CPH5902H-TL-E [ONSEMI]
N 沟道 JFET 和 NPN 双极晶体管，15V，10 至 32mA，50V，150mA，复合型 CPH5;
| 型号： | CPH5902H-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET 和 NPN 双极晶体管，15V，10 至 32mA，50V，150mA，复合型 CPH5 晶体管 |
| 文件： | 总8页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6962C
CPH5902
N-Channel JFET and NPN Bipolar Transistor
15V, 10 to 32mA, 50V, 150mA, Composite type CPH5
http://onsemi.com
Features
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly
•
•
The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package
Drain and emitter are shared
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
V
15
--15
10
V
V
DSX
V
GDS
I
G
mA
mA
mW
Drain Current
I
D
50
Allowable Power Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
D
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
55
50
V
V
CBO
V
CEO
V
EBO
6
V
I
C
150
300
30
mA
mA
mA
mW
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
C
Total Power Dissipation
Junction Temperature
Storage Temperature
P
Mounted on a ceramic board (600mm2 0.8mm)
500
150
mW
×
T
Tj
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH5
7017A-007
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
CPH5902G-TL-E
CPH5902H-TL-E
0.15
0.05
2.9
Packing Type : TL
Marking
5
4
3
2
TL
1
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
0.95
0.4
Electrical Connection
5
4
3
CPH5
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
60612 TKIM/62005AC MSIM TB-00001588/22004 TSIM TA-101143/52501 TSIM TA-3247 No.6962-1/8
CPH5902
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
V
I
=--10 A, V =0V
--15
V
nA
V
μ
(BR)GDS
G
GS
I
V
=--10V, V =0V
--1.0
GSS
(off)
GS
DS
=5V, I =100
V
V
A
μ
--0.4
10.0*
24
--0.7
--1.5
GS
DS
D
Drain Current
I
V
=5V, V =0V
DS GS
32.0*
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
V
=5V, V =0V, f=1kHz
GS
38
10.0
2.9
|
|
DS
Ciss
Crss
NF
V
=5V, V =0V, f=1kHz
GS
DS
V
=5V, V =0V, f=1kHzz
GS
DS
V
=5V, Rg=1k , I =1mA, f=1kHz
1.0
Ω
DS
D
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=35V, I =0A
0.1
0.1
A
A
μ
CBO
CB
V =4V, I =0A
EB
E
I
μ
EBO
C
h
V
CE
=6V, I =1mA
135
400
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=6V, I =10mA
200
1.7
MHz
pF
mV
V
T
CE C
Cob
V
CB
=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=50mA, I =5mA
0.08
0.8
0.4
CE
B
V
I
C
=50mA, I =5mA
1.0
BE
B
V
I
C
=10 A, I =0A
55
50
6
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
0.15
0.75
0.20
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
: The CPH5902 is classified by I
as follows : (unit : mA)
*
DSS
Rank
G
H
I
10.0 to 20.0
16.0 to 32.0
DSS
The specifications shown above are for each individual FET or transistor.
