BC847BLT3 [ONSEMI]
NPN 双极晶体管;
| 型号： | BC847BLT3 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 光电二极管 小信号双极晶体管 |
| 文件： | 总13页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
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• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
ESD Rating − Machine Model: >400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
3
BC846
65
45
30
BC847, BC850
BC848, BC849
1
2
Collector−Base Voltage
Vdc
Vdc
BC846
BC847, BC850
BC848, BC849
80
50
30
SOT−23
CASE 318
STYLE 6
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
6.0
6.0
5.0
MARKING DIAGRAM
Collector Current − Continuous
I
100
mAdc
C
XX M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G
1
XX = Device Code
THERMAL CHARACTERISTICS
M
= Date Code*
G
= Pb−Free Package
Characteristic
Symbol
Max
Unit
(Note: Microdot may be in either location)
Total Device Dissipation FR−5 Board,
P
225
mW
D
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note 1)
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
R
q
556
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Junction−to−Ambient (Note 1)
Total Device Dissipation
P
300
mW
D
Alumina Substrate (Note 2)
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
R
q
417
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 − Rev. 10
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A,B
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
(I = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
C
Collector−Emitter Breakdown Voltage BC846A,B
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
C
EB
Collector−Base Breakdown Voltage
BC846A,B
V
V
80
50
30
−
−
−
−
−
−
(I = 10 mA)
C
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Emitter−Base Breakdown Voltage
BC846A,B
6.0
6.0
5.0
−
−
−
−
−
−
(I = 1.0 mA)
E
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
−
−
−
90
150
270
−
−
−
−
(I = 10 mA, V = 5.0 V)
C
CE
(I = 2.0 mA, V = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
110
200
180
290
220
450
C
CE
BC847C, BC848C, BC849C, BC850C
420
520
800
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
BE(sat)
Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
obo
−
4.5
pF
dB
CB
Noise Figure (I = 0.2 mA,
NF
C
V
= 5.0 Vdc, R = 2.0 kW,
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
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2
BC846ALT1G Series
BC846A, BC847A, BC848A
300
200
0.18
150°C
I /I = 20
C
B
V
= 1 V
CE
150°C
−55°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25°C
25°C
−55°C
100
0
0.02
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
1.1
1.0
0.9
−55°C
V
= 5 V
CE
I /I = 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
BC846ALT1G Series
BC846A, BC847A, BC848A
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 7. Capacitances
Figure 8. Current−Gain − Bandwidth Product
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4
BC846ALT1G Series
BC846B
600
500
400
0.30
I /I = 20
V
= 1 V
C
B
150°C
CE
150°C
25°C
0.25
0.20
0.15
25°C
300
200
−55°C
0.10
0.05
0
−55°C
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
CE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
0.8
0.7
0.6
0.5
0.4
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
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5
BC846ALT1G Series
BC846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
q
for V
BE
VB
-55°C to 125°C
I =
10 mA
C
2.2
2.6
3.0
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 13. Collector Saturation Region
Figure 14. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
500
T = 25°C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
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6
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B
600
500
400
300
200
0.30
I /I = 20
V
= 1 V
C
B
CE
150°C
0.25
0.20
0.15
0.10
150°C
25°C
25°C
−55°C
−55°C
100
0
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
CE
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
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7
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 21. Collector Saturation Region
Figure 22. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 23. Capacitances
Figure 24. Current−Gain − Bandwidth Product
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8
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C
1000
900
0.30
150°C
I /I = 20
C
B
V
= 1 V
CE
0.25
0.20
0.15
0.10
800
150°C
700
600
500
400
300
200
25°C
25°C
−55°C
−55°C
0.05
0
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
CE
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
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9
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 29. Collector Saturation Region
Figure 30. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
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10
BC846ALT1G Series
1
1
100 mS 10 mS
1 S
100 mS 10 mS
1 S
1 mS
0.1
1 mS
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
1
100 mS 10 mS
1 mS
0.1
1 S
Thermal Limit
0.01
0.001
0.1
1
10
100
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
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11
BC846ALT1G Series
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC846ALT1G
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
(Pb−Free)
1A
BC846ALT3G
BC846BLT1G
BC846BLT3G
BC847ALT1G
BC847ALT3G
BC847BLT1G
BC847BLT3G
BC847CLT1G
BC847CLT3G
BC848ALT1G
BC848BLT1G
BC848BLT3G
BC848CLT1G
BC848CLT3G
BC849BLT1G
BC849BLT3G
BC849CLT1G
BC849CLT3G
BC850BLT1G
BC850CLT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
1B
1E
1F
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
1G
1J
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
1K
1L
2B
2C
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
2F
3,000 / Tape & Reel
SOT−23
(Pb−Free)
2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
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12
BC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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