TEA5551T [NXP]
1-chip AM radio; 1片AM无线电
| 型号： | TEA5551T |
| 厂家： | 
NXP |
| 描述： | 1-chip AM radio |
| 文件： | 总17页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA5551T
1-chip AM radio
October 1990
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
GENERAL DESCRIPTION
The TEA5551T is a 1-chip monolithic integrated radio circuit which is designed for use as a pocket receiver with
headphones in a supply voltage range (V ) of 1.8 V to 4.5 V.
S
The circuit consists of a complete AM part and dual AF amplifier with low quiescent current. The AF part has low radiation
(HF noise) and good overdrive performance. The dual AF amplifier makes the device suitable for operation in an AM/FM
stereo receiver with or without stereo cassette player. The IC has a 1-pin switch for AM or other applications.
Features
• Low voltage operation (V = 1.8 V to 4.5 V)
S
• Low current consumption (I = 5 mA at V = 3 V)
tot
S
• All pins provided with ESD protection
AM part
• High sensitivity (V = 1.5 µV for V = 10 mV)
i
o
• Good IF suppression
• Good signal handling (V
= 80 mV)
i(max)
• Switch for AM or other applications
• Short waveband (> 40 MHz)
AF part
• A fixed integrated gain of 32 dB
• Few external components required
• Very low quiescent current
• Low HF radiation and good AF overdrive performance
• 0 to 20 kHz limited frequency response
• 25 mW per channel output power in 32 Ω
October 1990
2
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
QUICK REFERENCE DATA (at T
= 25 °C)
amb
PARAMETER
Supply voltage
CONDITIONS
SYMBOL
MIN.
1.8
TYP.
3.0
MAX.
4.5
UNIT
V
V
S
Supply current
I + I
−
6
−
mA
5
10
m = 0.3
AM part
RF sensitivity
RF input voltage
V
= 10 mV
V
V
V
V
−
−
−
−
−
−
1.5
15
10
80
0.8
80
−
−
−
−
−
−
µV
µV
mV
mV
%
o(AF)
i(RF)
S/N = 26 dB
S/N = 50 dB
i(RF)
i(RF)
o(AF)
AF output voltage
V
V
= 1 mV
i(RF)
i(RF)
Total harmonic distortion
Signal handling capability
= 100 µV to 30 mV
THD
m = 0.8; THD = 10%
both channels driven
V
mV
i(RF)
AF part
Output power
R = 32 Ω; THD = 10%
L
at V = 3.0 V
P
P
−
−
−
−
25
60
32
50
−
−
−
−
mW
mW
dB
S
o
at V = 4.5 V
S
o
Voltage gain
P = 10 mW
G
o
v
Channel separation
1 kHz
α
dB
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 25.
October 1990
3
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Fig.1 Block diagram.
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
PINNING
1
2
3
4
5
6
7
8
AM GND
9
AF output amplifier 2
AM mixer output
AM AGC
10 AF supply voltage (V )
S
11 AF + input amplifier 2
12 AF − input amplifier 1
13 AM detector output
14 AM oscillator
AM-IF input
AM supply voltage (V )
P
AF + input amplifier 1
AF GND
15 AM−RF input
AF output amplifier 1
16 AM−RF input
Fig.2 All pins provided with ESD protection diodes to substrate.
5
October 1990
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Supply voltage
V
−
−
−
−
6
V
S
Supply current (peak)
I
150
150
5
mA
°C
s
M
Crystal temperature
T
c
Short-circuit protection
V = 4.5 V
t
S
sc
Total power dissipation
P
see Fig.3
+150
+60
tot
Storage temperature range
Operating ambient temperature range
T
T
−65
−25
°C
°C
stg
amb
QUALITY
In accordance with UZW-BO/FQ-0601.
Operating life endurance verified 2000 hours at T = 85 °C.
j
The product meets the 600 V ESD on all pins (HBM specification UZW-BO/FQ-A302).
THERMAL RESISTANCE
From junction to ambient
R
=
110 K/W
th j-a
Fig.3 Power derating curve.
October 1990
6
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
DC CHARACTERISTICS
All voltages are referenced to pin 1 and pin 7; all input currents are positive; all parameters are measured in test circuit
of Fig.6 at V = 3 V; T = 25 °C unless otherwise specified
S
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
Voltages
pin 5
V
1.8
3.0
4.5
V
S
V
V
1.6
1.8
2.8
3.0
4.3
4.5
V
V
5
pin 10
10
HF part
Total current consumption (pin 5)
I
I
I
−
−
−
2.2
−
−
−
mA
µA
µA
5
Oscillator current (pin 14)
100
200
14
2
Mixer current (pin 2)
Voltages
pin 3
V
V
V
V
−
−
−
−
150
600
1.1
1.1
−
−
−
−
mV
mV
V
3
pin 13
13
15
16
pin 15
pin 16
V
AF part
Total current consumption (pin 10)
Input bias current
(pin 11 connected to pin 16)
DC output voltage
pin 8
I
I
−
−
4.0
40
−
−
mA
nA
5
+ I
11
16
V
V
-
1.5
1.5
−
−
V
V
8
pin 9
−
9
October 1990
7
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at V = 3 V; T
= 25 °C unless otherwise specified.
