the DTMF amplifier in
extremely-low voltage conditions
• Microphone MUTE function available with switch
March 1994
2
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
V
LN
CC1
16
1
6
GAR
13
IR
5
4
−
+
QR+
QR−
+
−
TEA1064A
19
2
V
CC2
9
8
MIC+
MIC−
+
−
GAS1
−
+
+
−
3
12
14
15
dB
GAS2
DTMF
MUTE
PD
SUPPLY AND
REFERENCE
LOW
VOLTAGE
CIRCUIT
AGC
CIRCUIT
DYNAMIC
LIMITER
CURRENT
START
REFERENCE
CIRCUIT
11
17
REG
18
AGC
10
7
20
V
STAB
SLPE
MGR056
DLS/MMUTE
EE
Fig.1 Block diagram.
March 1994
3
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
QUICK REFERENCE DATA
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Operating ambient temperature
range
Tamb
−25
−
+ 75
°C
Line current operating range:
normal operation
lline
lline
11
2
−
−
140(1)
11
mA
mA
with reduced performance
Internal supply current:
power-down input LOW
power-down input HIGH
Voltage gain range:
VCC1 = 2.8 V
CC1 = 2.8 V
ICC1
ICC1
−
−
1.3
60
1.6
82
mA
V
µA
microphone amplifier
receiving amplifier
Gv
Gv
44
20
−
−
52
45
dB
dB
Line loss compensation:
gain control range
Gv
5.7
36
6.1
−
6.5
dB
V
exchange supply voltage
range
Vexch
60
exchange feeding bridge
resistance range
Rexch
400
−
1000
Ω
Maximum output voltage swing
on LN (peak-to-peak value)
R15 + R16 = 448 Ω
line = 15 mA
l
Ip = 2 mA
Ip = 4 mA
VLN(p-p)
VLN(p-p)
3.7
3.0
3.95
3.25
4.2
3.5
V
V
Regulated line voltage application
R15 = 0 Ω;
R16 = 392 Ω
lline = 15 mA
Ip = 1.4 mA
Supply for peripherals
Vp
Vp
2.5
2.9
−
−
−
−
V
V
Ip = 2.7 mA;
RREG-SLPE = 20 kΩ
DC line voltage
l
line = 15 mA
without RREG-SLPE
REG-SLPE = 20 kΩ
VLN
VLN
−
−
3.57
4.57
−
−
V
V
R
March 1994
4
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Stabilized supply voltage application
R15 = 392 Ω;
R16 = 56 Ω
line = 15 mA
Supply for peripherals
DC line voltage
l
Ip = 0 to 4 mA
lline = 15 mA
Ip = 2 mA
VCC2-SLPE
3.05
3.3
3.55
V
VLN
VLN
4.2
4.9
4.4
5.1
4.8
5.5
V
V
Ip = 4 mA
Note
1. For TEA1064AT the maximum line current depends on the heat dissipating qualities of the mounted device.
PINNING
1 LN
positive line terminal
2 GAS1
3 GAS2
4 QR−
5 QR+
gain adjustment; transmitting amplifier
gain adjustment; transmitting amplifier
inverting output, receiving amplifier
handbook, halfpage
LN
GAS1
GAS2
QR−
20 SLPE
1
2
V
19
CC2
non-inverting output, receiving
amplifier
3
18 AGC
6 GAR
7 DLS/
gain adjustment; receiving amplifier
decoupling for transmit amplifier
17
16
REG
V
4
QR+
5
CC1
MMUTE dynamic and microphone MUTE input
TEA1064A
GAR
6
15 PD
8 MIC−
inverting microphone input
non-inverting microphone input
current stabilizer
DLS/MMUTE
MIC−
MUTE
7
14
9 MIC+
10 STAB
11 VEE
8
13 IR
MIC+
DTMF
9
12
11
negative line terminal
12 DTMF
13 IR
dual-tone multi-frequency input
receiving amplifier input
mute input
V
STAB
10
EE
MGR057
14 MUTE
15 PD
power-down input
16 VCC1
17 REG
18 AGC
19 VCC2
20 SLPE
internal supply decoupling
voltage regulator decoupling
automatic gain control input
reference voltage with respect to SLPE
Fig.2 Pinning diagram.
slope adjustment for DC
curve/reference for peripheral circuits.
March 1994
5
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
The reference voltage can be used to:
• regulate directly the line voltage (stabilized
FUNCTIONAL DESCRIPTION
Supplies VCC1, VCC2, LN, SLPE, REG and STAB (Fig.3)
(1)
VLN-SLPE = VCC2-SLPE
)
Power for the TEA1064A and its peripheral circuits is
usually obtained from the telephone line. The IC develops
its own supply voltage at VCC1 and regulates its voltage
drop. The internal supply requires a decoupling capacitor
between VCC1 and VEE. The internal current stabilizer is
• to stabilize the supply voltage for peripherals.
Regulated line voltage
In this application the VCC2 pin is connected to the LN pin
as shown in Fig.3. This configuration gives a stabilized
voltage across pins LN and SLPE which, applied via the
low-pass filter R16, C15, provides a supply to the
peripherals that is independent of the line current and
depends only on the peripheral supply current.
set by a 3.6 kΩ resistor between STAB and VEE
.
The DC current flowing into the set is determined by the
exchange supply voltage Vexch, the feeding bridge
resistance Rexch, the subscriber line DC resistance Rline
and the DC voltage (including polarity guard) on the
subscriber set (see Fig.3).
The value of R16 and the level of the DC voltage VLN-SLPE
determine the supply capabilities. In the basic application
R16 = 392 Ω and C15 = 220 µF. The worst-case
peripheral supply current as a function of supply voltage is
shown in Fig.4. To increase the supply capabilities, the DC
voltage VLN-SLPE can be increased by using RVA(REG-SLPE)
or by decreasing the value of R16.
The internal voltage regulator generates a
temperature-compensated reference voltage that is
available between VCC2 and SLPE
[Vref = VCC2-SLPE = 3.3 V (typ.)]. This internal voltage
regulator requires decoupling by a capacitor between REG
and VEE (C3).
