UAA2077CM [NXP]
2 GHz image rejecting front-end; 2 GHz的图像拒绝前端
| 型号： | UAA2077CM |
| 厂家： | 
NXP |
| 描述： | 2 GHz image rejecting front-end |
| 文件： | 总20页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA2077CM
2 GHz image rejecting front-end
1997 Sep 24
Product specification
Supersedes data of 1996 Oct 02
File under Integrated Circuits, IC17
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.
FEATURES
• Low-noise, wide dynamic range amplifier
• Very low noise figure
• Dual balanced mixer for over 30 dB on-chip image
rejection
Signals presented at the RF input at LO + IF frequency are
rejected through this signal processing while signals at
LO − IF frequency can form the IF signal.
• IF I/Q combiner at 188 MHz
• On-chip quadrature network
The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.
• Down-conversion mixer for closed-loop transmitters
• Independent TX/RX fast ON/OFF power-down modes
• Very small outline packaging
• Very small application (no image filter).
The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
being fed to the receive mixers.
APPLICATIONS
• High frequency front-end for DCS1800/PCS1900
hand-portable equipment
The transmit section consists of a low-noise amplifier, and
a down-conversion mixer. In the transmit mode, an internal
LO buffer is used to drive the transmit IF down-conversion
mixer.
• Compact digital mobile communication equipment
• TDMA receivers e.g. RF-LANS.
GENERAL DESCRIPTION
All RF and IF inputs or outputs are balanced.
UAA2077CM contains both a receiver front-end and a high
frequency transmit mixer intended to be used in mobile
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.
Pins RXON, TXON and SXON allow to control the different
power-down modes. A synthesizer-on (SX) mode enables
LO buffers independent of the other circuits. When
pin SXON is HIGH, all internal buffers on the LO path of
the circuit are turned on, thus minimizing LO pulling when
remainder of the receive or transmit chain is powered up.
Special care has been taken for fast power-up switching.
The main advantage of the UAA2077CM is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
MIN.
3.6
TYP.
3.75
MAX.
5.3
UNIT
supply voltage
V
ICC(RX)
ICC(TX)
ICC(PD)
Tamb
receive supply current
27.5
11
36
14
−
44.5
17.5
50
mA
mA
µA
°C
transmit supply current
supply current in power-down
operating ambient temperature
−
−30
+25
+75
1997 Sep 24
2
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
UAA2077CM
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
BLOCK DIAGRAM
n.c.
n.c.
TXON
11
RXON
12
SXON
9
SBS
10
4
7
o
+45
UAA2077CM
MIXER
3
V
CCLNA
17
IFA
5
6
RFINA
RFINB
IF
COMBINER
LNA
o
+135
18
IFB
low-noise
amplifier
8
LNAGND
RECEIVE SECTION
TRANSMIT SECTION
15
16
V
CCLO
QUADRATURE
PHASE
SHIFTER
LOGND
MIXER
19
TXOA
TXOB
20
LOCAL OSCILLATOR
SECTION
14
13
2
1
MGD285
LOINA LOINB
TXINB TXINA
Fig.1 Block diagram.
1997 Sep 24
3
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
PINNING
SYMBOL
PIN
DESCRIPTION
TXINA
TXINB
VCCLNA
1
2
3
transmit mixer input A (balanced)
transmit mixer input B (balanced)
supply voltage for LNA, IF parts
and TX mixer
n.c.
4
5
6
7
8
not connected
handbook, halfpage
RFINA
RFINB
n.c.
RF input A (balanced)
RF input B (balanced)
not connected
TXINA
TXINB
1
2
3
4
5
6
7
8
9
20 TXOB
19 TXOA
18 IFB
V
CCLNA
n.c.
LNAGND
ground for LNA, IF parts and TX
mixer
17 IFA
RFINA
RFINB
n.c.
