EC4304C [ONSEMI]

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,250MA I(D),LLCC;


型号：	EC4304C
厂家：	ONSEMI
描述：	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,250MA I(D),LLCC
文件：	总4页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENN8124

EC4304C

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

EC4304C

Features

• Low ON-resistance.

• High-speed switching.

• 2.5V drive.

• High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage(*1)

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--30

--10

DSS

GSS

--0.25

--1

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

Allowable Power Dissipation

Channel Temperature

Storage Temperature

0.15

150

°C

Tch

Tstg

--55 to +150

(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.

Electrical Characteristics at Ta=25°C

Ratings

Unit

Parameter

Symbol

Conditions

= --1mA, V =0

min

--30

typ

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

= --30V, V =0

--1

DSS

GSS

= --8V, V =0

(off)

= --10V, I = --100µA

--0.4

0.24

--1.4

Forward Transfer Admittance

yfs

= --10V, I = --120mA

0.4

1.5

2.0

4.0

(on)1

= --120mA, V = --4V

1.9

2.8

8.0

Ω

Static Drain-to-Source On-State Resistance

(on)2

(on)3

= --60mA, V = --2.5V

Ω

= --10mA, V = --1.5V

Ω

Input Capacitance

Ciss

= --10V, f=1MHz

Output Capacitance

Coss

Crss

Reverse Transfer Capacitance

4.5

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

21805PE TS IM TB-00000116

No.8124-1/4

EC4304C

Continued from preceding page.

Ratings

typ

Unit

Parameter

Symbol

t (on)

Conditions

min

max

Turn-ON Delay Time

Rise Time

See specified Test Circuit.

9.5

Turn-OFF Delay Time

Fall Time

t (off)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

= --10V, V = --4V, I = --250mA

0.8

0.3

0.2

--0.9

Qgs

Qgd

= --10V, V = --4V, I = --250mA

I = --250mA, V =0

--1.2

Package Dimensions

unit : mm

Type No. Indication

Electrical Connection

2197A

Polarity mark (Top)

Bottom View

0.8

0.5

Gate

Top View

Drain

0.2

0.05

0.2

Marking

Source

Top view

*Electrodes : on the bottom

Top view

Polarity mark (Top)

Drain

0.05

1 : Gate

2 : Source

3 : Drain

4 : Drain

Gate

Source

SANYO : ECSP1008-4

Switching Time Test Circuit

= --15V

--4V

= --120mA

R =125Ω

OUT

PW=10µs

D.C.≤1%

EC4304C

P.G

50Ω

-- V

D GS

--0.50

--0.45

--0.40

--0.35

--0.30

--0.25

--0.20

--0.15

--0.10

--0.30

--0.25

--0.20

--0.15

--0.10

V = --10V

--0.05

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

Gate-to-Source Voltage, V -- V

IT07654

--3.5

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

Drain-to-Source Voltage, V

-- V

IT07653

No.8124-2/4

EC4304C

(on) -- V

(on) -- Ta

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

Ta=25°C

I =120mA

60mA

0.5

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

--60 --40 --20

100 120 140

Gate-to-Source Voltage, V

-- V

Ambient Temperature, Ta -- °C

IT08162

IT07656

fs -- I

-- V

--1.0

1.0

V = --10V

V =0V

--0.1

0.1

--0.01

0.01

--0.001

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

--1.4

--0.01

--0.1

--1.0

IT07657

Drain Current, I -- A

Diode Forward Voltage, V -- V

IT07658

Ciss, Coss, Crss -- V

SW Time -- I

V = --15V

V = --4V

Ciss

t (on)

--5

--10

--15

--20

--25

--30

IT08163

--0.1

Drain-to-Source Voltage, V

-- V

Drain Current, I -- A

IT07659

-- Qg

R (on) -- I

DS D

--4.0

V = --4V

= --10V

I = --0.25A

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

Ta=

--25

1.0

--0.5

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

--0.01

--0.1

--1.0

IT08164

Total Gate Charge, Qg -- nC

IT07661

Drain Current, I -- A

No.8124-3/4

EC4304C

(on) -- I

= --2.5V

= --1.5V

Ta=75°C

75°

Ta=

°C

--25

°C

--25

25°C

25°

1.0

--0.01

--0.1

--1.0

--0.01

--0.1

--1.0

IT08166

Drain Current, I -- A

IT08165

-- Ta

0.20

0.15

0.10

0.05

100

120

140

160

Ambient Temperature, Ta -- °C

IT07665

Note on usage : Since the EC4304C is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of February, 2005. Specifications and information herein are subject

to change without notice.

PS No.8124-4/4

EC4304C [ONSEMI]

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