(1) The TEA1064A application with regulated line voltage is the
same as is used for TEA1060/TEA1061, TEA1067 and
TEA1068 integrated circuits.
I
+ 0.25 mA
p
R
R1
I
line
I
line
I
SLPE
CC1
V
LN
1
CC1
16
V
19
0.25 mA
CC2
TEA1064A
R
exch
DC
AC
C1
R16
C15
V
exch
17
10
20
11
V
I
p
REG
STAB
SLPE
EE
peripheral
circuits
C3
R5
R9
V
p
MGR058
The voltage VLN-SLPE is fixed to Vref = 3.3 ± 0.25 V. Resistor R16 together with the
line current determine the supply capabilities and the maximum output swing on
the line (no loop damping is necessary).
The line voltage VLN = Vref + ([Iline − 1.55 mA] × R9).
Fig.3 Application with regulated line voltage (stabilized VLN-SLPE).
March 1994
6
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
The DC line voltage on LN is:
VLN = VLN-SLPE + (ISLPE × R9)
VLN = Vref + ([Iline − ICC1 − 0.25 × 10−3 A] × R9)
MGR059
5
handbook, halfpage
I
p
(mA)
in which
4
Vref = 3.3 V ± 0.25 V is the internal reference voltage
between VCC2 and SLPE; its value can be adjusted by
external resistor RVA
3
2
1
0
R9 = external resistor between SLPE and VEE (20 Ω in
basic application).
With R9 = 20 Ω, this results in:
VLN = 3.57 ± 0.25 V at lline = 15 mA
VLN = 4.17 ± 0.3 V at lline = 15 mA,
R
VA(REG-SLPE) = 33 kΩ
VLN = 4.57 ± 0.35 V at lline = 15 mA,
VA(REG-SLPE) = 20 kΩ
2
3
4
V
(V)
p
R
lline = 15 mA; R16 = 392 Ω; R15 = 0 Ω; valid for MUTE = 0 and 1.
Line current has very little influence
The preferred value for R9 is 20 Ω. Changing R9
influences microphone gain, DTMF gain, the gain control
characteristics, sidetone, and the DC characteristics
(especially the low voltage characteristics).
Fig.4 Minimum supply current for peripherals (Ip)
as a function of the peripheral supply
voltage (Vp).
In normal conditions, ISLPE >> (ICC1 + 0.25 mA) and the
static behaviour is equivalent to a voltage regulator diode
with an internal resistance of R9. In the audio frequency
range the dynamic impedance is determined mainly by R1.
The equivalent impedance of the circuit in the audio
frequency range is shown in Fig.6.
The maximum AC output swing on the line at low line
currents is influenced by R16 (limited by current) and the
maximum output swing on the line at high line currents is
influenced by the DC voltage VLN-SLPE (limited by voltage).
In both these situations, the internal dynamic limiter in the
sending channel prevents distortion when the microphone
input is overdriven. The maximum AC output swing on LN
is shown in Fig.5; practical values for R16 are from 200 to
600 Ω and this influences both the maximum output swing
at low line currents and the supply capabilities.
The internal reference voltage VCC2-SLPE can be increased
by external resistor RVA(REG-SLPE) connected between
REG and SLPE. The supply voltage VCC2-SLPE is shown as
a function of RVA(REG-SLPE) in Fig.7. Changing the
reference voltage influences the output swing of both
sending and receiving amplifiers.
At line currents below 8 mA (typ.), the DC voltage dropped
across the circuit is adjusted to a lower level automatically
(approximately 1.8 V at 2 mA). This gives the possibility of
operating more telephone sets in parallel with DC line
voltages (excluding polarity guard) down to an absolute
minimum of 1.8 V. At line currents below 8 mA (typ.), the
circuit has limited sending and receiving levels.
The SLPE pin is the ground reference for peripheral
circuits, therefore inputs MUTE, PD and DTMF are also
referenced to SLPE.
Active microphones can be supplied between VCC1 and
VEE. Low-power circuits that provide only MUTE and/or PD
inputs to the TEA1064A also can be powered from VCC1
.
However VCC1 cannot be used for circuits that provide
DTMF signals to the TEA1064A because VCC1 is referred
to ground.
If the line current lline exceeds ICC1 + 0.25 mA, the voltage
converter shunts the excess current to SLPE via LN;
where ICC1 ≈ 1.3 mA, the value required by the IC for
normal operation.
March 1994
7
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
MGR060
6
handbook, halfpage
V
LN(p-p)
(V)
LN
handbook, halfpage
L
R
R1
eq
4
2
0
p
V
REG
V
CC1
ref
I
=
p
C3
4.7 µF
R9
20 Ω
0 mA
2 mA
4 mA
C1
V
EE
MGR061
10
20
30
I
(mA)
line
Fig.6 Equivalent impedance between LN and
VEE in the application with stabilized
Fig.5 Maximum AC output swing on the line as a
function of line current with peripheral
supply current as a parameter: R15 = 0 Ω;
R16 = 392 Ω.
VLN-SLPE:
R15 = 0 Ω
Leq = C3 × R9 × Rp
Rp = 15 kΩ
MGR062
7.8
V
ref
(V)
6.6
5.4
4.2
3.0
with R
VA
infinite
0
40
80
(REG-SLPE) (kΩ)
120
R
VA
Fig.7 Internal reference voltage VCC2-SLPE as a function of resistor RVA(REG-SLPE) for line currents between 11
and 140 mA.
In the stabilized supply application:
VLN = VCC2-SLPE + ([Ip + 0.25 × 10−3 A] × R15) + ([Iline − 1.55 × 10−3 A] × R9)
In the unregulated supply application (R15 = 0 Ω):
VLN = VCC2-SLPE + ([Iline − 1.55 × 10−3 A] × R9)
March 1994
8
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
Stabilized peripheral supply voltage
the values of external components (especially R15). With
R15 = 392 Ω and R16 = 56 Ω (basic application) the
maximum possible AC output swing on the line as a
function of line current is as shown in Fig.9, the curve
parameter is the peripheral supply current (Ip). Different
values for R15 (from 200 to 600 Ω) maintaining
The configuration shown in Fig.8 provides a stabilized
voltage across pins VCC2 and SLPE for peripheral circuits
(such as dialling and control circuits); the DC voltage
VLN now varies with the peripheral supply current.
