TFF1004HN [NXP]
Integrated mixer oscillator PLL for satellite LNB; 集成混频器振荡器锁相环用于卫星LNB
| 型号： | TFF1004HN |
| 厂家： | 
NXP |
| 描述： | Integrated mixer oscillator PLL for satellite LNB |
| 文件： | 总19页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Rev. 01 — 25 August 2008
Product data sheet
1. General description
The TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block (LNB)
convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
2. Features
I Pre-amplifier, mixer, buffer amplifier and PLL synthesizer in one IC
I Alignment-free concept
I Crystal controlled LO frequency generation
I Low phase noise
I Switched LO frequency (9.75 GHz and 10.6 GHz)
I Low spurious
3. Applications
I Ku band LNB converters for digital satellite reception (DVB-S)
4. Quick reference data
Table 1.
Quick reference data
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
VCC
supply voltage
RF input and IF output AC coupled
RF input and IF output AC coupled
low band
3.0 3.3 3.6
V
[1][2]
ICC
supply current
-
-
102 125 mA
[2][3][4][5
]
NFSSB
single sideband noise figure
9
10
dB
[2][4][5][6
]
high band
-
9
10
dB
[2][3][5]
[2][5][6]
Gconv
conversion gain
low band
26 32 35
26 32 35
dB
dB
high band
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 1.
Quick reference data …continued
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IP3O
output third-order intercept point carrier power = −10 dBm (measured at output);
worst case is given.
[2][3][7][8
]
low band
10
10
-
-
-
-
dBm
dBm
[2][6][7][8
]
high band
[1] DC values.
[2] See corresponding graph in Section 13.1.2 “Parameters as function of temperature”.
[3] Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz.
[4] Measured with band-pass filter according to Figure 4 and Figure 5.
[5] See corresponding graph in Section 13.1.1 “Parameters as function of frequency”.
[6] High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz.
[7] measured in 50 Ω environment and calculated back towards a 75 Ω environment.
[8] measured with carriers depicted in Table 10.
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
TFF1004HN/N1 HVQFN24
plastic, heatsink very thin quad flat package; no leads; 24 terminals;
SOT616-1
body 4 × 4 × 0.85 mm
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
2 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
6. Block diagram
V
CC(MIX)
24
13
14
15
V
CC(IF)
19
20
RF1_GND
RF1_GND
IF_GND
IF_GND
mixer
21
16
RF_IN
IF_OUT
22
23
17
18
RF2_GND
RF2_GND
IF_GND
IF_GND
10
12
REG_V_VCO
VCO_GND
V
V
PLL_LF
11
CC(XO)
4
CC(PLL)
2
5
6
3
XO_TANK
XO_XTAL
XO_GND
PFD
CHARGE
PUMP
TFF1004HN
BANDGAP
VOLTAGE
DIVIDER
REFERENCE
CIRCUIT
7
1
8
9
LO_SEL
PLL_GND
GND
BG_GND
V
001aai387
CC(BG)
Fig 1. TFF1004HN/N1 block diagram
7. Functional diagram
LO_SEL
V
TFF1004HN/N1
CC
IF gain
mixer
PLL
9.75/10.6 GHz
001aai388
Fig 2. Functional diagram
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
3 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
8. Pinning information
8.1 Pinning
terminal 1
index area
1
2
3
4
5
6
18
17
16
15
14
13
PLL_GND
IF_GND
IF_GND
IF_OUT
IF_GND
IF_GND
V
CC(PLL)
XO_GND
TFF1004HN/N1
V
CC(XO)
XO_TANK
XO_XTAL
V
CC(IF)
001aai389
Transparent top view
Fig 3. Pin configuration
8.2 Pin description
Table 3.
Symbol
GND
Pin description
Pin
0
Description
ground (exposed die pad)
ground [1]
PLL_GND
VCC(PLL)
XO_GND
VCC(XO)
1
2
PLL supply voltage. Decouple against pin 1.
ground [1]
3
4
crystal oscillator supply voltage. Decouple against pin 3.
crystal oscillator tank
XO_TANK
XO_XTAL
5
6
50 MHz. Crystal connection. Connect other crystal terminal to
GND.
