BSS123W [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管 100V，0.17A，6Ω;
| 型号： | BSS123W |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管 100V，0.17A，6Ω 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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December 2015
BSS123W
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
Description
• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
• High Density Cell Design for Low RDS(ON)
• Rugged and Reliable
This N-channel enhancement mode field effect transistor
is produced using high cell density, trench MOSFET
technology. This product minimizes on-state resistance
while providing rugged, reliable and fast switching perfor-
mance. This product is particularly suited for low-voltage,
low-current applications such as small servo motor con-
trol, power MOSFET gate drivers, logic level transistor,
high speed line drivers, power management/power sup-
ply and switching applications.
• Ultra Small Surface Mount Package
• Very Low Capacitance
• Fast Switching Speed
• Lead Free / RoHS Compliant
D
D
S
SOT-323
G
G
S
Ordering Information
Part Number
Marking
Package
Packing Method
BSS123W
SA
SOT-323 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Value
100
Unit
V
Drain-Source Voltage
VDGR
Drain-Gate Voltage RGS ≤ 20 kΩ
100
V
VGSS
Gate-Source Voltage
±20
V
Continuous
Pulsed
0.17
ID
Drain Current
A
0.68
TJ, TSTG Operating and Storage Temperature Range
-55 to +150
°C
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
200
Unit
mW
Total Power Dissipation
Derate Above 25°C
1.6
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient(1)
625
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA
100
V
VDS = 100 V, VGS = 0 V
Zero Gate Voltage Drain Current
1
μA
nA
nA
nA
IDSS
VDS = 20 V, VGS = 0 V
10
50
-50
IGSSF
IGSSR
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
On Characteristics(2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
0.8
80
1.7
2.0
6
V
VGS = 10 V, ID = 0.17 A
1.39
1.48
RDS(ON) Static Drain-Source On-Resistance
Ω
VGS = 4.5 V, ID = 0.17 A
10
gFS
Forward Transconductance
VDS = 10 V, ID = 0.17 A
mS
V
Drain-Source Diode Forward
Voltage
VSD
VGS = 0 V, IS = 0.34 A
0.81
1.30
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
71
6.6
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
2.74
Switching Characteristics(2)
tr
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay
1.24
5.73
2.94
8.4
8
16
8
ns
ns
ns
ns
tf
VDD = 30 V, ID = 0.28 A,
VGS = 10 V, RGEN = 6 Ω
td(on)
td(off)
Note:
Turn-Off Delay
13
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
1
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS = 10V
3.5V
6.0V
0.8
4.5V
3.0V
VGS = 2.5V
0.6
0.4
0.2
0
2.5V
3.0V
3.5V
4.5V
0.6
6.0V
10V
2.0V
0.9
0
0.2
0.4
0.8
1
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with Drain Current
and Gate Voltage
Figure 1. On-Region Characteristics
2.2
2
3.4
ID = 170mA
VGS = 10V
ID = 0.08A
3
1.8
1.6
1.4
1.2
1
TA = 125oC
2.6
2.2
1.8
0.8
0.6
0.4
1.4
TA = 25oC
1
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-
Source Voltage
Figure 3. On-Resistance Variation with Temperature
1
1
VGS = 0V
VDS = 10V
0.8
0.6
0.1
TA = 125oC
25oC
0.01
0.4
-55oC
TA = 125oC
25oC
0.001
0.2
-55oC
2.5
0
0.0001
1
1.5
2
3
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 5. Transfer Characteristics
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
f = 1 MHz
GS = 0 V
10
V
ID = 0.17A
VDS = 30V
50V
Ciss
100
10
1
8
6
4
2
0
70V
Coss
Crss
0
0.4
0.8
1.2
1.6
2
0.1
1
10
100
Qg, GATE CHARGE (nC)
VDS - DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance
Figure 7. Gate Charge Characteristics
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com
4
Physical Dimensions
Figure 9. 3-LEAD, SC70, EIAJ SC-70, 1.25MM WIDE
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com
5
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AccuPower¥
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QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
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Dual Cool™
EcoSPARK®
EfficientMax¥
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TRUECURRENT®*
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Saving our world, 1mW/W/kW at a time™
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MicroPak¥
SMART START¥
Solutions for Your Success¥
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®
UHC®
MicroPak2¥
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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