The VCC2-SLPE supply must be decoupled by capacitor
C15. For stable loop operation, resistor R16 (≈ 50 Ω) is
connected between VCC2 and SLPE in series with C15.
The voltage regulator control loop is completed by resistor
6 < R15/R16 < 8 give different results (these are described
in the TEA1064A Application Report (1)
.
R15 between LN and VCC2
.
For sets with an impedance of 600 Ω, practical values are:
R15 = 200 to 600 Ω; C15 = 220 µF; C3 = 470 nF. The
ratio R15/R16 ≤ 8 is for stable loop operation with
sufficient phase margin, and R15/R16 ≥ 6 is for
satisfactory set impedance in the audio frequency range.
For sets with complex impedance, the value of C3 and the
ratio R15/R16 are different (further information is given in
the TEA1064A Application Report(1)).
The peripheral supply capability depends mainly on the
available line current, the required AC output swing on the
line, the maximum permitted DC voltage on the line and
(1) Supplied on request.
I
+ 0.25 mA
R15
R1
p
R
line
I
line
I
I
SLPE
CC1
V
LN
CC1
1
16
V
19
0.25 mA
CC2
TEA1064A
R
exch
DC
AC
C1
R16
C15
V
exch
17
10
20
11
V
I
p
REG
STAB
SLPE
EE
peripheral
circuits
C3
R5
R9
V
p
MGR063
Fig.8 Application with stabilized supply voltage for peripheral circuits: R15 = 392 Ω; R16 = 56 Ω.
March 1994
9
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
The DC line voltage on LN is
MGR065
5.5
VLN = VLN-SLPE + (ISLPE × R9).
handbook, halfpage
V
LN-SLPE
Therefore
(V)
VLN = Vref + ([Ip + 0.25 × 10−3 A] × R15) +
5.0
R15 = 511 Ω
([lline − ICC1 − 0.25 × 10−3 A] × R9)
392 Ω
in which:
Vref is the internal reference voltage between VCC2 and
SLPE (the value of Vref can be adjusted by an external
resistor, RVA). Vref = 3.3 V (typ.) without RVA
4.5
4.0
3.5
3.0
301 Ω
Ip is the supply current used by peripheral circuits
R15 is an external resistor between LN and VCC2 (392 Ω
in the basic application)
R9 is an external resistor between SLPE and
VEE (20 Ω in the basic application)
0
1
2
3
4
I
(mA)
p
VCC2-SLPE can be adjusted between approximately 3.3 and 4.3 V by
changing the value of RVA, this results in a parallel-shift of the curves.
The total voltage drop VLN ≈ VLN-SLPE + ([Iline − 1.55 mA] × R9).
MGR064
8
handbook, halfpage
Fig.10 Curves showing the typical voltage drop
between LN and SLPE as a function of the
supply current for peripherals with R15 as a
parameter: VCC2-SLPE = 3.3 V (RVA not
connected).
I
= 4 mA
V
p
LN(p-p)
(V)
6
4
2
0
2 mA
0 mA
LN
handbook, halfpage
L
R
eq
eq
R1
620 Ω
C3
470 nF
R9
20 Ω
10
20
30
I
(mA)
line
V
EE
As different values of R15 and R16 are allowed, different curves
would then apply
MGR066
Fig.9 Maximum output swing on line as a function
of line current with the peripheral supply
current as a parameter; R15 = 392 Ω;
R16 = 56 Ω.
R15
Req = Rp ---------- + 1
R16
Leq = C3 × R9 × Req with Rp= 15 kΩ
Fig.11 Equivalent impedance between LN and
VEE at f > 300 Hz in the application with
stabilized supply voltage for peripheral
circuits.
The DC voltage VLN-SLPE as a function of Ip with R15 as a
parameter is shown in Fig.10. In the audio frequency
range, the dynamic impedance is determined mainly by
R1. The equivalent impedance in the audio range of the
circuit (Fig.8) is shown in Fig.11.
March 1994
10
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
The gain of the microphone amplifier is proportional to
external resistor R7 connected between GAS1 and GAS2
and with this it can be adjusted between 44 dB and 52 dB
to suit the sensitivity of the transducer.
Microphone inputs MIC+ and MIC− and gain pins
GAS1 and GAS2
The TEA1064A has symmetrical microphone inputs, its
input impedance is 64 kΩ (2 × 32 kΩ) and its voltage
amplification is typ. 52 dB with R7 = 68 kΩ. Either
dynamic, magnetic or piezo-electric microphones can be
used, or an electret microphone with a built-in FET buffer.
Arrangements for the microphone types are shown in
Fig.12.
An external 100 pF capacitor (C6) is required between
GAS1 and SLPE to ensure stability. A larger value of C6
may be chosen to obtain a first-order low-pass filter with a
cut-off frequency corresponding to the time constant
R7 × C6.
V
CC1
16
MIC+
MIC−
MIC+
MIC+
MIC−
9
9
8
(1)
MIC−
8
8
9
11
V
EE
MGR067
(c)
(a)
(b)
Fig.12 Microphone arrangements: a) magnetic or dynamic microphone, the resistor (1) may be connected to
reduce the terminating impedance, or for sensitive types a resistive attenuator can be used to prevent
overloading the microphone inputs; b) electret microphone; c) piezo-electric microphone.
means that the maximum output swing on the line will be
higher if the DC voltage dropped across the circuit is
increased.
Dynamic limiter (microphone) pin DLS/MMUTE
A low level at the DLS/MMUTE pin inhibits the microphone
inputs MIC+ and MIC− but has no influence on the
receiving and DTMF amplifiers.
