BTA25-800CW3G [ONSEMI]
Silicon Bidirectional Thyristors; 硅双向晶闸管
| 型号： | BTA25-800CW3G |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA25-600CW3G,
BTA25-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
TRIACS
25 AMPERES RMS
600 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS at 95°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
MT2
MT1
G
• Industry Standard TO-220AB Package − Internally Isolated
• High Commutating dI/dt − 4.0 A/ms minimum at 125°C
• Internally Isolated (2500 V
• These are Pb−Free Devices
MARKING
DIAGRAM
4
)
RMS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
BTA25−xCWG
DRM,
RRM
TO−220AB
CASE 221A
STYLE 12
(T = −40 to 125°C, Sine Wave,
V
J
AYWW
50 to 60 Hz, Gate Open)
1
2
BTA25−600CW3G
BTA25−800CW3G
600
800
3
x
A
Y
= 6 or 8
= Assembly Location
= Year
On-State RMS Current (Full Cycle Sine
I
25
A
A
T(RMS)
Wave, 60 Hz, T = 95°C)
C
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
250
TSM
WW = Work Week
= Pb−Free Package
G
T
= 25°C)
C
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
260
A sec
Non−Repetitive Surge Peak Off−State
V
V
/V
V
DSM/
RSM
DRM RRM
PIN ASSIGNMENT
Voltage (T = 25°C, t = 8.3 ms)
V
+100
J
1
Main Terminal 1
Peak Gate Current (T = 125°C, t ≤ 20 ms)
I
4.0
A
W
°C
°C
V
J
GM
2
3
4
Main Terminal 2
Gate
Average Gate Power (T = 125°C)
P
G(AV)
0.5
J
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
T
−40 to +125
−40 to +150
2500
J
No Connection
T
stg
V
iso
(t = 300 ms, R.H. ≤ 30%, T = 25°C)
A
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
Package
Shipping
BTA25−600CW3G TO−220AB
(Pb−Free)
50 Units / Rail
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
BTA25−800CW3G TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2009 − Rev. 0
BTA25−600CW3/D
BTA25−600CW3G, BTA25−800CW3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
R
R
1.8
60
°C/W
q
JC
q
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
,
mA
DRM
(V = Rated V
, V
; Gate Open)
T = 25°C
T = 125°C
J
I
−
−
−
−
0.005
3
D
DRM RRM
J
RRM
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 35 A Peak)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 W)
V
−
−
1.55
V
TM
=
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
35
35
35
Holding Current
(V = 12 V, Gate Open, Initiating Current = 100 mA)
D
I
−
−
50
mA
mA
H
Latching Current (V = 12 V, I = 42 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
75
75
75
Gate Trigger Voltage (V = 12 V, R = 30 W)
V
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
1.3
1.3
1.3
Gate Non−Trigger Voltage (T = 125°C)
V
GD
J
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.15
0.15
0.15
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(dI/dt)
4.0
−
−
−
−
−
50
−
A/ms
A/ms
V/ms
c
(Gate Open, T = 125°C, No Snubber)
J
Critical Rate of Rise of On−State Current
dI/dt
(T = 125°C, f = 120 Hz, I = 70 mA, tr ≤ 100 ns)
J
G
Critical Rate of Rise of Off-State Voltage
(V = 0.66 x V , Exponential Waveform, Gate Open, T = 125°C)
dV/dt
500
D
DRM
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTA25−600CW3G, BTA25−800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
DRM
off state
TM
I
H
I
at V
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
BTA25−600CW3G, BTA25−800CW3G
125
120
115
110
105
100
30
25
20
15
10
95
90
5
0
85
80
0
5
10
15
20
25
0
5
10
15
20
25
I , RMS ON-STATE CURRENT (A)
T(RMS)
I , ON-STATE CURRENT (A)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
1000
100
10
1
0.1
0.01
4
0.1
1
10
100
t, TIME (ms)
1000
1ꢀ·ꢀ10
Figure 4. Thermal Response
35
30
25
20
15
T = 125°C
J
T = 25°C
J
1
MT2 NEGATIVE
MT2 POSITIVE
10
5
0
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
−40 −25 −10
5
20 35 50 65 80 95 110 125
V , INSTANTANEOUS ON-STATE VOLTAGE (V)
T
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-State Typical Characteristics
Figure 5. Holding Current Variation
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4
BTA25−600CW3G, BTA25−800CW3G
25
20
15
10
1.3
V
= 12 V
D
V
= 12 V
1.1
0.9
0.7
0.5
D
R = 30 W
I
Q1
Q3
R = 30 W
I
Q3
Q1
Q2
Q2
5
0
0.3
0.1
−40 −25 −10
5
20 35 50 65 80 95 110 125
−40 −25 −10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
80
70
60
50
40
5000
4K
3K
2K
1K
0
V = 800 Vpk
D
V
= 12 V
D
T = 125°C
J
R = 30 W
I
Q2
Q1
Q3
30
20
−40 −25 −10
5
20 35 50 65 80 95 110 125
10
100
1000
10000
T , JUNCTION TEMPERATURE (°C)
J
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
Figure 9. Latching Current Variation
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
-
+
TRIGGER
200 V
CHARGE
MT2
G
1N914
51 W
MT1
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTA25−600CW3G, BTA25−800CW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
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BTA25−600CW3/D
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