1N5822 [ONSEMI]
Axial Lead Rectifiers; 轴向引线整流器
| 型号： | 1N5822 |
| 厂家： | 
ONSEMI |
| 描述： | Axial Lead Rectifiers |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
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Features
SCHOTTKY BARRIER
RECTIFIERS
• Extremely Low V
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
• Shipped in plastic bags, 500 per bag
F
3.0 AMPERES
20, 30, 40 VOLTS
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
• These devices are manufactured with a Pb−Free external lead
finish only*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16 in from case
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
• Polarity: Cathode indicated by Polarity Band
MARKING DIAGRAM
1N
582x
1N582x = Device Code
x
= 0, 1 or 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
December, 2004 − Rev. 6
1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Symbol
1N5820 1N5821 1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
20
30
40
V
RRM
RWM
R
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
V
24
14
36
21
48
28
V
V
A
RSM
V
R(RMS)
Average Rectified Forward Current (Note 1)
I
O
3.
0
V
v 0.2 V , T = 95°C
R(dc) L
R(equiv)
(R
= 28°C/W, P.C. Board Mounting, see Note 5)
q
JA
Ambient Temperature
Rated V , P
T
A
90
85
80
°C
= 0
R(dc) F(AV)
R
= 28°C/W
q
JA
Non−Repetitive Peak Surge Current
I
80 (for one cycle)
A
FSM
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T = 75°C)
L
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T , T
65 to +125
15
°C
°C
J
stg
Peak Operating Junction Temperature (Forward Current applied)
T
J(pk)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*THERMAL CHARACTERISTICS (Note 5)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
Max
Unit
R
28
°C/W
q
JA
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1)
L
Characteristic
Symbol
1N5820 1N5821 1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
V
F
V
(i = 1.0 Amp)
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
F
(i = 3.0 Amp)
F
(i = 9.4 Amp)
F
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
i
R
mA
T = 25°C
T = 100°C
L
2.0
20
2.0
20
2.0
20
L
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.
ORDERING INFORMATION
†
Device
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
1N5820
500 Units/Bag
1500/Tape & Reel
500 Units/Bag
1N5820RL
1N5821
1N5821RL
1500/Tape & Reel
500 Units/Bag
1N5822
1N5822RL
1500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
1N5820, 1N5821, 1N5822
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V . Proper derating may be
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
RWM
accomplished by use of equation (1).
V
R(equiv)
= V
ꢀ
F
(4)
(FM)
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
T
where T
T
= T
* R
P
*
R
P
(1)
A(max)
A(max)
J(max)
J(max)
qJA F(AV)
qJA R(AV)
= Maximum allowable ambient temperature
= Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
= Average forward power dissipation
= Average reverse power dissipation
= Junction−to−ambient thermal resistance
EXAMPLE: Find T
for 1N5821 operated in a
A(max)
12−volt dc supply using a bridge circuit with capacitive filter
such that I = 2.0 A (I = 1.0 A), I /I = 10, Input
P
P
F(AV)
DC
F(AV)
(FM) (AV)
R(AV)
Voltage = 10 V
, R
(rms) qJA
= 40°C/W.
R
qJA
Step 1. Find V
Read F = 0.65 from Table 1,
R(equiv).
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
N
V
= (1.41) (10) (0.65) = 9.2 V.
R(equiv)
Step 2. Find T from Figure 2. Read T = 108°C
R
R
@ V = 9.2 V and R
= 40°C/W.
R
qJA
T = T
R
* R
P
(2)
J(max)
qJA R(AV)
Step 3. Find P
from Figure 6. **Read P
= 0.85 W
F(AV)
F(AV)
I
I
(FM)
Substituting equation (2) into equation (1) yields:
= T * R
@
+ 10 and I
F(AV)
+
1
.
0
A
.
(AV)
T
P
qJA F(AV)
(3)
A(max)
R
Step 4. Find T
T
from equation (3).
= 108 * (0.85) (40) = 74°C.
A(max)
A(max)
Inspection of equations (2) and (3) reveals that T is the
ambient temperature at which thermal runaway occurs or
R
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
where T = 125°C, when forward power is zero. The
J
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
MBR−prefix devices, using P
from Figure 6.
F(AV)
Table 1. Values for Factor F
Full Wave,
Circuit
Half Wave
Full Wave, Bridge
Resistive Capacitive
0.5 0.65
0.75
Center Tapped*†
Load
Resistive
Capacitive*
Resistive
1.0
1.5
Capacitive
1.3
1.5
Sine Wave
Square Wave
0.5
1.3
1.5
0.75
0.75
*Note that V
[
2
.
0
V
.
R(PK)
in(PK)
†Use line to center tap voltage for V
in.