Removing the low level at the DLS/MMUTE pin provides
the normal function of the microphone amplifier after a
short time determined by the capacitor connected to
DLS/MMUTE pin. The microphone mute function can be
realised by a simple switch as shown in Fig.13.
Fig.14 shows the maximum possible output swing on the
line as a function of the DC voltage drop (VLN-SLPE) with
Iline − Ip as a parameter.
handbook, halfpage
DLS/MMUTE
To prevent distortion of the transmitted signal, the gain of
the sending amplifier is reduced rapidly when peaks of the
signal on the line exceed an internally-determined
threshold. The time in which gain reduction is effected
(attack time) is very short. The circuit stays in the
gain-reduced condition until the peaks of the sending
signal remain below the threshold level. The sending gain
then returns to normal after a time determined by the
capacitor connected to DLS/MMUTE (release time).
7
R17
3.3 kΩ
V
EE
11
MGR068
The internal threshold adapts automatically to the DC
voltage setting of the circuit (voltage VLN-SLPE). This
Fig.13 Microphone-mute function.
March 1994
11
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
MGR069
10
I
-I
V
line p
LN(p-p)
(V)
(mA)
8
25
23
21
19
17
15
13
6
4
2
0
11
3
3.5
4
4.5
5
5.5
V
-V (V)
LN SLPE
Fig.14 Maximum output swing on line as a function of the DC voltage drop VLN-SLPE with lline − Ip as a parameter:
R15 = 392 Ω; R16 = 56 Ω; or R15 = 0 Ω and R16 = 392 + 56 = 448 Ω.
The internal threshold level is lowered automatically if the
DC current in the transmit output stage is insufficient. This
prevents distortion of the sending signal in applications
using parallel-connected telephones or telephones
operating over long lines, for example.
Receiving amplifier IR, QR+, QR− and GAR
The receiving amplifier has one input IR and two
complementary outputs, QR+ (non-inverting) and QR−
(inverting). These outputs may be used for single-ended or
differential drive, depending on the type and sensitivity of
the earpiece used (see Fig.15). Gain from IR to QR+ is
typically 31 dB with R4 = 100 kΩ, sufficient for
low-impedance magnetic or dynamic earpieces which are
suitable for single-ended drive. By using both outputs
(differential drive) the gain is increased by 6 dB.
Differential drive can be used when the earpiece
impedance exceeds 450 Ω as with high-impedance
dynamic, magnetic or piezo-electric earpieces.
Dynamic limiting also considerably improves sidetone
performance in over-drive conditions (less distortion;
limited sidetone level).
(1)
(2)
QR+
QR−
QR+
QR+
QR+
5
4
5
4
5
4
5
4
V
QR−
QR−
QR−
EE
11
MGR070
(a)
(b)
(c)
(d)
Fig.15 Alternative receiver arrangements: a) dynamic earpiece with an impedance less than 450 Ω; b) dynamic
earpiece with an impedance more than 450 Ω; c) magnetic earpiece with an impedance more than 450 Ω,
resistor (1) may be connected to prevent distortion (inductive load); d) piezo-electric earpiece, resistor (2)
is required to increase the phase margin (stability with capacitive load).
March 1994
12
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
The output voltage of the receiving amplifier is specified for
continuous-wave drive. Fig.16 shows the maximum output
swing of the receiving amplifier as a function of the DC
voltage drop (VLN). The maximum output voltage will be
higher under speech conditions, where the ratio of the
peak to the RMS value is higher.
Two external capacitors (C4 =100 pF and
C7 = 10 × C4 = 1 nF) ensure stability. A larger value may
be chosen to obtain a first-order low-pass filter. The cut-off
frequency corresponds with the time constant R4 × C4.
The relationship C7 = 10 × C4 must be maintained.
The gain of the receiving amplifier can be adjusted to suit
the sensitivity of the transducer used. The adjustment
range is between 20 dB and 39 dB with single-ended drive
and between 26 dB and 45 dB with differential drive. The
gain is proportional to the external resistor R4 connected
between GAR and QR+. The overall gain between LN and
QR+ can be found by subtracting the attenuation of the
anti-sidetone network (32 dB) from the amplifier gain.
MGR071
1.5
handbook, halfpage
V
QR(rms)
(V)
(1)
(2)
(3)
1.0
0.5
0
Curve (1) is for a differential load of 47 nF (series
resistance = 100 Ω); f = 3400 Hz.
Curve (2) is for a differential load of 450 Ω; f = 1 kHz.
Curve (3) is for a single-ended load of 150 Ω; f = 1 kHz.
3
4
5
6
V
(V)
LN
Fig.16 Maximum output swing of the receiving amplifier as a function of DC voltage drop VLN with the load at the
receiver output as parameter: valid for both supply options; THD = 2%; Iline = 15 mA.
The value of R6 must be chosen with reference to the
exchange supply voltage and its feeding bridge resistance
(see Fig.17 and Table 1). Different values of R6 give the
same line current ratios at the start and the end of the
control range. If automatic line-loss compensation is not
required the AGC pin can be left open, the amplifiers then
give their maximum gain.
Automatic gain control input AGC
Automatic compensation of line loss is obtained by
connecting a resistor (R6) between AGC and VEE. This
automatic gain control varies the gain of the microphone
amplifier and receiving amplifier in accordance with the DC
line current. The control range is 6.1 dB; this corresponds
to a 5 km line of 0.5 mm diameter copper twisted-pair
cable (DC resistance = 176 Ω/km, average
attenuation = 1.2 dB/km). The DTMF gain is not affected
by this feature.
March 1994
13
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
MGR072
R6 = ∞
0
∆A
vd
(dB)
−1
−2
−3
−4
−5
−6
R6 = 66.5 kΩ
93.1 kΩ
118 kΩ
10
20
30
40
50
60
70
80
90
I
(mA)
line
Fig.17 Variation of gain as a function of line current with R6 as a parameter; R9 = 20 Ω.
setting the gain of the microphone amplifier. With
R7 = 68 kΩ the gain is typically 26 dB.