LO_SEL
BG_GND
VCC(BG)
7
8
9
select high or low band [2]
ground [1]
internal regulator supply. Decouple against pin 8.
decoupling of the internal VCO supply
loop filter PLL. Connect loop filter between this pin and pin 10.
ground [1]
REG_V_VCO 10
PLL_LF
VCO_GND
VCC(IF)
11
12
13
IF-buffer supply voltage. Decouple against pin 14.
IF_GND
IF_OUT
14, 15, 17, 18 ground [1]
16
IF-buffer output. Connect RF choke coil between this pin and
pin 13.
RF1_GND
19, 20
ground [1]
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
4 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 3.
Pin description …continued
Symbol
RF_IN
Pin
21
Description
RF input. AC coupling required.
RF2_GND
VCC(MIX)
22, 23
24
ground [1]
mixer supply voltage. Decouple against pin 23.
[1] Connect this to the exposed die pad.
[2] See Table 4.
Table 4.
LO_SEL
LO_SEL (pin 7)
local oscillator frequency
(V)
0
(GHz)
9.75
VCC
open
10.60
10.60
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC(BG)
VCC(IF)
VCC(PLL)
VCC(XO)
Tj
Parameter
Conditions
Min
−0.5
−0.5
−0.5
−0.5
-
Max
+3.6
+3.6
+3.6
+3.6
125
Unit
V
band gap supply voltage
IF supply voltage
PLL supply voltage
XO supply voltage
junction temperature
storage temperature
V
V
V
°C
°C
Tstg
-
125
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol Parameter
Conditions
Min Typ Max Unit
Tamb
Z0
ambient temperature
−40 +25 +85 °C
characteristic impedance
-
50
-
Ω
Table 7.
Mode
Selection of crystal
Frequency Load
Frequency Quartz cut Maximum
Tank circuit
capacitor stability
drive level
(MHz)
fundamental 50
overtone 50
(pF)
0 [1]
0 [1]
(ppm)
± 50 [2]
± 50 [2]
(µW)
AT-cut
AT-cut
100
not used
used [3]
100
[1] Series resonant.
[2] The LO will have the same frequency stability.
[3] The components of the tank circuit are selected to form a parallel resonance at 50 MHz.
The input capacitance at XO_TANK (pin 5) is 3 pF.
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
5 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
The tank circuit should have no DC path between VCC(XO) (pin 4) and XO_TANK (pin 5), therefore the
inductive branch should contain a DC block.
11. Thermal characteristics
Table 8.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
24 K/W
Rth(j-sp)
thermal resistance from junction to solder point
12. Characteristics
Table 9.
Characteristics
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min Typ Max Unit
[1]
supply voltage
supply current
RF input and IF output AC coupled
RF input and IF output AC coupled
3.0 3.3 3.6
V
[1][2]
ICC
-
102 125 mA
ϕnλ(itg)
integrated phase
noise density
integration offset frequency = 10 kHz to 13 MHz;
loop bandwidth = crossover bandwidth
[2][3]
[2][4]
low band
-
-
-
-
-
2.5 °RMS
2.5 °RMS
high band
-
[2][3][5][6]
[2][4][5][6]
[2][3][6]
[2][4][6]
[2][3]
NFSSB
single sideband noise low band
9
9
10
10
dB
dB
dB
dB
dB
dB
figure
high band
Gconv
conversion gain
low band
26 32 35
26 32 35
high band
∆Gconv
conversion gain
variation
low band
-
-
-
-
-
-
-
-
5
5
[2][4]
high band
[6]
in every 36 MHz band; high band and low band
with optimum matching structure
1.5 dB
[6]
s11
input reflection
coefficient
−10 dB
[7]
s22
output reflection
coefficient
fIF_OUT = 950 MHz to 2150 MHz; Z0 = 75 Ω
-
-
−10 dB
IP3O
output third-order
intercept point
carrier power = −10 dBm (measured at output);
worst case is given.
