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EE-SJ3-C [OMRON]

Photomicrosensor (Transmissive); 微型光电（透射）
EE-SJ3-C
型号： EE-SJ3-C
厂家： OMRON ELECTRONICS LLC    OMRON ELECTRONICS LLC
描述：

Photomicrosensor (Transmissive)
微型光电（透射）

光电 开关 插槽式开关 输出元件
文件： 总3页 (文件大小：365K)
中文：  中文翻译
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Photomicrosensor  
EE-SJ3 Series  
(Transmissive)  
Dimensions  
Features  
Note: All units are in millimeters unless otherwise indicated.  
• High-resolution model with a 0.2-mm-wide sensing  
aperture, high-sensitivity model with a 1-mm-wide sensing  
aperture, and model with a horizontal sensing aperture  
are available.  
Center mark  
0.3  
6.2  
• All models have a 3 mm wide slot.  
Absolute Maximum Ratings  
(Ta = 25°C)  
0.2  
Item  
Symbol  
Rated value  
Emitter  
Forward current  
I
I
50 mA  
F
(see note 1)  
10.2  
7.2±0.2  
Pulse forward  
current  
1 A  
(see note 2)  
FP  
Reverse voltage  
V
V
4 V  
R
6
Four, 0.5  
Four, 0.25  
Detector  
Collector--Emitter  
voltage  
30 V  
CEO  
7.6±0.3  
Cross section BB  
2.54±0.2  
Cross section AA  
Emitter--Collector  
voltage  
V
ECO  
---  
Collector current  
I
20 mA  
C
Collector  
dissipation  
P
C
100 mW  
(see note 1)  
Model  
Aperture (a x b)  
2.1 x 1.0  
Ambient  
Operating  
Storage  
Topr  
Tstg  
Tsol  
-- 2 5 °C to 85°C  
-- 3 0 °C to 100°C  
temperature  
EE-SJ3-C  
EE-SJ3-D  
EE-SJ3-G  
2.1 x 0.2  
0.5 x 2.1  
Soldering temperature  
260°C  
(see note 3)  
Internal Circuit  
K
A
C
E
Note: 1. Refer to the temperature rating chart if the ambient  
temperature exceeds 25°C.  
Unless otherwise specified, the  
tolerances are as shown below.  
2. The pulse width is 10 µs maximum with a frequency  
of 100 Hz.  
Dimensions  
3 mm max.  
Tolerance  
±0.3  
3. Complete soldering within 10 seconds.  
Terminal No.  
Name  
Anode  
Cathode  
Collector  
Emitter  
3 < mm ≤ 6  
6 < mm ≤ 10  
10 < mm ≤ 18  
18 < mm ≤ 30  
±0.375  
±0.45  
A
K
C
E
±0.55  
±0.65  
Ordering Information  
Description  
Part number  
EE-SJ3-C  
Photomicrosensor (Transmissive)  
EE-SJ3-D  
EE-SJ3-G  
Electrical and Optical Characteristics (Ta = 25°C)  
Item  
Symbol  
Value  
Condition  
I = 30 mA  
F
EE-SJ3-C  
EE-SJ3-D  
EE-SJ3-G  
Emitter  
Forward voltage  
Reverse current  
V
1.2 V typ., 1.5 V max.  
0.01 µA typ., 10 µA max.  
940 nm typ.  
F
I
R
V = 4 V  
R
Peak emission  
wavelength  
λ
I
= 20 mA  
P
F
Detector  
Light current  
Dark current  
I
I
I
1 to 28 mA typ.  
2 nA typ., 200 nA max.  
---  
0.1 mA min.  
0.5 to 14 mA  
I
= 20 mA, V = 10 V  
CE  
L
F
V
= 10 V, 0 ℓx  
D
CE  
Leakage current  
---  
LEAK  
Collector--Emitter  
saturated voltage  
V
CE  
(sat)  
0.1 V typ.,  
0.4 V max.  
---  
0.1 V typ.,  
0.4 V max.  
I
I
= 20 mA,  
= 0.1 mA  
F
L
Peak spectral sensitivity  
wavelength  
λ
850 nm typ.  
V
CE  
= 10 V  
P
V
= 5 V,  
Rising time  
Falling time  
tr  
tf  
4 µs typ.  
4 µs typ.  
CC  
L
R
= 100 Ω,  
I
= 5 mA  
L
EE-SJ3 Series  
EE-SJ3 Series  
Engineering Data  
Forward Current vs. Collector  
Dissipation Temperature Rating  
Forward Current vs. Forward  
Voltage Characteristics (Typical)  
Light Current vs. Forward Current  
Characteristics (Typical)  
Ta = 25°C  
CE  
V
= 10 V  
I
F
Ta = --30°C  
Ta = 25°C  
Pc  
Ta = 70°C  
Ambient temperature Ta (°C)  
Forward voltage V (V)  
Forward current I (mA)  
F
F
Light Current vs. Collector--Emitter  
Voltage Characteristics (EE-SJ3-G)  
Relative Light Current vs. Ambi-  
ent Temperature Characteristics  
(Typical)  
Dark Current vs. Ambient  
Temperature Characteristics  
(Typical)  
V
CE  
0 l x  
= 10 V  
Ta = 25°C  
I
= 20 mA  
F
V
= 5 V  
CE  
I
I
= 50 mA  
= 40 mA  
F
F
I
I
= 30 mA  
= 20 mA  
F
F
I
= 10 mA  
F
Ambient temperature Ta (°C)  
Collector--Emitter voltage V (V)  
CE  
Ambient temperature Ta (°C)  
Response Time vs. Load Resis-  
tance Characteristics (Typical)  
Sensing Position Characteristics  
(EE-SJ3-D)  
Sensing Position Characteristics  
(EE-SJ3-G)  
Vcc = 5 V  
I
= 20 mA  
CE  
I = 20 mA  
F
CE  
Ta = 25°C  
F
Ta = 25°C  
V
= 10 V  
V
= 10 V  
Ta = 25°C  
Center of optical axis  
--  
0
d
+
Center of optical axis  
Load resistance R (kΩ)  
Distance d (mm)  
Distance d (mm)  
L
Sensing Position Characteristics  
(EE-SJ3-C)  
Response Time Measurement  
Circuit  
I
= 20 mA  
= 10 V  
F
V
Input  
CE  
Ta = 25°C  
Center of optical axis  
90 %  
10 %  
Output  
Input  
Output  
Distance d (mm)  
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.  
R
OMRON ON–LINE  
OMRON ELECTRONICS LLC  
One East Commerce Drive  
Schaumburg, IL 60173  
OMRON CANADA, INC.  
885 Milner Avenue  
Toronto, Ontario M1B 5V8  
416-286-6465  
Global – http://www.omron.com  
USA – http://www.omron.com/oei  
Canada – http://www.omron.com/oci  
847–882–2288  
Cat. No. GC NAPMS–1  
02/03  
Specifications subject to change without notice.  
Printed in U.S.A.  

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