Table 1 Values of R6 giving optimum line-loss
compensation at various values of exchange
supply voltage (Vexch) and exchange feeding
The signalling tones can be heard in the earpiece at a low
level (confidence tone).
bridge resistance (Rexch); R9 = 20 Ω.
Rexch (Ω)
Power-down input PD (see notes 1. and 2.)
400
600
800
R6 (kΩ)
X
1000
During pulse dialling or register recall (timed loop break)
the telephone line is interrupted; as a consequence it
provides no supply for the transmission circuit connected
to VCC1 or for the peripherals between VCC2 and SLPE.
These supply gaps are bridged by the charges in the
capacitors C1 and C15. The requirements on these
capacitors are eased by applying a HIGH level to the PD
input during the time of the loop break. This reduces the
internal supply current ICC1 from (typ.) 1.3 mA to (typ.)
60 µA and switches off the voltage regulator to prevent
36
48
60
84.5
118
X
66.5
93.1
X
X
Vexch
(V)
77.8
66.5
84.5
97.6
MUTE input (see notes 1. and 2.)
MUTE = HIGH enables the DTMF input and inhibits the
microphone and receiving amplifier inputs.
discharge via LN and VCC2
.
MUTE = LOW or open-circuit disables the DTMF input and
enables the microphone and receiving amplifier inputs.
A HIGH level at PD also internally disconnects the
capacitor at REG so that the voltage stabilizer has no
switch-on delay after line interruptions. This minimizes the
contribution of the IC to the current waveform during pulse
dialling or register recall.
Switching MUTE gives negligible clicks at the telephone
outputs and on the line.
Dual-tone multi-frequency input DTMF (see note 1.)
When the power-down facility is not required, the PD pin
can be left open-circuit or connected to SLPE.
When the DTMF input is enabled, dialling tones may be
sent on to the line. The voltage gain between DTMF-SLPE
and LN-VEE is typ. 26 dB less than the gain of the
Side-tone suppression
microphone amplifier and varies with R7 in the same way
as the gain of the microphone amplifier. This means that
the tone level at the DTMF input has to be adjusted after
Suppression of the transmitted signal in the earpiece is
obtained by the anti-sidetone network comprising R1//Zline
,
March 1994
14
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
R2, R3, R8, R9 and Zbal (see Fig.18). Maximum
compensation is obtained when the following conditions
are fulfilled:
Example
The line impedance for which optimum suppression is to
be obtained can be represented by
210 Ω + (1265 Ω // 140 nF). This represents a 5 km line of
0.5 mm diameter copper twisted-pair cable matched with
600 Ω (176 Ω/km; 38 nF/km).
a) R9 × R2 = R1 × (R3 + [R8//Zbal])
b) (Zbal/[Zbal + R8]) = (Zline/[Zline + R1])
If fixed values are chosen for R1, R2, R3 and R9, then
condition a) is always fulfilled provided R8//Zbal << R3.
With k = 0.64 this results in: R8 = 390 Ω;
Zbal = 130 Ω + (820 Ω // 220 nF).
To obtain optimum sidetone suppression, condition b) has
to be fulfilled, resulting in:
The anti-sidetone network for the TEA1060 family shown
in Fig.18 attenuates the signal received from the line by
32 dB before it enters the receiving amplifier. The
attenuation is almost constant over the whole
audio-frequency range.
Zbal = (R8/R1) × Zline = k × Zline
where k is a scale factor; k = (R8/R1).
The scale factor k (value of R8) is chosen to meet the
following criteria:
Alternatively a conventional Wheatstone bridge can be
used as an anti-sidetone circuit (Fig.19). Both bridge types
can be used with either resistive or complex set
impedances. (More information on the balancing of
anti-sidetone bridges can be obtained in our publication
“Versatile speech transmission ICs for electronic
telephone sets”, order number 9398 341 10011).
• compatibility with a standard capacitor from the E6 or
E12 range for Zbal
;
•
Zbal//R8 << R3 to fulfil condition a) and thus ensure
correct anti-sidetone bridge operation;
•
Z
bal + R8 >> R9 to avoid influencing the transmit gain.
In practice Zline varies considerably with the line length and
line type. Therefore the value chosen for Zbal should be for
an average line length giving satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between
Notes
1. The reference used for the MUTE, DTMF and PD
inputs is SLPE.
2. A LOW level for any of these pins is defined by
connection to SLPE, a HIGH level is defined as a
voltage greater than VSLPE + 1.5 V and smaller than
Zbal and the impedance of the average line.
VCC1 + 0.4 V.
March 1994
15
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
LN
R1
R9
R2
Z
line
V
IR
i
m
EE
R
t
R3
Z
R8
bal
SLPE
MGR073
Fig.18 Equivalent circuit of TEA1060 family anti-side-tone bridge.
LN
R1
R9
Z
bal
Z
line
V
IR
i
m
EE
R
t
R8
R
A
SLPE
MGR074
Fig.19 Equivalent circuit of an anti-sidetone network in the Wheatstone bridge configuration.
March 1994
16
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
CONDITIONS
SYMBOL
VLN
MIN.
MAX.
UNIT
Positive line voltage continuous
Repetitive line voltage during
switch-on line interruption
Repetitive peak line voltage
one 1 ms pulse per 5 s
−
−
12
V
V
VLN
13.2
R9 = 20 Ω;
R10 = 13 Ω
(Fig.24)
VLN
ILN
−
−
−
28
V
Line current TEA1064A (note 1)
Line current TEA1064AT (note 1)
Input voltage on pins other than
LN and VCC2
R9 = 20 Ω
R9 = 20 Ω
140
140
mA
mA
ILN
Vi
V
EE−0.7
V
CC1 + 0.7
V
Total power dissipation (note 2)
TEA1064A
R9 = 20 Ω
Ptot
Ptot
Tstg
Tamb
Tj
−
−
714
mW
mW
°C
TEA1064AT
555
Storage temperature range
Operating ambient temperature range
Junction temperature
−40
−25
−
+ 125
+ 75
+ 125
°C
°C
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 20 and 21 to
determine the current as a function of the required voltage and the temperature.