[2][3][7][8]
[2][4][7][8]
low band
10
10
-
-
-
-
dBm
dBm
high band
αL(RF)lo
local oscillator RF
leakage
center frequency = local oscillator frequency;
span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz
[2][3][9]
[2][4][9]
low band
-
-
-
-
−35 dBm
−35 dBm
high band
αL(IF)lo
local oscillator IF
leakage
center frequency = local oscillator frequency;
span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz
[2][3][10]
[2][4][10]
[10]
low band
-
-
-
-
-
-
−15 dBm
−15 dBm
−60 dBm
high band
αresp(sp)IF_OUT spurious response on center frequency = 1.6 GHz;
pin IF_OUT span frequency = 1.2 GHz; RBW = 30 kHz;
VBW = 100 kHz
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
6 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
[1] DC values.
[2] See corresponding graph in Section 13.1.2 “Parameters as function of temperature”.
[3] Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz.
[4] High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz.
[5] Measured with band-pass filter according to Figure 4 and Figure 5.
[6] See corresponding graph in Section 13.1.1 “Parameters as function of frequency”.
[7] measured in 50 Ω environment and calculated back towards a 75 Ω environment.
[8] measured with carriers depicted in Table 10.
[9] measured with spectrum analyzer at RF_IN (pin 21); IF_OUT (pin 16) terminated with 50 Ω.
[10] measured with spectrum analyzer at IF_OUT (pin 16); RF_IN (pin 21) terminated with 50 Ω via DC block.
Table 10. IP3O carriers
Band RF frequency
Carrier #1
RF frequency
Carrier #2
IP3O
low frequency
IF frequency
Carrier#1
IF frequency
Carrier#2
IP3O
high frequency
(GHz)
(GHz)
10.78
11.66
11.78
12.71
(MHz)
950
(MHz)
990
(MHz)
1030
1910
1180
2110
(MHz)
1070
1950
1220
2150
Low
10.74
11.62
11.74
12.67
1830
1100
2030
1870
1140
2070
High
001aai390
001aai391
40
(dB)
0
(dB)
−1
s
s
12
21
s
s
11
22
0
−2
−3
−4
−5
−40
−80
s
s
12
21
−120
0
5
10
15
20
9
10
11
12
13
14
f (GHz)
f (GHz)
Fig 4. Filter SEI FSCM:67021
Fig 5. Filter SEI FSCM:67021
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
7 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13. Application information
L2
27 nH
IF_OUT
C11
100 pF
C5
100 nF
IF_GND IF_GND IF_OUT
IF_GND IF_GND VCC(IF)
15 14 13
18
17
16
RF1_GND
VCO_GND
19
12
C8
1 nF
RF1_GND
RF_IN
PLL_LF
C10
220 nF
20
21
22
23
24
11
10
9
C9
820 pF
R1
120 Ω
REG_V_VCO
RF_IN
TFF1004HN
RF2_GND
RF2_GND
V
V
CC(BG)
CC
3.3 V
C4
100 nF
C12
47 µF
BG_GND
LO_SEL
8
V
CC(MIX)
7
LO_SEL
C1
100 pF
1
2
3
4
5
6
PLL_GND V
XO_GND
V
XO_TANK XO_XTAL
CC(PLL)
CC(XO)
C2
100 pF
C3
100 nF
C6
18 pF
X1
50 MHz; series
ESR < 70 Ω
C7
4.7 nF
L1
470 nH
001aai392
For list of components see Table 11.
Fig 6. Application diagram of TFF1004HN/N1
Table 11. List of components
The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm.
For application diagram, see Figure 6.
Component Description
Value
Remarks
C1
C2
C3
C4
decoupling of RF and MIX domain
100 pF
100 pF
100 nF
100 nF
decoupling of PLL domain
decoupling of XO domain
decoupling of BG domain
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
8 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 11. List of components …continued
The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm.
