BU407 [ONSEMI]
NPN SILICON POWER TRANSISTORS; NPN硅功率晶体管型号: | BU407 |
厂家: | ONSEMI |
描述: | NPN SILICON POWER TRANSISTORS |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BU406/D
SEMICONDUCTOR TECHNICAL DATA
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV’s and CRT’s.
7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
•
•
•
•
High Voltage: V
= 330 or 400 V
Fast Switching Speed: t = 750 ns (max)
CEV
f
Low Saturation Voltage: V = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO–220AB
CE(sat)
150 and 200 VOLTS
MAXIMUM RATINGS
Rating
Symbol
BU406
200
BU407
150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter Base Voltage
V
CEO
V
400
330
CEV
CBO
EBO
V
V
400
330
6
Collector Current — Continuous
Peak Repetitive
Peak (10 ms)
I
C
7
10
15
Base Current
I
B
4
Adc
Total Device Dissipation, T = 25 C
Derate above T = 25 C
C
P
D
60
0.48
Watts
W/ C
C
Operating and Storage
Junction Temperature Range
T , T
J stg
–65 to 150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.08
70
Unit
C/W
C/W
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
CASE 221A–06
TO–220AB
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
BU406
BU407
V
200
150
—
—
—
—
Vdc
CEO(sus)
C
B
Collector Cutoff Current
I
mAdc
CES
(V
CE
(V
CE
(V
CE
= Rated V
= Rated V
= Rated V
, V
= 0)
+ 50 Vdc, V
+ 50 Vdc, V
—
—
—
—
—
—
5
0.1
1
CEV BE
= 0)
CEO
CEO
BE
BE
= 0, T = 150 C)
C
Emitter Cutoff Current
(V = 6 Vdc, I = 0)
BU406, BU407
I
—
—
1
mAdc
EBO
EB
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)
C
V
—
—
—
—
—
—
1
1.2
2
Vdc
Vdc
C
B
CE(sat)
V
BE(sat)
Base–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)
C
B
Forward Diode Voltage (I
EC
= 5 Adc) “D” only
V
Volts
EC
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
1%.
(continued)
REV 2
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise noted)
C
Characteristic
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
Symbol
Min
Typ
Max
Unit
f
T
10
—
—
—
—
MHz
pF
(I = 0.5 Adc, V
= 10 Vdc, f
CE test
= 20 MHz)
C
Output Capacitance
(V = 10 Vdc, I = 0, f = 1 MHz)
C
80
ob
CB
E
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
t
c
—
—
0.75
µs
(V
CC
= 40 Vdc, I = 5 Adc,
C
I
= I = 0.5 Adc, L = 150 µH)
B1 B2
100
70
10
T
= 100°C
J
dc
25°C
50
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1
V
= 5 V
30
20
CE
0.1
BU407
BU406
T
5
= 25
°C
C
10
0.1
0.2 0.3 0.5
0.7
1
2
3
5
7
10
2
3
7
10
20
30
50 70 100
200
I
, COLLECTOR CURRENT (AMPS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 1. DC Current Gain
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
3
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BU406/D
◊
相关型号:
BU407-B-TA3-T
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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