AFGHL30T65RQDN [ONSEMI]
IGBT - 650 V 30 A - Short circuit rated FS4 - Automotive qualified;
| 型号： | AFGHL30T65RQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 30 A - Short circuit rated FS4 - Automotive qualified 双极性晶体管 |
| 文件： | 总9页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT for Automotive
Application
650 V, 30 A
30 A, 650 V,
CE(Sat) = 1.57 V (Typ.)
V
C
AFGHL30T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of
FS4 IGBTs offer the optimum performance for automotive
applications. This technology is Short circuit rated and offers high
figure of merit with low conduction and switching losses.
G
E
Features
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: V
= 1.57 V (Typ.) @ I = 30 A
C
• 100% of the Parts Tested for I (Note 2)
CE(Sat)
LM
TO−247−3L
CASE 340CX
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
MARKING DIAGRAM
Typical Applications
• E−compressor for HEV/EV, PTC heater for HEV/EV
AYWWZZ
AFGHL30
T65RQDN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−to−Emitter Voltage
V
V
650
V
V
CES
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
GES
Collector Current (Note 1)
I
C
A
@ T = 25°C
42
30
C
A
= Assembly Site
@ T = 100°C
C
WW
Y
= Work Week Number
= Year of Production,
Last Number
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
I
120
120
A
A
A
LM
I
CM
ZZ
= Assembly Lot Number
I
F
@ T = 25°C
42
30
AFGHL30T65RQDN= Specific Device Code
C
@ T = 100°C
C
Pulsed Diode Maximum Forward Current
I
I
120
A
A
FM
Non−Repetitive Forward Surge Current
FM
ORDERING INFORMATION
(Half−Sine Pulse, tp = 8.3 ms, T = 25°C)
140
100
C
(Half−Sine Pulse, tp = 8.3 ms, T = 150°C)
C
Device
Package
Shipping
Short Circuit Withstand Time
t
ms
SC
V
= 15 V, V = 400 V, T = 150°C
5
AFGHL30T65RQDN
GE
CC
C
TO−247−3L 30 Units / Rail
(Pb−Free)
Maximum Power Dissipation
P
W
D
@ T = 25°C
230.8
115.4
C
@ T = 100°C
C
Operating Junction/Storage Temperature Range
T , T
−55 to
°C
°C
J
STG
+175
Maximum Lead Temp. for Soldering Purposes,
1/8″ from case for 5 seconds
T
L
265
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limited by bond wire.
2. V = 600 V, V = 15 V, I = 90 A, R = 75 W, Inductive Load, 100% Tested.
CC
GE
C
G
3. Repetitive Rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
November, 2021 − Rev. 1
AFGHL30T65RQDN/D
AFGHL30T65RQDN
THERMAL CHARACTERISTICS
Rating
Symbol
Min
Typ
0.50
0.92
−
Max
0.65
1.19
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
−
−
−
°C/W
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
V
GE
C
Temperature Coefficient of
Breakdown Voltage
= 0 V, I = 1 mA
−
0.58
V/°C
GE
C
DBV
CES
DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
= 0 V, V = V
I
−
−
−
−
30
mA
GE
CE
CES
CES
Gate Leakage Current,
Collector−emitter Short−circuited
V
GE
= V
, V = 0 V
CE
I
400
nA
GES
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 30 mA
V
GE(th)
4.30
5.30
6.30
V
V
GE
CE
C
V
GE
= 15 V, I = 30 A, T = 25°C
= 15 V, I = 30 A, T = 175°C
V
CE(sat)
−
−
1.57
1.88
1.82
−
GE
C
J
V
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
−
1570
56
7
−
−
−
−
−
−
−
pF
CE
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Resistance
C
res
f = 1 MHz
R
15
37
11
W
g
Gate Charge Total
V
CC
= 400 V, I = 30 A, V = 15 V
Q
nC
C
GE
g
Gate−Emitter Charge
Gate−Collector Charge
Q
ge
gc
Q
10
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C, V = 400 V,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
= 15 A, R = 2.5 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
t
68
d(off)
t
f
104
0.34
0.32
0.65
19
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 25°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 30 A, R = 2.5 W,
t
r
29
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
61
d(off)
t
f
78
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
0.79
0.54
1.30
mJ
E
ts
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2
AFGHL30T65RQDN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175°C, V = 400 V,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
17
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
d(on)
= 15 A, R = 2.5 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
83
d(off)
t
f
196
0.53
0.69
1.22
21
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 175°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 30 A, R = 2.5 W,