For application diagram, see Figure 6.
Component Description
Value
100 nF
18 pF
Remarks
C5
C6
C7
C8
decoupling of IF domain
XO_TANK circuit (only with overtone crystal)
[1]
[1]
XO_TANK circuit, DC coupling (only with overtone crystal) 4.7 nF
REG_V_VCO decoupling
1 nF
maximum
value 1 nF
C9
loop filter
820 pF
220 nF
100 pF
47 µF
C10
C11
C12
L1
loop filter
output capacitor
main supply decoupling and 22 kHz rejection
XO_TANK circuit (only with overtone crystal)
RF choke at 2.15 GHz
loop filter
[1]
[1]
470 nH
27 nH
L2
R1
120 Ω
X1
crystal; series resonant; ESR < 70 Ω
50 MHz
[1] See Table 7.
UAF3000
3.3 V
REGULATOR
SUPPLY AND BAND/POLARIZATION SWITCHING
horizontal
polarization
1st STAGE LNA
image
reject
filter
LO_SEL
V
TFF1004HN/N1
CC
RF gain
IF gain
mixer
vertical
polarization
2nd STAGE LNA
1st STAGE LNA
PLL
9.75/10.6 GHz
001aai393
Fig 7. TFF1004HN/N1 in practice
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
9 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13.1 Graphs
13.1.1 Parameters as function of frequency
001aai394
001aai395
−60
−60
ϕ
ϕ
nλ
nλ
(dBc/Hz)
(dBc/Hz)
−80
−80
−100
−120
−140
−100
−120
−140
3
4
5
6
7
8
9
3
4
5
6
7
8
9
10
10
10
10
10
10
10
(Hz)
10
10
10
10
10
10
10
(Hz)
f
f
offset
offset
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 8. Phase noise density as function of
Fig 9. Phase noise density as function of
offset frequency (low band); typical values
offset frequency (high band); typical values
001aai396
001aai397
10
34
NF
G
conv
SSB
(dB)
(dB)
9
8
7
6
5
33
32
31
30
29
(1)
(2)
(1)
(2)
10
11
12
13
10
11
12
13
f (GHz)
f (GHz)
(1) low band
(2) high band
VCC = 3.3 V.
(1) low band
(2) high band
VCC = 3.3 V.
Fig 10. Noise figure as function of frequency;
typical values
Fig 11. Conversion gain as function of frequency;
typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
10 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
90°
1.0
+1
0.8
135°
45°
+0.5
+2
0.6
0.4
0.2
0
12.75 GHz
11.70 GHz
10.70 GHz
+0.2
+5
0
0.2
0.5
1
2
5
10
0°
180°
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aai398
−90°
Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω.
Fig 12. Input reflection coefficient (S11) without matching structure; typical values
90°
1.0
+1
0.8
135°
45°
+0.5
+2
0.6
0.4
0.2
0
+0.2
+5
950 MHz
2
0
0.2
0.5
1
5
10
0°
180°
2150 MHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
−90°
1.0
001aai399
Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω.
Fig 13. Output reflection coefficient (S22); typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
11 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13.1.2 Parameters as function of temperature
001aai400
160
I
CC
(mA)
120
80
40
0
−50
−20
10
40
70
T
100
(°C)
amb
VCC = 3.3 V.
Fig 14. Supply current as function of temperature; typical values
001aai401
001aai402
2.6
2.6
ϕ
ϕ
nλ(itg)
nλ(itg)
(° RMS)
(° RMS)
2.4
2.4
2.2
2.0
1.8
2.2
2.0
1.8
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 15. Integrated phase noise density as function of
temperature (low band); typical values
Fig 16. Integrated phase noise density as function of
temperature (high band); typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
12 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai403
001aai404
10
10
NF
NF
SSB
SSB
(dB)
(dB)
9
9
8
7
6
5
8
7
6
5
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1525 MHz.
