AFGHL50T65SQ [ONSEMI]
AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT, Stand alone IGBT without co-packed diode;
| 型号： | AFGHL50T65SQ |
| 厂家： | 
ONSEMI |
| 描述： | AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT, Stand alone IGBT without co-packed diode 双极性晶体管 |
| 文件： | 总8页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
50ꢀA, 650ꢀV
AFGHL50T65SQ
Using the novel field stop 4th generation high speed IGBT
technology. AFGHL50T65SQ which is AEC Q101 qualified offers the
optimum performance for both hard and soft switching topology in
automotive application. It is a stand−alone IGBT.
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Features
• AEC−Q101 Qualified
50 A, 650 V
• Maximum Junction Temperature: T = 175°C
J
VCESat = 1.6 V
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 50 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Fast Switching
• Tight Parameter Distribution
• RoHS Compliant
G
E
Typical Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
• Totem Pole Bridgeless PFC
• PTC
G
MAXIMUM RATINGS
C
E
Rating
Symbol Value
Unit
V
TO−247−3L
CASE 340CX
Collector−to−Emitter Voltage
V
CES
V
GES
650
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
MARKING DIAGRAM
Collector Current (Note 1)
@ T = 25°C
I
C
80
50
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
200
200
A
A
LM
I
CM
&Z&3&K
AFGHL
50T65SQ
Maximum Power Dissipation @ T = 25°C
P
268
134
W
C
C
D
@ T = 100°C
Operating Junction
T , T
−55 to
°C
°C
J
STG
/ Storage Temperature Range
+175
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
T
L
300
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
AFGHL50T65SQ = Specific Device Code
2. V = 400 V, V = 15 V, I = 200 A, R = 15 W, Inductive Load
CC
GE
C
G
3. Repetitive Rating: pulse width limited by max. Junction temperature
ORDERING INFORMATION
Device
Package
Shipping
AFGHL50T65SQ
TO−247−3L 30 Units / Rail
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020 − Rev. 1
AFGHL50T65SQ/D
AFGHL50T65SQ
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.56
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of
Breakdown Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter cut−off current,
gate−emitter short−circuited
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate leakage current, collector−
emitter short−circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 50 mA
V
GE(th)
3.4
4.9
6.4
V
V
GE
CE
C
V
= 15 V, I = 50 A
V
CE(sat)
−
−
1.6
1.95
2.1
−
GE
C
V
GE
= 15 V, I = 50 A, T = 175°C
C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
3209
42
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output capacitance
C
oes
f = 1 MHz
Reverse transfer capacitance
Gate charge total
C
12
res
V
= 400 V,
= 50 A,
Q
99
CE
g
I
C
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
17
ge
gc
V
= 15 V
GE
23
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
= 25°C,
= 400 V,
= 25 A,
= 4.7 W,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
19
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
CC
t
r
I
C
R
GE
G
Turn−off delay time
Fall time
t
87
d(off)
V
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
5
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
0.35
0.12
0.47
20
mJ
ns
on
off
E
E
ts
T
C
= 25°C,
= 400 V,
= 50 A,
= 4.7 W,
t
t
d(on)
V
CC
C
G
GE
t
r
28
I
R
V
Turn−off delay time
Fall time
81
d(off)
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
36
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
0.95
0.46
1.41
mJ
on
off
E
E
ts
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2
AFGHL50T65SQ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 175°C,
CC
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 25 A,
t
r
I
C
G
R
= 4.7 W,
Turn−off delay time
Fall time
99
d(off)
V
GE
= 15 V,
Inductive Load,
t
f
7
FWD: AFGHL50T65SQD
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.66
0.3
0.96
20
mJ
ns
E
ts
T = 175°C,
t
t
J
d(on)
V
= 400 V,
= 50 A,
CC
t
r
29
I
C
R
GE
= 4.7 W,
G
Turn−off delay time
Fall time
88
d(off)
V
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
46
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
1.42
0.65
2.07
mJ
E
ts
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
200
200
150
100
50
20V
15V
20V
15V
TC
TC
= 175°C
= 25°C
12V
10V
12V
10V
150
100
VGE = 8V
VGE = 8V
50
0
0
0
1
2
3
4
5
0
1
2
3
4
5
200
20
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
150
100
50
3.0
TC
= 25°C
TC
Common Emitter
V GE = 15V
= 175°C
Common Emitter
VGE = 15V
100 A
50 A
2.0
1.0
IC = 25 A
0
0
1
2
3
4
5
−100
−50
0
50
100
150
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Case Temperature, TC [ C]
°
Figure 3. Typical Saturation Voltage
Figure 4. Saturation Voltage vs. Case
Temperature
20
16
12
8
20
16
12
8
Common Emitter
Common Emitter
= 175°C
TC
TC
= 25°C
100A
100A
50A
50A
IC = 25A
4
4
0
IC = 25A
0
4
8
12
16
20
4
8
12
16
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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4
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
15
V CC = 200V
Common Emitter
T C = 25°C
10000
1000
100
300V
12
9
Cies
400V
Coes
6
Cres
10
1
3
0
Common Emitter
VGE = 0V, f = 1Mhz
T C
= 25°C
10
Collector−Emitter Voltage, VCE [V]
1
30
0
20
40
60
80
100
120
Gate Charge, Q g [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge
1000
100
tr
td(off)
100
10
tf
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
Common Emitter
VCC = 400V, V
= 15V,
GE
IC = 50A
TC
TC
= 25°C
= 175°C
TC
TC
= 25°C
= 175°C
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, Rg [ W ]
Gate Resistance, Rg [ W]
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
200
100
Common Emitter
V
CC = 400V, VGE = 15V,
RG = 4.7 W
tf
TC
TC
tr
= 25°C
= 175°C
100
td(off)
td(on)
10
Common Emitter
VCC = 400V, V GE = 15V,
RG = 4.7 W
TC
TC
= 25°C
= 175°C
1
10
0
25
50
75
100
125
150
10
35
60
85
110
135
Collector Current, IC [A]
Collector Current, IC [A]
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
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5
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
10
10
Eon
Eon
1
1
Eoff
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V,
IC = 50A
VCC = 400V, V GE = 15V,
Eoff
RG = 4.7 W
T C = 25°C
T C = 175°C
TC
TC
= 25°C
= 175°C
0.1
0.1
0
10
20
30
40
50
0
25
50
75
100
125
150
Gate Resistance, Rg [ W ]
Collector Current, IC [A]
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
300
DC
ms
10
100
ms
100
1ms
10
10ms
1
*Notes:
1. T C
2. T J
= 25°C
= 175°C
3. Single Pulse
0.1
1
10
100
1000
Collector − Emitter Voltage, VCE [V]
Figure 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
Notes:
Duty Factor, D = t /t
Peak T = P
0.05
P
DM
1
x Z
2
0.02
0.01
(t) + T
JC C
q
J
DM
t
1
t
2
Single Pulse
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 16. transient Thermal Impedance of IGBT
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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