BCP68T1G [ONSEMI]
NPN Silicon Epitaxial Transistor; NPN硅外延型晶体管
| 型号： | BCP68T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Silicon Epitaxial Transistor |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP68T1G, SBCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
http://onsemi.com
Features
High Current: I = 1.0 A
The SOT−223 Package Can Be Soldered Using Wave or Reflow
SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
C
The PNP Complement is BCP69T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2,4
BASE
1
MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
EMITTER 3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
20
Unit
Vdc
Vdc
Vdc
Adc
W
MARKING DIAGRAM
V
CEO
V
CBO
V
EBO
25
5.0
1.0
1.5
AYW
CA G
G
I
C
Total Power Dissipation @ T = 25C
(Note 1)
Derate above 25C
P
D
A
CA = Specific Device Code
12
mW/C
C
A
Y
W
G
= Assembly Location
= Year
= Work Week
Operating and Storage Temperature
Range
T , T
−65 to 150
J
stg
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
(Note: Microdot may be in either location)
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient (Surface Mounted)
R
83.3
C/W
q
JA
ORDERING INFORMATION
†
Lead Temperature for Soldering,
0.0625 in from case
T
260
10
C
L
Device
Package
Shipping
BCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
1,000/Tape & Reel
4,000/Tape & Reel
Time in Solder Bath
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
SBCP68T1G
BCP68T3G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 7
BCP68T1/D
BCP68T1G, SBCP68T1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristics
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 100 mAdc, I = 0)
Symbol
Min
Typ
Max
Unit
V
25
20
5.0
−
−
−
−
−
−
−
−
Vdc
Vdc
C
E
(BR)CES
(BR)CEO
(BR)EBO
Collector−Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0)
V
V
C
B
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector−Base Cutoff Current (V = 25 Vdc, I = 0)
I
CBO
10
10
mAdc
mAdc
CB
E
Emitter−Base Cutoff Current (V = 5.0 Vdc, I = 0)
I
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 5.0 mAdc, V = 10 Vdc)
50
85
60
−
−
−
−
375
−
C
CE
(I = 500 mAdc, V = 1.0 Vdc)
C
CE
CE
(I = 1.0 Adc, V = 1.0 Vdc)
C
Collector−Emitter Saturation Voltage (I = 1.0 Adc, I = 100 mAdc)
V
CE(sat)
−
−
−
−
0.5
1.0
Vdc
Vdc
C
B
Base−Emitter On Voltage (I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 10 mAdc, V = 5.0 Vdc)
f
T
−
60
−
MHz
C
CE
TYPICAL ELECTRICAL CHARACTERISTICS
300
200
300
200
T = 125C
J
= 25C
100
70
100
= -55C
V
= 10 V
CE
T = 25C
J
f = 30 MHz
50
30
V
CE
= 1.0 V
10
1.0
10
100
1000
10
100
200
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Current-Gain-Bandwidth Product
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2
BCP68T1G, SBCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
80
T = 25C
J
T = 25C
J
V
@ I /I = 10
C B
BE(sat)
70
60
50
40
30
V
BE(on)
@ V = 1.0 V
CE
V
@ I /I = 10
C B
CE(sat)
5.0
1.0
10
100
1000
0
1.0
2.0
3.0
4.0
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. “On” Voltage
Figure 4. Capacitance
25
20
15
10
5.0
-ꢁ0.8
-1.2
-1.6
-ꢁ2.0
-ꢁ2.4
-ꢁ2.8
T = 25C
J
R
for V
BE
q
VB
0
5.0
10
15
20
1.0
10
100
1000
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
0.8
0.6
T = 25C
J
= 1000 mA
I
= 10 mA
= 100 mA
= 50 mA
0.4
0.2
0
C
= 500 mA
0.01
0.1
1.0
I , BASE CURRENT (mA)
10
100
B
Figure 7. Saturation Region
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3
BCP68T1G, SBCP68T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
ꢂꢀ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
ꢂꢀ2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10
C
q
H
E
A
q
0.08 (0003)
STYLE 1:
A1
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L
L1
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BCP68T1/D
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