Fig 17. Single sideband noise figure as function of
temperature (low band); typical values
Fig 18. Single sideband noise figure as function of
temperature (high band); typical values
001aai405
001aai406
35
35
G
G
conv
conv
(dB)
(dB)
34
34
33
32
31
30
33
32
31
30
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1385 MHz.
Fig 19. Conversion gain as function of temperature
(low band); typical values
Fig 20. Conversion gain as function of temperature
(high band); typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
13 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai407
001aai408
5
5
∆G
∆G
conv
conv
(dB)
(dB)
4
3
2
1
0
4
3
2
1
0
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 21. Conversion gain variation as function of
temperature (low band); typical values
Fig 22. Conversion gain variation as function of
temperature (high band); typical values
001aai409
001aai410
15
15
IP3
IP3
O
O
(dBm)
(dBm)
13
13
11
9
11
9
7
7
5
−50
5
−50
−20
10
40
70
T
100
(°C)
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 23. Output third-order intercept point as function
of temperature (low band); typical values
Fig 24. Output third-order intercept point as function
of temperature (high band); typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
14 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai411
001aai412
−40
−40
α
α
L(RF)lo
L(RF)lo
(dBm)
(dBm)
−42
−42
−44
−46
−48
−50
−44
−46
−48
−50
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 25. Local oscillator RF leakage as function of
temperature (low band); typical values
Fig 26. Local oscillator RF leakage as function of
temperature (high band); typical values
001aai413
001aai414
−15
−15
α
α
L(IF)lo
L(IF)lo
(dBm)
(dBm)
−17
−17
−19
−21
−23
−25
−19
−21
−23
−25
−50
−20
10
40
70
T
100
(°C)
−50
−20
10
40
70
T
100
(°C)
amb
amb
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 27. Local oscillator IF leakage as function of
temperature (low band); typical values
Fig 28. Local oscillator IF leakage as function of
temperature (high band); typical values
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
15 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
14. Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 x 4 x 0.85 mm
SOT616-1
B
A
D
terminal 1
index area
A
A
1
E
c
detail X
e
1
C
1/2 e
y
y
C
1
e
v
M
M
C
C
A
B
b
7
12
w
L
13
6
e
e
E
h
2
1/2 e
1
18
terminal 1
index area
24
19
X
D
h
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
(1)
(1)
UNIT
mm
A
b
c
E
e
e
e
y
D
D
E
L
v
w
y
1
1
h
1
2
h
max.
0.05 0.30
0.00 0.18
4.1
3.9
2.25
1.95
4.1
3.9
2.25
1.95
0.5
0.3
0.05
0.1
1
0.2
0.5
2.5
2.5
0.1 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-08-08
02-10-22
SOT616-1
- - -
MO-220
- - -
Fig 29. Package outline SOT616-1
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
16 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
15. Abbreviations
Table 12. Abbreviations
Acronym
BG
Description
Band Gap
DVB-S
ESR
IC
Digital Video Broadcasting by Satellite
Equivalent Series Resistance
Integrated Circuit
IF
Intermediate Frequency
K-under band
Ku band
LO
Local Oscillator
PFD
PLL
Phase Frequency Detector
Phase-Locked Loop
RBW
RF
Resolution BandWidth
Radio Frequency
VBW
VCO
XO
Video BandWidth
Voltage-Controlled Oscillator
Crystal Oscillator
16. Revision history
Table 13. Revision history
Document ID
Release date
20080825
Data sheet status
Change notice
Supersedes
TFF1004HN_N1_1
Product data sheet
-
-
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
17 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
17.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
TFF1004HN_N1_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2008
18 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
19. Contents
1
2
3
4
5
6
7
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
8
8.1
8.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
10
11
12
13
13.1
13.1.1
13.1.2
Application information. . . . . . . . . . . . . . . . . . . 8
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Parameters as function of frequency . . . . . . . 10
Parameters as function of temperature. . . . . . 12
14
15
16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
17.1
17.2
17.3
17.4
18
19
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2008
Document identifier: TFF1004HN_N1_1
相关型号：
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