UAA3587 [NXP]
Complete, single-package GSM/GPRS/EDGE RF transceiver; 完整的单封装的GSM / GPRS / EDGE RF收发器
| 型号： | UAA3587 |
| 厂家： | 
NXP |
| 描述： | Complete, single-package GSM/GPRS/EDGE RF transceiver |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UAA3587 RF SiP
Complete, single-package
GSM/GPRS/EDGE RF transceiver
Integrating passive and active components into a single
package, this complete RF transceiver improves performance
while eliminating 35 external components and enabling an
2
RF front-end of less than 2.5 cm .
S e m i c o n d u c t o r s
The UAA3587, the first Philips System-in-Package (SiP) solution to use a
new silicon-based structure, is a complete RF transceiver for GSM, GPRS,
and EDGE mobile phones. It uses innovative techniques to combine passive
and active components in a single package, maximizing RF performance
while significantly reducing external component count and overall design size.
The SiP uses 35 fewer external RF components than the previous genera-
2
tion and enables a design area of less than 2.5 cm for the complete radio
sub-system. Combined with the miniaturization of other components, the
SiP offers increased RF performance while saving 30% more space than the
previous “best-in-class” solution and 50% more than the industry average.
By replacing dozens of active and passive components in a single, drop-in
solution, the SiP dramatically cuts assembly costs and time-to-market. By
bringing the passive component networks closer together, the SiP shortens
interconnect lengths and reduces parasitics, thereby improving overall RF
performance.
Key features
• Advanced, single-package RF transceiver for GSM/GPRS/EDGE
Designed for efficiency, flexibility
- 30% smaller than previous best-in-class solutions
The receiver uses a Near Zero-IF (NZIF) architecture.The transmitter uses
a direct-conversion upmixer architecture that delivers -163 dBm/Hz at 20 MHz,
a carrier rejection of greater than 35 dB, and a transmit attenuation range of
40 dB. The RF antenna switches can be controlled by up to three outputs
and the transceiver as a whole can support any combination of 3 out of
4 GSM/GPRS/EDGE bands (850 / 900 / 1800 / 1900 MHz).
2
- Total RF front-end < 2.5 cm
• Eliminates 35 external components
- Integrated Tx baluns, loop filters, decoupling capacitors
- Integrated Fractional-N RF synthesizer with AFC control
- Semi-integrated 26-MHz oscillator with integrated supply regulator
• Superior performance from optimal process technologies
- 0.25µm QUBiC4 BiCMOS for RF performance
- Passive integration for lower component count
- Flip-chip assembly shortens interconnects, reduces parasitics
• Efficient, flexible architectures
The SiP includes integrated Tx baluns, loop filters, and decoupling capaci-
tors.There is an integrated Fractional-N RF synthesizer with AFC control,
as well as a semi-integrated, 26-MHz oscillator clock with integrated supply
regulator.
- NZIF receiver architecture
- Direct conversion upmixer transmit architecture
- Triple-output control of RF antenna switches
- Any combination of 3 out of 4 bands (850 / 900 / 1800 / 1900 MHz)
• HVQFN40 package (6 x 6 x 0.85 mm)
UAA3587 RF SiP
Complete, single-package GSM/GPRS/EDGE RF transceiver
w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m
GNDL
V
GNDRF
V
V
V
V
V
V
Innovative silicon-based structure
DDL
CCRF
CCIF
CCRFLO
CCCP
CCSYN
CCSYN
Each portion of the SiP is fabricated in the process technology ideally suited
to its function, so each individual die delivers the ultimate balance of per-
formance, size, and cost.
V
V
V
V
V
DDL
CCRF
CCIF
CCRFLO
CCCP
LBIA
LBIB
IA
IB
SWBIA
SWBIB
To combine high-performance passive components with active transistors,
the UAA3587 uses the QUBiC4 BiCMOS process (0.25µm, 40/90 GHz
FT/FMAX). Less critical passive components, or components that require sig-
nificant silicon area, are fabricated in Philips-proprietary Passive Integration
Technologies, which only involve back-end (and hence lower-cost) silicon
wafer processing.
QUAD
QA
QB
HBIA
HBIB
V
VREG
CCRFLO
DIV
GNDREF
V
VREG
CCSYN
FRACN
DIV
RFTUNE
REFVCC
CLKFDBX
Using flip-chip techniques, the active die is direct-bonded to the passive
component die, thereby eliminating the need for any mechanical or inter-
connect substrate.The whole assembly is then housed in a standard 40-pin
REFIN
PFD
V
CCCP
DIV
1/2
EXTRES
LBO
CLKOUT
DIV
QUAD
2
HVQFN package that measures only 36 mm .
PGMDIV
SWON
BALUN
BALUN
FESW1
FESW2
FESW3
Part of the Nexperia Cellular System Solution
The UAA3587 is in mass production and has already been designed into
Nexperia Cellular System Solutions, the Philips family of hardware and soft-
ware reference designs for multimedia mobile phones.The SiP provides
complete RF transceiver functionality in the 61x0 System Solution, a design
optimized for the feature phone market.
FRONT
END
SWITCHES
HBO
TXVCC
3WB
UAA3587E
POWER EN
CTRL
V
DDL
bra230
UAA3587 RF SiP block diagram
Philips Semiconductors
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in more than 50 countries. For a complete up-to-date list of our sales offices
please e-mail sales.addresses@www.semiconductors.philips.com
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You can also visit our website http://www.semiconductors.philips.com/sales
© Koninklijke Philips Electronics N.V. 2004
SCS 78
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not form
part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial
or intellectual property rights.
date of release: September 2004
document order number: 9397 750 14047
Published in the Netherlands
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