BUV22G [ONSEMI]
SWITCHMODE Series NPN Silicon Power Transistor; SWITCHMODE系列NPN硅功率晶体管
| 型号： | BUV22G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Series NPN Silicon Power Transistor |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUV22
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
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Features
40 AMPERES
• High DC Current Gain:
NPN SILICON POWER
METAL TRANSISTOR
250 VOLTS − 250 WATTS
h
FE
min = 20 at I = 10 A
C
• Low V
, V
CE(sat)
CE(sat)
max = 1.0 V at I = 10 A
C
• Very Fast Switching Times:
TF max = 0.35 ms at I = 20 A
C
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
250
300
7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO(SUS)
V
CBO
V
EBO
TO−204AE (TO−3)
CASE 197A
Collector−Emitter Voltage (V = −1.5 V)
V
CEX
V
CER
300
290
BE
Collector−Emitter Voltage (R = 100 W)
BE
Collector−Current − Continuous
I
40
50
Adc
Apk
C
− Peak (PW v 10 ms)
I
CM
MARKING DIAGRAM
Base−Current Continuous
I
8
Adc
W
B
Total Device Dissipation @ T = 25_C
Operating and Storage Junction
Temperature Range
P
250
C
D
T , T
−65 to 200
_C
J
stg
BUV22G
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q
0.7
_C/W
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BUV22 = Device Code
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
WW
MEX
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
BUV22
Package
Shipping
TO−204
100 Units / Tray
100 Units / Tray
BUV22G
TO−204
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 10
BUV22/D
BUV22
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Sustaining Voltage
V
250
Vdc
CEO(sus)
(I = 200 mA, I = 0, L = 25 mH)
C
B
Collector Cutoff Current at Reverse Bias
(V = 300 V, V = −1.5 V)
I
mAdc
CEX
CE
BE
3.0
(V = 300 V, V = −1.5 V, T = 125_C)
CE
BE
C
12.0
Collector−Emitter Cutoff Current
(V = 200 V)
CE
I
3.0
mAdc
V
CEO
Emitter−Base Reverse Voltage
V
7
EBO
(I = 50 mA)
E
Emitter−Cutoff Current
I
1.0
mAdc
EBO
(V = 5 V)
EB
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(V = 20 V, t = 1 s)
(V = 140 V, t = 1 s)
CE
I
Adc
S/b
CE
12
0.15
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
(I = 10 A, V = 4 V)
C
CE
20
10
60
(I = 20 A, V = 4 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 A, I = 1 A)
V
V
Vdc
Vdc
CE(sat)
C
B
1.0
1.5
(I = 20 A, I = 2.5 A)
C
B
Base−Emitter Saturation Voltage
(I = 40 A, I = 4 A)
1.5
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
T
8.0
MHz
(V = 15 V, I = 2 A, f = 4 MHz)
CE
C
SWITCHING CHARACTERISTICS (Resistive Load)
Turn−on Time
t
0.8
2.0
ms
on
(I = 20 A, I = I = 2.5 A,
C
B1
B2
Storage Time
Fall Time
t
s
V
CC
= 100 V, R = 5 W)
C
t
f
0.35
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
200
T , TEMPERATURE (°C)
C
Figure 1. Power Derating
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2
BUV22
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
40
10
C
CE
1
The data of Figure 2 is based on T = 25_C; T
is
C
J(pk)
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
0.1
1
10
100
250
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
1.6
1.2
0.8
0.4
50
45
I /I = 8
C B
40
35
30
25
20
15
10
5
V
CE
= 5 V
V
BE
V
CE
0
0
1
10
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. “On” Voltages
Figure 4. DC Current Gain
V
CC
3.0
2.0
4
10 mF
R
C
1.0
t
S
I
B2
V
= 100 V
= 5 W
CC
0.4
0.3
R
B
I
B1
R
C
t
on
R
= 2.7 W
B
0.2
I
= I
B2
B1
I /I = 8
t
F
C B
R
− R : Non inductive resistances
B
C
4
8
12
16
20
24
I , COLLECTOR CURRENT (A)
C
Figure 6. Switching Times Test Circuit
Figure 5. Resistive Switching Performance
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3
BUV22
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
NOTES:
A
N
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
SEATING
PLANE
−T−
INCHES
DIM MIN MAX
1.530 REF
MILLIMETERS
MIN MAX
38.86 REF
E
A
B
C
D
E
G
H
K
L
K
D 2 PL
0.990 1.050 25.15 26.67
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
6.35
1.45
1.53
8.51
1.60
1.77
M
M
M
Y
0.30 (0.012)
T
Q
10.92 BSC
5.46 BSC
0.215 BSC
0.440 0.480 11.18 12.19
0.665 BSC 16.89 BSC
0.760 0.830 19.31 21.08
U
−Y−
L
V
H
N
Q
U
V
0.151 0.165
1.187 BSC
0.131 0.188
3.84
30.15 BSC
3.33 4.77
4.19
2
1
B
G
−Q−
0.25 (0.010)
M
M
Y
T
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BUV22/D
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