CPH6405 [SANYO]

Ultrahigh-Speed Switching Applications; 超高速开关应用
CPH6405
型号: CPH6405
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

Ultrahigh-Speed Switching Applications
超高速开关应用

晶体 开关 晶体管 脉冲 光电二极管
文件: 总4页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENN7369  
N-Channel Silicon MOSFET  
CPH6405  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
Low ON-state resistance.  
Ultrahigh-speed switching.  
2151A  
2.5V drive.  
[CPH6405]  
0.15  
2.9  
5
6
1
4
0.05  
2
3
0.95  
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
0.4  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
SANYO : CPH6  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
±10  
V
I
6
24  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
A
DP  
P
Mounted on a ceramic board (900mm20.8mm)  
1.6  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0  
GS  
1
DSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0  
DS  
±10  
GSS  
V (off)  
GS  
=10V, I =1mA  
0.4  
6.3  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =3A  
9
33  
43  
S
D
R
DS  
(on)1  
I
D
I
D
=3A, V =4V  
GS  
43  
61  
mΩ  
mΩ  
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=1A, V =2.5V  
GS  
Marking : KE  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
32603 TS IM TA-1932 No.7369-1/4  
CPH6405  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Ciss  
Coss  
Crss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
560  
120  
70  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
12  
t
r
135  
50  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
110  
24  
f
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=10V, V =10V, I =6A  
GS  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=10V, V =10V, I =6A  
GS  
1.5  
D
=10V, V =10V, I =6A  
GS  
3.2  
D
V
SD  
I =6A, V =0  
S GS  
1.2  
Switching Time Test Circuit  
V
V
=15V  
IN  
DD  
D
4V  
0V  
I
=3A  
D
V
IN  
R =5Ω  
L
V
OUT  
PW=10µs  
D.C.1%  
G
CPH6405  
P. G  
50Ω  
S
I
-- V  
I
-- V  
D
DS  
D
GS  
12  
10  
8
12  
10  
8
V
=10V  
DS  
6
6
1.5V  
4
4
2
0
2
0
V
=1.0V  
GS  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
IT05419  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
IT05420  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V  
-- V  
R
DS  
(on) -- V  
R
(on) -- TGcS  
DS  
GS  
60  
50  
40  
30  
70  
60  
50  
40  
30  
Tc=25°C  
3A  
I
=1A  
D
20  
10  
20  
10  
0
2
4
6
8
10  
IT05421  
--50  
--25  
0
25  
50  
75  
100  
125  
IT05422  
Gate-to-Source Voltage, V  
GS  
-- V  
Case Temperature, Tc -- °C  
No.7369-2/4  
CPH6405  
y
fs -- I  
I
-- V  
SD  
D
F
3
2
3
2
V =0  
GS  
V =10V  
DS  
10  
7
5
3
2
10  
1.0  
7
5
7
5
3
2
0.1  
7
5
3
2
3
2
0.01  
7
5
3
2
1.0  
0.001  
0.3  
2
3
5
7
2
3
5
7
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0.1  
1.0  
10  
IT05423  
IT05424  
Drain Current, I -- A  
Diode Forward Voltage, V  
SD  
-- V  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
DS  
D
5
2
f=1MHz  
V
V
=10V  
=4V  
DD  
GS  
3
2
1000  
7
5
100  
7
5
3
2
t
f
3
2
100  
t (on)  
d
7
5
10  
7
5
0.1  
3
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT05426  
1.0  
10  
IT05425  
Drain-to-Source Voltage, V  
-- V  
Drain Current, I -- A  
DS  
D
V
-- Qg  
A S O  
GS  
10  
8
5
I
=24A  
<10µs  
V
I =6A  
D
=10V  
DP  
DS  
3
2
10  
7
5
I =6A  
D
3
2
6
1.0  
7
5
Operation in this  
4
3
2
area is limited by R (on).  
DS  
0.1  
7
5
2
0
Ta=25°C  
3
2
Single pulse  
Mounted on a ceramic board(900mm20.8mm)  
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
5
10  
15  
20  
25  
IT05427  
0.1  
1.0  
10  
Drain-to-Source Voltage, V  
-- V  
IT05428  
Total Gate Charge, Qg -- nC  
DS  
P
-- Ta  
D
2.0  
1.6  
1.5  
1.0  
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
IT05429  
Ambient Temperature, Ta -- °C  
No.7369-3/4  
CPH6405  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of March, 2003. Specifications and information herein are subject  
to change without notice.  
PSNo.7369-4/4  

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