16 LOGND
SXON
SBS
9
SX mode enable (see Table 1)
UAA2077CM
10 sideband selection (should be
grounded for fLO < fRF
15
V
CCLO
)
14 LOINA
13 LOINB
12 RXON
11 TXON
TXON
RXON
LOINB
LOINA
VCCLO
LOGND
IFA
11 TX mode enable (see Table 1)
12 RX mode enable (see Table 1)
13 LO input B (balanced)
14 LO input A (balanced)
15 supply voltage for LO parts
16 ground for LO parts
LNAGND
SXON
SBS 10
MGD286
17 IF output A (balanced)
18 IF output B (balanced)
IFB
TXOA
19 transmit mixer IF output A
(balanced)
TXOB
20 transmit mixer IF output B
(balanced)
Fig.2 Pin configuration.
1997 Sep 24
4
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.
FUNCTIONAL DESCRIPTION
Receive section
The IF output is differential and of the open-collector type.
Typical application will load the output with a 680 Ω
resistor load at each IF output, plus a differential 1 kΩ load
made of the input impedance of the IF filter or the input
impedance of the matching network for the IF filter.
The power gain refers to the available power on this 1 kΩ
load. The path to VCC for the DC current should be
achieved via tuning inductors. The output voltage is limited
to VCC + 3Vbe or 3 diode forward voltage drops.
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.
Fast switching, ON/OFF, of the receive section is
controlled by the hardware input RXON.
Pin SBS allows sideband selection:
• fLO > fRF (SBS = 1)
• fLO < fRF (SBS = 0).
Where fRF is the frequency of the wanted signal.
SBS
IF
o
+45
amplifier
MIXER
MIXER
V
CCLNA
IFA
RFINA
RFINB
IF
COMBINER
IFB
LNA
LNAGND
IF
o
amplifier
+135
MGD754
RXON
LOIN
Fig.3 Block diagram, receive section.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
down-converted to a modulated transmit IF frequency,
phase locked with the baseband modulation.
Local oscillator section
The Local Oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.
The IF outputs are HIGH impedance (open-collector
type).Typical application will load the output with a 560 Ω
resistor load, connected to VCC for DC path, at each TX
output, plus a differential 1 kΩ made of the input
impedance of the matching network for the following TX
part. The mixer can also be used for frequency
up-conversion.
A synthesizer-ON mode (SX mode) is used to power-up all
LO input buffers, thus minimizing the pulling effect on the
external VCO when entering receive or transmit mode.
This mode is active when SXON = 1.
Fast switching, ON/OFF, of the transmit section is
controlled by the hardware input TXON.
Transmit mixer
This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF which is
to RX
handbook, halfpage
V
handbook, halfpage
TX MIXER
CCLO
TXOA
TXOB
LOIN
QUAD
MGD153
LOGND
to TX
TXON
TXINB TXINA
MGD287
SXON LOINA LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
Table 1 Control of power status
EXTERNAL PIN LEVEL
CIRCUIT MODE OF OPERATION
TXON
RXON
SXON
LOW
LOW
HIGH
LOW
LOW
HIGH
HIGH
LOW
HIGH
LOW
LOW
HIGH
LOW
HIGH
LOW
LOW
LOW
HIGH
HIGH
HIGH
X
power-down mode
RX mode: receive section and LO buffers to RX on
TX mode: transmit section and LO buffers to TX on
SX mode: complete LO section on
SRX mode: receive section on and SX mode active
STX mode: transmit section on and SX mode active
receive section and transmit section on; specification not guaranteed
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
MIN.
MAX.
UNIT
supply voltage
−
−
9
V
V
∆GND
difference in ground supply voltage applied between LOGND and
LNAGND
0.6
Pi(max)
Tj(max)
Pdis(max)
Tstg
maximum power input
−
−
−
+20
dBm
°C
maximum operating junction temperature
maximum power dissipation in quiet air
storage temperature
+150
250
mW
°C
−65
+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
120
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
K/W
HANDLING
All pins withstand 1500 V ESD test in accordance with “MIL-STD-883C class 1 (method 3015.5)”.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
DC CHARACTERISTICS
V
CC = 3.75 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
Pins: VCCLNA and VCCLO
CONDITIONS
MIN.