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3
1N5820, 1N5821, 1N5822
125
115
105
95
125
20
15
20
10
15
10
8.0
115
8.0
105
R
q
(°C/W) = 70
R
q
(°C/W) = 70
JA
JA
50
50
95
40
40
10
28
28
85
75
85
75
2.0
3.0
4.0
5.0
7.0
10
15
20
3.0
4.0
5.0
7.0
15
20
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
40
35
30
25
20
125
115
105
95
20
15
10
MAXIMUM
TYPICAL
8.0
R
q
(°C/W) = 70
JA
15
10
5.0
0
50
40
85
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
28
75
4.0 5.0
7.0
10
15
20
30
40
0
1/8
2/8
3/8
4/8
5/8
6/8
7/8
1.0
V , REVERSE VOLTAGE (VOLTS)
R
L, LEAD LENGTH (INCHES)
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. Steady−State Thermal Resistance
1.0
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady−state conditions are achieved. Using the measured val-
LEAD LENGTH = 1/4″
0.5
0.3
0.2
P
P
pk
pk
DUTY CYCLE = t /t
p 1
PEAK POWER, P , is peak of an
t
p
pk
equivalent square power pulse.
ue of T , the junction temperature may be determined by:
L
0.1
TIME
T = T + DT
JL
J
L
t
1
DT = P • R [D + (1 − D) • r(t + t ) + r(t ) − r(t )] where:
0.05
q
JL
pk
JL
1
p
DT = the increase in junction temperature above the lead temperature.
p
1
JL
0.03
0.02
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t + t ) = normalized value of transient thermal resistance at time
t + t , etc.
1
p
1
p
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k 20 k
Figure 5. Thermal Response
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4
1N5820, 1N5821, 1N5822
10
7.0
5.0
NOTE 4 − APPROXIMATE THERMAL CIRCUIT MODEL
SINE WAVE
I
R
q
R
q
R
q
R
q
J(K)
R
qL(K)
R
qS(K)
S(A)
L(A)
J(A)
(FM)
3.0
2.0
+ pꢀ(ResistiveꢀLoad)
T
A(A)
T
A(K)
I
P
D
dc
(AV)
T
T
T
T
T
L(K)
L(A)
C(A)
J
C(K)
5.0
10
20
1.0
0.7
0.5
SQUARE WAVE
Capacitive
Loads
NJ
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
0.3
0.2
T ≈ 125°C
J
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
, AVERAGE FORWARD CURRENT (AMP)
T = Ambient Temperature
A
T = Case Temperature
C
F(AV)
T = Lead Temperature
T = Junction Temperature
L
J
Figure 6. Forward Power Dissipation 1N5820−22
R
qS
R
qL
R
qJ
= Thermal Resistance, Heatsink to Ambient
= Thermal Resistance, Lead−to−Heatsink
= Thermal Resistance, Junction−to−Case
P = Total Power Dissipation = P + P
D
F
R
P = Forward Power Dissipation
F
P = Reverse Power Dissipation
R
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R
R
= 42°C/W/in typically and 48°C/W/in maximum
= 10°C/W typically and 16°C/W maximum
qL
qJ
The maximum lead temperature may be found as follows:
T = T * n T
L
J(max)
JL
where n T [ R · P
D
JL
qJL
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
2−1/2, x 2−1/2,
copper surface.
NOTE 5 — MOUNTING DATA
L
L
Data shown for thermal resistance junction−to−ambient (R
)
q
JA
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
L = 1/2″
TYPICAL VALUES FOR R
IN STILL AIR
q
JA
Mounting Method 2
Lead Length, L (in)
Mounting
Method
BOARD GROUND
PLANE
L
L
1/8
1/4
1/2
3/4
R
q
JA
1
2
3
50
58
51
59
53
61
55
63
°C/W
°C/W
°C/W
VECTOR PUSH−IN
TERMINALS T−28
28
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5
1N5820, 1N5821, 1N5822
50
100
70
30
20
50
T = 75°C
L
f = 60 Hz
T = 100°C
J
30
10
20
1 CYCLE
SURGE APPLIED AT RATED LOAD CONDITIONS
7.0
5.0
10
25°C
3.0
2.0
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
NUMBER OF CYCLES
Figure 8. Maximum Non−Repetitive Surge
Current
1.0
100
50
0.7
0.5
T = 125°C
J
20
10
100°C
0.3
0.2
5.0
2.0
1.0
0.5
75°C
0.1
0.2
0.1
0.07
0.05
25°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.05
1N5820
1N5821
1N5822
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
0.02
0.01
Figure 7. Typical Forward Voltage
0
4.0 8.0
12
16
20
24
28
32
36
40
V , REVERSE VOLTAGE (VOLTS)
R
500
Figure 9. Typical Reverse Current
1N5820
300
200
NOTE 6 — HIGH FREQUENCY OPERATION
1N5821
T = 25°C
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
J
f = 1.0 MHz
100
70
1N5822
20 30
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
V , REVERSE VOLTAGE (VOLTS)
R
Figure 10. Typical Capacitance
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6
1N5820, 1N5821, 1N5822
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
(DO−201AD)
ISSUE G
NOTES:
A
K
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
1
2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
7.30
4.80
1.20
25.40
MAX
9.50
5.30
1.30
−−−
A
B
D
K
0.287
0.189
0.047
1.000
0.374
0.209
0.051
−−−
B
K
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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7
1N5820, 1N5821, 1N5822
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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1N5820/D
相关型号：
1N5822-B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
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