2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum junction temperature of
125 °C.
THERMAL RESISTANCE
From junction to ambient in free air
TEA1064A
Rth j-a
Rth j-a
=
=
70 K/W
90 K/W
TEA1064AT mounted on glass epoxy board 41 × 19 × 1.5 mm
March 1994
17
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
MGR075
160
LN
handbook, halfpage
I
(mA)
140
120
100
80
(1)
(2)
(3)
(4)
60
40
Tamb
Ptot
2
4
6
8
10
-V
12
V
(V)
(1)
(2)
(3)
(4)
45 °C
55 °C
65 °C
75 °C
1143 mW
1000 mW
857 mW
714 mW
LN SLPE
Fig.20 TEA1064A safe operating area.
MSA546
150
LN
handbook, halfpage
I
(mA)
130
110
90
70
50
30
(1)
(2)
(3)
(4)
Tamb
Ptot
(1)
45 °C
55 °C
65 °C
75 °C
888 mW
777 mW
666 mW
555 mW
2
4
6
8
10
-V
12
(2)
(3)
(4)
V
(V)
LN SLPE
Fig.21 TEA1064AT safe operating area.
18
March 1994
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
CHARACTERISTICS
Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; RL = 600 Ω; tested in the circuit of Fig.22 or 23); unless
otherwise specified
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX. UNIT
Supplies LN, VCC1, VCC2 (pins 1, 16, 19)
Reference DC voltage between
VCC2 and SLPE
Iline = 15 mA
Ip = 0; 4 mA
RVA not connected
VCC2-SLPE
3.05
3.3
3.55
1.0
V
Variation with temperature
Variation with line current referred
to 15 mA
I
line = 15 mA
VCC2-SLPE/∆T −3.0
−1.0
mV/K
Iline = 100 mA
∆VCC2-SLPE
−
60
−
mV
With RVA connected between
REG and SLPE
R
VA = 33 kΩ
VA = 20 kΩ
VCC2-SLPE
VCC2-SLPE
3.6
3.8
4.2
4.2
V
V
R
3.95
4.65
DC line voltage:
voltage drop between LN and VEE
MIC−, MIC+
inputs open;
R15 = 392 Ω;
without RVA
Ip = 0 mA
at Iline = 15 mA
VLN
VLN
VLN
VLN
VLN
3.4
4.2
4.9
−
3.6
4.4
5.1
6.1
7.0
4.0
4.8
5.5
7.0
7.8
V
V
V
V
V
Ip = 2 mA
Ip = 4 mA
at Iline = 100 mA
at Iline = 140 mA
Ip = 2 mA
Ip = 2 mA
−
Voltage drop under low current
conditions
Ip = 0 mA
I
line = 2 mA
Iline = 4 mA
line = 7 mA
VLN
VLN
VLN
VLN
−
−
−
−
1.8
2.2
3.2
3.5
−
−
−
−
V
V
V
V
I
Iline = 11 mA
Internal supply current ICC1
:
current into pin VCC1
VCC1 = 2.8 V
PD = LOW
PD = HIGH
ICC1
ICC1
−
−
1.3
60
1.6
82
mA
µA
Microphone inputs MIC−, MIC+
(pins 8, 9)
Input impedance:
differential
Zi
51
25.5
−
64
77
38.5
−
kΩ
kΩ
dB
single-ended
Zi
32.0
82
Common mode rejection ratio
CMRR
March 1994
19
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PARAMETER
CONDITIONS
Iline = 15 mA;
R7 = 68 kΩ
SYMBOL
MIN.
TYP.
MAX. UNIT
Voltage gain (see Fig.22)
Gv
51
52
53
dB
dB
Variation of Gv with frequency,
referred to 0.8 kHz
f = 300 and 3400 Hz ∆Gvf
−0.5
± 0.1
+ 0.5
Variation of Gv with temperature,
referred to 25 °C
without R6;
Iline = 50 mA;
Tamb = −25 to + 75 °C ∆GvT
−
± 0.2
−
dB
DTMF input (pin 12)
Input impedance
Zi
16.8
25
20.7
26
24.6
27
kΩ
Voltage gain (see Fig.22)
I
line = 15 mA;
R7 = 68 kΩ
Gv
dB
Variation of Gv with frequency,
referred to 0.8 kHz
f = 300 and 3400 Hz ∆Gvf
f = 697 and 1633 Hz ∆Gvf
−0.5
−0.2
± 0.1
+ 0.5
dB
dB
± 0.05 + 0.2
Variation of Gv with temperature,
referred to 25 °C
I
line = 50 mA;
amb = −25 to + 75°C ∆GvT
T
−
± 0.2
0.5
dB
dB
Gain adjustment inputs GAS1, GAS2
(pins 2, 3)
Transmitting amplifier,
gain adjustment range
∆Gv
−8
−
+ 0
Sending amplifier output LN (pin 1)
Dynamic limiter
Output voltage swing
(peak-to-peak value)
Iline = 15 mA;
R7 = 68 kΩ;
Ip = 0 mA;
V
i(rms) = 3.6 mV
VLN(p-p)
THD
3.6
−
4.0
1.5
2.8
4.5
V
Total harmonic distortion
Vi = 3.6 mV + 10 dB
Vi = 3.6 mV + 15 dB
2.0
%
%
THD
−
10.0
Output voltage swing
(peak-to-peak value)
Vi = 3.6 mV + 10 dB
Ip = 2 mA
VLN(p-p)
VLN(p-p)
3.7
3.0
3.95
3.25
4.2
3.5
V
V
Ip = 4 mA
Ip = 0 mA;
I
line = 7 mA
Ip = 0 mA;
line = 4 mA
VLN(p-p)
−
−
2
1
−
−
V
V
I
VLN(p-p)
March 1994
20
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PARAMETER
CONDITIONS
C16 = 470 nF
SYMBOL
MIN.
TYP.