TYP. MAX. UNIT
VCC
supply voltage
over full temperature range
3.6
3.75
36
5.3
V
ICC(RX)
ICC(TX)
ICC(PD)
ICC(SX)
ICC(SRX)
ICC(STX)
supply current in RX mode
supply current in TX mode
supply current in power-down mode
supply current in SX mode
supply current in SRX mode
supply current in STX mode
27.5
11
44.5
17.5
50
mA
mA
µA
mA
mA
mA
14
−
−
6.5
29.5
15
8.5
38.5
19.5
10.5
47.5
24
Pins: RXON, TXON, SXON and SBS
Vth
VIH
VIL
IIH
CMOS threshold voltage
HIGH level input voltage
LOW level input voltage
note 1
−
1.25
−
V
0.7VCC
−0.3
−1
−
−
−
−
VCC
+0.8
+1
V
V
HIGH level static input current
LOW level static input current
pins at VCC − 0.4 V
µA
µA
IIL
pins at 0.4 V
−1
+1
Pins: RFINA and RFINB
VI
DC input voltage level
receive section on
1.8
2.3
1.9
0.8
2.6
2.0
3.0
2.15
1.0
2.9
2.2
3.8
2.4
1.2
3.2
V
Pins: IFA and IFB
IO
DC output current
receive section on
mA
V
Pins: TXINA and TXINB
VI
DC input voltage level
transmit section on
Pins: TXOA and TXOB
IO
DC output current
transmit section on
mA
V
Pins: LOINA and LOINB
VLOIN
DC input voltage level
RXON, TXON or SXON HIGH
Note
1. The referenced inputs should be connected to a valid CMOS input level.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
AC CHARACTERISTICS
V
CC = 3.75 V; Tamb = −30 to +75 °C; foRX = 188 MHz; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS
Receive section (receive section enabled)
MIN.
TYP. MAX.
UNIT
RiRX
RF input resistance (real part of balanced; at 1960 MHz
the parallel input impedance)
−
−
60
−
−
Ω
CiRX
RF input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1960 MHz
0.8
pF
fiRX
RF input frequency
1805
15
−
1990
−
MHz
dB
RLiRX
GCPRX
return loss on matched RF input balanced; note 1
20
22
conversion power gain
differential RF inputs to differential 19
25
dB
IF outputs loaded to 1 kΩ
differential
Grip
gain ripple as a function of RF
frequency
within 100 MHz bandwidth; note 2
note 2
−
0.2
0.5
dB
∆G/T
gain variation with temperature
1 dB compression point
−10
−15
−20
mdB/K
dB
CP1RX
differential RF inputs to differential −25.5 −24
−
IF outputs; note 1
DES
desensitisation
interferer frequency offset: 3 MHz;
Pin = −26 dBm; interferer
frequency offset: 20 MHz,
Pin = −23 dBm differential RF
inputs to differential IF outputs;
note 1
−
−
5
dB
IP2DRX
half IF spurious attenuation for
−52 dBm input power
(fRF = fLO + 0.5 × fIF)
differential RF inputs to differential 37
IF outputs; note 2
−
−
−
dB
IP3RX
NFRX
3rd order intercept point
differential RF inputs to differential −21.5 −17
IF outputs; note 2
dBm
overall noise figure
differential RF inputs to differential
IF outputs
T
amb = 25 °C; DCS frequency
range; note 3
amb = 25 °C; PCS frequency
range; notes 2 and 3
amb = −30 to +65 °C; PCS
frequency range; notes 2 and 3
−
−
−
−
3.8
4.0
−
−
dB
dB
dB
Ω
T
4.4
5.0
−
T
ZLRX
typical application IF output load balanced
impedance
1000
RLoRX
foRX
IR
return loss on matched IF output balanced; note 1
IF frequency range
15
−
20
−
−
−
dB
188
38
MHz
dB
rejection of image frequency
fRF > fLO; fRF is the frequency of
the wanted signal
30