t
r
37
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
72
d(off)
t
f
164
1.14
1.09
2.23
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
mJ
V
E
ts
I = 30 A, T = 25°C
V
F
−
−
1.7
2.10
F
J
I = 30 A, T = 175°C
1.74
−
F
J
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
I = 30 A, dl /dt = 1000 A/ms
E
rec
−
−
−
−
−
−
46
39
−
−
−
−
−
−
mJ
nS
nC
mJ
F
F
V
= 400 V, T = 25°C
R
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
345
205
85
rr
I = 30 A, dl /dt = 1000 A/ms
E
rec
F
F
V
R
= 400 V, T = 175°C
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
nS
nC
Q
1002
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGHL30T65RQDN
TYPICAL CHARACTERISTICS
120
80
120
20 V
20 V
15 V
15 V
T = 175°C
J
T = 25°C
J
12 V
10 V
= 8 V
80
12 V
10 V
40
0
40
0
V
GE
V
= 8 V
GE
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
80
40
0
120
80
T = 25°C
J
V
GE
= 15 V
Common Emitter
V
CE
= 20 V
T = 25°C
J
T = 175°C
J
T = 175°C
J
40
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
V
GE
, Gate−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Typical Transfer Characteristics
3.5
3
100000
10000
1000
100
10
Common Emitter
= 15 V
V
GE
C
iss
I
= 100 A
C
2.5
2
C
oss
I
I
= 50 A
= 25 A
C
C
C
rss
f = 1 MHz
= 0 V
T = 25°C
J
1.5
V
GE
1
0.1
1
−100
−50
0
50
100
150
200
0.1
1
10 30
T , Collector−Emitter Case Temperature (5C)
C
V
CE
, Collector−to−Emitter Voltage (V)
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Capacitance Characteristics
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4
AFGHL30T65RQDN
TYPICAL CHARACTERISTICS (Continued)
15
12
9
300
V
= 200 V
CC
T = 25°C
J
100
300 V
10 ms
400 V
100 ms
DC
10
1
6
3
0
10 ms
Notes:
1. T = 25°C
2. T = 175°C
1 ms
C
J
3. Single Pulse
0.1
1
10
100
1000
0
0
0
10
20
30
40
50
V
, Collector−Emitter Voltage (V)
CE
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
1000
100
10
200
100
V
= 400 V, V = 15 V
GE
CC
= 30 A
I
C
T = 25°C
J
t
r
T = 175°C
J
t
d(off)
t
d(on)
V
= 400 V, V = 15 V
GE
I = 30 A
T = 25°C
T = 175°C
CC
t
f
10
C
J
J
0
10
20
30
40
50
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 10. Turn−off Characteristics vs.
Figure 9. Turn−on Characteristics vs.
Gate Resistance
Gate Resistance
500
100
200
100
V
CC
= 400 V, V = 15 V
GE
I
= 30 A
C
t
r
T = 25°C
J
T = 175°C
J
t
f
t
d(on)
V
CC
= 400 V, V = 15 V
GE
R = 2.5 W
T = 25°C
T = 175°C
t
d(off)
g
J
J
10
10
20
40
60
80
0
20
40
60
80
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−on Characteristics vs.
Figure 12. Turn−off Characteristics vs.
Collector Current
Collector Current
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5
AFGHL30T65RQDN
TYPICAL CHARACTERISTICS (Continued)
100
10
V
= 400 V, V = 15 V
GE
= 30 A
V
= 400 V, V = 15 V, I = 30 A
CC
CC
GE
C
I
C
T = 25°C
J
T = 25°C
T = 175°C
J
J
E
on
T = 175°C
J
10
1
E
on
1
E
off
E
off
0.1
0.1
0
10
20
30
40
50
0
20
40
60
80
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
120
90
60
30
0
40
30
20
10
0
T = 25°C
T = 175°C
J
T = 25°C
J
T = 175°C
J
J
100
300
500
700
900
1100 1300 1500
0
1
2
3
4
V , Forward Voltage (V)
F
dI /dt, Diode Current Slope (A/ms)
F
Figure 16. Reverse Recovery Current
Figure 15. Forward Characteristics
2
1
0
200
150
100
50
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
0
100
100
300
500
700
900
1100 1300 1500
300
500
700
900 1100 1300 1500
dI /dt, Diode Current Slope (A/ms)
F
dI /dt, Diode Current Slope (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
AFGHL30T65RQDN
TYPICAL CHARACTERISTICS (Continued)
10
1
0.5
0.2
0.1
0.1
R
R
2
1
P
DM
t
0.05
0.02
0.01
Single Pulse
1
C = t / R
C = t / R
2 2 2
1
1
1
0.01
0.001
t
2
i:
ri[K/W]: 0.1438
t[s]: 1.75E−04
1
2
3
Duty Factor, D = t / t
0.1883
1.38E−03 8.61E−03
0.158
1
× Z
2
Peak T = P
+ T
q
J
DM
JC C
−5
−4
−3
−2
−1
0
1
10
10
10
10
Rectangular Pulse Duration (s)
10
10
10
Figure 19. Transient Thermal Impedance of IGBT
10
1
0.5
P
DM
0.2
0.1
t
1
0.1
t
2
Duty Factor, D = t / t
0.05
1
2
Peak T = P
× Z
+ T
q
J
DM
JC C
0.02
0.01
Single Pulse
R
R
2
0.01
1
i:
ri[K/W]: 0.0720
t[s]: 1.82E−05
1
2
3
4
0.3081
4.22E−04 3.49E−03
0.321
0.2392
2.37E−02
C = t / R
C = t / R
2 2 2
1
1
1
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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