MAX. UNIT
Dynamic behaviour of limiter
attack time, Vmic jumps from
2 mV to 40 mV
tatt
−
1.5
5.0
ms
ms
release time, Vmic jumps from
40 mV to 2 mV
trel
50
150
−
Noise output voltage (RMS value)
lline = 15 mA;
R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve) Vno(rms)
−
−72
−
dBmp
Receiving amplifier input IR (pin 13)
Input impedance
Zi
17
21
25
kΩ
Receiving amplifier outputs QR− QR+
(pins 4, 5)
Output impedance
Voltage gain
single-ended
Fig.23;
Zo
−
4
−
Ω
I
line = 15 mA;
R4 = 100 kΩ
single-ended; RT = 300 Ω
differential; RT = 600 Ω
Variation with frequency,
referred to 0.8 kHz
Gv
Gv
30
36
31
37
32
38
dB
dB
f = 300 and 3400 Hz ∆Gvf
−0.5
−0.2
0
dB
Variation with temperature,
referred to 25 °C
without R6;
Iline = 50 mA;
Tamb = −25 to +75 °C ∆GvT
−
± 0.2
−
dB
Output voltage (RMS value)
THD = 2%;
sinewave drive;
R4 = 100 kΩ;
Iline = 15 mA
Ip = 0 mA
single-ended; RT = 150 Ω
differential; RT = 450 Ω
Vo(rms)
Vo(rms)
Vo(rms)
Vo(rms)
−
−
−
−
0.22
0.35
0.39
0.64
−
−
−
−
V
V
V
V
Ip = 2 mA
Ip = 0 mA
Ip = 2 mA
differential; CT = 47 nF;
(100 Ω series resistor); f = 3400 Hz
Ip = 0 mA
Ip = 2 mA
Vo(rms)
Vo(rms)
−
−
0.57
0.9
−
−
V
V
March 1994
21
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PARAMETER
CONDITIONS
Ip = 0 mA;
SYMBOL
MIN.
TYP.
MAX. UNIT
Output voltage (RMS value)
THD = 10%;
sinewave drive;
R4 = 100 kΩ;
single-ended;
RT = 150 Ω;
Iline = 4 mA
Vo(rms)
−
25
−
mV
mV
I
line = 7 mA
Vo(rms)
−
160
−
Noise output voltage (RMS value)
Iline = 15 mA;
R4 = 100 kΩ;
psophometrically
weighted
(P53 curve);
pin IR open
single-ended;
RT = 300 Ω;
Vno(rms)
−
−
45
90
−
−
µV
µV
differential;
RT = 600 Ω
Vno(rms)
Noise output voltage (RMS value)
in circuit of Fig.23;
S1 in position 2;
200 Ω between
MIC+ and MIC−;
single-ended;
RT = 300 Ω
R7 = 68 kΩ
Vno(rms)
Vno(rms)
−
−
100
65
−
−
µV
µV
R7 = 24.9 kΩ
Gain adjustment input GAR (pin 6)
Receiving amplifier,
gain adjustment range
∆Gv
−11
−
−
+8
dB
V
MUTE INPUT (pin 14)
1.5 +
VSLPE
VCC1
+ 0.4
Input voltage HIGH
VIH
0.3 +
VSLPE
Input voltage LOW
VIL
0
−
V
Input current
Imute
−
11
20
µA
Change of microphone amplifier
gain at mute-ON
MUTE = HIGH
−∆Gv
−
100
−
dB
March 1994
22
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PARAMETER
Voltage gain from input
CONDITIONS
SYMBOL
MIN.
TYP.
MAX. UNIT
DTMF-SLPE to QR+ output
with mute-ON
MUTE = HIGH;
single-ended load;
RL = 300 Ω
Gv
−
−18
−
dB
V
Power-down input PD (pin 15)
1.5 +
VSLPE
VCC1
+ 0.4
Input voltage HIGH
VIH
−
0.3 +
VSLPE
Input voltage LOW
Input current
VIL
IPD
0
−
V
−
5
10
µA
Automatic gain control input AGC
(pin 18)
Controlling the gain from
IR (pin 13) to QR+, QR−
(pins 4, 5) and the gain
from MIC+, MIC− (pins 8, 9)
to LN (pin 1)
R6 = 93.1 kΩ
(between pins
18 and 11)
gain control range with respect to
I
line = 15 mA
Iline = 75 mA
−Gv
Iline
5.7
−
6.1
24
6.5
−
dB
Highest line current
for maximum gain
Lowest line current
for minimum gain
mA
mA
dB
Iline
−
61
−
Change of gain
between Iline = 15 and 35 mA
−∆Gv
0.9
1.4
1.9
Microphone mute
input DLS/MMUTE (pin 7)
Input voltage low
VEE
0.3
+
VIL
VEE
−
V
Input current at low
input voltage
IIL
−85
−60
−35
µA
Release time after a low
level on pin 7
C16 = 470 nF
trel
−
30
−
ms
Change of microphone amplifier
gain at low input voltage on
pin 7
−∆Gv
−
100
−
dB
March 1994
23
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
R15
a
392 Ω
I
R1
line
620 Ω
19
16
1
V
V
CC1
LN
CC2
13
9
4
5
6
2
3
100 µF
QR−
QR+
IR
R16
56 Ω
V
o
R
L
MIC+
600 Ω
V
i
8
R4
100
kΩ
MIC−
C4
100 pF
C1
100 µF
12
14
15
7
GAR
TEA1064A
DTMF
MUTE
C7 1 nF
11 to
140 mA
GAS1
GAS2
I
R7
68
kΩ
p
PD
10
µF
C6
DLS/MMUTE
V
100 pF
C15
220
µF
REG
17
C3
AGC
18
STAB
10
SLPE
20
EE
V
i
11
C16
R5
3.6
kΩ
470 nF
R9
20 Ω
470
nF
R6
MGR076
For measuring the gain from MIC+ and MIC− the MUTE input should be LOW
or open-circuit; for measuring the DTMF input, the MUTE input should be HIGH.
Inputs not being tested should be open-circuit.