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
Local oscillator section (receive section enabled)
fiLO
LO input frequency
1617
−
1802
MHz
RiLO
LO input resistance (real part of balanced; at 1770 MHz
the parallel input impedance)
−
90
−
Ω
CiLO
LO input inductance (imaginary balanced; at 1770 MHz
part of the parallel input
−
5
−
nH
impedance)
RLiLO
return loss on matched input
(including standby mode)
note 1
10
15
20
−
−
dB
∆RLiLO
return loss variation between
SX, SRX and STX modes
linear S11 variation; note 1
−
mU
PiLO
RILO
LO input power level
reverse isolation
−10
−6
0
dBm
dB
LOIN to RFIN at LO frequency;
note 2
40
−
−
Transmit section (transmit section enabled)
ZLTX
TX IF typical load impedance
balanced
note 1
−
500
15
−
−
Ω
RLoTX
return loss on matched
transmitter IF output
11
dB
RiTX
TX RF input resistance
(real part of the parallel input
impedance)
balanced; at 1880 MHz
balanced; at 1880 MHz
−
−
60
1
−
−
Ω
CiTX
TX RF input capacitance
(imaginary part of the parallel
input impedance)
pF
fiTX
TX mixer input frequency
1600
10
−
2000
−
MHz
dB
RLiTX
GCPTX
return loss on matched TX input note 1
15
9
conversion power gain
differential transmitter inputs to
6
12
dB
differential transmitter IF outputs
loaded with 500 Ω differential
foTX
TX output frequency
1 dB input compression point
2nd order intercept point
3rd order intercept point
noise figure
50
−25
−
−
400
−
MHz
dBm
dBm
dBm
dB
CP1TX
IP2TX
IP3TX
NFTX
ITX
note 1
−22
+22
−16
5
note 2
−
note 2
−20
−
−
double sideband; notes 2 and 3
LOIN to TXIN; note 2
TXIN to LOIN; note 2
9
isolation
40
38
−
−
dB
RITX
reverse isolation
−
−
dB
Timing
tstu
start-up time of each block
1
5
20
µs
Notes
1. Measured and guaranteed only on UAA2077CM PCS demonstration board at Tamb = 25 °C.
2. Measured and guaranteed only on UAA2077CM PCS demonstration board.
3. This value includes printed-circuit board and balun losses.
1997 Sep 24
10
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
INTERNAL PIN CONFIGURATION
DC
PIN
SYMBOL
VOLTAGE
(V)
EQUIVALENT CIRCUIT
1
TXINA
2.15
2.15
2.0
V
CC
2
5
6
TXINB
RFINA
RFINB
1, 5
2, 6
2.0
GND
MGL205
3
8
9
VCCLNA
LNAGND
SXON
3.75
0
V
CC
10
11
12
13
SBS
9, 10, 11, 12
TXON
RXON
LOINB
GND
MGL204
2.9
2.9
V
CC
13
14
14
LOINA
GND
MGL206
15
16
VCCLO
3.75
0
LOGND
1997 Sep 24
11
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
DC
PIN
SYMBOL
VOLTAGE
(V)
EQUIVALENT CIRCUIT
17
IFA
V
CC
17
18
18
IFB
GND
GND
MGL207
19
20
TXOA
TXOB
V
CC
20
19
GND
MGL208
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
APPLICATION INFORMATION
GM2D8
d b o o k g e w i d t h
1997 Sep 24
13
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.25
0.65
1.0
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1997 Sep 24
14
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
17
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
18
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
19
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
437027/1200/02/pp20
Date of release: 1997 Sep 24
Document order number: 9397 750 02731
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