S
amb
RF conditions: Input frequency 1 MHz; 30% modulation where f
= 1 kHz; unless otherwise specified.
mod
PARAMETER
RF sensitivity
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
RF input voltage
Loss in sensitivity
V
V
= 10 mV
= 10 mV;
V
−
−
1.5
−
−
µV
o(AF)
i(RF)
o(AF)
V = 1.8 V
∆V
6
dB
S
i(RF)
Noise
Signal-to-noise ratio for RF
input signal voltage of
V
V
V
= 2 µV
= 15 µV
= 1 mV
S/N
S/N
S/N
−
−
−
6
−
−
−
dB
dB
dB
i(RF)
i(RF)
i(RF)
26
46
AF output voltage
V
V
= 1 mV
= 1 mV;
V
V
−
−
80
55
−
−
mV
mV
i(RF)
o(AF)
i(RF)
V = 1.8 V
S
o(AF)
Total harmonic distortion
V
= 100 µV
i(RF)
to 30 mV
= 80 mV;
THD
THD
−
−
0.8
10
−
−
%
%
V
i(RF)
m = 0.8
AGC range
Change in RF input voltage
for 10 dB change in AF
output voltage
V
= 50 mV
V
V
/
i(RF1)
i(RF1)
−
−
86
3
−
−
dB
i(RF2)
Z
kΩ
Optimum source impedance
IF suppression
source
at V
= 10 mV
note 1
f = 1468 kHz
osc
α
−
20
−
dB
o(AF)
Oscillator (pin 14)
Oscillator voltage
V
V
−
−
100
*
−
−
mV
mV
i
V = 1.5 V
5
i
Note to the AC characteristics
Vi at fi = 468 kHz
1. α =
----------------------------------------------
Vi at fi = 1 MHz
* Value to be fixed.
October 1990
8
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at V = 3 V; T
= 25 °C unless otherwise specified. RF conditions:
amb
S
f = 1 kHz; R = 32 Ω; unless otherwise specified.
L
PARAMETER
Output power
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
THD = 10%
THD = 10%; V = 1.8 V
P
−
−
−
−
25
−
−
−
−
mW
o
o
o
P
P
8
mW
mW
%
S
THD = 10%; V = 4.5 V
60
0.5
S
P = 10 mW
THD
Total harmonic distortion
Voltage gain
o
P = 10 mW
G
−
32
−
dB
o
v
Noise
Noise output voltage
R = 5 kΩ; B = 15 kHz
V
V
−
−
240
20
−
−
µV
µV
S
no
HF noise output voltage
R = 5 kΩ; B = 5 kHz;
S
f = 500 kHz
no(RF)
Input circuit
Input impedance
Mute switch
pin 11 connected to pin 12 Z
−
−
3
−
−
MΩ
i
AC impedance
(pin 13 to ground)
V = 0 V; I = 0.32 mA
R
S
200
Ω
5
13
October 1990
9
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
Conditions: f = 1 MHz; f = 1 kHz; V = 3 V; R = 50 Ω; m = 0.3 (unless otherwise specified).
o
m
S
g
Fig.4 Typical signal (S) and noise (N) output voltages, where V is the AF output voltage at pin 13, as a function
o
of the input voltage V . V is the input voltage at pin 16. Also shown is the total harmonic distortion (THD).
i
i
Conditions: V = 3 V and 4.5 V; R = 32 Ω; f = 1 kHz.
S
L
Fig.5 Total distortion (d ) as a function of output power (P ).
tot
o
October 1990
10
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Coil data:
L1
L2
L3
7MCS2199
7MCS2197
7BRS10869X
Fig.6 Test circuit.
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Coil data:
L1
L2
L3
7MCS2199
7MCS2197
7BRS10869X
Fig.7 Application circuit.
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
COIL DATA
AM coils (Figs 6 and 7)
Fig.8 IF bandpass filter (L1). TOKO sample no. 7MCS2199.
Fig.9 IF bandpass filter (L2). TOKO sample no. 7MCS2197.
13
October 1990
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
Fig.10 Oscillator coil (L3). TOKO sample no. 7BRS10869X.
October 1990
14
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT109-1
076E07S
MS-012AC
October 1990
15
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
October 1990
16
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 1990
17
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