Fig.22 Test circuit for defining voltage gain of MIC−, MIC+ and DTMF inputs; voltage gain (Gv) is defined as
20 log Vo / Vi .
March 1994
24
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
R15
392 Ω
I
R1
line
620 Ω
R2
130 kΩ
19
16
1
100 nF
V
V
LN
10 µF
S1
CC2 CC1
2
1
13
9
4
5
QR−
QR+
100 µF
IR
R16
56 Ω
Z
V
T
o
MIC+
R
L
600 Ω
8
100
µF
R4
100
kΩ
MIC−
C4
100 pF
C1
10
µF
12
14
15
7
6
2
3
GAR
TEA1064A
DTMF
MUTE
C7 1 nF
11 to
140 mA
V
i
GAS1
GAS2
R3
3.92 kΩ
I
R7
68
kΩ
p
PD
C6
100 pF
DLS/MMUTE
V
C15
220
µF
R8
390
Ω
130 Ω
REG
17
C3
AGC
18
STAB
10
SLPE
20
EE
11
C16
470 nF
R5
3.6
kΩ
220
nF
820
Ω
R9
20 Ω
470
nF
R6
MGR077
bnok,lfuapgedwith
Fig.23 Test circuit for defining voltage gain of the receiving amplifier, voltage gain (Gv) is defined as
20 log Vo / Vi (with S1 in position 1).
APPLICATION INFORMATION
The basic application circuit is shown in Fig.24 and some typical applications are shown in Figs 25, 26 and 27.
In the basic application, the circuit provides two possibilities for supplies to peripheral circuits:
• regulated line voltage VLN (stabilized VLN-SLPE) and unregulated supply voltage for peripheral circuits, the supply
voltage is dependent only on the peripheral supply current. This application is the same as that used for
TEA1060/TEA1061, TEA1067 and TEA1068;
• stabilized supply voltage for peripherals (VCC2-SLPE), the DC line voltage depends on the current flowing to the
peripheral circuits.
March 1994
25
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apgeitwdh
R15
392 Ω
R1
620 Ω
1
16
C1
100 µF
R10
13 Ω
R2
130 kΩ
LN
V
CC1
C5
13
4
BAS11
IR
V
CC2
(2×)
100 nF
R16
56 Ω
QR−
QR+
GAR
MIC+
MIC−
+
R13
telephone
line
12
14
15
BZW14
(2×)
R3
3.92 kΩ
DTMF
MUTE
5
from dial
and
control circuits
C4
100 pF
R4
100 kΩ
TEA1064A
6
9
8
PD
C7
1 nF
C15
220 µF
−
R14
7
DLS/MMUTE
V
SLPE GAS1 GAS2 REG AGC STAB
EE
R17
3.3 kΩ
20 17 18 10
2
3
11
R8
390 Ω
R7
68
kΩ
C16
470
nF
C3
470
nF
R5
3.6
kΩ
C6
100 pF
R6
Z
bal
R9
20 Ω
MGR078
Fig.24 Basic application of the TEA1064A with stabilized supply for peripherals, shown here with a piezo-electric earpiece and DTMF dialling.
The diode bridge and R10 limit the current into, and the voltage across, the circuit during line transients. A different protection
arrangement is required for pulse dialling or register recall.
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
For the basic application giving regulated line voltage the above circuit is changed as follows:
− R15 must be short-circuited;
− the value of R16 is changed to 392 Ω;
− the value of C3 is changed to 4.7 µF.
LN
V
V
DD
CC2
DTMF
DTMF
M
cradle
contact
TEA1064A
PCD3310
MUTE
PD
FL
V
V
SLPE
EE
SS
MGR079
telephone
line
BST76A
Fig.25 Typical DTMF-pulse set application circuit (simplified) showing the TEA1064A with the CMOS bilingual
dialling circuit PCD3310; the broken line indicates optional flash (register recall by timed loop break).
LN
V
V
DD
CC2
DTMF
cradle
contact
PCD332x
FAMILY
MUTE
PD
TEA1064A
M
DP
V
V
SLPE
EE
SS
MGR080
telephone
line
BST76A
DP/flash
Fig.26 Typical pulse dial set application circuit (simplified) showing the TEA1064A with one of the PCD332X
family of CMOS interrupted current-loop dialling circuits.
March 1994
27
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
LN
V
V
DD
CC2
DTMF
TONE
M
cradle
contact
TEA1064A
PCD3344
MUTE
PD
DP
V
V
SLPE
EE
SS
telephone
line
2
I C-bus
BST76A
DP/flash
16-DIGIT
LCD
PCF8577
LCD MODULE
MGR081
Fig.27 Typical dual-standard (pulse and DTMF) feature phone application circuit (simplified) showing the
TEA1064A and the PCD3344 CMOS telephone microcontroller with on-chip DTMF generator plus
I2C-bus.
March 1994
28
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
PACKAGE OUTLINES
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
M
H
20
11
pin 1 index
E
1
10
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
A
A
(1)
(1)
Z
1
2
UNIT
mm
b
b
c
D
E
e
e
1
L
M
M
H
w
1
E
max.
min.
max.
max.
1.73
1.30
0.53
0.38
0.36
0.23
26.92
26.54
6.40
6.22
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
2.0
0.068
0.051
0.021
0.015
0.014
0.009
1.060
1.045
0.25
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.078
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-05-24
SOT146-1
SC603
March 1994
29
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT163-1
075E04
MS-013AC
March 1994
30
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
March 1994
31
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1994
32
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
NOTES
March 1994
33
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
NOTES
March 1994
34
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
TEA1064A
NOTES
March 1994
35
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5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/00/02/pp36
Date of release: March 1994
Document order number: 9397 750 nnnnn
相关型号：
TEA1064A/C2
IC TELEPHONE SPEECH CKT, PDIP20, 0.300 INCH, PLASTIC, SOT-146, DIP-20, Telephone Circuit
NXP
TEA1064AT
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
NXP
TEA1064B
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
NXP
TEA1064BT
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
NXP
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