Switching Time Test Circuit
I
B1
PC=20μs
D.C.≤1%
OUTPUT
I
B2
1kΩ
INPUT
R
2kΩ
L
V
R
50Ω
+
+
220μF
470μF
V
= --5V
V
=20V
CC
BE
10I = --10I =I =10mA
B1 B2
C
Ordering Information
Device
CPH5902G-TL-E
CPH5902H-TL-E
Package
CPH5
Shipping
memo
3,000pcs./reel
3,000pcs./reel
Pb Free
CPH5
No.6962-2/8
CPH5902
I
-- V
I
D
-- V
DS
[FET]
[FET]
D
DS
20
20
16
12
8
16
12
8
4
0
4
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Drain-to-Source Voltage, V
-- V ITR10364
[FET]
Drain-to-Source Voltage, V
DS
-- V ITR10365
[FET]
DS
I
D
-- V
I
D
-- V
GS
GS
22
20
18
16
14
12
10
8
16
14
12
V
=5V
V
=5V
DS
DS
I
=15mA
DSS
10
8
6
6
4
2
0
4
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
Gate-to-Source Voltage, V
-- V
IT03287
Gate-to-Source Voltage, V
GS
-- V
ITR10367
GS
| yfs | -- I
[FET]
| yfs | -- I
[FET]
D
DSS
7
100
V
V
=5V
DS
V
=5V
DS
5
=0V
GS
f=1kHz
7
5
f=1kHz
3
2
3
2
10
7
5
3
2
10
3
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
10
Drain Current, I -- mA
IT03288
[FET]
Drain Current, I
-- mA
IT03289
D
DSS
V
(off) -- I
Ciss -- V
DS
[FET]
=0V
GS
DSS
2
3
2
V
=5V
V
DS
I =100μA
GS
f=1MHz
D
--1.0
10
7
5
7
5
3
2
3
2
--0.1
1.0
7
7
2
3
5
2
3
5
7
2
3
10
1.0
10
Drain Current, I
DSS
-- mA
Drain-to-Source Voltage, V -- V
DS
IT03290
ITR10371
No.6962-3/8
CPH5902
Crss -- V
[FET]
=0V
f=1MHz
NF -- f
[FET]
=5V
I =1mA
DS
10
10
8
V
V
GS
DS
7
D
Rg=1kΩ
5
6
3
2
4
1.0
2
0
7
5
7
2
3
5
7
2
3
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
1.0
10
0.01
0.1
1.0
10
Drain-to-Source Voltage, V
-- V ITR10372
[FET]
Frequency, f -- kHz
ITR10373
DS
NF -- Rg
P
-- Ta
[FET]
D
10
8
400
350
300
250
200
150
100
V
=5V
DS
I =1mA
D
f=1kHz
6
4
2
0
50
0
2
3
5 7
2
3
5 7
2
3
5 7
100
2
3
5 7
1000
0
20
40
60
80
100
120
140
160
0.1
1.0
10
Ambient Temperature, Ta -- °C
Signal Source Resistance, Rg -- kΩ ITR10374
IT09864
I
C
-- V
[TR]
I -- V
C CE
[TR]
CE
50
12
10
8
40
30
20
30μA
6
25μA
20μA
μA
100
4
15μA
10μA
5μA
50μA
10
0
2
0
I =0μA
I =0μA
B
B
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
Collector-to-Emitter Voltage, V
-- V
V
Collector-to-Emitter Voltage, V
-- V ITR10376
[TR]
ITR10377
CE
CE
I
C
-- V
BE
h
-- I
C
[TR]
FE
2
160
140
120
100
80
V
=6V
=6V
CE
CE
1000
7
5
Ta=75°C
3
2
25°C
60
40
--25°C
100
7
20
0
5
3
2
3
5
2
3
5
2
3
5
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
Collector Current, I -- mA
ITR10379
Base-to-Emitter Voltage, V
BE
-- V ITR10378
C
No.6962-4/8
CPH5902
f
-- I
[TR]
=6V
c
-- V
[TR]
T
C
ib
EB
7
5
5
V
f=1MHz
CE
3
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
1.0
10
100
1.0
10
ITR10380
Emitter-to-Base Voltage, V
-- V ITR10381
[TR]
Collector Current, I -- mA
C
EB
Cob -- V
CB
[TR]
V
(sat) -- I
CE C
3
2
5
f=1MHz
I
/ I =10
B
C
3
2
1.0
7
5
10
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
ITR10382
ITR10383
CB
C
V
(sat) -- I
[TR]
P -- Ta
C
[TR]
BE
C
400
10
I
/ I =10
B
C
7
5
350
300
250
200
150
100
3
2
1.0
7
5
50
0
3
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
ITR10384
Ambient Temperature, Ta -- °C
IT09865
Collector Current, I -- mA
C
No.6962-5/8
CPH5902
Embossed Taping Specification
CPH5902G-TL-E, CPH5902H-TL-E
No.6962-6/8
CPH5902
Outline Drawing
Land Pattern Example
CPH5902G-TL-E, CPH5902H-TL-E
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.6
0.95
0.95
No.6962-7/8
CPH5902
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PS No.6962-8/8
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